梳状波导结构中石墨烯表面等离子体的传播性质

理论上研究了介质/石墨烯/介质梳状波导结构中表面等离子体的传播性质. 波导中表面等离子体模的有效折射率随着石墨烯费米能级的提高而减小, 随着介质折射率的增加而增加. 分析和仿真结果表明, 基于这种梳状波导可以在中红外波段实现新型的纳米等离子体滤波器, 器件的尺度在几百纳米的范围. 通过改变梳状分支的长度, 石墨烯的费米能级, 介质的折射率和波导中石墨烯的层数, 很容易来调节带隙的位置. 另外, 滤波带隙的宽度随着梳状分支数的增加而增加. 这种滤波性质将在可调的高集成光子滤波器件中具有潜在的应用.     

石墨烯TE模表面等离子体波和表面等离子体波导的特性

基于含石墨烯的双/三层介质结构中的光学色散方程,研究了覆层和基底层材料对石墨烯表面等离子体波横电(TE)模的影响。计算结果表明,近红外波段内,石墨烯表面等离子体波TE模的性质对覆层和基底层介电常数的差值极其敏感。当覆层和基底层介电常数出现微小差异时,TE模可以进行传输。随着两介电常数差值的增大,TE模的有效折射率显著增大,甚至超过覆层折射率,而传播损耗不断减小。对于三层介质结构,相邻两介质分界面间添加单层石墨烯形成了平板波导结构,研究该结构发现,当传导层和基底层介电常数相近时,其夹层的石墨烯对波导TE模的调控尤其显著,这种调控来源于电磁波耦合到石墨烯形成的表面等离子体波TE模。这些结果为设计调制器、检测器和过滤器等石墨烯表面等离子体波导器件提供了理论支持。     

基于VO2和石墨烯实现hBN声子极化激元和自发发射率的主动调谐

鉴于极化激元对介电环境异常敏感的特性,本文中提出了双曲材料六方氮化硼(hBN)和石墨烯与相变材料二氧化钒(VO₂)组成的异质结构,用来研究hBN声子极化激元(PhPs)的主动可调谐性.研究结果表明,通过控制hBN/VO₂异质结构中VO₂相变可实现对hBN PhPs的主动调谐,获得主动可调谐的自发发射(SE)率.当在hBN/VO₂异质结构中添加石墨烯时,会在hBN双曲线带内耦合产生双曲等离子体-声子极化激元(HPPPs),而在双曲线带外产生表面等离子体-声子极化激元(SPPPs),通过控制VO₂相态和调节石墨烯化学势亦可实现石墨烯/hBN/VO₂异质结构的耦合色散及SE率的主动调谐.该研究为使用诸如相变材料和石墨烯等功能材料调谐各向异性光学材料与光的相互作用机制提供了理论指导.     

负折射率材料对Casimir效应的影响

研究了负折射率材料介质板间的Casimir效应.对于负折射率材料中由Drude-Lorentz型色散关系描述的介电常数和磁导率，色散曲线中负值频带的曲线结构由各色散吸收参数所决定，色散曲线负值频带宽度和负区域的深度等性质的变化影响了介质材料板的反射特性，进而对两材料板间的Casimir效应强弱起着重要的作用.     

加入增益介质的表面等离子体激元耦合共振波导传输特性理论研究

将增益介质加入金属环构成的表面等离子体激元耦合共振波导,利用传输矩阵及时域有限差分方法研究了不同增益系数下该耦合共振波导的透射谱线、色散关系以及群折射率.结果表明,增益介质共振频率附近的反常色散及正常色散变化能有效影响由共振波导几何结构决定的色散关系曲线,且具有相反的效果,分别使其变得平坦和陡峭,从而放大和缩小由共振波导几何结构决定的群折射率.另外,增益系数随外加抽运光改变的特点使得加入增益介质的耦合共振波导具有传输性能可灵活调节特性.文章的研究对促进耦合共振波导在高密度光学集成中的广泛应用具有积极意义. 关键词： 增益介质 耦合共振波导 表面等离子体激元 群折射率     

用于生物传感的相位调制的铝膜-石墨烯结构

为了提高铝基等离子体传感器的灵敏度和稳定性,提出了一种基于相位调制增敏的表面等离子体共振传感结构:铝膜-石墨烯复合结构.采用Kretschmann传感结构,将铝膜和多层石墨烯依次沉积在高折射率棱镜上.基于传输矩阵原理,模拟计算激发光波长为632.8 nm时,几何结构参数对传感性能的变化规律.研究结果表明,相比于传统的角度调制模式,该传感结构采用相位调制模式,可以实现2个数量级的灵敏度增强.同时,石墨烯薄层的引入不仅能够有效阻止等离子体铝膜被氧化,而且能够产生近83倍的探测灵敏度增强因子.对于界面折射率变化为1.333～1.334 2 RIU,该复合结构的最大差分相位为94.663o,能够产生超高的相位探测灵敏度7.888 5×104 o/RIU.该传感结构可为开发低成本、超灵敏的铝基等离子体传感器件提供参考.     

各向异性特异材料波导中表面等离子体的共振性质

使用时域有限差分法,研究了各向异性特异材料(AMM)作为包层的AMM/介质/AMM波导中表面等离子体的共振性质.色散关系表明,当特异材料为负磁导率的always-cutoff型时,AMM/介质/AMM波导支持TE极化的表面等离子体,表面等离子体的波长随着中间介质层的厚度和特异材料磁等离子体频率的减小而变短.在有限长度AMM/介质/AMM波导中,由于两端界面的反射,表面等离子体模在波导中形成Fabry-Perot共振,而实现亚波长的表面等离子体微腔.在共振频率,电场强度在微腔的中部达到最大值,而磁场分别在两端界面处达到最大,电磁能强局域在中间介质层中,这一性质将在可调的具有强局域特性的亚波长微腔及腔量子电动力学中具有潜在的应用.     

双曲色散型单轴左手介质中的折射

研究了横磁波在各向同性右手介质和双曲色散型单轴左手介质界面处波矢和能流的折射。计算发现,当入射角在很大范围内变化时,波矢的折射角和能流的折射角几乎不变。调节光轴角可使波矢折射角和能流折射角随入射角变化不敏感的现象更明显,经分析计算给出光轴角的调节范围。这一现象是由双曲色散型单轴左手介质的各向异性及负的主折射率引起的,可以用来实现光束准直、光束整合、光束压缩以及方便的光束耦合。如果光从双曲色散型单轴左手介质向各向同性右手介质入射,还能实现超棱镜(superprism)现象。计算了横磁波穿越界面时的透过率,证实双曲色散型单轴左手介质可能实现上述应用。     

非互易旋电材料硅基矩形波导的色散特性研究

研究设计了基于光通信C波段旋电材料的矩形波导,利用有效折射率法对波导有效折射率及横向电场分布进行求解,得到矩形波导中E_(mn)~x导模的色散方程.研究了在外磁场作用下表面磁等离子体激元的非互易传播特性.还研究了结构参数和材料折射率对非互易色散关系、时延特性的影响.结果表明:其色散曲线随波导宽度的递增逐渐趋向平面波导;群速度v_g与波导宽度、传播常数、工作波长相关;矩形波导芯区宽度在140—233.5 nm范围内的波导工艺容差较大; v_g与矩形波导y方向包层材料折射率成正相关,当材料为金属银时慢光效应最明显,传输速度最小可以达到2.8×10~(–3)c.     

含双曲超构材料的复合周期结构的带隙调控及应用

等频面的拓扑结构强烈影响光在材料中的行为.通常组成光子晶体原胞的材料都是介电材料,其等频面都具有相同的封闭拓扑结构.结构最为简单的光子晶体是由两种介电材料交替组成的一维光子晶体.然而,这种传统的光子晶体在横磁和横电偏振下的光子带隙将随着入射角的增大而向短波方向移动,既不利于全向带隙的产生与展宽,又使得基于光子带隙的一些应用限制在很窄的入射角度范围内.本综述利用双曲超构材料对电磁波相位的独特调控作用,在由具有开放的等频面的双曲超构材料和具有封闭的等频面的普通介电材料交替组成的复合周期结构中实现了随入射角零移以及红移的特殊带隙,为研制具有新型功能的光学器件提供了新机理.基于零移带隙,可设计具有固定带宽的全向反射器和宽角度的近完美光吸收器.基于红移带隙,可设计宽角度的偏振选择器和超灵敏折射率传感器.     

Electron tunneling in single layer graphene with an energy gap

When a single layer graphene is epitaxially grown on silicon carbide,it will exhibit a finite energy gap like a conventional semiconductor,and its energy dispersion is no longer linear in momentum in the low energy regime.In this paper,we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap.It is found that when the electron is at a zero angle of incidence,the transmission probability as a function of incidence energy has a gap.Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor.The conductance under zero temperature has a gap.The properties of electron transmission may be useful for developing graphene-based nano-electronics.     

含单负材料三明治结构的电磁隧穿特性

在理论分析的基础上,结合实验研究了单负材料/正折射率材料(或单负材料)/单负材料三明治结构的电磁隧穿性质.这种结构的电磁隧穿来源于入射平面波与结构的表面或体极化激元的耦合,从理论上讨论并计算了正入射情况下这种结构中的极化激元的色散关系.发现:由单负材料作为边界而正折射率材料为中间层的三明治结构具有体极化激元,这种极化激元的共振频率随着中间层厚度的增加向低频移动;由不同性质的单负材料构成的三明治结构具有两条色散曲线,这两条色散曲线随着中间层厚度的增加而简并.随后基于L-C传输线技 关键词： 单负材料 极化激元 隧穿 L-C传输线')" href="#">L-C传输线     

Magneto-phonon polaritons in two-dimension antiferromagnetic/ion-crystalic photonic crystals

Magneto-phonon polaritons in a two-dimension photonic crystal (PC) are discussed. This PC is constructed by embedding a periodical square lattice of ionic-crystal cylinders into an antiferromagnet. The two media are dispersive, with their individual resonant frequencies near each other. We first set up an effective-medium method to obtain the effective magnetic permeability and dielectric permittivity of the PC, followed by the dispersion relations of surface and bulk polaritons. There are a number of new surface polaritons, and two new distinctive bulk polariton bands in which the negative refraction and left-handedness can appear. The numerical calculations are based on the example, FeF₂/TlBr PC.     

高斯光束在单轴挛晶界面上的反射与折射

给出了高斯光束入射到挛晶结构的电磁场分布,解出了反射系数和透射系数。根据晶体的色散关系解出了入射角、反射角和折射角关于晶体参量及波矢的方程,并根据角度方程给出了在一定参量下反射角和折射角关于入射角变化的关系图,以图示的方法显示了光束在界面处的异常性质。根据角度关系和反射、透射系数分析了异常光束在界面处能够出现二性折射、负反射、全透射和全反射等光束的奇特性质;分析了出现这些奇特性质对晶体参量和入射角所要求的条件。根据时间平均的能流密度公式,用数值模拟的方法给出了二性折射、全透射和全反射在特定参量下的高斯光束在挛晶内的能流密度分布图及当发生全反射时不同宽度光束在界面处关于入射角的古斯-亨兴(Goos-Hanchen)位移。     

Thermoplasma polariton within scaling theory of single-layer graphene

The electrodynamics of single-layer graphene is studied in the scaling regime. At any finite temperature, there is a weakly damped collective thermoplasma polariton mode whose dispersion and wavelength-dependent damping is determined analytically. The electric and magnetic fields associated with this mode decay exponentially in the direction perpendicular to the graphene layer, but, unlike the surface plasma polariton modes of metals, the decay length and the mode frequency are strongly temperature-dependent. This may lead to new ways of generation and manipulation of these modes.     

Rashba effect in the graphene/ni(111) system

We report on angle-resolved photoemission studies of the electronic pi states of high-quality epitaxial graphene layers on a Ni(111) surface. In this system the electron binding energy of the pi states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinarily large energy shift up to 225 meV of the graphene-derived pi band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction between spin-polarized electrons in the pi band and the large effective electric field at the graphene/Ni interface. Our findings show that an electron spin in the graphene layer can be manipulated in a controlled way and have important implications for graphene-based spintronic devices.     

Surface phonon polariton characteristics of bulk wurtzite ZnO crystal

The surface phonon polariton (SPP) mode of bulk wurtzite (α-) zinc oxide (ZnO) crystal is investigated by means of p-polarized infrared attenuated total reflection (ATR) spectroscopy. From the ATR spectrum, a strong absorption dip corresponds to the SPP mode of bulk α-ZnO is clearly observed at 529 cm⁻¹. The experimental SPP mode showed good agreement with the theoretical SPP mode deduced from the surface polariton dispersion curve generated by the semi-infinite anisotropic crystal model.     

Strain-modulated anisotropic Andreev reflection in a graphene-based superconducting junction

We investigate the Andreev reflection across a uniaxial strained graphene-based superconducting junction. Compared with pristine graphene-based superconducting junction, three opposite properties are found. Firstly, in the regime of the interband conversion of electron-hole, the Andreev retro-reflection happens. Secondly, in the regime of the intraband conversion of electron-hole, the specular Andreev reflection happens. Thirdly, the perfect Andreev reflection, electron-hole conversion with unit efficiency, happens at a nonzero incident angle of electron. These three exotic properties arise from the strain-induced anisotropic band structure of graphene, which breaks up the original relation between the direction of velocity of particle and the direction of the corresponding wavevector. Our finding gives an insight into the understanding of Andreev reflection and provides an alternative method to modulate the Andreev reflection.     

Graphene-based modulation-doped superlattice structures

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed consisting of periodically arranged alternate layers: InAs/graphene/GaAs/graphene/GaSb. The undoped graphene/GaAs/graphene structure displays a relatively high conductance and enhanced mobilities at increased temperatures unlike the modulation-doped superlattice structure, which is more steady and less sensitive to temperature and the robust electrical tunable control on the screening length scale. The thermionic current density exhibits enhanced behavior due to the presence of metallic (graphene) monolayers in the superlattice structure. The proposed superlattice structure might be of great use for new types of wide-band energy gap quantum devices.     

Exciton-polaritons in halfspace

A rigorous method is presented describing the coupling between an exciton polariton in a halfspace semiconductor and the external driving field. The method is based on density matrix theory. It allows to consider realistic electron-hole interactions, spatial dispersion and extrinsic surface potentials. Without invoking additional boundary conditions or an artificial subdivision of the semiconductor it is shown that the influence of the surface can be isolated from the bulk behaviour. This is accomplished by a symmetric continuation of the restricted configuration space to bulk geometry inspired by the image source method in electrostatics. As a demonstration the solution is worked out for a simplified polariton model. The results are compared with other theories and with experimental reflection spectra.