基于对称广义Fibonacci光子晶体结构的电光可调谐滤波器

本文构建了含有电光材料LiNbO₃的一维对称广义Fibonacci光子晶体结构,提出并设计了一种基于该结构的可调谐滤波器,并利用传输矩阵法对设计的滤波器的可调谐滤波特性进行了理论研究.数据模拟结果表明:保持对称广义Fibonacci光子晶体的几何结构不变,通过改变电极所在处施加在电光介质(LiNbO₃)层上的外加电场,即可实现滤波器的滤波通道波长的调节,滤波通道波长的改变与外加电压呈线性关系,随着外加电压的增加,滤波通道波长向短波长方向移动.此外,电压一定时,通道波长随光的入射角的增加向短波长方向移动;光的入射角一定时,外加正电压下,通道波长随电压增加发生蓝移,而外加负电压下,通道波长随反向电压的增加发生红移.最后,讨论了双电场作用下的多通道波长滤波器的结构极其特性.以上结果对于新型光子晶体器件的设计具有重要的参考价值.     

广义Fibonacci准周期结构声子晶体透射性质的研究

提出了一维广义Fibonacci准周期结构的声子晶体模型. 对弹性波通过该一维准周期结构声子晶体的透射系数进行数值计算,并与周期结构和标准Fibonacci准周期结构声子晶体的透射系数进行比较. 结果表明,利用一维广义Fibonacci准周期结构的声子晶体可获得比周期结构和标准Fibonacci准周期结构声子晶体更大的带隙范围,同时在带隙内有更丰富的局域模式存在. 对局域模性质的研究有助于声波或弹性波滤波器的制作. 关键词： 广义Fibonacci准周期结构 声子晶体 局域化     

基于Fibonacci序列准周期结构的小角度低通空间滤波器

利用常规材料构造了Fibonacci序列准周期结构,运用传输矩阵法研究了该结构的空间传输特性,并基于该结构优良的空间传输特性设计了小角度低通空间滤波器.数值模拟结果表明,该小角度空间滤波器的角域带宽可通过改变序列的结构类型和序列数来调谐,其调谐规律为:随着Fibonacci序列F(m,1)中m值的增加,对应空间滤波器的角域带宽减小;随着序列数的增大,对应角域带宽也减小.在调谐的基础上,还可通过改变构成准周期结构的介质折射率参量来精确调节其角域带宽.相比于基于超材料的小角度空间滤波器而言,基于Fibonacci序列的小角度空间滤波器制备更简单,且有望应用于新一代的高功率激光系统中.     

电光晶体调谐的外腔反馈半导体激光器

报道一种用电光晶体实现快速调谐和凋制激光频率的方法.在Littrow型外腔反馈半导体激光中插入LiNbO3晶体,利用LiNbO3晶体的电光效应,通过改变晶体电压来调节激光器的有效腔长,可以对激光频率进行快速的调谐和调制.采用该方法,自制外腔反馈半导体激光器的调谐频率可达到2 kHz,它的调谐范围为350 MHz,激光频率调谐系数约为1.06 MHz/V,用饱和吸收光谱观测频率调谐的效果.快速激光频率调制可以应用在稳频技术上,将外腔反馈半导体激光器调制在5～100 kHz频率下,均获得了87Rb原子D2线的饱和吸收光谱的色散信号,并实现了激光频率在饱和吸收峰上的长期稳定.     

超导-介质型Fibonacci光子晶体的透射谱与滤波特性分析

目前广泛应用的可调谐光滤波器通过调节干涉腔长度来实现波段的调谐。它需要制备高反射悬浮膜,而悬浮膜在驱动电压的影响下其运动会受到限制,且较窄的透射峰与较大的调谐范围二者不可兼得。为此,本文将光子晶体中的其中一种介质以超导材料取而代之。基于超导理论,利用传输矩阵法对一维超导-介质型Fibonacci光子晶体的透射谱进行了计算,讨论了厚度、折射率以及温度对透射谱的影响。结果表明,受光子带隙的影响,超导体的频率禁带中会出现一系列的通带;Fibonacci等级的增加会导致第一透射峰更加尖锐;介质层光学厚度增大、超导层厚度减小、温度升高均能使透射峰向长波方向移动。最后,在透射谱分析的基础上给出了结构为S11(S5)n的滤波特性,兼顾透射峰半高宽与可调谐范围,确定了滤波器的可调谐波段,在无需调整任何几何参数的条件下实现了温控调谐。     

利奥型可调谐液晶电光滤波器的特性分析

根据液晶的电光效应和利奥滤波器的原理设计了利奥型液晶电光调谐滤波器，并且从理论上和实验上证明了其可行性；为了克服其在红外波段的缺点，设计了法布里-珀罗腔液晶可调谐滤波器，并且给出了理论模拟。理论模拟证明法布里-珀罗腔液晶可调谐滤波器具有调谐范围大、带宽窄的优点。     

电光可调谐有限脉冲响应滤波器设计

为得到高矩形度、低旁瓣、电光调谐逆向可导及通带带宽可调的电光可调谐滤波器,在x切y传的钛扩散铌酸锂(Ti∶LiNbO3)波导上,对周期性分布的N级叉指电极组提供分立电压V,产生周期性电场,实现似TE模与似TM模的偏振转换,进而实现滤波功能。该结构构成有限脉冲响应(FIR)网络,网络传输矩阵H(z)与电压V具有一一对应关系。利用z变换原理,运用待定系数法求解H(z),从而推导所需电压值V,实现了电光调谐逆向可导。加入不同电压,可以实现自由光谱范围(FSR)内不同通带宽度的可调谐滤波特性。通过仿真验证,该算法是可行的。当N为17时,边模抑制比(SMSR)可达到25dB。并且滤波曲线的矩形度随着叉指电极组级联级数N的增大而增大。     

采用电光效应实现双折射切趾的集成光学声光可调谐滤波器

声光可调谐滤波器（AOTF）是密集波分复用系统（DWDM）中的关键器件之一。影响该器件性能的一个主要因素是透过率曲线中旁瓣的存在。基于双折射切趾的原理，提出了利用LiNbO3 电光效应来实现切趾的新方案。对该方法进行了理论和实验两方面的研究，实验结果与理论基本相符。     

LiNbO3电光调谐光学参变振荡器

在光学参变振荡器中 ,角度或温度调谐方式的最大缺陷就是参变光波长变化较慢 ,调谐操作复杂 ;电光调谐方式具有调谐速度快 ,操作简单的优点。利用非线性光学晶体LiNbO3 的电光效应 ,在 1 0 6 4 μmNd∶YAG激光器输出的抽运光作用下 ,切割角θ =4 7.5°,在垂直于 1.0 6 μm抽运光偏振方向上加 - 4 .5 +4.5kV直流电压 ,实现参变光波长调谐输出 ,输出光能量约为 2 6mJ左右 ,转换效率 η≈ 17.3%。实验所得的参变光波长变化与调谐电压的线性关系与理论计算相吻合 ,为实现光学参变振荡器的快速调谐快速输出提供了一种可行的技术途径。     

La_3Ga_5SiO_(14)声光可调谐滤波器设计

分析了La3Ga5SiO14(简称LGS)既可以做成同向声光可调谐滤波器,又可以做成大孔径非同向声光可调谐滤波器。推导出超声波频率f和光波波长λo的调谐关系;计算出滤波器的光谱分辨率R和集光能力δiθ;光入射角iθ与衍射角θd、声入射角θa之间的关系。为LGS声光可调滤波器的实用化设计提供了充分可靠的理论依据。把LGS与TeO2声光可调滤波器的光谱分辨率和集光能力做了比较,认为LGS设计成同向声光可调谐滤波器既简便又实用。     

对称双缺陷光子晶体的可调谐滤波特性分析

基于光子晶体的光子局域特性,并利用光子晶体的介观压光效应,提出了一种新型的双通道可调滤波器结构.采用传输矩阵法对该滤波器的光学传输特性进行了理论推导,建立了透射谱与光子晶体结构参数的关系,讨论了介观压光效应对双缺陷光子晶体透射谱的影响,并对所设计的光子晶体结构进行了数值模拟.结果表明:随着入射角度的增大,缺陷峰发生蓝移.随着各介质层折射率或几何厚度的增加,缺陷峰发生红移.当光子晶体发生轴向拉伸应变时,缺陷峰的位置向长波长移动,但缺陷峰的峰值大体不变,从而验证了此滤波器的可调节性.该光子晶体滤波器结构紧凑,可调谐性好,为光子晶体激光器及传感器的设计提供了一定的理论参考.     

Compact interrogator for fiber optic Bragg sensors based on an acousto-optic filter formed by photonic crystal rows of air holes

Fiber optic sensors are typically used with expensive tunable lasers or optical spectrum analyzers for wavelength interrogation. We propose to replace the tunable laser by a broadband optical source incorporated with a novel thin linewidth acousto-optic tunable filter. It utilizes optical beam expanders constituted by photonic crystal rows of air holes in LiNbO(3) waveguide. A new design is numerically studied for a short structure (with 32 photonic crystal rows) by a two-dimensional finite-difference time-domain method. Extrapolation of these results to larger structure sizes (about 1 cm) demonstrates the possibility to develop compact interrogators with 0.4 pm wavelength resolution and 40 nm tunable range around 1550 nm.     

Tunability of temperature-dependent absorption in a graphene-based hybrid nanostructure cavity

Enhanced absorption is obtained in a hybrid nanostructure composed of graphene and one-dimensional photonic crystal as a cavity in the visible wavelength range thanks to the localized electric field around the defect layers. The temperature-induced wavelength shift is revealed in the absorption spectra in which the peak wavelength is red-shifted by increasing the temperature. This temperature dependence comes from the thermal expansion and thermo-optical effects in the constituent layers of the structure. Moreover, the absorption peaks can be adjusted by varying the incident angle. The results show that absorption is sensitive to TE/TM polarization and its peak values for the TE mode are higher than the TM case. Also, the peak wavelength is blue-shifted by increasing the incident angle for both polarizations. Finally, the possibility of tuning the absorption using the electro-optical response of graphene sheets is discussed in detail. We believe our study may be beneficial for designing tunable graphene-based temperature-sensitive absorbers.     

铁电液晶缺陷光子晶体调谐滤波器的设计

将铁电液晶作为缺陷层引入一维光子晶体中,用电场改变液晶分子的取向,形成光子晶体快速可调谐滤波器.用传输矩阵法研究了铁电液晶缺陷光子晶体的可调谐滤波特性,计算了电压和液晶材料参量对滤波器透射谱的影响.结果表明:改变电压能容易改变光子晶体滤波器透射峰的位置、强度、个数和带宽,实现良好的调谐滤波功能.     

一维光子晶体缺陷模偏振特性的研究

利用一维光子晶体的透射率公式,计算出一维光子晶体掺杂后TE波和TM波缺陷模的波长随入射角的响应曲线、缺陷模透射峰随入射角的响应曲线、缺陷模透射峰随入射波长的响应曲线.研究发现,TE波和TM波的缺陷模透射峰均随入射角的增加而向短波方向移动；TE波缺陷模透射峰的半高宽度(FWHM)和峰值随入射角的增加而减小,而TM波缺陷模透射峰的半高宽度(FWHM)和峰值确随入射角的增加而增加；对TM波其波长为λ0的缺陷模也存在明显的“广义布儒斯特角”现象, TE波的缺陷模不存在“广义布儒斯特角”现象.     

光子晶体多通道可调谐滤波器的理论研究

为了实现光子晶体的多通道滤波,对设计出的一维掺杂光子晶体进行了数值计算和理论分析。结果表明：多通道透射峰的波长与空气膜厚度呈线性变化,不同厚度的空气膜可以截到数目不同的透射峰,多通道透射峰的半高宽随光子晶体折射率n₂的增加而减小。以此为基础,设计出滤波通道波长的可调范围达60nm,滤波通道半高宽的可调范围为1nm～5nm,滤波通道透射峰值大于0.98的一维光子晶体三通道可调谐滤波器。     

Tunable rectangular array illuminator in periodically poled LiNbO3 crystal

An electro-optic tunable rectangular array illuminator in one-dimensional periodically poled LiNbO3 (PPLN) crystal is presented experimentally which result is in good agreement with results from simulation. The illuminator is formed based on the Talbot self-imaging effect by applying an electric field on PPLN. The intensity distribution of rectangular array could be precisely modulated. Compared with other array illuminators, this tunable illuminator uses a lower voltage and could get a more concentrated intensity distribution. The influence of the incident angle to the self-imaging patterns is studied for the first time.     

Synthesis and Band Gap Control in Three-Dimensional Polystyrene Opal Photonic Crystals

High-quality three-dimensional polystyrene opal photonic crystals are fabricated by vertical deposition method. The transmission properties with different incident angles and different composite refractive index contrasts are experimentally and theoretically studied. Good agreement between the experiment and theory is achieved. We find that with the increasing incident angle, the gap position shifts to the short wavelength (blue shift) and the gap becomes shallower; and with the increase of refractive index of the opal void materials and decrease the contrast of refractive index, the gap position shifts to the long wavelength (red shift). At the same time, we observe the swelling effects when the sample is immerged in the solutions with different refractive indices, which make the microsphere diameter in solution become larger than that in air. The understanding of band gap shift behaviour may be helpful in designing optical sensors and tunable photonic crystal ultrafast optical switches.     

A mid-infrared tunable filter in a semiconductor-dielectric photonic crystal containing doped semiconductor defect

In this work, we theoretically analyze tunable filtering properties in a semiconductor-dielectric photonic crystal (SDPC) containing doped semiconductor defect in the mid-infrared frequency region. We consider two possible configurations of filter structures, the symmetric and asymmetric ones. With a defect of the doped n-type semiconductor, n-Si, the resonant transmission peak can be tuned by varying the doping concentration, that is, the peak wavelength will be shifted to the position of lower wavelength for both structures. Additionally, by increasing the defect thickness, it is also possible to have a filter with multiple resonant peaks, leading to a multichannel filter. The results provide another type of tunable filter in the defective SDPC that could be of technical use for semiconductor applications in optical electronics.