强流脉冲电子束辐照诱发金属纯镍中的空位簇缺陷

利用强流脉冲电子束(high-current pulsed electron beam,HCPEB)技术对多晶纯Ni进行了辐照处理,采用透射电子显微镜详细分析了辐照诱发的缺陷结构.HCPEB辐照后,纯镍表层积聚了幅值极大的残余应力,沿{111}晶面形成了稠密的位错墙及孪晶结构,另外还形成了大量的包括位错圈、堆垛层错四面体(SFT)及孔洞在内的空位簇缺陷.SFT缺陷的数量远高于其他空位簇缺陷,其周围区域位错密度很低.孔洞缺陷主要出现在SFT密集区域.HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变 关键词： 强流脉冲电子束 多晶纯Ni 空位簇缺陷 堆垛层错四面体     

强流脉冲电子束辐照诱发纯钼表面的损伤效应及结构缺陷

利用强流脉冲电子束（HCPEB）装置对纯钼表面进行辐照处理,并利用X射线衍射仪,扫描电子显微镜（SEM）、透射电子显微镜（TEM）详细分析了辐照表面的微观结构和损伤效应. 1次HCPEB辐照后,纯钼表层积聚了极大的残余应力,多次辐照后表面未融化区域出现大量绝热剪切带,且局部区域发生开裂. 微观结构分析显示,辐照后材料表面形成发散状的位错组态和大量空位簇缺陷;绝热剪切带内部是尺寸为1 μm 左右等轴状的再结晶晶粒. 剪切带造成的材料表面局部软化以及间隙原子偏聚于晶界是材料发生开裂的主要原因. 另外,表面熔化区域可形成尺寸为20 nm左右的纳米晶. 关键词： 强流脉冲电子束 纯钼 绝热剪切带 空位簇缺陷     

强流脉冲电子束作用下金属纯Cu的微观结构状态——变形结构

为了研究金属的超快变形机理,利用强流脉冲电子束(HCPEB)技术对多晶纯Cu进行了辐照处理,并利用透射电子显微镜对HCPEB诱发的表面微结构进行了表征.实验结果表明,HCPEB轰击多晶纯Cu后,在轰击表层诱发了幅值极大的应力和极高的应变速率.1次HCPEB轰击材料表层的变形结构以交滑移形成的位错胞和位错缠结结构为主;多次轰击后平行的位错墙和孪晶是该区域的主要变形结构特征;原子面的扩散乃至位错攀移可在晶界和孪晶界上形成台阶结构.根据各自区域的变形结构特征,对相应的变形机理进行了探讨. 关键词： 强流脉冲电子束 多晶Cu 变形结构 孪晶     

强流脉冲电子束作用下金属纯Cu的微观结构状态——空位簇缺陷及表面微孔结构

利用强流脉冲(HCPEB)电子束技术对多晶纯Cu进行了辐照处理,并利用透射电镜对HCPEB诱发的空位簇缺陷进行了表征.实验结果表明,HCPEP辐照金属可在纯Cu表层诱发大量的过饱和空位,并形成四方形空位胞及空位型位错圈和堆垛层错四面体(SFT),HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变导致的整个原子平面的位移是空位簇缺陷形成的主要原因.此外,扫描电镜分析表明HCPEB辐照可以在纯Cu表面形成高密度、弥散分布和尺寸细小的微孔.过饱和空位或空位团簇沿晶体缺陷向表面扩散、凝聚是表面微孔形成的根     

强流脉冲电子束作用下金属锆的微观结构与应力状态

利用强流脉冲电子束 (HCPEB) 技术对金属纯锆进行表面处理, 采用X射线衍射, 扫描电子显微镜及透射电子显微镜详细分析了辐照诱发的表层微观结构和缺陷. X射线分析结果表明, HCPEB辐照后在材料表层诱发幅值为GPa量级的压应力, 并形成{0002}, {1012}, {1120}及{1013}织构. 表层微观结构观察表明, 与其他金属材料不同, HCPEB辐照在材料表层诱发的熔坑数量极少, 多次轰击甚至几乎没有表面熔坑的形成. 此外, 在快速的加热和冷却状态下, 在表面熔化层形成大量的超细晶粒结构, 同时诱发马氏体相变和强烈的塑性变形. 1次HCPEB辐照后表层内形成的变形微结构以位错为主, 孪晶数量较少; 5 次辐照样品的位错密度迅速增高, 孪晶数量也显著增加; 10次辐照后样品中的变形微结构以变形孪晶为主, 且出现二次孪晶现象. 表层晶粒内部变形的晶体学特征不仅决定了表层的织构演化行为, 而且还起到细化晶粒的作用, 为纯锆及锆合金表面强化提供了一条有效的途径. 关键词： 强流脉冲电子束 纯锆 微观结构 应力状态     

强流脉冲电子束辐照诱发多晶纯铝中的空位缺陷簇结构

利用强流脉冲电子束（HCPEB）技术对多晶纯铝样品进行辐照,采用透射电子显微镜详细分析了辐照诱发的空位簇缺陷.HCPEP辐照后,在辐照表层内形成了大量的四方形空位胞,其间包含位错圈和堆垛层错四面体（SFT）等类型的空位簇缺陷.1次辐照后,空位胞内产生空位型位错圈,5次辐照则主要产生SFT;10次辐照后,空位胞内产生的空位簇缺陷主要是位错圈,局部区域也观察到了SFT缺陷,在产生SFT的附近区域具有很低的位错密度或者几乎无位错出现.HCPEB辐照产生的瞬间加热和冷却诱发了幅值极大且应变速率极高的应力,这一因素 关键词： 强流脉冲电子束 多晶纯铝 空位簇缺陷 堆垛层错四面体     

强流脉冲电子束作用下纯镍表面的应力特征

 利用强流脉冲电子束（HCPEB）装置对多晶纯镍进行轰击,采用X射线衍射及扫描电子显微镜等技术,详细分析了受轰击样品的变形组织与结构。通过分析建立了强流脉冲电子束诱发的应力特征与变形结构之间的关系,并对目前现有的几种应力波数值模拟结果进行了讨论。实验结果表明：强流脉冲电子束能够在材料表层诱发约5GPa的应力,造成纯镍表面发生孪生塑性变形。除了热膨胀引起的表层横向准静态热应力外,强流脉冲电子束产生的等离子体脉冲爆炸可以直接诱发幅值很高的冲击应力波,二者的共同作用是引起表层微观结构变化的直接原因。     

纳米多晶铜的超塑性变形机理的分子动力学探讨

在聚能装药爆炸压缩形成射流的过程中, 伴随着金属药型罩的晶粒细化, 从原始晶粒30-80 μm细化到亚微米甚至纳米量级, 从微观层面研究其细化机理和动态超塑性变形机理具有很重要的科学意义. 采用分子动力学方法模拟了不同晶粒尺寸下纳米多晶铜的单轴拉伸变形行为, 得到了不同晶粒尺寸下的应力-应变曲线, 同时计算了各应力-应变曲线所对应的平均流变应力. 研究发现平均流变应力最大值出现在晶粒尺寸为14.85 nm时. 通过原子构型显示, 给出了典型的位错运动过程和晶界运动过程, 并分析了在不同晶粒尺寸下纳米多晶铜的塑性变形机理. 研究表明: 当晶粒尺寸大于14.85 nm时, 纳米多晶铜的变形机理以位错运动为主; 当晶粒尺寸小于14.85 nm时, 变形机理以晶界运动为主, 变形机理的改变是纳米多晶铜出现软化现象即反常Hall-Petch关系的根本原因. 通过计算结果分析, 建立了晶粒合并和晶界转动相结合的理想变形机理模型, 为研究射流大变形现象提供微观变形机理参考.     

强流脉冲电子束诱发纯钛表面的微观结构及应力状态

利用强流脉冲电子束(HCPEB)装置对金属纯钛进行轰击,采用X射线衍射,扫描电子显微镜及透射电子显微镜技术详细分析了轰击样品表层的结构和缺陷. X射线衍射分析表明, HCPEB能够在材料表层诱发幅值为 GPa量级的压应力,并在(100), (102)和(103)晶面出现择优取向.表层微观结构的观察表明: HCPEB轰击后材料表层发生了马氏体相变,形成了大量的片状马氏体组织; 此外, HCPEB轰击还在辐照表面诱发了强烈的塑性变形,一次轰击后,晶粒内部的塑性变形以(100)晶面的位错滑移为主,位错密度显著提高;多次轰击后,样品变形结构发生变化,变形孪晶的数量明显增多. 这些变形微结构不仅影响表层的织构演化行为,而且还能细化晶粒,进而提高材料表面硬度, 为HCPEB技术进行纯钛表面强化提供了一条有效的途径.     

AISI 304L奥氏体不锈钢表面微孔结构的强流脉冲电子束快速制备与表征

 利用强流脉冲（HCPEB）电子束技术,对AISI 304L奥氏体不锈钢进行了辐照处理,并利用透射电子显微镜对HCPEB诱发的空位簇缺陷进行了表征。实验结果表明,HCPEB辐照金属可在辐照表层诱发大量的过饱和空位,并形成空位型位错圈和堆垛层错四面体（SFT）。利用金相显微镜、扫描电子显微镜和非接触式光学轮廓仪,对其表面形貌进行了详细的表征,发现电子束处理后的样品表面形成了高密度、弥散分布和尺寸细小的微孔,表面微孔是由于HCPEB轰击诱发的大量空位(簇)缺陷,以线或面等结构缺陷为路径,向表层迁移导致空位的累积而形成的。采用HCPEB技术,选择合适的材料和辐照工艺参数,可以成功地制备出表面多孔金属材料。     

Surface modification of Al-20Si alloy by high current pulsed electron beam

Hypereutectic Al-20Si (Si 20 wt.%, Al balance)alloy surface was treated with high current pulsed electron beam (HCPEB) under different pulse numbers. The results indicate that HCPEB irradiation induces the formation of metastable structures on the treated surface. The coarse primary Si particle melts, producing a “halo” microstructure with primary Si as the center on the melted surface. A supersaturated solid solution of Al is formed in the melted layer caused by Si atoms dissolving into the Al matrix. Cross-section structure analysis shows that a 4 μm remelted layer is formed underneath the top surface of the HCEPB-treated sample. Compared with the matrix, the Al and Si elements in the remelted layer are distributed uniformly. In addition, the grains of the Al-20Si alloy surface are refined after HCPEB treatment, as shown by TEM observation. Nano-silicon particles are dispersed on the surface of remelted layer. Polygonal subgrains, approximately 50-100 nm in size, are formed in the Al matrix. The hardness test results show that the microhardness of the α(Al) and eutectic structure is increased with increasing pulse number. The hardness of the “halo” microstructure presents a gradient change after 15 pulse treatment due to the diffusion of Si atoms. Furthermore, hardness tests of the cross-section at different depths show that the microhardness of the remelted layer is higher than that of the matrix. Therefore, HCPEB technology is a good surface modification method for enhancing the surface hardness of hypereutectic Al-20Si alloy.     

Surface nanocrystallization mechanism of a rare earth magnesium alloy induced by HVOF supersonic microparticles bombarding

A nanostructured surface layer with a thickness up to 60 μm was produced on a rare earth Mg-Gd-Y magnesium alloy using a new process named HVOF-SMB (high velocity oxygen-fuel flame supersonic microparticles bombarding). The microstructural features of the treated surface at various depth of the deformed layer were characterized by optical microscopy (OM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) with an aim to reveal the formation mechanism. Results showed that three steps during grain refinement process were found, i.e., twinning dominates the plastic deformation and divides the coarse grains into finer twin platelets at the initial stage, stacking faults are generated and a number of dislocation slip systems are activated leading to the cross slips with increasing strain and strain rate, eventually high-density dislocation networks, dislocation cells and dislocation arrays are formed, which further subdivides the twin platelets and residual microbands into sub-microstructures. As a result, homogeneous nanostructure with a grain size of about 10-20 nm is formed through dynamic recrystallization in the topmost surface layer. Based on the experimental observations, a grain refinement mechanism induced by plastic deformation with higher strain rate during the HVOF-SMB treatment in the rare earth Mg-Gd-Y alloy was proposed.     

Surface modification of Al-12.6Si alloy by high current pulsed electron beam

The paper investigates the microstructure and property modifications of Al-12.6Si alloy induced by high current pulsed electron beam (HCPEB) treatment. The scanning electron microscope (SEM) results show a fine and equiaxed grain structure of several micrometers is obtained on the top surface of the melted layer. Underneath the top surface, a remelted layer with about 10 μm thickness is obtained and a supersaturated solid solution of Al is formed in the remelted layer. XRD analysis shows that the relative strength of diffraction peaks of Al (1 1 1) and Si (1 1 1) crystal planes is increased after HCPEB treatment. As a result, relative wear resistance of HCPEB-treated sample is significantly improved by a factor of 2.5 due to fine grain strengthening and solid solution strengthening. Therefore, the HCPEB treatment has a good application future in treating Al-Si alloys.     

激光冲击690高强钢位错组态与晶粒细化的实验研究

为研究激光冲击材料内部位错组态和晶粒细化的关系,用脉冲激光对690高强钢试样进行了冲击强化处理,采用扫描电镜和透射电镜分别获得了冲击后试样的扫描电子显微像和透射电子显微像、高分辨电子显微像,并对高分辨电子显微像进行快速傅里叶逆变换,从位错组态角度建立了激光冲击690高强钢晶粒细化模型.结果表明,690高强钢试样经功率密度为5.09 GW/cm^2的激光冲击加载后,其材料内部位错增殖、表层晶粒细化,截面晶粒尺寸大小分布在80~200 nm;析出相与基体保持半共格关系,基体中分布着众多刃型位错、位错偶以及扩展位错等缺陷,其中位错偶是由带割阶的螺型位错运动形成;通过由位错、扩展位错、空位等构成的几何位错界面扩展交汇把原始大晶粒分割成细小晶粒;激光冲击690高强钢晶粒细化模型可以描述激光冲击690高强钢位错运动主导的晶粒细化过程.     

Structural,morphological and mechanical properties of laser-irradiated copper using continuous wave diode laser

Laser irradiation effects on morphological, structural and mechanical properties of copper are explored. The targets are exposed by employing low-cost continuous wave (CW) laser (wavelength of 532?nm) in air. The surface morphology, structural and mechanical modification of irradiated targets was investigated by scanning electron microscopy (SEM) (Fei, Quanta 250), an X-ray diffractrometer (XRD) (DMAX III ARigaku, Japan) and a Vickers hardness tester, respectively. The SEM analysis revealed the exfoliation sputtering, electronic sputtering, thermal stresses and cracks. The grain size, dislocation line density, relative intensity and d-spacing of irradiated metals were studied by XRD. Micro hardness is found to increase with the increase in time of laser irradiation, in accordance with the Vickers hardness tester. This work provides a cost-effective, user-friendly and easy-to-handle study of several properties of irradiated targets with good results.     

The microlevel size of grains and fragments as a factor determining the density of dislocations and disclinations

The role of the size effect in the formation of defect structures in metallic materials was studied experimentally. The objects of study were ultrafine grain (UFG) copper, nickel, and martensitic steel. The effect of the size of grains and fragments on the scalar density of dislocation and the density of partial disclinations was studied by means of transmission electron microscopy (TEM). Measurements were performed for the 100–500 nm range of grain and fragment sizes. Similarities was found in the behavior of grain and fragmented structures.