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1.
 探讨了脉冲激光诱导液-固界面反应法(PLIR: Pulsed-Iaser Induced Liquid-Solid Interface Reaction )制备金刚石纳米晶的物理化学机制,提出了金刚石纳米晶的成核机理,即由激光诱导石墨六方结构原子团过渡到石墨菱方结构、然后转变成立方金刚石晶核,以及由石墨六方结构直接转变成六方金刚石结构的相变模型,并讨论了基于液-固界面反应的纳米晶生长动力学,较好地从动力学上解释了合成金刚石纳米晶的物理化学机制。  相似文献   

2.
用双离子(40Ar+,C2H+6)辐照实验完成了从多壁碳纳米管向金刚石纳米晶颗粒的转变.对转变机理进行了初步探讨.这一探索有望能成为一种金刚石纳米晶合成的新途径.由此可知,多重荷能离子辐照用于其他材料纳米结构的制备也不是凭空设想. 关键词: 金刚石纳米晶 离子辐照 透射电子显微镜  相似文献   

3.
用双离子(40Ar+,C1H6+)辐照实验完成了从多壁碳纳米管向金刚石纳米晶颗粒的转变.对转变机理进行了初步探讨.这一探索有望能成为一种金刚石纳米晶合成的新途径.由此可知,多重荷能离子辐照用于其他材料纳米结构的制备也不是凭空设想.  相似文献   

4.
纳米金刚石膜具有高耐磨能力和低摩擦系数,在多个领域有广阔的应用前景。纳米金刚石膜可通过热丝化学气相沉积方法进行制备。其中,系统压力是关键的参数,适当的压力下可生长纳米金刚石膜,而改变压力则金刚石膜的表面形态将发生变化。实验通过不同压力下制备金刚石膜,采用扫描电镜进行形貌观察,并通过拉曼光谱确定纳米金刚石结构。实验表明,金刚石膜形态随压力变化而改变,一定压力下生长出纳米金刚石膜,降低压力则晶体颗粒变粗。分析其原因是与氢原子的运动密切相关。  相似文献   

5.
 在金刚石压砧上测量了ZnO纳米线R-p和C-p关系,并和原先测量的纳米晶及体相ZnO的结果进行了比较。研究结果表明,ZnO纳米线在5.0 GPa左右发生相转变。其间的电阻-压力曲线呈指数下降趋势,电容呈指数上升趋势;在相转变之后电阻迅速上升,电容急速下降(指数下降),这与一般的块状和纳米晶的相转变都有所不同,表现出了纳米线与非线状纳米晶的差别。  相似文献   

6.
纳米金刚石膜具有高耐磨能力和低摩擦系数,在多个领域有广阔的应用前景。纳米金刚石膜可通过热丝化学气相沉积方法进行制备。其中,系统压力是关键的参数,适当的压力下可生长纳米金刚石膜,而改变压力则金刚石膜的表面形态将发生变化。实验通过不同压力下制备金刚石膜,采用扫描电镜进行形貌观察,并通过拉曼光谱确定纳米金刚石结构。实验表明,金刚石膜形态随压力变化而改变,一定压力下生长出纳米金刚石膜,降低压力则晶体颗粒变粗。分析其原因是与氢原子的运动密切相关。  相似文献   

7.
爆炸法合成的纳米碳集聚体和纳米金刚石具有大量的结构缺陷和表面官能团. 电子顺磁共振(EPR)研究表明,它们均含有大量的自由基,而且纳米碳集聚体和纳米金刚石的EPR谱的形状、峰面积、g因子以及线宽ΔHpp等都存在着较大的差异. 此外,还探讨了制备方法、化学处理条件、粒径大小、表面改性及掺杂对纳米碳集聚体和纳米金刚石的自由基密度的影响.  相似文献   

8.
大面积均匀纳米金刚石薄膜制备研究   总被引:7,自引:0,他引:7  
报道了一种利用偏压恒流等离子辅助热丝化学气相沉积城硅基板上制备大面积均匀纳米金刚石薄膜的新工艺,在不同沉积条件下研究了纳米金刚石薄膜的成核和生长过程,并通过扫描电镜、拉曼光谱和表面粗糙度测试仪观察了纳米金刚石薄膜的结构特征。最后成功制备了直径100mm、平均晶粒尺寸10nm的光滑纳米金刚石薄膜。  相似文献   

9.
 在铁基触媒原材料中添加不同含量的六方氮化硼,采用粉末冶金方法制备片状触媒,在六面顶压机上合成出含硼金刚石单晶。用体视显微镜对金刚石单晶的结构、形貌进行观察,并用电子探针(EPMA)和波谱仪(WDS)分析了金刚石(111)晶面的硼含量,发现金刚石表面有硼元素存在,且其含量随着触媒中掺硼量的增加而变化。在测定了含硼金刚石单晶的静压强度的基础上,采用冲击韧性测定仪和差热分析仪对不同掺硼量触媒合成出的金刚石单晶在空气中的热稳定性进行了系统的对比研究。结果表明,触媒掺硼量对金刚石的机械强度和热稳定性有重要影响,随着掺硼量的变化,其机械强度和热稳定性均存在一个最佳值。  相似文献   

10.
纳米金刚石薄膜的沉积实验在自行研制的热丝化学气相沉积系统上完成。基体为金刚石微粉研磨和酸蚀后的硬质合金片,反应气体为CH4和H2混合气,V(CH4):V(H2)=1%-4%,基体温度800-1000℃,沉积时气压为0.8~2.0kPa。SEM观察表明,影响金刚石膜的表面形貌及粗糙度的关键参量是基体温度、反应气压及含炭气体的浓度,这些参数都会影响到薄膜的纯度、结晶习性和晶面完整性。沉积纳米金刚石薄膜工艺是通过高密度形核以及抑制金刚石膜在沉积过程中的晶粒长大来实现的。  相似文献   

11.
Titanium and aluminum nitride synthesis via layer by layer LA-CVD   总被引:1,自引:0,他引:1  
The possibility of the layer-by-layer synthesis of 3D parts from nitrides of titanium or aluminum by selective laser sintering/melting is discussed. The relationship between laser processing parameters and structure and phase content of sintered/melted samples are studied by means of optical metallography, X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. Optimal parameters of SLM process for AlN and TiN synthesis are determined. Solid 3D parts containing a TiN phase are produced from Ti powder. Distortion of the crystalline lattice of AlN and TiN phases is observed with the laser energy input.  相似文献   

12.
利用激光干涉结晶方法,采用周期为400 nm的一维(1D)移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布,在不同厚度的超薄氢化非晶硅(a-Si:H)膜内直接制备1D有序纳米硅(nc-Si)阵列.拉曼散射谱表明,样品上呈条状分布的受辐照区域发生晶化.原子力显微镜和透射电子显微镜测试结果表明:1D的nc-Si阵列的周期和移相光栅掩模一样.随着a-Si:H膜厚度从10nm降至4nm,通过控制激光的能量密度,每个周期中nc-Si条状分布区宽度可达到30nm.nc-Si条状分布区的高分辨电子显微镜照片显 关键词: 纳米硅 激光干涉结晶 移相光栅 定域晶化  相似文献   

13.
Ni ions were implanted in bulk AlN with the goal to form embedded metallic clusters. Combining several characterisation techniques such as X-ray absorption spectroscopy, X-ray diffraction and high resolution transmission electron microscopy, we determined the lattice parameter of the Ni clusters that display a fcc crystalline structure. The average size increases when the ion fluence is increased or after a thermal treatment. Thanks to moiré fringes observed by high resolution transmission electron microscopy and to satellite peaks seen on the diffraction patterns, we concluded that the annealed Ni clusters orientate their (002) planes on the (101) of AlN. Moreover, the satellite positions allowed us to calculate Ni cluster average diameters, that are in agreement with average sizes deduced by X-ray absorption spectroscopy. Received 25 August 1999 and Received in final form 8 February 2000  相似文献   

14.
We present a structural investigation of single-crystal diamond following ultrafast laser irradiation of the surface and the bulk material. Optical microscopy, atomic force microscopy, scanning electron microscopy, and focused-ion beam and transmission electron microscopy techniques were utilized to selectively examine the final state of the samples. Laser induced periodic surface structures (LIPSS) with high- and low-spatial frequencies were obtained with multiple-pulse surface irradiation under both stationary and translated target conditions. High magnification transmission electron microscopy analysis of cross sections of the LIPSS revealed modified layers of a few tens of nanometers in thickness capping the crystalline diamond matrix. Sub-surface irradiation of diamond at high laser fluences led to damaged regions and cracks in the bulk material. When translational bulk irradiation of the diamond was performed, substantially sub-wavelength periodic structures were observed at the unpolished side facet of the diamond plate where the laser focus was translated out of the bulk. Spatial periods were 140 nm and the structures largely consisted of single-crystal diamond with a 10 nm modified layer. Finally, preliminary studies of single-shot laser ablation craters at high laser fluences exhibited suppression of material removal for peak values above 45 J/cm2.  相似文献   

15.
We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H2O2-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphirewith a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H2O2-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. PACS 61.10.Nz; 68.37.Lp; 81.05.Dz; 81.15.Hi  相似文献   

16.
Thin layers of GaSb grown on GaAs by molecular beam epitaxy have been studied by Raman spectroscopy and transmission electron microscopy. In spite of the high value of the lattice mismatch (8%), these systems reveal a good crystalline quality: as a matter of fact, the lattice dynamics analysed through the resonant Raman scattering lead to a large correlation length for the optical modes. Moreover, they evidence the unstrained nature of the epilayers. The absence of the residual strain is connected to the highly regular network of Lomer dislocations observed by TEM. Obtaining such a perfect array of dislocations is a consequence of both the characteristic of the system (high lattice mismatch, same cationic sites) and the peculiar growth conditions (ideal surface preparation due to the buffer layer, adequate temperature allowing the direct relaxation of GaSb by island growth).  相似文献   

17.
Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the femtosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs.  相似文献   

18.
 对Al70Co15Ni10Tb5合金进行了静高压(7.0 GPa)熔态(1 700 ℃)淬火(冷却速率1020 C/s)处理,首次观察到一个新十次准晶相关晶体相。该相属底心正交晶体,晶胞参数为a=2.28 nm、b=1.60 nm、c=5.46 nm。通过高分辨像分析,给出了它的二维点阵模型。同时在样品中发现了尺寸均匀的纳米级非晶超微粒形成,超微粒为球形,直径30~40 nm。  相似文献   

19.
In the present study, solid-solution gold?Cplatinum (Au?CPt) nanoparticles with controllable compositions were fabricated by high-intensity femtosecond laser irradiation of an aqueous solution of gold and platinum ions without any chemicals and complicated processes. Transmittance electron microscopy revealed that the single nanometer-sized particles were fabricated by femtosecond laser irradiation of mixed aqueous solutions of gold and platinum ions. The crystalline structure of nanoparticles was characterized by electron and X-ray diffractions. Contrary to the bulk Au?CPt binary systems, which commonly contain a pair of diffraction peaks between pure gold and platinum peaks because of its large miscibility gap in phase diagram, or mixture of Au and Pt, the diffraction peaks of Au?CPt nanoparticles fabricated in the experiment showed a characteristic of the fcc-type lattice. Moreover, the diffraction patterns shifted monotonically from the peak position of pure gold to that of pure platinum as the fractions of platinum ions in the solution were increased. These observations strongly imply that the Au?CPt nanoparticles were solid solution with intended compositions. This technique is not only simple and environmentally friendly, but also applicable to other binary and ternary systems.  相似文献   

20.
We report on the use of high resolution electron microscopy and optical processing techniques to study defects in solid inert gas precipitates (bubbles) formed by ion implantation into aluminium. Faceted precipitates, of the order of 5 run in length and epitaxial with the aluminium, in some cases exhibit a high degree of crystalline perfection but in others departure from the regular atomic arrangement is evident in the lattice images. Optical processing techniques have been applied to enhance the lattice images and in some cases to colour encode the aluminium and inert gas spacings present in the micrograph, with the aim of indentifying specific defect structures in the inert gas solid. We demonstrate that the solid “bubble”, formed in a metal by ion implantation, provides a means of studying defects in a simple insulator, the rare gas solid.  相似文献   

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