低速~(84)Kr~(15+,17+)离子轰击GaAs单晶

用345 keV的Kr15+和340 keV的Kr17+离子以45fi角入射n型GaAs单晶(100)面,测量了表面形貌的变化和发射的375—500 nm Ga I和Kr II的特征光谱线.Krq+(q=15,17)离子轰击后表面形貌的变化主要取决于入射离子的电荷态q.离子沉积到靶表面的能量引起Ga原子激发,其辐射光谱为Ga I 403.2 nm和Ga I 417.0 nm.入射离子中性化过程中俘获GaAs导带电子形成高激发态原子,通过级联退激填充3p,4d等空穴,P壳层电子跃迁发射谱线为Kr II 410.0 nm,Kr II 430.4 nm,Kr II 434.0 nm和Kr II 486.0 nm,Kr II486.0 nm为较强谱线.实验结果表明,入射离子与GaAs单晶相互作用发射的可见光产额与入射离子的电荷态密切相关,较高电荷态Kr17+离子入射产生的光辐射产额大约为Kr15+离子的两倍.     

垂直腔面发射激光器的结构生长及特性研究

在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器（VCSEL）外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配.     

GaAs/Ge的MOCVD生长研究

用常压MOCVD在Ge衬底上外延生长了GaAs单晶层,研究了GaAs和6e的极性与非极性材料异质外延生长,获得了质量优良的GaAs/Ge外延片,GaAs外延层X射线双晶衍射回摆曲线半高宽达16弧秒.10K下PL谱半峰宽为7meV.讨论了极性与非极性外延的界面反相畴问题和GaAs-Ge界面的Ga、Ge原子互扩散问题.     

X射线荧光全息术中入射能量对原子像的影响

X射线荧光全息术是一种新型的显微成像技术，它能在原子水平上直接观察到晶体内部的三维结构。然而它所得到的原子像存在明显的孪生像现象。因此，采用多重能量的全息记录来消除孪生像。分别以单个和多个铁原子为模型，数值模拟了它们在4π立体角范围内、不同范围的入射能量的情况下记录的全息图。比较由这些全息图重构得到的原子像，发现入射能量范围越宽，其消除孪生像的效果越好，而且随着入射能量的提高，其原子像的分辨力也越高。     

电子在线极化相对论强度驻波场中的散射研究

研究了线极化相对论激光驻波场中的电子运动,分析了偏振面内入射的电子在激光驻波场中的散射与电子初始位置、能量以及激光强度的关系.结果表明,电子在驻波场中的散射情况与电子对激光的相对能量γ₀/a₀密切相关.对于同样的激光强度,电子初始能量存在一个能够发生前向或背向散射的临界值.光强越大,电子发生前向散射的初始能量临界值越大.用电子相对能量来衡量,这个临界值大约在1.0一1.25范围内.当相对能量超过该值,电子运动会从背向变为前向散射.电子在驻波场中的振荡中心和有质动力逆转效应的存在也是有条件的,二者只有电子相对能量γ₀/a₀在一定取值范围内才可能存在.相对能量越小,电子能发生前向散射的入射驻波面越小,而低能电子更倾向于从波节透过.在偏振面内入射的电子在高强度驻波场中会发生非弹性散射,电子与场会发生高能量交换.     

X射线荧光层析成像中消除散射光的方法

介绍了X射线荧光层析成像技术的成像原理及其在微量分析领域中的应用。针对X射线与物质相互作用时，不仅产生荧光，而且会产生各种散射光，为消除这些散射光对成像结果的影响，提出采用在与入射X射线垂直方向放置一个圆环状的晶体单色器，即双聚焦模式晶体单色器，使荧光与各种散射光分离，并聚焦在探测器上。这样不仅大大增强了荧光信号的强度，而且可使荧光探测器小型化。     

ZnO:Ga晶体对硬X射线的时间及能量响应

 介绍了ZnO:Ga晶体对重复频率快脉冲硬X 射线的时间响应，利用X射线荧光分析仪测量了ZnO:Ga晶体对10～100 keV硬X射线的能量响应。结果表明:ZnO:Ga晶体对硬X射线响应的上升时间为316 ps,半高宽为440 ps;对40 keV以上的X射线的能量响应很平坦。该晶体可以作为一种新颖的硬X射线探测元件。     

掠出射X射线荧光谱仪性能评测

通过对GaAs(100)抛光晶片在相同条件下掠出射X射线荧光实验的可重复性研究,并结合常规光源与同步辐射光源X射线掠出射荧光实验结果的对比,证明自行研制的掠出射X射线荧光平台可重复性较好,稳定性较高,实验方法的设计是合理的。理论计算与实验曲线符合的较好,证明掠出射X射线荧光实验中用单晶的全反射临界角标定掠出射角度的方法是可行的。用标准晶片掠出射X射线荧光曲线的微分评测了实际角发散度的大小。     

X射线荧光光谱检测多层薄膜样品的增强效应研究

研究了X射线荧光光谱检测多层薄膜样品的增强效应.根据多层膜中的X荧光强度理论计算公式编写了计算机程序,并计算了Zn/Fe和Fe/Zn双层膜样品中不同薄膜厚度时Fe Kα的一次荧光强度、二次荧光强度、二次荧光与一次荧光强度比以及二次荧光在总荧光强度中比例.研究发现,在多层膜样品的X射线荧光分析中,激发条件不变的情况下,元素谱线的一次荧光相对强度、二次荧光相对强度和二次荧光在总荧光强度中所占比例都随薄膜厚度及位置的变化而变化.当Fe和Zn层厚度相同时,随厚度的变化,对于Fe/Zn样品,Fe Kα二次荧光强度占总荧光强度最高为9%,而对于Zn/Fe样品这一比例最高可达35%.     

标定脉冲星导航探测器的荧光X射线光源

为标定X射线脉冲星导航用探测器, 设计了一种荧光X射线源, 该射线源的工作原理是 用X射线管的出射线轰击特定荧光靶材, 从而获得能量一定的荧光X射线, 并以此作为标定探测器的荧光X射线光源. 采用硅漂移半导体探测器在大气环境下测试了按上述原理搭建的荧光X射线光源的能谱分布和光子流量, 从光子流量入手推算了该荧光X射线光源用于真空系统中对探测器进行标定的可行性. 研制出了荧光X射线光源样机, 并在真空系统中对荧光X射线光源样机光子流量做了测试. 在探测距离D_x=300 cm, X射线管管流I_a=200 μA时, 所测得的荧光X射线光源光子流量可达19.57 ph/s@4.51 keV, 25.22 ph/s@5.41 keV, 33.27 ph/s@8.05 keV, 确认了所提方法的可行性, 获得了标定探测器的荧光X射线光源.     

由透射波的摇摆曲线求GaAs中Ga的反常散射因数

利用同步辐射光，在对称Ｌａｕｅ情况下，于Ｇａ的Ｋ吸收限附近，测定了ＧａＡｓ（２００）的衍射波和透射波的摇摆曲线．通过测定的透射波的摇摆曲线和Ｘ射线衍射动力学理论的相应计算结果的定量比较，求得ＧａＡｓ中的Ｇａ原子在其Ｋ吸收限附近的反常散射因数 关键词：     

Rocking Curves of X-ray Asymmetrical Laue Diffraction with Two-Dimensional Curvature of Wave Front

X-ray asymmetrical Laue diffraction in a perfect crystal with plane front surface was considered taking into account the two-dimensional curvature of a wave incident on the crystal. Using an appropriate Green function the dependences of rocking curves on deviation angles from selected exact Bragg direction were examined in the diffraction plane and in the direction perpendicular to the diffraction plane in locally plane wave approximation. The dependence of rocking curves on the degree of asymmetry of diffraction geometry was investigated. Analytical expressions for half widths of rocking curves in the diffraction plane and in the direction perpendicular to the diffraction plane are obtained. Some requirements to spatial and temporal coherence are estimated.     

晶体X射线劳厄衍射分束特性研究

本文基于X射线衍射动力学分析了劳厄晶体的分束特性,模拟了晶体吸收和入射光角发散对于透射光和衍射光摇摆曲线的影响,定量给出晶体衍射面内角调节范围和晶体加工厚度对于劳厄衍射分束比的调制.在实验中,采用分析晶体和分束晶体的消色散配置限制入射光角发散的影响,实现300μm厚Si(220)晶体面内角调节劳厄衍射分束的精确测量,并得到300μm, 400μm和500μm厚度Si晶体分束比的调节范围,实现了透射光和衍射光强度的定量调制.     

原子吸收限附近Bragg情况的衍射波和透射波的观测

在Ｇａ的Ｋ吸收限附近的强反常散射条件下，测定了ＧａＡｓ（６００）对称Ｂｒａｇｇ情况的衍射波和透射波的摇摆曲线，并将其和Ｘ射线衍射动力学理论的相应计算结果作了比较，指出了原子吸收限附近Ｂｒａｇｇ情况的透射波在研究反常散射中的应用价值 关键词：     

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

A modulated molecular beam technique, using mass spectrometric detection of desorbed species, had been applied to a study of the kinetics of Ga and As₄ interactions on {100} GaAs surfaces. Time domain mass spectrometer signals were processed using fourier transform techniques to provide information on surface lifetimes, sticking coefficients, desorption energies and reaction orders. In the temperature range 300–450 K As₄ is nondissociatively chemisorbed on Ga atoms from a weakly bound precursor state, but above 450 K there is a pairwise dissociation-recombination reaction between As₄ molecules adsorbed on adjacent Ga lattice sites. At temperatures higher than 600 K a temperature dependent Ga adatom population is formed by the desorption of As₂ from the surface. Thus above 450 K it is possible to produce GaAs from beams of the elements, but below this temperature the compound does not form.     

X-ray double phase retarders to compensate for off-axis aberration

An X-ray double phase retarder system composed of two transmission-type phase retarders is proposed and developed in order to compensate for off-axis aberration (phase-shift inhomogeneity due to angular divergence of incident X-rays). The scattering planes of the two phase retarders are set to be inclined by 45 degrees with respect to the plane of incident polarization, but the two phase retarders give Bragg reflections in opposite directions. By using this X-ray optical system, vertically polarized X-rays with a 0.99 degree of linear polarization were obtained from horizontally polarized synchrotron radiation with a horizontal beam divergence of 20 arcsec (0.1 mrad). This value is favorably compared with the value of 0.87 which was obtained using a conventional single phase retarder of identical total thickness, 627 microns. The comparison was made at the nickel K-absorption edge (8333 eV) with the condition that 47% of incident X-rays were transmitted through the two phase retarder crystals. The crystals were (100)-oriented diamond plates giving asymmetric 111 Laue reflections.     

Atomic-scale X-ray structural analysis of self-assembled monolayers on Silicon

Two related self-assembled monolayers (SAMs), 4-bromostyrene (BrSty) and 4-bromophenylacetylene (BPA), are photochemically grown from solution on to the monohydride-terminated Si(111) surface. The atomic-scale structures of the resulting SAMs are examined by X-ray standing waves (XSW), X-ray reflectivity (XRR), X-ray fluorescence, atomic-force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT). The coverage is 0.5 ML. The results show that in each case the molecule covalently bonds to a single Si T₁ site and stands up-right with a slight molecular tilt of 17^○ that leaves the Br terminal end over a neighboring T₄ site. The Br height is 8.5?Å (BrSty) and 8.6?Å (BPA) above the top surface Si atom. The combined XSW and XRR results rule-out two alternative bonding models predicted by DFT that have the root of the molecule bonded to two neighboring top Si surface atoms. Based on the XSW 111 and 333 coherent fractions, the BPA/Si(111) has a reduced vertical Br distribution width in comparison to BrSty. This greater rigidity in the molecular structure is correlated to a C=C bond at the root.     

P与GaAs(100)表面相互作用的温度效应

本文采用原位X射线光电子能谱、紫外光电子能谱、高分辨率电子能量损失谱和低能电子衍射技术,研究了温度对P与GaAs(100)表面相互作用的影响。结果表明,经退火后,室温下淀积于GaAs表面的非晶P大部分脱附,仅剩下少量无规分布于表面的P集团。集团中部分P与衬底Ga原子成键,另一部分P则以单质形式存在,继续提高温度退火,将使P集团中的P全部与衬底发生反应生成GaAsP薄层。在高温GaAs衬底上淀积P,将得到GaAsP固溶体薄层。这一薄层有望成为GaAs表面理想的钝化膜。 关键词：     

Determination of the K adsorption site on Fe(1 1 0) with XSW

We have used X-ray standing waves (XSW) in near normal incidence to determine the K–Fe bond length and the adsorption site of K at the saturation coverage at room temperature on the Fe(1 1 0) surface. Three different scattering geometries were used to enable the determination of the adsorption site by triangulation. From the results we conclude that the potassium atoms adsorb in a distorted hexagonal overlayer. The Fe–K distance, as determined from the measurements in the (2 2 0) Bragg reflection, is 3.4±0.2 Å. The long bridge site seems to be the preferred adsorption site for the potassium atoms in the distorted hexagonal overlayer. This geometry not only fits all the XSW data, but also explains all spots in the LEED pattern without the need to introduce multiple scattering. Comparison of the measured and simulated XSW data, based on the distorted hexagonal overlayer, enables a more accurate determination of the Fe–K bond length to 3.36±0.14 Å. This corresponds to a potassium hard sphere radius of r_K=2.12±0.14 Å. This radius is among the largest reported for potassium on a metal, which is attributed to the high coverage and coordination of the K atoms in this overlayer arrangement.     

Borman effect in resonant diffraction of X-rays

A dynamic theory of resonant diffraction (occurring when the energy of incident radiation is close to the energy of the absorption edge of an element in the composition of a given substance) of synchronous X-rays is developed in the two-wave approximation in the coplanar Laue geometry for large grazing angles in perfect crystals. A sharp decrease in the absorption coefficient in the substance with simultaneously satisfied diffraction conditions (Borman effect) is demonstrated, and the theoretical and first experimental results are compared. The calculations reveal the possibility of applying this approach in analyzing the quadrupole-quadrupole contribution to the absorption coefficient.