CCD在fs激光辐照下的损伤研究

 用脉宽为60 fs、波长为800 nm的 fs激光辐照电荷耦合器件，研究了电荷耦合器件在fs激光作用下的失效问题。实验得到fs激光作用下电荷耦合器件的失效阈值为4.22×10^－3 J/cm²。这比ns激光作用下电荷耦合器件的损伤阈值低2～3个量级。对该器件进行显微观测，在光敏元上没有发现损伤，但在器件的栅极上发现了明显的激光引起的损伤痕迹。     

毫秒脉冲激光致硅光电二极管电学损伤的有限元分析及实验研究

为了研究毫秒脉冲激光致硅基PIN光电二极管电学损伤,基于热传导及弹塑性力学理论,在光电二极管内部材料各向同性并且P-I-N三层结构之间满足温度连续和热流平衡条件下,建立毫秒脉冲激光辐照硅基PIN光电二极管二维轴对称模型,采用有限元方法模拟分析了1064 nm Nd:YAG毫秒量级脉冲激光辐照硅基PIN光电二极管的温度场与应力场分布,并实验测量了硅基PIN光电二极管实验前后的电学参数.结果表明,激光辐照硅基PIN光电二极管时,温升使材料表面熔融、烧蚀,并且在空间上存在温度梯度变化,即激光辐照产生的热与应力使光敏面及硅晶格晶键损伤,最终造成光电探测器的探测性能下降.研究结果可为毫秒脉冲激光辐照硅基PIN光电二极管电学损伤机理奠定基础.     

高重复频率飞秒激光对面阵CCD的干扰和破坏

 采用800 nm，100 fs的超短脉冲激光器对硅面阵CCD进行辐照实验，观测到饱和、串扰以及永久性损伤等多种可能造成成像器件失效的现象，特别是在激光能量较高时，发现CCD在成像时出现了黑白屏的现象。在飞秒激光器以1，10和1 000 Hz工作的条件下，分别测量了硅面阵CCD的饱和阈值、串扰阈值和破坏阈值。对破坏后的CCD器件进行了显微分析。在1 kHz工作的条件下进行了视场外干扰实验，观察到串扰和全屏饱和的现象。     

ns激光辐照硅光电探测器的损伤阈值

以He-Ne激光作为参考光,采用反射光能量法,测量了ns激光辐照硅光电探测器的损伤阈值,并测量了不同功率密度的强激光辐照下探测器对参考光的反射率.实验结果表明,ns激光辐照硅光电探测器的损伤阈值为4.1×106W/cm2,在探测器被强激光损伤的初期阶段,探测器对参考光的反射率下降很快,继续增加入射激光的能量,探测器对参考光的反射率下降趋于平缓.     

高温合金不同脉宽超快激光作用下多脉冲去除阈值

实验研究了激光脉冲宽度和脉冲个数对镍基高温合金材料去除阈值的影响,分别在290 fs,1 ps和7 ps脉宽的激光下,使用1,10,50,100,300,500和1000个不同能量的激光脉冲辐照高温合金样品表面。实验结果表明,烧蚀坑尺寸会随脉冲数的增加而增加,而脉冲宽度的增加会加大脉冲个数对烧蚀坑直径的影响。通过烧蚀坑直径的平方值与激光脉冲能量之间存在的对数关系,得到了不同脉冲宽度下镍基高温合金的多脉冲材料阈值。3种不同脉宽下的高温合金多脉冲去除阈值都存在显著的累积效应。根据去除阈值计算得到290 fs,1 ps和7 ps脉宽下的累积效应系数分别为0.88,0.86和0.78。     

脉宽对中红外激光带内损伤HgCdTe材料的影响

研究了脉宽对于中红外脉冲激光带内损伤碲镉汞（HgCdTe）材料阈值的影响,使用一维自洽模型对激光辐照HgCdTe材料程中的载流子数密度,载流子对数目流,载流子对能流,载流子温度和材料晶格温度等相关参数进行仿真计算。仿真结果表明,波长2.85 μm,脉宽30 ps～10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值为200～500 mJ/cm2。其中,300 ps～3 ns脉冲激光的损伤阈值相近,均为200 mJ/cm2且低于其他脉宽激光的损伤阈值。搭建实验光路并进行相关实验验证仿真模型的正确性。实验发现,波长2.85 μm、脉宽300 ps的单脉冲激光带内辐照HgCdTe材料的损伤阈值在200 mJ/cm2左右。相同条件下,10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值约474 mJ/cm2。百皮秒脉冲激光对HgCdTe材料的损伤过程结合了热击穿和光学击穿效应,其独特的毁伤机理加剧了材料的损伤。     

脉冲激光辐照氮化硅陶瓷损伤阈值的光谱测量

氮化硅陶瓷具有耐高温、耐腐蚀和耐磨损等优异性能, 可应用于金属材料和高分子材料难以胜任的极端工作环境。但具备这些优良特性的同时也给其加工带来了不便,传统的磨削加工方法效率低,设备损耗严重, 激光辅助加工为其提供了一种新途径。将等离子体光谱法和显微成像法相结合,对脉冲激光辐照氮化硅陶瓷的损伤阈值进行了测量,并分析了损伤机理。实验选用热压烧结氮化硅陶瓷为靶材,参考ISO21254国际损伤阈值测试标准搭建试验系统,采用1-on-1法利用Nd3+∶YAG固体脉冲激光分别在纳秒和微秒脉宽下辐照氮化硅陶瓷,两种脉宽分别选取10个能量密度梯度进行激光辐照,每个能量密度辐照10个点。利用光纤光谱仪采集光谱信息,利用金相显微镜获取显微图像信息,将光谱结果与显微成像结果对比分析, 发现纳秒脉宽下材料一旦损伤光谱上就会出现等离子体峰,通过分析光谱中等离子体峰,元素指认是否含有材料中特征元素即可判断损伤,为了区别空气电离击穿同时测量了空气等离子体光谱对比分析剔除干扰。微秒脉宽下显微图像观察到刚开始损伤时,光谱中只出现较强热辐射谱线并未出现等离子体谱线,进一步增加激光能量密度,光谱中会出现少量等离子体峰,因此不能直接以等离子体峰判断材料损伤阈值。利用金相显微镜观察损伤形貌,纳秒脉宽下在损伤区域内部观察到明显的烧蚀冲击状损伤,光谱呈现出大量等离子体谱线,说明纳秒激光辐照氮化硅损伤机制主要为等离子体冲击波引起的力学损伤效应。微秒脉宽在辐照区域边缘发现热烧蚀痕迹,损伤区内观察到大量熔融物,出现明显热辐射光谱,说明微秒激光辐照氮化硅损伤机制主要是由于长脉宽热积累引起的热损伤效应,随着能量密度增加热辐射谱上叠加有等离子体峰,等离子体峰值强度与损伤程度一致。利用零几率损伤阈值法对两种方法测得结果进行了拟合,分析发现等离子体光谱法更适用于纳秒脉宽下损伤阈值测量,得到结果为0.256 J·cm-2;显微成像法适用于微秒脉宽下损伤阈值测量,得到结果为6.84 J·cm-2。     

激光波长及脉宽对光学材料抗损伤性能的影响

 基于能带理论,利用激光与光学材料相互作用的理论模型,研究了激光辐照下材料导带自由电子数密度的变化,讨论了材料损伤阈值与激光波长、脉冲宽度、材料禁带宽度之间的关系,数值分析了激光波长和脉冲宽度对损伤阈值的影响。结果表明:当脉宽小于1 ps时,材料损伤阈值随脉宽增大而减小;当脉宽大于1 ps时,材料损伤阈值随脉宽增大而增大;激光波长为10 fs~10 ns,损伤阈值随着波长的减小而减小。     

激光辐照光伏型光电探测器热效应的有限元分析

建立了高斯激光辐照光伏(PV)型光电探测器温升的三维物理模型，采用有限元分析方法计算了探测器的三维温度场分布，探讨了辐照时间、胶层厚度和胶层热导率对熔融损伤阈值及热恢复时间的影响。研究结果表明：InSb PV型探测器受到强激光连续辐照时会发生熔融损伤破坏，且最早发生于迎光面的光斑中心；激光的功率越高，造成损伤破坏所需要的时间越短；热导率越大，越薄的胶层对应的损伤阈值越大，但胶层厚度和热导率对熔融损伤阈值的影响在大功率激光辐照时才较明显。为了提高PV型探测器抗激光辐照能力，应选用热导率大且尽可能薄的胶层。采用该模型计算得到10W功率激光辐照下的熔融时间为3.26s,与实验得到的3s基本吻合。     

多脉冲激光作用下光学薄膜损伤的累积效应

研究了高反射膜在多脉冲激光作用下损伤的累积效应.实验中使用1064nm调Q的Nd∶YAG激光器，脉宽是12 ns，频率为10 Hz.实验发现:高反射膜的损伤阈值随辐照脉冲数增加而降低，表现出明显的累积效应.通过对损伤阈值和损伤概率以及辐照次数的统计性研究，并结合单脉冲辐照的结果，说明了存在于薄膜中微小的缺陷参与了多脉冲激光对薄膜的损伤过程,得到了制备IBS高反射膜的损伤阈值和照射次数的关系式，用Nomarski偏光显微镜观察了实验过程中样品的损伤形貌，发现是典型的缺陷损伤.     

Mechanisms of femtosecond laser-induced damage in magnesium fluoride

We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF₂.     

Imaging and autocorrelation of ultrafast infrared laser pulses in the 3-11-mum range with silicon CCD cameras and photodiodes

Standard silicon photodiodes and CCD cameras are convenient and inexpensive alternatives to cryogenically cooled diodes or arrays for autocorrelation and imaging of ultrafast IR laser pulses in the wavelength range 3-11 mum . The response of these Si devices to IR pulses of duration ~100 fs is proportional to E(n) , where E is the pulse energy and n is approximately the Si electronic bandgap divided by the photon energy.     

Analysis of thresholds of optical damage to the potassium and sodium chloride surface by femtosecond laser pulses

Comparative analysis of optical damage thresholds of potassium and sodium chloride surface by pulses with durations of 80 and 40 fs has been carried out. The critical radiation power in a pulse at the optical damage threshold for the ion crystals studied has been determined. An estimate of the optical damage thresholds of the sodium chloride surface by laser pulses with a duration of 20 fs is presented.     

飞秒激光对高反膜的破坏及其超快动力学过程

研究了800nm飞秒激光照射下45°高反膜ZrO2-Si O2的破坏及其超快动力学过程。利用原子力显微镜和扫描电镜观察了材料的烧蚀形貌,测量了破坏阈值与脉冲宽度、烧蚀深度与脉冲能量的依赖关系。随着脉冲宽度从50fs增加到900fs,其烧蚀阈值从0.35J/cm2增加到1.78J/cm2。烧蚀深度与激光能流密度近似成对数关系。当激光强度略高于烧蚀阈值时,材料很快被烧蚀到几百纳米,烧蚀深度表现出明显的层状特性。同时,利用建立的抽运探针实验系统,测量了高强度抽运脉冲作用下材料对探针光的反射率随延迟时间的变化,揭示了薄膜烧蚀的超快动力学过程。实验结果表明高反膜表层的材料对烧蚀特性有重要影响。     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.     

超短脉冲照射下氟化锂的烧蚀机理及其超快动力学研究

研究了超短脉冲激光照射下LiF晶体的破坏机理及其超快动力学过程,利用扫描电镜和原子力显微镜等测试手段,观测了飞秒激光照射下LiF晶体的烧蚀形貌。利用烧蚀面积与激光脉冲能量的对数关系确定了LiF晶体的破坏阈值,并利用非线性玻璃棒展宽脉宽,得到了800nm激光作用下LiF破坏阈值对激光脉宽（50～1000fs）的依赖关系;利用抽运一探针超快探测平台,探测了LiF烧蚀过程中反射率的变化。采用雪崩击穿模型,并根据晶体材料反射率与材料的介电常量的依赖关系,通过数值计算,模拟了材料烧蚀阈值与脉宽的依赖关系及材料激发过程中反射率的变化关系。结果表明,理论结果与实验结果符合较好。讨论了飞秒激光照射下LiF晶体中导带电子数密度的变化规律,并解释了相应的实验结果。     

Ultraviolet laser microstructuring of silicon and the effect of laser pulse duration on the surface morphology

The study of the laser pulse duration effect on the silicon micro-spikes morphology is presented. The microcones were produced by ultraviolet (248 nm) laser irradiation of doped Si wafers in SF₆ environment. The laser pulse duration was adjusted at 450 fs, 5 ps and 15 ns. We have analyzed the statistical nature of the spikes’ morphological characteristics, such as periodicity and apex angle by exploiting image processing techniques, on SEM images of the irradiated samples. The correlation of the quantitative morphological characteristics with the laser parameters (pulse duration, laser fluence and number of pulses) provides new insight on the physical mechanisms, which are involved on the formation of Si microcones.     

Pulsed laser damage of proustite

Pulsed laser damage thresholds have been measured for proustite (Ag₃ As S₃) as the wavelengths 0.694, 1.065, 1.32 and 10.6 μm. The damage thresholds have been found to vary with both the wavelength and duration of the irradiating pulse. At 1.065 μm damage thresholds are 0.38 J/cm² for pulses of duration <50 ns whilst for durations >50 ns a value of 7 MW/cm² is appropriate. The results suggest that damage is initiated by absorbing inclusions approximately 0.6 μm in diameter embedded within the crystals. These inclusions are heated by an incident pulse to cause catastrophic damage of both the surface and interior of an irradiated sample. A model has been developed to enable a study of the thermal behaviour of inclusions irradiated by laser pulses with Gaussian time-dependence to be made.