High-power terahertz pulse sensor with overmoded structure

Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.     

Highly sensitive digital optical sensor with large measurement range based on the dual-microring resonator with waveguide-coupled feedback

We propose a novel high-performance digital optical sensor based on the Mach-Zehnder interferential effect and the dual-microring resonators with the waveguide-coupled feedback. The simulation results show that the sensitivity of the sensor can be orders of magnitude higher than that of aconventional sensor, and high quality factor is not critical in it. Moreover, by optimizing the length of the feedback waveguide to be equal to the perimeter of the ring, the measurement range of the proposed sensor is twice as much as that of the conventional sensor in the weak coupling case.     

Fiber Bragg grating pressure sensor with enhanced sensitivity

A novel fiber Bragg grating(FBG)pressure sensor with the enhanced sensitivity has been demonstrated.A piston-like diaphragm with a hard core in the center is used to enhance the sensitivity.Both the theoretical analysis and the experimental result show that the radius of the hard core has significant effect on the pressure sensitivity.When the radius of the hard core is 1.5 ram,a pressure sensitivity of 7.23 nm/MPa has been achieved.     

Fiber Bragg grating pressure sensor with enhanced sensitivity

A novel fiber Bragg grating (FBG) pressure sensor with the enhanced sensitivity has been demonstrated. A piston-like diaphragm with a hard core in the center is used to enhance the sensitivity. Both the theoretical analysis and the experimental result show that the radius of the hard core has significant effect on the pressure sensitivity. When the radius of the hard core is 1.5 mm, a pressure sensitivity of 7.23 nm/MPa has been achieved.     

A high sensitive fiber Bragg grating strain sensor with automatic temperature compensation

A high sensitive fiber Bragg grating （FBG） strain sensor with automatic temperature compensation is demonstrated. FBG is axially linked with a stick and their free ends are fixed to the measured object. When the measured strain changes, the stick does not change in length, but the FBG does. When the temperature changes, the stick changes in length to pull the FBG to realize temperature compensation. In experiments, 1.45 times strain sensitivity of bare FBG with temperature compensation of less than 0.1 nm Bragg wavelength drift over 100 ℃ shift is achieved.     

Analysis and Measurement of the Displacement Sensor Based on an Up-tapered Mach-Zehnder Interferometer

A displacement sensor based on an up-tapered Mach–Zehnder interferometer （MZI） is proposed and demonstrated experimentally. For this purpose, a fiber MZI is fabricated by using a commercial fusion splicer. Then the transmission spectra of the sensors with different middle fiber lengths are measured by bending the MZIs with different movements of the moving stage. The maximum sensitivity of 2.457 nm/mm is achieved while the shifting of the moving stage changes from 3 mm to 3.5 mm. Note that this kind of up-taper configuration is strong in strength, easy to fabricate and low in cost.     

Electronic transport properties of metallic single-walled carbon nanotubes

We have calculated the differential conductance of metallic carbon nanotubes by the scatter matrix methon.It is found that the differential conductance of metallic nanotube-based devices oscillates as a function of the bias voltage between the two leads and the gate voltage.Oscillation period T is directly proportional to the reciprocal of nanotube length.In addition,we found that electronic transport properties are sensitive to variation of the length of the nanotube.     

High sensitivity fiber Bragg grating pressure difference sensor

Based on the effect of fiber Bragg grating (FBG) pressure difference sensitivity enhancement by encapsulating the FBG with uniform strength beam and metal bellows, a FBG pressure difference sensor is proposed, and its mechanism is also discussed. The relationship between Bragg wavelength and the pressure difference is derived, and the expression of the pressure difference sensitivity coefficient is also given. It is indicated that there is good linear relation between the Bragg wavelength shift and the pressure difference of the sensor. The theoretical and experimental pressure difference sensitivity coefficients are 38.67 and 37.6 nm/MPa, which are 12890 and 12533 times of that of the bare FBG, respectively. The pressure difference sensitivity and dynamic range can be easily changed by changing the size, Young's modulus, and Poisson's ratio of the beam and the bellows.     

High-sensitivity long-period fiber grating sensor with SAN/cryptophane A for coal mine gas detection

A high-sensitivity long-period fiber grating （LPFG） methane sensor that contains a compact and uniform styrene-acrylonitrile （SAN）/cryptophane A nanofilm is presented. The sensor is prepared by using an automatic dip-coater in a solution of cryptophane A, SAN resin dissolved in ortho-dichlorobenzene, a low- volatile solvent. The effect of film thickness on the LPFG＇s resonant wavelength is thoroughly investigated. The optimum sensor among the three LPFGs with different film thicknesses is directly used to detect the methane concentration in a coal mine gas sample. The results indicate that the sensors with film thicknesses of 484 to 564 nm exhibit a redshifted resonant wavelength when the methane concentration is increased from 0% to 3.5% （vol）. The data demonstrates that the sensor with a film thickness of 484 nm has remarkable sensitivity （~0.633 nm%-X）, and its detection limit can reach 0.2%. The methane concentrations determined by our sensor are consistent with those obtained by gas chromatography.     

A high sensitive fiber Bragg grating cryogenic temperature sensor

At cryogenic temperature, a fiber Bragg grating （FBG） temperature sensor with controllable sensitivity and variable measurement range is demonstrated by using bimetal configuration. In experiments, sensitivities of -51.2, -86.4, and -520 pm/K are achieved by varying the lengths of the metals. Measurement ranges of 293 - 290.5, 283 - 280.5, and 259 - 256.5 K are achieved by shortening the distance of the gap among the metals.     

Interacting quantum wires: A possible explanation for the 0.7 anomalous conductance

We investigate an effective one-dimensional conducting channel considering both the contact umklapp and the Coulomb electron-electron interaction. We show that, at low electronic density, the proximity to the Wigner crystal reproduces the anomaly in conductance at 0.7G₀. The crucial ingredient of our theory is the fact that the gate voltage acts as a bias controlling the intensity of the umklapp term. At large gate voltages, the umklapp vanishes and we obtain a conducting quantum wire with a perfect conductance. At low gate voltages, the Wigner crystal is pinned by the umklapp term, giving rise to an insulating behavior with vanishing conductance. This crossover pattern has a transition point which can be identified with the anomalous conductance around 0.7G₀. This picture is obtained within the framework of a renormalization group calculation. The conductance static regime is achieved by taking first the limit of finite length and then the limit of zero frequency.     

基于游标效应的双芯光子晶体光纤温度传感器

设计了一种基于双芯光纤耦合效应和游标效应的高灵敏度温度传感器,传感器是由2个相差一定长度的双芯光子晶体光纤和单模光纤级联构成。双芯光子晶体光纤通过级联实现游标效应,同时对纤芯中间的气孔填充乙醇实现温度传感。仿真结果表明,该温度传感器在35 ℃～45 ℃范围内的平均温度灵敏度可达?20.37 nm/℃。与单纯依靠双芯光子晶体光纤能量耦合效应的传感器相比,该传感器的温度检测灵敏度提高了10倍。     

Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator

We propose and demonstrate a novel Ge photodetector on silicon-on-insulator based on a junction field effect transistor structure, where the field-effect transistor gate is replaced by a Ge island with no contact on it. Light incident on the Ge switches on the device by altering the conductance of the Si channel through secondary photoconductivity. The device's sensitivity is also enhanced by a vast reduction in parasitic capacitance. In cw measurements, proof-of-concept detectors exhibit up to a 33% change in Si channel conductance by absorbing only 200 nW of power at 1.55 microm. In addition, pulsed response tests have shown that rise times as low as 40 ps can be achieved.     

同时测量扭转角度和扭转方向的侧漏光子晶体光纤扭转传感器

基于所研制的侧漏型光子晶体光纤,提出并构建了出一种同时检测扭转角度 和扭转方向的高灵敏度Sagnac干涉仪型光纤扭转传感器.顺时针扭转时, 传感器传输谱向短波长方向偏移;逆时针扭转,向长波长方向偏移. 对传感器扭转特性的实验研究结果表明,构成Sagnac干涉仪的侧漏型光子晶体光纤的长度, 对扭转敏感系数和扭转角度测量范围起着决定性作用.当光纤长度较短时, 扭转传感器具有较大的扭转灵敏度,但扭转角度测量范围较小;光纤长度增加时,扭转灵敏度减小, 扭转角度测量范围增大.当构成Sagnac干涉仪的侧漏型光子晶体光纤长度为14.85 cm时, 传感器的扭转敏感系数可达到0.9354 nm/(°),扭转角度测量范围为-90°—90°; 光纤长度为32 cm时,最大扭转敏感系数降为0.2132 nm/(°), 扭转角度测量范围扩展至-180°—180°. 采用二维测量矩阵法可以有效排除温度对扭转角度的测量的影响. 关键词： 光纤传感器 侧漏型光子晶体光纤 扭转传感器 Sagnac干涉仪     

Scanning a metallic tip close to a quantum point contact

Low-temperature transport experiments on a quantum point contact under the influence of a scanning gate are reported. The scanning gate is the metallic tip of a scanning force microscope operating at a temperature of 300 mK. In particular, the influence of the scanning tip on conductance resonances observed in the gate-characteristics of the point contact is studied. The strongest conductance resonances appear to be related to the local potential within the channel of the point contact. As a consequence, the point contact with its conductance resonances can be used as a sensor for the local tip-induced potential.     

Signature of Kondo effect in silicon quantum dots

We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device. Received 13 November 2001 and Received in final form 18 February 2002     

Fabrication of diamond nanorods for gas sensing applications

Diamond nanorods were fabricated for a sensing device by utilizing reactive ion etching in CF₄/O₂ radio frequency plasma. The length of the nanorods has been controlled by the ion etching time. The obtained morphologies were investigated by scanning electron microscopy. The gas sensing properties of the H-terminated diamond-based sensor structures are indicating that we have achieved high sensitivity to detect phosgene gas. Also, our sensor exhibited good selectivity between humid air and phosgene gas if the measurement is conducted at elevated temperatures, such as 140 °C. Furthermore, such sensor response rating could reach as high value as 4344 for the phosgene gas, which was evaluated for the sample consisting of the longest nanorods (up to 200 nm).     

Influence of inter-dot Coulomb repulsion and exchange interactions on conductance through double quantum dot

Conductance and other physical quantities are calculated in double quantum dots (DQD) connected in series in the limit of coherent tunnelling using a Green's function technique. The inter-dot Coulomb repulsion and the exchange interaction are studied by means of the Kotliar and Ruckenstein slave-boson mean-field approach. The crossover from the atomic to the molecular limit is analyzed in order to show how the conductance in the model depends on the competition between the level broadening (dot-lead coupling) and the dot-dot transmission. The double Kondo effect was found in the gate voltage characteristics of the conductance in the atomic limit. In the case, when each dot accommodates one electron, the Kondo resonant states are formed between dots and their adjacent leads and transport is dominated by hopping between these two resonances. In the molecular limit the conductance vanishes for sufficiently low gate voltages, which means the Kondo effect disappeared. For small dot-lead coupling the transport characteristics are very sensitive on the influence of the inter-dot Coulomb repulsion and the position of the local energy level. The resonance region is widened with increase of the inter-dot Coulomb interactions while the exchange interaction has opposite influence.     

Transport in split-gate silicon quantum dots

We report on the transport properties of novel Si quantum dot structures with controllable electron number through both top and side gates. Quantum dots were fabricated by a split-gate technique within a standard MOSFET process. Four-terminal dc electrical measurements were performed at 4.2 K in a liquid helium cryostat. Strong oscillations in the conductance through the dot are observed as a function of both the top gate bias and of the plunger bias. An overall monotonic and quasi-periodic movement of the peak conductance is observed which is believed to be associated with the bare level structure of the electronic states in the dot coupled with the Coulomb charging energy. Crossing behavior is observed as well, suggestive of either many-body effects or symmetry breaking of the dot states by the applied bias.     

Slow conductance relaxation in insulating granular Al: evidence for screening effects

It is shown that the conductance relaxations observed in electrical field effect measurements on granular Al films are the sum of two contributions. One is sensitive to gate voltage changes and gives the already reported anomalous electrical field effect. The other one is independent of the gate voltage history and starts when the films are cooled down to low temperature. Their relative amplitude is strongly thickness-dependent which demonstrates the existence of a finite screening length in our insulating films and allows its quantitative estimate (about 10 nm at 4 K). This metalliclike screening should be taken into account in the electron glass models of disordered insulators.