Topological phase transition in anisotropic square-octagon lattice with spin–orbit coupling and exchange field

We investigate the topological phase transitions in an anisotropic square-octagon lattice in the presence of spin–orbit coupling and exchange field. On the basis of the Chern number and spin Chern number, we find a number of topologically distinct phases with tuning the exchange field, including time-reversal-symmetry-broken quantum spin Hall phases, quantum anomalous Hall phases and a topologically trivial phase. Particularly, we observe a coexistent state of both the quantum spin Hall effect and quantum anomalous Hall effect. Besides, by adjusting the exchange filed, we find the phase transition from time-reversal-symmetry-broken quantum spin Hall phase to spin-imbalanced and spin-polarized quantum anomalous Hall phases, providing an opportunity for quantum spin manipulation. The bulk band gap closes when topological phase transitions occur between different topological phases. Furthermore, the energy and spin spectra of the edge states corresponding to different topological phases are consistent with the topological characterization based on the Chern and spin Chern numbers.     

Rashba自旋轨道耦合下square-octagon晶格的拓扑相变

本文研究了各向同性square-octagon晶格在内禀自旋轨道耦合、Rashba自旋轨道耦合和交换场作用下的拓扑相变,同时引入陈数和自旋陈数对系统进行拓扑分类.系统在自旋轨道耦合和交换场的影响下会出现许多拓扑非平庸态,包括时间反演对称破缺的量子自旋霍尔态和量子反常霍尔态.特别的是,在时间反演对称破缺的量子自旋霍尔效应中,无能隙螺旋边缘态依然能够完好存在.调节交换场或者填充因子的大小会导致系统发生从时间反演对称破缺的量子自旋霍尔态到自旋过滤的量子反常霍尔态的拓扑相变.边缘态能谱和自旋谱的性质与陈数和自旋陈数的拓扑刻画完全一致.这些研究成果为自旋量子操控提供了一个有趣的途径.     

The family of topological Hall effects for electrons in skyrmion crystals

Hall effects of electrons can be produced by an external magnetic field, spin–orbit coupling or a topologically non-trivial spin texture. The topological Hall effect (THE) – caused by the latter – is commonly observed in magnetic skyrmion crystals. Here, we show analogies of the THE to the conventional Hall effect (HE), the anomalous Hall effect (AHE), and the spin Hall effect (SHE). In the limit of strong coupling between conduction electron spins and the local magnetic texture the THE can be described by means of a fictitious, “emergent” magnetic field. In this sense the THE can be mapped onto the HE caused by an external magnetic field. Due to complete alignment of electron spin and magnetic texture, the transverse charge conductivity is linked to a transverse spin conductivity. They are disconnected for weak coupling of electron spin and magnetic texture; the THE is then related to the AHE. The topological equivalent to the SHE can be found in antiferromagnetic skyrmion crystals. We substantiate our claims by calculations of the edge states for a finite sample. These states reveal in which situation the topological analogue to a quantized HE, quantized AHE, and quantized SHE can be found.     

Topological response theory of doped topological insulators

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show that there is an inhomogeneity-induced Berry phase contribution to the surface Hall conductivity that is completely determined by the occupied states and is independent of other details such as band dispersion and impurities. In the limit of zero bulk carrier density, this intrinsic surface Hall conductivity reduces to the half-integer quantized surface Hall conductivity of TI. Based on our theory we predict the behavior of the surface Hall conductivity for a doped topological insulator with a top gate, which can be directly compared with experiments.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

Emergent Z_2 topological invariant and robust helical edge states in two-dimensional topological metals

In this work, we study the effects of disorder on topological metals that support a pair of helical edge modes deeply embedded inside the gapless bulk states. Strikingly, we predict that a quantum spin Hall(QSH) phase can be obtained from such topological metals without opening a global band gap. To be specific, disorder can lead to a pair of robust helical edge states which is protected by an emergent Z_2 topological invariant, giving rise to a quantized conductance plateau in transport measurements. These results are instructive for solving puzzles in various transport experiments on QSH materials that are intrinsically metallic. This work also will inspire experimental realization of the QSH effect in disordered topological metals.     

Topological insulators in magnetic fields: quantum Hall effect and edge channels with a nonquantized θ term

We investigate how a magnetic field induces one-dimensional edge channels when the two-dimensional surface states of three-dimensional topological insulators become gapped. The Hall effect, measured by contacting those channels, remains quantized even in situations where the θ term in the bulk and the associated surface Hall conductivities, σ(xy)(S), are not quantized due to the breaking of time-reversal symmetry. The quantization arises as the θ term changes by ±2πn along a loop around n edge channels. Model calculations show how an interplay of orbital and Zeeman effects leads to quantum Hall transitions, where channels get redistributed along the edges of the crystal. The network of edges opens new possibilities to investigate the coupling of edge channels.     

Visualizing the in-Gap States in Domain Boundaries of Ultra-Thin Topological Insulator Films

Ultra-thin topological insulators provide a platform for realizing many exotic phenomena such as the quantum spin Hall effect, and quantum anomalous Hall effect. These effects or states are characterized by quantized transport behavior of edge states. Experimentally, although these states have been realized in various systems,the temperature for the edge states to be the dominating channel in transport is extremely low, contrary to the fact that the bulk gap is usually in the order of a few tens of milli-electron volts. There must be other in-gap conduction channels that do not freeze out until a much lower temperature. Here we grow ultra-thin topological insulator Bi_2Te_3 and Sb_2Te_3 films by molecular beam epitaxy and investigate the structures of domain boundaries in these films. By scanning tunneling microscopy and spectroscopy we find that the domain boundaries with large rotation angles have pronounced in-gap bound states, through which one-dimensional conduction channels are suggested to form, as visualized by spatially resolved spectroscopy. Our work indicates the critical role played by domain boundaries in degrading the transport properties.     

Appearance and disappearance of edge states in topological insulators

We investigate the relationship between spin Chern numbers and edge state properties in general situations, where the time-reversal symmetry may be broken. As an example, we consider a thin film of three-dimensional topological insulators sandwiched between two ferromagnetic insulators with an antiparallel magnetization configuration. A topological quantum spin Hall phase with quantized spin Chern numbers C _± =  ±1, and a trivial insulator with C _± = 0 are found in different parameter regions. With tuning parameters, the quantum phase transition between the two phases can occur through closing of the spin spectrum gap rather than energy gap. It is further shown that for a junction between samples with different parameters, appearance of edge states at the interface is always related to the mismatch of spin Chern numbers, independent of symmetries.     

Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator

The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.     

Spin-filtered edge states in graphene

Spin–orbit coupling changes graphene, in principle, into a two-dimensional topological insulator, also known as quantum spin Hall insulator. One of the expected consequences is the existence of spin-filtered edge states that carry dissipationless spin currents and undergo no backscattering in the presence of non-magnetic disorder, leading to quantization of conductance. Whereas, due to the small size of spin–orbit coupling in graphene, the experimental observation of these remarkable predictions is unlikely, the theoretical understanding of these spin-filtered states is shedding light on the electronic properties of edge states in other two-dimensional quantum spin Hall insulators. Here we review the effect of a variety of perturbations, like curvature, disorder, edge reconstruction, edge crystallographic orientation, and Coulomb interactions on the electronic properties of these spin filtered states.     

Charge and spin Hall conductivity in metallic graphene

Graphene has an unusual low-energy band structure with four chiral bands and half-quantized and quantized Hall effects that have recently attracted theoretical and experimental attention. We study the Fermi energy and disorder dependence of its spin Hall conductivity sigma(xy)(SH). In the metallic regime we find that vertex corrections enhance the intrinsic spin Hall conductivity and that skew scattering can lead to sigma(xy)(SH) values that exceed the quantized ones expected when the chemical potential is inside the spin-orbit induced energy gap. We predict that large spin Hall conductivities will be observable in graphene even when the spin-orbit gap does not survive disorder.     

The hall conductivity of a two-dimensional confined system

The Hall conductivity of a two-dimensional system of free, independent electrons is calculated using linear response theory. Emphasis is on the influence of the edge states introduced by a confining potential. It is shown that within the Kubo formalism the quantized values of the Hall conductivity may be described by bulk states as well as by edge states only. The influence of a random potential is discussed.     

The invisible Majorana bound state at the helical edge

The presence of a Majorana bound state in condensed matter systems is often associated to a zero bias peak in conductance measurements. Here, we analyze a system were this paradigm is violated. A Majorana bound state is always present at the interface between a quantum spin Hall system that is magnetically gapped and a quantum spin Hall system gapped by proximity induced s-wave superconductivity. However, the linear conductance could be either zero or non-zero and quantized depending on the energy and length scales of the barriers. The transition between the two values is reminiscent of the topological phase transition in proximitized spin–orbit coupled quantum wires in the presence of an applied magnetic field. We interpret the behavior of the conductance in terms of scattering states at both zero and non-zero energy.     

Photoexcitation in two-dimensional topological insulators

One of the most fascinating challenges in Physics is the realization of an electron-based counterpart of quantum optics, which requires the capability to generate and control single electron wave packets. The edge states of quantum spin Hall (QSH) systems, i.e., two-dimensional (2D) topological insulators realized in HgTe/CdTe and InAs/GaSb quantum wells, may turn the tide in the field, as they do not require the magnetic field that limits the implementations based on quantum Hall effect. However, the band structure of these topological states, described by a massless Dirac fermion Hamiltonian, prevents electron photoexcitation via the customary vertical electric dipole transitions of conventional optoelectronics. So far, proposals to overcome this problem are based on magnetic dipole transitions induced via Zeeman coupling by circularly polarised radiation, and are limited by the g-factor. Alternatively, optical transitions can be induced from the edge states to the bulk states, which are not topologically protected though.Here we show that an electric pulse, localized in space and/or time and applied at a QSH edge, can photoexcite electron wavepackets by intra-branch electrical transitions, without invoking the bulk states or the Zeeman coupling. Such wavepackets are spin-polarised and propagate in opposite directions, with a density profile that is independent of the initial equilibrium temperature and that does not exhibit dispersion, as a result of the linearity of the spectrum and of the chiral anomaly characterising massless Dirac electrons. We also investigate the photoexcited energy distribution and show how, under appropriate circumstances, minimal excitations (Levitons) are generated. Furthermore, we show that the presence of a Rashba spin–orbit coupling can be exploited to tailor the shape of photoexcited wavepackets. Possible experimental realizations are also discussed.     

Enhanced photonic spin Hall effect with subwavelength topological edge states

Photonic structures offer unique opportunities for controlling light‐matter interaction, including the photonic spin Hall effect associated with the transverse spin‐dependent displacement of a light beam that propagates in specially designed optical media. However, due to small spin‐orbit coupling, the photonic spin Hall effect is usually weak at the nanoscale. Here we suggest theoretically and demonstrate experimentally, in both optics and microwave experiments, the photonic spin Hall effect enhanced by topologically protected edge states in subwavelength arrays of resonant dielectric particles. Based on direct near‐field measurements, we observe the selective excitation of the topological edge states controlled by the handedness of the incident light. Additionally, we reveal the main requirements to the symmetry of photonic structures to achieve the topology‐enhanced spin Hall effect, and also analyse the robustness of the photonic edge states against the long‐range coupling.

     

Nondissipative spin Hall effect via quantized edge transport

The spin Hall effect in a two-dimensional electron system on honeycomb lattice with both intrinsic and Rashba spin-orbit couplings is studied numerically. Integer quantized spin Hall conductance is obtained at the zero Rashba coupling limit when electron Fermi energy lies in the energy gap created by the intrinsic spin-orbit coupling, in agreement with recent theoretical prediction. While nonzero Rashba coupling destroys electron spin conservation, the spin Hall conductance is found to remain near the quantized value, being insensitive to disorder scattering, until the energy gap collapses with increasing the Rashba coupling. We further show that the charge transport through counterpropagating spin-polarized edge channels is well quantized, which is associated with a topological invariant of the system.     

Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures

The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number C_s for energy-bands of trilayer graphene having the essence of intrinsic spin–orbit coupling is analytically calculated. We find that for each valley and spin, C_s is three times larger in trilayer graphene as compared to single layer graphene. Since the spin Chern-number corresponds to the number of edge states,consequently the trilayer graphene has edge states, three times more in comparison to single layer graphene. We also study the trilayer graphene in the presence of both electric-field and intrinsic spin–orbit coupling and investigate that the trilayer graphene goes through a phase transition from a quantum spin Hall state to a quantum valley Hall state when the strength of the electric field exceeds the intrinsic spin coupling strength. The robustness of the associated topological bulk-state of the trilayer graphene is evaluated by adding various perturbations such as Rashba spin–orbit(RSO) interaction αR, and exchange-magnetization M. In addition, we consider a theoretical model, where only one of the outer layers in trilayer graphene has the essence of intrinsic spin–orbit coupling, while the other two layers have zero intrinsic spin–orbit coupling.Although the first Chern number is non-zero for individual valleys of trilayer graphene in this model, however, we find that the system cannot be regarded as a topological insulator because the system as a whole is not gaped.