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1.  Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template  
   李俊泽  陶岳彬  陈志忠  姜显哲  付星星  姜爽  焦倩倩  于彤军  张国义《中国物理 B》,2014年第23卷第1期
   The high power GaN-based blue light emitting diode(LED) on an 80-μm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition(MOCVD), hydride vapor-phase epitaxial(HVPE), and laser lift-off(LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction(XRD), high resolution transmission electron microscope(HRTEM), Rutherford back-scattering(RBS), photoluminescence, current-voltage and light output-current measurements. The width of(0002) reflection in XRD rocking curve, which reaches 173 for the thick GaN template LED, is less than that for the conventional one, which reaches 258. The HRTEM images show that the multiple quantum wells(MQWs) in 80-μmthick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.    

2.  Monolithic semi-polar(1■01) InGaN/GaN near white light-emitting diodes on micro-striped Si(100) substrate  
   《中国物理 B》,2019年第8期
   The epitaxial growth of novel GaN-based light-emitting diode(LED) on Si(100) substrate has proved challenging.Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si(100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells(MQWs) with different well widths are grown on semi-polar(1■01)planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission.    

3.  High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice  
   HUANG Yong  LI PeiXian  YANG Zhuo  HAO Yue  WANG XiaoBo《中国科学:物理学 力学 天文学(英文版)》,2014年第57卷第5期
   Significantly improved electrostatic discharge(ESD)properties of InGaN/GaN-based UV light-emitting diode(LED)with inserting p-GaN/p-AlGaN superlattice(p-SLs)layers(instead of p-AlGaN single layer)between multiple quantum wells and Mg-doped GaN layer are reported.The pass yield of the LEDs increased from 73.53%to 93.81%under negative 2000 V ESD pulses.In addition,the light output power(LOP)and efficiency droop at high injection current were also improved.The mechanism of the enhanced ESD properties was then investigated.After excluding the effect of capacitance modulation,high-resolution X-ray diffraction(XRD)and atomic force microscope(AFM)measurements demonstrated that the dominant mechanism of the enhanced ESD properties is the material quality improved by p-SLs,which indicated less leakage paths,rather than the current spreading improved by p-SLs.    

4.  Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes  
   阮军  于彤军  贾传宇  陶仁春  王占国  张国义《中国物理快报》,2009年第8期
   Polarization-resolved edge-emitting electroluminescence (EL) studies of In GaN/GaN MQWs of wavelengths from near-UV (390nm) to blue (468nm) light-emitting diodes (LEDs) are performed. Although the TE mode is dominant in all the samples of InGaN/GaN MQW LEDs, an obvious difference of light polarization properties is found in the InGaN/GaN MQW LEDs with different wavelengths. The polarization degree decreases from 52.4% to 26.9% when light wavelength increases. Analyses of band structures of InGaN/GaN quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue LEDs, and the high luminescence polarization degree of UV LEDs mainly comes from QW confinement and the strain effect. Therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of InGaN/GaN MQW LEDs from near violet to blue.    

5.  Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film  
   彭静  吴传菊  孙堂友  赵文宁  吴小锋  刘文  王双保  揭泉林  徐智谋《中国物理 B》,2012年第21卷第6期
   BaTiO3 (BTO) ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photolumineseence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ℃-400 ℃). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.    

6.  Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO<sub>3</sub> ferroelectric film  
   彭静  吴传菊  孙堂友  赵文宁  吴小锋  刘文  王双保  揭泉林  徐智谋《中国物理 B》,2012年第6期
   BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.    

7.  A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells  
   严启荣  闫其昂  石培培  牛巧利  李述体  章勇《中国物理 B》,2013年第2期
   A strain-compensated InGaN quantum well(QW) active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode(LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.    

8.  Wavelength Red-Shift of Long Wavelength InGaN/GaN Multi-Quantum Well by Using an InGaN Underlying Layer  
   黄黎蓉  文锋  童梁柱  黄德修《中国物理快报》,2009年第7期
   Long-wavelength Ga2N based light-emitting diodes are of importance in full color displays, monofithic white lightemitting diodes and solid-state lighting, etc. However, their epitaxial growth faces great challenges because high indium (In) compositions of lnGaN are difficult to grow. In order to enhance In incorporation and lengthen the emission wavelength of a InGaN/GaN multi-quantum well (MQW), we insert an InGaN underlying layer underneath the MQW. InGaN/GaN MQWs with various InGaN underlying layers, such as graded InyGal-yN material with linearly increasing In content, or InyGa1-yN with fixed In content but different thicknesses, are grown by metal-organic chemical vapor deposition. Experimental results demonstrate the enhancement of In incorporation and the emission wavelength redshift by the insertion of an InGaN underlying layer.    

9.  New Phosphors for White LEDs  
   《合成化学》,2004年第Z1期
   White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or UV LEDs) and photoluminescence phosphors. GaN-based highly efficient blue InGaN LEDs combined with phosphors can produce white light. These solid-state LED lamps have a number of advantages over conventional incandescent bu…    

10.  Improved Photoluminescence in InGaN/GaN Strained Quantum Wells  
   丁立贞  ;陈弘  ;何苗  ;江洋  ;卢太平  ;邓震  ;陈芳胜  ;杨帆  ;杨旗  ;张玉力《中国物理快报》,2014年第7期
   The influence of strain accumulation on optical properties is investigated for InCaN/CaN-based blue lightemitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InCaN multi-quantum wells (MQWs) byadopting more InCaN/CaN MQWs pairs. The alleviation of strain relaxation in a superlattice layer results in the crystalline perfection and effective quality improvement of the epitaxial structures. With suitable control of the crystalline quality and reduced strain relaxation in the MQWs, there shows a 4-fold increase in light output luminous efficiency as compared to their conventional counterparts.    

11.  A GaN AlGaN InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED  
   杨斌  郭志友  解楠  张盼君  李婧  李方正  林宏  郑欢  蔡金鑫《中国物理 B》,2014年第4期
   The advantages of a GaN–AlGaN–InGaN last quantum barrier(LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN–AlGaN–InGaN LQB, which enhances electron confinement and improves hole injection efficiency.    

12.  Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors  
   杨斌  郭志友  解楠  张盼君  李婧  李方正  林宏  郑欢  蔡金鑫《中国物理 B》,2014年第4期
   The advantages of a GaN-AlGaN-InGaN last quantum barrier (LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombi- nation rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.    

13.  Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer  
   刘超  任志伟  陈鑫  赵璧君  王幸福  尹以安  李述体《中国物理 B》,2013年第5期
   P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6×1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp 2 Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.    

14.  Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED  
   路慧敏  陈根祥《中国物理 B》,2011年第20卷第3期
   GaN-based irregular multiple quantum well(IMQW) structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes(LEDs) are optimized in order to obtain near white light emissions.The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain,well-coupling,valence band-mixing and polarization effect through employing a newly developed theoretical model from the k · p theory.Several structure parameters such as well material component,well width,layout of the wells and the thickness of barrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure.Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two,the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness.The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.    

15.  Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits  
   王敏帅  黄晓菁《中国物理 B》,2013年第8期
   We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.    

16.  Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers  
   王幸福  童金辉  赵璧君  陈鑫  任志伟  李丹伟  卓祥景  章俊  易翰翔  李述体《中国物理 B》,2013年第9期
   The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.    

17.  Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition  被引次数:1
   陆羽 杨志坚 潘尧波 徐科 胡晓东 章蓓 张国义《中国物理快报》,2006年第23卷第1期
   The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes (LEDs) grown by metalorganic chemical vapour deposition is investigated by using photoluminescence (PL) and highresolution x-ray diffraction. The full width at half maximum of PL of A1 doped LEDs is measured to be about 12nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130mW in the case of the induced current of 200mA.    

18.  Degradation behaviors of high power GaN-based blue light emitting diodes  
   钟灿涛  于彤军  颜建  陈志忠  张国义《中国物理 B》,2013年第11期
   The degradation mechanism of high power InGaN/GaN blue light emitting diodes(LEDs)is investigated in this paper.The LED samples were stressed at room temperature under 350-mA injection current for about 400 h.The light output power of the LEDs decreased by 35%during the first 100 h and then remained almost unchanged,and the reverse current at 5 V increased from 10 9A to 10 7A during the aging process.The power law,whose meaning was re-illustrated by the improved rate equation,was used to analyze the light output power-injection current(L–I)curves.The analysis results indicate that nonradiative recombination,Auger recombination,and the third-order term of carriers overflow increase during the aging process,all of which may be important reasons for the degradation of LEDs.Besides,simulating L–I curves with the improved rate equation reveal that higher-than-third-order terms of carriers overflow may not be the main degradation mechanism,because they change slightly when the LED is stressed.    

19.  Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters  
   杨薇  武翌阳  刘宁炀  刘磊  陈钊  胡晓东《中国物理 B》,2013年第4期
   We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.    

20.  Effect of the thickness of InGaN interlayer on a-plane GaN epilayer  
   王建霞  汪连山  张谦  孟祥岳  杨少延  赵桂娟  李辉杰  魏鸿源  王占国《中国物理 B》,2015年第24卷第2期
   In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire.We find that the thickness of InGaN has a great influence on the growth of a-GaN.The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer.When the InGaN thickness exceeds a critical point,the a-GaN epilayer peels off in the process of cooling down to room temperature.This is an attractive way of lifting off a-GaN films from the sapphire substrate.    

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