Zn,O共掺杂实现p型AlN的第一性原理研究

基于密度泛函理论(density functional theory),采用第一性原理平面波超软赝势法,研究了纤锌矿AlN,Zn掺杂和Zn,O共掺杂AlN的晶体结构、能带、电子态密度、差分电荷分布及电荷布居数.计算结果表明:Zn,O共掺杂方法中引入激活施主O原子,能使受主能级向低能方向移动,形成了浅受主能级.同时,受主能带变宽、非局域化特征明显、从而提高了Zn原子的掺杂浓度和系统的稳定性.Zn,O共掺杂更有利于获得p型AlN. 关键词： 第一性原理 AlN 电子结构 p型共掺杂     

Mg,O共掺杂实现p型AlN的第一性原理研究

采用密度泛函理论下的第一性原理平面波超软赝势方法研究了纤锌矿本征AlN,Mg单掺杂AlN和Mg,O共掺杂AlN体系的晶格参数、能带结构、电子态密度、差分电荷密度及电子布居数.计算结果显示:在Mg,O共掺杂AlN体系中,激活施主O原子的引入能使受主能级降低,形成浅受主掺杂.同时,体系的非局域化特征显著,受主能带变宽.因而提高了Mg原子的受主掺杂浓度和系统的稳定性.Mg,O共掺杂更有利于制备p型AlN.     

Be、Mg掺杂AlN电子结构的第一性原理计算

基于密度泛函理论(Density Functional Theory)框架下的第一性原理平面波超软赝势方法,计算分析了纤锌矿结构的AlN晶体和Be、Mg掺杂AlN晶体的晶格参数、结合能、能带结构、总体态密度、分波态密度、差分电荷分布及电荷集居数.计算结果表明:Be和Mg都是良好的p型掺杂剂,但是Be掺杂AlN晶体比Mg提供的空穴更多,Be比Mg更有利于AlN晶体的p型掺杂.     

Be、Mg 掺杂AlN电子结构的第一性原理计算

基于密度泛函理论(Density Functional Theory) 框架下的第一性原理平面波超软赝势方法,计算分析了纤锌矿结构的AlN晶体和Be、Mg掺杂AlN晶体的晶格参数、结合能、能带结构、总体态密度、分波态密度、差分电荷分布及电荷集居数．计算结果表明: Be和Mg都是良好的p型掺杂剂,但是Be掺杂AlN晶体比Mg提供的空穴更多,Be比Mg更有利于AlN晶体的p型掺杂．     

纤锌矿结构ZnO中定位Ga-N共掺杂对p型掺杂效率的影响

采用第一性原理和密度泛函理论的方法,计算未掺杂、N单掺杂和Ga-N共掺杂纤锌矿结构ZnO的总能、电荷密度和能带结构.总能计算表明,Ga原子的共掺杂使总能极大地降低,从而显著提高杂质N原子在ZnO中的稳定性.电荷密度分布显示,总能的降低主要是Ga-N共掺杂后Ga原子的3d态和N原子的2p态电子之间的强杂化相互作用所致.特别是在Ga原子的负电荷和N原子的正电荷沿c轴排成一线的共掺杂构型中,较大的局域极化场的变化引起价带顶向禁带中的大分裂,降低了N受主的激活能,将空穴的浓度提高了三个量级,有效地提高p型掺杂效率.     

Be, O共掺杂实现p型AlN的第一性原理研究

基于密度泛函理论框架下的第一性原理平面波超软赝势方法,研究了掺杂和非掺杂AlN体系的晶格参数、 能带结构、总体态密度、分波态密度、差分电荷分布及电荷集居数.计算结果表明: Be掺杂AlN晶体能够在能隙中形成深受主能级,空穴载流子局域于价带顶, 而引入了激活施主O原子的Be, O共掺杂方法,能使受主能带变宽、非局域化特征明显. 同时,受主能级向低能方向移动,形成了浅受主能级, 从而提高了Be原子的掺杂浓度和系统的稳定性. Be, O共掺杂更有利于获得p型AlN.     

N，Ga共掺杂实现p型ZnO的第一性原理研究

采用第一性原理的超软赝势方法,研究了纤锌矿ZnO在本征及N-Ga,2N-Ga共掺杂情况下的几何结构、能带、电子态密度.结果显示,共掺杂N-Ga构型具有更稳定的结构.研究还发现:共掺杂2N-Ga的ZnO结构有效地提高了载流子浓度,非局域化特征明显,更有利于获得p型ZnO.     

Zn,Cd掺杂AlN电子结构的第一性原理计算

基于密度泛函理论(DFT)框架下的第一性原理的平面波超软赝势方法(USPP),对Zn,Cd掺杂AlN的32原子超原胞体系进行了几何结构优化,从理论上给出了掺杂和非掺杂体系的晶体结构参数。计算了掺杂AlN晶体的结合能、电子态密度、差分电荷密度,并对计算结果进行了细致的分析。计算结果表明,Cd、Zn都可以提供很多的空穴态,是良好的p型掺杂剂,但是相对于Cd, Zn原子在AlN晶体中的溶解度更大,并且可以提供更多的空穴,有利于形成更好的p型电导。     

掺杂GaN/AlN超晶格第一性原理计算研究

第一性原理计算方法在解释实验现象和预测新材料结构及其性质上有着重要作用. 因此, 通过基于密度泛函理论的第一性原理的方法, 本文系统地研究了Mg和Si掺杂闪锌矿和纤锌矿两种晶体结构的GaN/AlN超晶格体系中的能量稳定性以及电学性质. 结果表明: 在势阱层(GaN 层)中, 掺杂原子在体系中的掺杂形成能不随掺杂位置的变化而发生变化, 在势垒层(AlN层)中也是类似的情况, 这表明对于掺杂原子来说, 替代势垒层(或势阱层)中的任意阳离子都是等同的; 然而, 相比势阱层和势垒层的掺杂形成能却有很大的不同, 并且势阱层的掺杂形成能远低于势垒层的掺杂形成能, 即掺杂元素(Mg_Ga, Mg_Al, Si_Ga和Si_Al)在势阱区域的形成能更低, 这表明杂质原子更易掺杂于结构的势阱层中. 此外, 闪锌矿更低的形成能表明: 闪锌矿结构的超晶格体系比纤锌矿结构的超晶格体系更易于实现掺杂; 其中, 闪锌矿结构中, 负的形成能表明: 当Mg原子掺入闪锌矿结构的势阱层中会自发引起缺陷. 由此, 制备以闪锌矿结构超晶格体系为基底的p型半导体超晶格比制备n型半导体超晶格需要的能量更低并且更为容易制备. 对于纤锌矿体系来说, 制备p型和n型半导体的难易程度基本相同. 电子态密度对掺杂体系的稳定性和电学性质进一步分析发现, 掺杂均使得体系的带隙减小, 掺杂前后仍然为第一类半导体. 综上所述, 本文内容为当前实验中关于纤锌矿结构难以实现p型掺杂问题提供了一种新的技术思路, 即可通过调控相结构实现其p型掺杂.     

高空穴浓度Mg掺杂InGaN外延材料性能的研究

采用金属有机物化学气相沉积方法生长得到具有不同Mg掺杂浓度In_xGa_1-xN (0≤x≤0.3)外延材料样品. 对样品的电学特性和光学特性进行了系统的研究. 研究发现：在固定Mg掺杂浓度下，随In组分的提高，样品空穴浓度显著提高,最高达2.4×10¹⁹cm^-3,Mg的活化效率提高了近两个数量级；通过对Mg掺杂InGaN(InGaN：Mg)样品的光致发光(PL)谱的分析，解释了InGaN：Mg样品的载流子跃迁机理，并确定了样品中Mg受主激活能和深施主能级的位置. 关键词： Mg掺杂InGaN 高空穴浓度 光致发光 金属有机物化学气相沉积     

纤锌矿BeO掺Cd的电子结构与能带特性研究

采用基于密度泛函理论平面波赝势方法, 对纤锌矿BeO掺Cd的Be_1-xCd_xO合金进行电子结构与能带特性研究. 结果表明: Be_1-xCd_xO的价带顶始终由O 2p电子态决定, 而导带底由Be 2s和Cd 5s的电子态决定.随着Be_1-xCd_xO合金的Cd掺杂量增加, Cd 4d与O 2p的排斥效应逐渐加强, 同时Be_1-xCd_xO的带隙逐渐变小, 出现"直接-间接-直接"的带隙转变. 为了使理论值与实验值相一致, 对Be_1-xCd_xO带隙进行修正, 并分析了纤锌矿BeO-ZnO-CdO三元合金的带隙和弯曲系数与晶格常数的关系.     

A first-principles calculation on the electronic properties of Si/N-codoped TiO2

To deeply understand the effects of Si/N-codoping on the electronic structures of TiO₂ and confirm their photocatalytic performance, a comparison theoretical study of their energetic and electronic properties was carried out involving single N-doping, single Si-doping and three models of Si/N-codoping based on first-principles. As for N-doped TiO₂, an isolated N 2p state locates above the top of valence band and mixes with O 2p states, resulting in band gap narrowing. However, the unoccupied N 2p state acts as electrons traps to promote the electron-hole recombination. Using Si-doping, the band gap has a decrease of 0.24 eV and the valence band broadens about 0.30 eV. These two factors cause a better performance of photocatalyst. The special Si/N-codoped TiO₂ model with one O atom replaced by a N atom and its adjacent Ti atom replaced by a Si atom, has the smallest defect formation energy in three codoping models, suggesting the model is the most energetic favorable. The calculated energy results also indicate that the Si incorporation increases the N concentration in Si/N-codoped TiO₂. This model obtains the most narrowed band gap of 1.63 eV in comparison with the other two models. The dopant states hybridize with O 2p states, leading to the valence band broadening and then improving the mobility of photo-generated hole; the N 2p states are occupied simultaneously. The significantly narrowed band gap and the absence of recombination center can give a reasonable explanation for the high photocatalytic activity under visible light.     

Study on the doping stability and electronic structure of wurtzite Zn1−xCdxO alloys by first-principle calculations

An ab initio calculation based on density functional theory is applied to study the doping stability and electronic structure of wurtzite Zn_1−xCd_xO alloys. It is found that the different alloy configurations of Zn_1−xCd_xO with a given Cd content are possible thermodynamically, but having different band gaps. With increasing Cd content, the formation enthalpy of Zn_1−xCd_xO alloy increases sharply. The Cd-content dependence of the band-gap values can be fitted with a second-order polynomial. The reduction of band gap can be attributed to the contributions of the hybridization of Zn-4s and Cd-5s, the enhancement of p-d repulsion, and the tensile strain due to Cd-doping.     

Electronic and optical properties of pure and Mo doped anatase TiO2 using GGA and GGA+U calculations

Comparative GGA and GGA+U calculations for pure and Mo doped anatase TiO₂ are performed based on first principle theory, whose results show that GGA+U calculation provide more reliable results as compared to the experimental findings. The direct band gap nature of the anatase TiO₂ is confirmed, both by using GGA and GGA+U calculations. Mo doping in anatase TiO₂ narrows the band gap of TiO₂ by introducing Mo 4d states below the conduction band minimum. Significant reduction of the band gap of anatase TiO₂ is found with increasing Mo doping concentration due to the introduction of widely distributed Mo 4d states below the conduction band minimum. The increase in the width of the conduction band with increasing doping concentration shows enhancement in the conductivity which may be helpful in increasing electron–hole pairs separation and consequently decreases the carrier recombination. The Mo doped anatase TiO₂ exhibits the n-type characteristic due to the shifting of Fermi level from the top of the valence band to the bottom of the conduction band. Furthermore, a shift in the absorption edge towards visible light region is apparent from the absorption spectrum which will enhance its photocatalytic activity. All the doped models have depicted visible light absorption and the absorption peaks shift towards higher energies in the visible region with increasing doping concentration. Our results describe the way to tailor the band gap of anatase TiO₂ by changing Mo doping concentration. The Mo doped anatase TiO₂ will be a very useful photocatalyst with enhanced visible light photocatalytic activity.     

Spectral red shift in the Ag2+ doped CdS quantum dots

Photoluminescence spectrum of pure and Silver (Ag²⁺) doped cadmium sulfide (CdS) quantum dots with different doping concentrations and pure Cd concentrations were carried out. A systematic red shift in the band gap energy, ranging from 2.48 eV to 2 eV was noticed with the increasing Ag²⁺ concentration, however, no shift in the band gap energy was observed for varying pure Cd concentration. The red shift of the band gap energy was consistent in both photoluminescence and absorption spectra and the observed energy shifts are equal to the fundamental and overtone energies of the longitudinal optical phonon of Cd²⁺S.     

Theoretical study of magnetic ordering and electronic properties of AgxAl1−x N compounds

Ferromagnetic ordering of silver impurities in the AlN semiconductor is predicted by plane-wave ultrasoft pseudopotential and spin-polarized calculations based on density functional theory (DFT). It was found that an Ag impurity atom led to a ferromagnetic ground state in Ag_0.0625Al_0.9375N, with a net magnetic moment of 1.95 μ_B per supercell. The nitrogen neighbors at the basal plane in the AgN₄ tetrahedron are found to be the main contributors to the magnetization. This magnetic behavior is different from the ones previously reported on transition metal (TM) based dilute magnetic semiconductor (DMS), where the magnetic moment of the TM atom impurity is higher than those of the anions bonded to it. The calculated electronic structure band reveals that the Ag-doped AlN is p-type ferromagnetic semiconductor with a spin-polarized impurity band in the AlN band gap. In addition, the calculated density of states reveals that the ferromagnetic ground state originates from the strong hybridization between 4d-Ag and 2p-N states. This study shows that 4d transition metals such as silver may also be considered as candidates for ferromagnetic dopants in semiconductors.     

掺Cd氧化锌的电子结构及相结构稳定性的第一性原理研究

采用基于密度泛函理论结合投影缀加平面波方法的VASP软件包,在考虑所有掺杂原子构型的前提下,对Cd掺杂ZnO合金的晶格常数、禁带宽度、电子态密度和形成焓进行了计算,分析了Cd含量和掺杂原子构型对纤锌矿wz-Zn_1-xCd_xO合金的电子结构和结构稳定性的影响.计算结果表明:随着Cd含量的不断增加,纤锌矿ZnCdO合金的平均晶格常数a,c均线性增加,但c/a的比值不会发生显著的变化;纤锌矿ZnCd 关键词： 密度泛函理论 ZnCdO合金 电子结构 形成焓     

N掺杂锐钛矿TiO2电子结构的第一性原理研究

为了研究N掺杂对锐钛矿型TiO₂电子结构的影响，进而揭示N掺杂导致锐钛矿型TiO₂的禁带宽度变小的机理，对N掺杂TiO₂进行了基于密度泛函理论的第一性原理研究. 通过对能带、态密度及电子分布密度图的分析，发现在N掺杂后，N原子与Ti原子在导带区，发生了强烈的相互关联作用，致使Ti原子3d轨道上的电子向N原子2p轨道发生移动，使得导带降低了，从而使得TiO₂导带的禁带宽度变小.理论预测可以发生红移现象，与实验结果对比分析，理论与实验基本相符. 关键词： N掺杂 2')" href="#">锐钛矿型TiO₂ 电子结构     

Shifting the Superparamagnetic Limit of Nanosized Copper Iron Spinel

In this paper we analyze trend of EFG values measured at Cd impurity in a group of semiconducting delafossites with chemical formula CuBO₂ (B = Al, Fe, Cr, Nd). We conclude that this trend reveals one of the most subtle details in electronic spectrum of the compounds: if impurity states are formed within or out of the band gap. In CuAlO₂ and CuFeO₂ the Cd EFG exhibits larger value than in CuCrO₂ and CuNdO₂, when Cd substitutes the Cu atom. This occurs because in the first two compounds the Cd forms shallow band within the gap, and in the second two compounds does not. When Cd occupies the B position it exhibits almost the same EFG in all delafossites. In this case, Cd does not form its states within the gap in none of the compounds. To arrive to these conclusions we analyzed and calculated various systems (Cd-doped CuAlO₂ and CuCrO₂ compounds, fictitious molecules), using the FP-LAPW method.