多孔氧化铝薄膜的光致发光起源:三种缺陷中心

在草酸溶液中用二次阳极氧化法制备了纳米多孔氧化铝薄膜,分析了制备过程中氧化铝薄膜中缺陷的形成机理.场发射电子显微镜给出了薄膜的表面形貌和结构.X射线色散能谱和傅里叶红外透射光谱测试表明,进入薄膜中的草酸杂质加热到500℃未全部分解.对多孔氧化铝薄膜的光致发光PL光谱做了高斯拟合,结合测试结果和薄膜中的缺陷分析指出:多孔氧化铝薄膜的发光由F+,F和草酸杂质相关缺陷引起,对应发光中心分别在402,433,475 nm处,并提出F中心起主导作用.对不同草酸浓度中制备的多孔氧化铝薄膜的PL光谱讨论指出:随草酸浓度增加,三种发光中心的峰位不会发生变化,但相对强度发生改变,F+中心和F中心减少,草酸杂质相关发光中心增加,PL峰红移.最后提出通过控制草酸浓度来控制多孔氧化铝薄膜中的草酸杂质.此研究将对多孔氧化铝薄膜发光起源和机理有更深入的理解,同时也为多孔氧化铝薄膜的制备提供一种全新的思路.     

乙醇对纳米多孔氧化铝薄膜光致发光特性的影响

采用二次阳极氧化法,用乙醇与草酸的混合溶液制备纳米多孔氧化铝薄膜。扫描电子微镜结果显示,乙醇与草酸混合溶液中制备的氧化铝薄膜形貌更规整,有序度更高。光致发光测试结果表明,该混合电解液制备的薄膜的光致发光强度有明显的提高,且随乙醇浓度的增加,发光强度逐渐增大。结合红外反射光谱及X光电子能谱对上述实验现象进行了分析,为多孔氧化铝薄膜掺杂和改善其发光特性提供了新的思路。     

脉冲激光退火纳米碳化硅的光致发光

采用XeCl准分子脉冲激光退火技术制备了纳米晶态碳化硅薄膜(nc-SiC),并对薄膜的光致发光(PL)特性进行了分析。结果表明,纳米SiC薄膜的光致发光表现为300～600 nm范围内的较宽发光谱带,随退火激光能量密度的增加,nc-SiC薄膜398 nm附近的发光峰相对强度增加,而470 nm附近发光峰相对减小。根据nc-SiC薄膜的结构特性变化, 认为这两个发光峰分别来源于6H-SiC导带到价带间的复合发光和缺陷态发光,并且这两种发光过程存在竞争。     

溶胶-凝胶法Er_2O_3薄膜的结构和光学特性

针对稀土Er掺杂Si光源中Er离子掺杂浓度低的问题,采用溶胶-凝胶(Sol-gel)法在Si(100)和SiO2/Si(100)基片上旋涂法制备Er2O3光学薄膜,Er离子浓度与以前掺杂方法相比提高了2个数量级.900℃热处理获得单一立方结构的Er2O3薄膜材料.光致发光(PL)特性研究表明在654nm波长的激光泵浦下,Er2O3薄膜材料获得了1.535μm的发光峰,并具有较小的温度猝灭1/5.在SiO2/Si(100)基体上制备的Er2O3薄膜材料的光致发光强度比Si(100)基体上制备的薄膜提高2-3倍.研究结果表明具有强光致发光特性的Er2O3薄膜是一种有前景的硅基光源和放大器材料.     

生长温度对6H-SiC上SiCGe薄膜发光特性的影响

利用低压化学气相淀积工艺在6H-SiC衬底成功制备了SiCGe薄膜。通过光致发光(PL)谱研究了生长温度对SiCGe薄膜发光特性的影响。结果表明:生长温度为980,1030,1060℃的SiCGe薄膜的室温光致发光峰分别位于2.13,2.18,2.31eV处;通过组分分析和带隙计算,认定该发光峰来自于带间辐射复合,证实了改变生长温度对SiCGe薄膜带隙的调节作用。同时,对SiCGe薄膜进行了变温PL测试,发现当测试温度高于200K时,发光峰呈现出蓝移现象。认为这是不同机制参与发光所造成的。     

退火温度对GdBO3∶Eu3+/AAO薄膜形貌和发光性质的影响

利用水热反应和高温退火,在100 nm孔径的多孔氧化铝(AAO)模板表面制备了GdBO3∶Eu3+/AAO发光薄膜。通过X射线粉末衍射(XRD)、扫描电子显微镜(SEM)和光致发光(PL)等手段表征了GdBO3∶Eu3+/AAO薄膜的结构、形貌和发光性质。SEM显示GdBO3∶Eu3+/AAO的形貌可通过调节退火温度控制。XRD和PL的结果表明,在AAO模板的表面所组装的GdBO3∶Eu3+为六方碳钙石型(Vaterite-type)结构。PL的结果表明:5D0→7F2和5D0→7F1的相对发射强度与退火温度有关,5D0→7F2红色发射与5D0→7F1橙色发射之比值随退火温度的降低而增加,降低退火温度可使GdBO3∶Eu3+/AAO样品的色纯度得到改善。     

Co/AAO纳米有序阵列复合结构的光致发光和光吸收特性

以草酸电解液制备的高度有序的纳米级多孔阳极氧化铝(AAO)为模板,采用交流电化学沉积工艺合成了Co/AAO纳米有序阵列复合结构。分别研究了AAO模板和Co/AAO结构的光致发光和光吸收特性。结果表明,AAO模板在350～550nm范围内存在较强的光致发光带,其峰位在395nm处;Co/AAO纳米有序阵列复合结构的光致发射峰位亦在395nm处,且发光峰强度随Co沉积量的增加而迅速减弱。实验发现,Co/AAO纳米有序阵列复合结构的光吸收边从近紫外至近红外的波段范围内发生大幅度红移,最大红移量甚至超过380nm。文章定性分析并解释了Co/AAO纳米有序阵列复合结构吸收边大幅度红移及其光发射峰位不变、而峰强减弱的主要原因。     

衬底温度对PLD法生长的Mg0.05Zn0.95O薄膜结构和发光特性的影响

用脉冲激光沉积(PLD)法在不同温度的Si(111衬底上成功制备了c轴择优取向的Mg0.05Zn0.95O薄膜.通过X射线衍射(XRD)和光致发光谱(PL)研究了衬底温度对Mg0.05Zn0.95O薄膜结构和发光特性的影响,探讨了膜的结晶质量与发光特性之间的关系.结果表明,在衬底温度为450℃时生长的Mg0.05Zn0.95O薄膜具有很好的轴取向和较强的光致发光峰.室温下分别用激发波长为240,300和325nm的氙灯作为激发光源得到不同样品的PL谱,分析表明紫外发光峰和紫峰来源于自由激子的复合辐射且发光强度与薄膜的结晶质量密切相关,蓝绿发光峰与氧空位有关.此外,探讨了衬底温度影响紫外光致发光峰红移和蓝移的可能机理.     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

溶胶-凝胶法Er2O3薄膜的结构和光学特性

针对稀土Er掺杂Si光源中Er离子掺杂浓度低的问题,采用溶胶-凝胶（Sol-gel）法在Si(100)和SiO2/Si(100)基片上旋涂法制备Er₂O₃光学薄膜,Er离子浓度与以前掺杂方法相比提高了2个数量级.900 ℃热处理获得单一立方结构的Er₂O₃薄膜材料.光致发光（PL）特性研究表明在654 nm波长的激光泵浦下,Er₂O₃薄膜材料获得了1.535 μm的发光峰,并具有较小的温度猝灭1/5.在SiO₂/Si(100)基体上制备的Er2O3薄膜材料的光致发光强度比Si(100)基体上制备的薄膜提高2-3倍.研究结果表明具有强光致发光特性的Er₂O₃薄膜是一种有前景的硅基光源和放大器材料.     

The effect of oxalic and sulfuric ions on the photoluminescence of anodic aluminum oxide formed in a mixture of sulfuric and oxalic acid

Anodic aluminum oxide (AAO) films with highly ordered pore arrays were prepared in sulfuric, oxalic acids and their mixture solutions, respectively. The photoluminescence (PL) measurements show that AAO films formed in the mixture electrolytes have PL bands in the wavelength range of 300–450 nm, which mainly arise from the oxalic impurities incorporated into AAO films. However, the sulfuric ions have a strong effect on the PL bands. With the increase of the concentration of sulfuric ions in the mixture electrolyte, the blueshift of the PL bands occurs from 410 to 345 nm. The reasons of the results are being discussed.     

不同退火条件对纳米多孔氧化铝薄膜光致发光的影响

以草酸为电解液,采用二次阳极氧化法制备出了纳米多孔氧化铝薄膜,经不同退火温度和退火气氛处理氧化铝薄膜后,通过分析其光致发光光谱得出：相同的退火气氛中, 退火温度T≤600 ℃ 时,T=500 ℃具有最大的光致发光强度;退火温度T≥700 ℃时,随着退火温度的升高,样品的发光强度增大。在不同的退火气氛中,多孔氧化铝薄膜随着退火温度的升高,发光峰位改变不同,即在空气中退火处理后,随着退火温度的升高,发光峰位蓝移,而在真空中退火处理后,发光峰位并不随退火温度的升高而变化;通过对1 100 ℃高温退火处理后的氧化铝薄膜的光致发光曲线的高斯拟合,可以看出,经退火处理后的多孔氧化铝,主要存在三个发光中心,发光曲线在350～600 nm范围内对应三个发射峰, 发射波长分别为387,410,439 nm。相同的退火温度下,空气中退火得到的氧化铝薄膜的光致发光强度大于真空中退火处理后的氧化铝薄膜。基于实验结果,结合X射线色散能谱(EDS)、红外反射光谱等表征手段,探讨了多孔氧化铝薄膜的发光机制,并对经过不同退火条件得到的多孔氧化铝薄膜的光致发光特性的改变做出了合理的解释。     

Optical properties of alumina membranes prepared by anodic oxidation process

The luminescence property of anodic alumina membranes (AAMs) with ordered nanopore arrays prepared by electrochemically anodizing aluminum in oxalic acid solutions have been investigated. Photoluminescence emission (PL) measurement shows that a blue PL band occurs in the wavelength ranges of 300-600 nm. The PL intensity and peak position of AAMs depend markedly on the excitation wavelength. A new peak located at 518 nm can be observed under a monitoring wavelength at 429 nm in the photoluminescence excitation (PLE) spectra. Convincing evidences have been presented that the PLE would be associated with the residual aluminum ions in the membrane. The PLE and PL of AAMs, as a function of anodizing times, have been discussed. It is found that the oxalic impurities incorporated in the AAMs would have important influences on the optical properties of AAMs in the initial stage of anodization. The PL and PLE spectra obtained show that there are three optical centers, of which the first is originated from the F⁺ centers in AAMs, the second is correlated with the oxalic impurities incorporated in the AAMs, and the third is associated with the excess aluminum ions in the membrane.     

On the origin of light emission from porous anodic alumina formed in sulfuric acid

We have investigated the photoluminescence (PL) property of porous anodic alumina membranes (PAAMs) formed on bulk Al foils in 0.3 M sulfuric acid. Different from that from the PAAMs formed in oxalic acid, the obtained PL spectra show two emission bands which have different origins. One centered at ∼465 nm (α-band) weakens its intensity in the PAAM annealed in O₂ and is thus attributed to optical transition in oxygen vacancies. The other in the blue (β-band) redshifts with increasing excitation wavelength. On the basis of spectral examinations and analyses, we ascribe the β-band to radiative recombination of carriers in the isolated hydroxyl groups at the surface of the pore wall, whereas the photogeneration of carriers takes place in oxygen vacancies in the pore wall. This work improves the understanding of the light-emitting property of the PAAMs formed in sulfuric and oxalic acid.     

The effect of annealing on the photoluminescent and optical properties of porous anodic alumina films formed in sulfamic acid

Photoluminescent and optical properties of porous oxide films formed by two-step aluminum anodization at a constant potential of 30 V in sulfamic acid have been investigated after their annealing, ranging from room temperature up to 600 °C. X-ray diffraction reveals the amorphous nature of porous oxide films. Infrared and energy dispersive spectroscopy indicates the presence of sulfuric species incorporated in oxide films during the anodization. Photoluminescence (PL) measurements show PL bands in the range from 320 to 600 nm. There are two peaks in emission and excitation spectra. One emission peak is at constant wavelength centered at 460 nm and the other shifts from 390 to 475 nm, depending on excitation wavelength. For excitation spectra, one spectral peak is at constant wavelength at 270 nm and the other also shifts to longer wavelengths while increasing emission wavelength. Upon annealing of the as-prepared oxide films PL increases reaching maximum value at about 300 °C and then decreases. The results indicate the existence of two PL centers, one placed at surface of the pore wall, while the other positioned inside the oxide films.     

The investigation of photoluminescence centers in porous alumina membranes

To investigate the origin of blue photoluminescence (PL) in porous alumina membrane, we have prepared an anodic aluminum oxide film with a pore diameter of 40 nm in oxalic acid solution by a two-step anodization process. Our results show that the as-prepared alumina membrane is amorphous and exhibits a broad emission band peaking at around 452 nm with two sub-peaks located at 443 nm and 470 nm. As indicated by the PL excitation spectra, there are two excitation peaks which can account for the sub-peaks observed in the PL emission band. We have proposed that the broad emission band with two sub-peaks can be attributed to two luminescence centers in porous alumina membranes, namely, oxygen defects and oxalic impurities. Furthermore, we have rationalized that the two emission centers show similar influence on the PL band in the blue region based on a simple model. PACS 81.07.-b; 81.16.Dn; 79.60.Jv     

Influence of argon ambience on the structural,morphological and optical properties of pulsed laser ablated zinc sulfide thin films

Nanostructured zinc suplhide thin films are successfully deposited on quartz substrates using pulsed laser deposition (PLD) under different argon pressures (0, 5, 10, 15 and 20 Pa). The influence of argon ambience on the microstructural, optical and luminescence properties of zinc sulfide (ZnS) thin films is systematically investigated. The GIXRD data suggests rhombohedral structure for ZnS films prepared under different argon ambience. Self-assembly of grains into well-defined patterns along the y direction is observed in the AFM image of the film deposited under argon pressure 20 Pa. All the films show a blue shift in optical band gap. This can be due to the quantum confinement effect and less widening of conduction and valence band for the films with less thickness and smaller grain size. The PL spectra of the different films are recorded at excitation wavelengths 250 nm and 325 nm and the spectra are interpreted. The PL spectra of the films recorded at excitation wavelength 325 nm show intense yellow emission. The film deposited under an argon pressure of 15 Pa shows the highest PL intensity for excitation wavelength 325 nm. For the PL spectra (excitation at 250 nm), the highest PL intensity is observed for the film prepared under argon free ambience. In our study, 15 Pa is the optimum argon pressure for better crystallinity and intense yellow emission when excited at 325 nm.