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1.
在以电化学方法确认L半胱氨酸对铜锌超氧化物歧化酶(copper,zincsuperoxidedismutase,SOD)在金丝电极上的电子迁移过程起促进作用的基础上,本文论述了将拉曼光谱电化学方法应用于猪红细胞SOD在经L半胱氨酸修饰的金丝电极上的电化学行为的现场拉曼光谱研究。研究结果从分子水平上提供了有关L半胱氨酸修饰在金电极上的电化学过程中,以及SOD在L半胱氨酸修饰的金电极上发生电子迁移过程中,存在于SOD、L半胱氨酸与金电极之间的相互成键作用情况随电化学过程进行而发生变化的微观结构信息,并进行了必要的分析和探讨。  相似文献   

2.
本文通过半胱氨酸分子诱导金纳米棒自组装形成一维线性链状结构,利用停留装置观察了不同手性的半胱氨酸分子(L/D-半胱氨酸)诱导金纳米棒自组装的动力学过程.通过调控CTAB浓度,首次发现在组装速率很快的情况下,L-半胱氨酸分子诱导金纳米棒自组装的组装速率慢于D-半胱氨酸分子.而在组装速率较慢的情况下,这种情况不存在.通过分析揭示了为什么在慢速动力学和快速动力学会出现这种差异.并对在快速动力学下不同手性分子在诱导纳米颗粒组装上不同动力学行为作出讨论.这一工作可能为进一步解释生命的单一手性现象提供线索.  相似文献   

3.
重离子束辐照育种研究进展及发展趋势   总被引:7,自引:1,他引:6  
相对于低能离子束生物学, 中能重离子束对植物的诱变效应介绍较少。 从机理上综述了中能重离子束辐照诱变技术的优点, 简要介绍了粮食作物、 经济作物及模式植物的重离子束辐照育种的现状, 最后从转基因、 分子辅助标记及航天育种等方面对重离子束辐照育种的发展趋势进行了展望。 In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented.  相似文献   

4.
核物理与工农业发展   总被引:1,自引:0,他引:1  
郑涛 《物理》2012,41(5):309-315
核物理应用主要包括核分析技术、同位素技术和离子束技术的应用,这些应用在工农业生产中发挥着巨大作用.离子束、电子束和同位素辐射源被广泛应用于辐照探伤、辐照加工、辐照消毒、辐照育种、辐照杀虫、辐照保藏等方面.核物理应用新技术将成为人类生活中重要的组成部分,正确认识核辐射并掌握基本的辐射防护知识具有重要意义.文章介绍了核物理在工业和农业中的应用及其社会效益和经济效益.  相似文献   

5.
摘要:本文通过半胱氨酸分子诱导金纳米棒自组装形成一维线性链状结构,利用停留装置观察了不同手性的半胱氨酸分子(L/D-半胱氨酸)诱导金纳米棒自组装的动力学过程。通过调控CTAB浓度,首次发现在组装速率很快的情况下,L-半胱氨酸分子诱导金纳米棒自组装的组装速率慢于D-半胱氨酸分子。而在组装速率较慢的情况下,这种情况不存在。通过分析揭示了为什么在慢速动力学和快速动力学会出现这种差异。并对在快速动力学下不同手性分子在诱导纳米颗粒组装上不同动力学行为作出讨论。这一工作可能为进一步解释生命的单一手性现象提供线索。  相似文献   

6.
用双离子束镀膜方法在W基底表面制备不同厚度的Cr薄膜. 用冷场扫描电镜能谱分析仪对镀膜样品成分深度分布进行分析, 使用重离子加速器对镀膜样品进行高能、低束流的氢或氘辐照, 用扫描电镜对样品表面形貌变化进行分析, 运用粒子注入射程模拟软件SRIM对氢粒子在Cr/W双层块体中的射程进行模拟分析. 实验结果表明, 运用双离子束镀膜法能够在膜与基底的接触面区域制得Cr/W混合过渡层; 在高能、低束流的氢或氘辐照下, Cr/W混合过渡层易于使气体滞留而起泡, 双离子束制备的Cr膜层不易聚集氢或氘气体成泡.  相似文献   

7.
低能氮离子注入固态羧酸钠的光谱分析   总被引:4,自引:0,他引:4  
对25keV N^+离子束辐照羧酸钠引起其分子结构的变化进行了研究,通过紫外光谱的分析,得到了离子注入后苯甲酸钠的残存剂量效应曲线,辐照后乙酸钠样品产生了新的具有紫外吸收的物质。傅里叶红外光谱分析证明,两种羧酸钠样品辐照后的产物中含有新的化学基团氰基。  相似文献   

8.
利用兰州重离子研究装置(HIRFL)的碳离子束辐照油葵干种子,统计出苗率、存活率、花粉活力、柱头可授性和不同授粉条件下的结实率,研究碳离子束辐照对油葵当代结实特性的影响。结果表明,出苗率、存活率、花粉活力、结实率随着辐照剂量增加而降低;与对照相比,80 Gy辐照后出苗率下降55.68%、存活率下降64.66%;20~160 Gy辐照显著降低了自交结实率,40~160 Gy辐照显著降低了混交结实率;花粉活力由对照组的92.01%降低为160 Gy的47.59%;随着辐照剂量的增加,具有较强可授性柱头的百分比逐渐降低,具有较弱可授性柱头和不具可授性柱头的百分比逐渐增加。研究表明,碳离子束辐照对油葵当代的损伤作用,影响了花器官的育性,降低了结实率;根据存活率的半致死剂量,结合混交结实率的半不育剂量,确定油葵适宜辐照剂量范围55~153 Gy,为碳离子束辐照油葵育种选择适宜辐照剂量提供了参考。  相似文献   

9.
强脉冲离子束作为一种闪光热源在材料表面改性方面具有广泛的应用.烧蚀效应对于强脉冲离子束与物质相互作用以及强脉冲离子束薄膜沉积过程具有重要的影响.因此,分析强脉冲离子束的烧蚀过程和机理对于优化其应用具有重要意义.为了研究强脉冲离子束的烧蚀产物特性,采用1.2—1.5 J/cm~2的强脉冲离子束辐照纯锌靶材,并使用单晶硅片收集辐照过程中产生的烧蚀产物.通过扫描电子显微镜、能谱仪和高精度天平的分析与测量,得到了烧蚀产物的表面形貌和相关特性等实验结果.结合实验和有限元模拟计算得到的材料表面温度场分布演化结果,可以证明在强脉冲离子束辐照锌靶材的烧蚀过程中会有气态、液态和固态三种不同状态的烧蚀产物产生.  相似文献   

10.
紫外光辐照镍系聚丁二烯的NMR研究   总被引:1,自引:0,他引:1  
马燕  孙万赋  王强  赵新 《波谱学杂志》2009,26(2):255-263
1H NMR谱,13C NMR谱,二维谱,X-射线衍射等方法研究了镍系高顺式聚丁二烯橡胶(NiBR) 在强紫外(UV)光辐照前后的微观结构变化和分子运动情况. 分析表明NiBR样品随着UV光辐照时间的增加,侧链乙烯基端基双键比主链端基双键更易发生氧化反应;并且随着NiBR样品的各基团的半峰宽值逐渐增加,表明NiBR在UV辐照过程中发生了部分交联反应. 样品的X-射线衍射谱图中结晶峰强度随UV光辐照时间的增加逐渐降低,表明样品的晶形无序程度增加了. 自旋-晶格弛豫时间(T1)和自旋-自旋弛豫时间(T2)值给出了有关NiBR辐照前后分子运动变化的信息.   相似文献   

11.
Surface free energy of biocompatible polymers is important factor which affects the surface properties such as wetting, adhesion and biocompatibility. In the present work, the change in the surface free energy of ultra-high molecular weight polyethylene (UHMWPE) samples, which is produced by electron beam and gamma ray irradiation were, investigated. Mechanism of the changes in surface free energy induced by irradiations of doses ranging from 25 to 500 kGy was studied. FTIR technique was applied for sample analysis. Contact angle measurements showed that wettability and surface free energy of samples have increased with increasing the irradiation dose, where the values of droplet contact angle of the samples decrease gradually with increasing the radiation dose. The increase in the wettability and surface free energy of the irradiated samples are attributed to formation of hydrophilic groups on the polymer surface by the oxidation, which apparently occurs by exposure of irradiated samples to the air.  相似文献   

12.
用高能(500MeV)Ne离子束对GaAs和InP进行了辐照,用MonteCarlo模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性.结果表明,在未辐照的样品中存在单空位,经辐照后,可在样品中产生单空位;当剂量较大时,还会形成双空位甚至尺寸较大的空洞.红外光谱测量发现,在辐照后的GaAs样品中有非晶区形成.此外,辐照在样品中还产生了反位缺陷GaAs和InP以及受主杂质ZnIn.对经1014ions/cm2剂量辐照的InP进行了光学实验,在辐照后的InP材料中发现了亚稳态中心. Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...  相似文献   

13.
概述了利用穆斯堡尔效应开展的固体材料快重离子辐照效应研究的部分结果 ,并对建立在兰州重离子加速器 (HIRFL)上的在束穆斯堡尔谱学研究装置及其应用作了简要的介绍.Mssbauer spectroscopy study of irradiation effects induced by swift heavy ions in solid materials were briefly presented.Amorphization phenomenon of yttrium iron garnet irradiated by 1 GeV Ar ions has been investigated. For the first time, the nearly complete amorphous state was observed. Stainless steel 316L samples were irradiated with 54 MeV C ions and phase transformation of the samples was observed. HT 9 ferrite steel was irradiated with 510 MeV C ions. Its phase...  相似文献   

14.
In order to improve the wear resistance of ultra high molecular weight polyethylene (UHMWPE), a surface modification is induced by ion implantation of different ions at 300 keV energy with doses ranging between 1014 -1017 ions/cm2. Wear measurements, in terms of weight loss, are performed with a “pin on disc” friction machine; these tests measure the wear properly of the UHMWPE against a metallic probe before and after the ion implantation treatment. Results demonstrate that in the implanted samples the wear resistance increases by about 76% with respect to the non-irradiated samples. The irradiated polymeric layer was characterized with the mass quadrupole spectrometry, Raman spectroscopy, infrared absorption analysis, scanning electron microscopy, atomic force microscopy and calorimetric analysis. The results suggest that wear decrease effect can be attributed to the ion bombardment inducing a high carbon surface concentration and cross-linking effects in the irradiated polymeric layer. The irradiated UHMWPE surfaces find special applications in the field of the mobile prosthesis such as hip joints.  相似文献   

15.
This paper presents the results of the influence of soft X-ray radiation on craters induced in SSNTDs by energetic α particles and protons of energy in the MeV range. We checked two detectors of the PM-355 and CR-39 types in order to verify and compare their resistance to the harsh conditions of high-temperature plasma experiments. To determine this effect some detector samples were first irradiated with α particles emitted from natural α particle sources and protons delivered by a particle accelerator. After that these samples were exposed to soft X ray radiation emitted from an X ray tube and also from the PF-1000 Plasma Focus facility. Doses during X ray irradiations varied from 0 up to tens of kGy. The irradiated samples were then etched in steps and track diameters were determined versus the absorbed dose and etching time and compared with those measured in samples not exposed to X ray radiation.  相似文献   

16.
体细胞同源重组产生的DNA重排、 缺失和复制等是基因组不稳定的重要指标, 以拟南芥菜GUS基因重组报告系R2L100和R3L66为实验材料, 以体细胞同源重组频率(每个植株上的GUS斑点数目)作为评估标准, 研究低能Ar+离子和α粒子辐射对植物基因组稳定性的影响。 结果表明: 30 keV的Ar+离子辐照拟南芥干种子, 在500×1013—3 000×1013 ions/cm2剂量范围内, 同源重组频率与对照相比明显升高, 最大值是对照的2.4倍; 3.3 MeV的α粒子辐照萌发4 d后的幼苗, 同源重组频率随着剂量的增加呈先增后降的变化趋势, 最大值是对照的1.9倍, 对应的辐照剂量是10 Gy。 以上实验结果表明, 低穿透能力的辐射能有效增加植物基因组的不稳定性。 α粒子辐照拟南芥菜幼苗的根, 未受到辐照的地上部分的同源重组频率较对照增加2.5倍, 表明低能离子诱导的基因组不稳定信号在植物个体水平是可以长程输运的。 以上结果从另一个侧面解释了低能离子的诱变机制。 The somatic homologous recombination was frequently used to evaluate genome stability because it can result in DNA changes, such as rearrangement, deletion and duplication. In this paper, we used Arabidopsis thaliana transgenic for GUS recombination substrate (R2L100 and R3L66) to study the genomic instability induced by low energy ion and α particle characteristic of short penetrating properties. The dry seeds of R3L66 line were irradiated by 30 keV Argon ion, the Homologous Recombination Frequency (HRF) had a significant increase at dose range of 500×1013—3 000×1013 ions/cm2. The highest level of HRF was 2.42 fold over the control. The 3.3 MeV α particles were used to radiate 4 day old seedlings of R2L100 line. The HRFs had a dose dependent increase at dose of 1—10 Gy, and a dose dependent decrease at 10—100 Gy. The highest level of HRF induced by α particle was 1.9 fold over control at the dose of 10 Gy. These results indicate that short penetrating irradiation can effectively trigger the plant genomic instability at the level of plant. The local irradiation on the roots of R2L100 by α particle resulted in a 2.5 fold increase of HRF in non irradiated aerial plant,which indicates that a signal of genomic instability generated by α particle radiation can systemically travel in whole plant. It is possible that the genome instability induced by low energy ion is a major part of its mutagenic mechanism.  相似文献   

17.
The cobalt ferrite nanoparticles of 20 nm size were synthesized by sol-gel auto-combustion technique. The samples were irradiated with Nd:YAG laser to understand the effects of irradiation on structural, cation distribution and magnetic properties. The virgin and irradiated samples were characterized by X-ray diffraction technique. The X-ray diffraction studies at room temperature shows that defects were created in the lattice after irradiation which causes effects on structural, cation distribution and magnetic properties. The energy dispersive analysis of X-rays (EDAX) showed the chemical composition is as per the expected stichiometry. The lattice constant observed from XRD data for virgin and irradiated samples shows increasing trend after irradiation. Cation distribution was investigated by using X-ray diffraction method. We observe decrease in magnetization of the samples after irradiation. The observed reduction in the saturation magnetization after irradiation can be understood on the basis of the partial formation of paramagnetic centers and rearrangement of cations in the lattice.  相似文献   

18.
离子注入/辐照引起Al2O3单晶的改性研究   总被引:4,自引:0,他引:4  
600K温度下用110keV的He^+,Ne^+,Ar^+离子注入及320K温度下用230MeV的^208Pb^27+辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450nm处出现了强的发光峰。且所有5×10^16ion/cm^2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100nm入射深度以内形成了高浓度的小空洞(1-2nm),在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460-510cm^-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1000—1300cm^-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。Single crystal sapphire (Al2O3 ) samples were implanted at 600 K by He, Ne and Ar ions with energy of 110 keV to doses ranging from 5 × 10^16 to 2× 10^17 ion/cm^2 or irradiated at 320 K by ^208Pb^27+ ion with energy of 1.1 MeV/u to the fluences ranging from 1 × 10^12 to 5 × 10^14 ion/cm^2. The modification of structure and optical properties induced by ion implantation or irradiation were analyzed by using photoluminescence(PL) and Fourier transformation infrared spectrum(FIR) spectra and transmission electron microscopy( TEM ) measurements. The PL measurements showed that absorption peaks located at 375,413 and 450 nm appeared in all the implanted or irradiated samples, the PL intensities reached up to the maximum for the 5 × 10^16 ion/cm^2 implanted samples. After Pb-ion irradiation, a new peak located at 390 nm formed. TEM analyses showed that small size voids,( 1--2 nm) with high density were formed in the region from the surface till to about 100 nm in depth and also large size Nebubble formed in the Ne-doped region. From the obtained FTIR spectra, it was found that Pb-ion irradiation induced broadening of the absorption band in 460-510 cm^-1 and position shift of the absorption band in 1 000- 1 300 cm^- 1 towards to high wavenumber. The possible damage mechanism in single crystal sapphire induced by energetic ion implantation or irradiation was briefly discussed.  相似文献   

19.
采用紫外–可见光吸收技术分析和研究了35MeV/uAr离子辐照聚酯膜引起的光吸收改性.结果表明,Ar离子轰击聚酯膜时引起了碳键的共轭体系形成,从而导致了紫外–可见光区域中光吸收明显增加,光吸收增加的幅度依赖于离子的照射剂量、离子在样品中的平均电子能量损失以及光的波长,剂量越高,电子能损越大,光吸收增幅越大;而光的波长越长,光吸收的增加则越不明显.利用测量到的光吸收曲线,同时还定量地研究了各种辐照条件下聚酯膜的光能隙和碳原子团的尺寸.  相似文献   

20.
王田珲  李豫东  文林  冯婕  蔡毓龙  马林东  张翔  郭旗 《发光学报》2018,39(12):1697-1704
应用于空间的图像传感器在辐射影响下产生的热像素严重影响空间光电探测性能,本文通过质子辐照试验研究了热像素的产生和变化规律。首先,使用3 MeV和10 MeV两种能量的质子对图像传感器进行辐照,分析不同能量、不同注量的质子辐照产生热像素的性质;其次,再对辐照后的器件进行退火试验,分析热像素的退火规律。对于相同注量辐照,3 MeV质子辐照下热像素产生率大约是10 MeV质子辐照下的2.3倍,但是10 MeV质子辐照产生热像素的灰度值高于3 MeV质子;辐照过程中热像素的数量都是随着注量的增加线性增加。退火过程中,热像素数量都不断减少,而3 MeV质子辐照产生的热像素相比于10 MeV质子,退火更为显著。结果表明,质子辐照下每个质子与器件之间的作用过程及产生缺陷的机制是相对独立的,不同质子的作用过程之间没有相关性。不同能量的质子辐照产生缺陷的类型不同,导致热像素具有不同特性。  相似文献   

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