非化学计量和掺杂对(Na_(1/2)Bi_(1/2))_(0.92)Ba_(0.08)TiO_3陶瓷电性能的影响

研究了非化学计量和掺杂对无铅压电陶瓷 (Na1 2 Bi1 2 ) 0 .92 Ba0 .0 8TiO3的压电性能及去极化温度的影响 .研究发现A位非化学计量可以提高陶瓷的压电性能 ;B位掺杂对材料电学性能的影响规律类似于Pb(Ti,Zr)O3系压电陶瓷的相关规律 ;由于非化学计量和掺杂会影响到A位离子对B位离子与氧离子形成的BO6 八面体的耦合作用 ,影响到畴的稳定性 ,从而影响到 (Na1 2 Bi1 2 ) 0 .92 Ba0 .0 8TiO3陶瓷的去极化温度 ;所研究的陶瓷样品的去极化温度越低 ,压电系数越高 .     

Na1/2Bi1/2TiO3体系的电子结构与极化特性

采用自洽场离散变分X_α计算方法,研究了ABO₃型钙钛矿结构无铅压电陶瓷Na_1/2Bi_1/2TiO₃体系的电子结构,分析了A,B位元素取代对Na_1/2Bi_1/2TiO₃压电陶瓷极化性能的影响.结果表明:NBT体系压电陶瓷材料存在自发极化,B位离子位移使铁电性增强,Ba,Sr与Mn离子A,B位复合取代可降低矫顽场、提高自发极化强度,从而提高材料的铁电性能,并通过实验对此结论进行了验证.     

锰掺杂对Ba(Zr,Ti)O3陶瓷压电与介电性能的影响

采用氧化物固相反应法制备了锰掺杂改性的Ba(Zr_0.06Ti_0.94)O₃陶瓷.研究了锰的掺杂量对Ba(Zr_0.06Ti_0.94)Mn_xO₃ (BZTM)陶瓷的结构、介电和压电性能的影响.实验发现,当锰含量x<0.5 mol%时进入晶格,使材料压电性能提高,损耗减小,表现出受主掺杂的特性;当锰含量x>0.5 mo 关键词： Ba(Zr 3 陶瓷')" href="#">Ti)O₃ 陶瓷 锰掺杂 介电性能 压电性能     

Cr3+:Al2O3透明多晶陶瓷光谱特性分析

对透光性良好的Cr³⁺:Al₂O₃透明多晶陶瓷的光谱性能 进行了研究，其吸收光谱中吸收峰与单晶红宝石相一致，按吸收光谱和Tanabe-Sugano能级 图，算出其晶场强度参数D_q及Racah参数B分别为1792cm^-1， 689cm ^-1，D_q/B=2.6，陶瓷中Cr³⁺离子所处格位的晶体场强 比单晶弱一些，但Cr³⁺:Al₂O₃透明陶瓷仍属于强场晶 体材料；当Cr³⁺掺杂浓度到达0.8wt%时，陶瓷的发射谱仍保持较好的R线发射 ；随Cr³⁺掺杂浓度的增大，激发峰位发生“红移”.在Cr³⁺:Al₂O₃透明多晶陶瓷的荧光谱上，发现一个波长为670nm的发射峰，经激发 谱确认为Cr³⁺的发射峰. 关键词： 氧化铝 透明陶瓷 离子格位 光谱性质     

0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3单晶/环氧树脂1-3型复合材料的压电性能研究

模拟了0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃(PMN-0.3PT)单晶1-3型压电复合材料的性能与单晶体积分数的关系,得出性能最优时压电相的体积分数为64%, 在这一体积分数下,采用切割-填充法,并使用了不同类型的环氧树脂填充制备复合材料.系统地研究了聚合物相对复合材料性能的影响,研究表明,减小聚合物相的刚度系数c和密度ρ有利于提高复合材料的性能,且聚合物相与压电相的结合强度对性能的影响非常明显,制备的PMN-0.3 PT单晶1-3型复合材料的厚度伸缩机电耦合系数k_t高达90.1%,压电系数d₃₃大于1000pC/N,机械品质因数Q_m为10.39,声阻抗Z也大大降低,性能明显优于传统的Pb(Zr_xTi_1-x)O₃(PZT)陶瓷及其1-3复合材料,在压电换能器和传感器中显示出广阔的前景. 关键词： PMN-PT单晶 压电复合材料 压电相 聚合物相     

过渡族元素掺杂BaTiO3-Tb1-xDyxFe2-y层状复合材料中的磁电效应

用溶胶-凝胶法制备1.0%mol Mn,Cr,Co掺杂 BaTiO₃(BTO)粉体,在1350℃下烧结成多晶陶瓷样品.X射线衍射和差示扫描量热分析表明,室温下掺杂BaTiO₃具有四方钙钛矿结构;居里点和相变潜热随Cr,Mn,Co掺杂逐渐降低.将掺杂BaTiO₃与Tb_1-xDy_xFe_2-y(TDF)胶合制成双层磁电复合材料,并研究了Cr:BTO-TDF,Mn∶BTO-TDF,Co:BTO-TDF层状复合材料中的磁电效应.实验表明,在340×80 A·m^-1偏置磁场下, Cr:BTO-TDF的横向磁电电压系数达到最大值586 mV·cm^-1·(80 A·m^-1)^-1.在400×80 A·m^-1偏置磁场下,Mn∶BTO-TDF和Co:BTO-TDF的横向磁电电压系数的最大值分别为480 mV·cm^-1·(80 A·m^-1)^-1和445mV·cm^-1·(80 A·m^-1)^-1.研究表明掺杂BaTiO₃-TDF层状复合材料中具有较强的磁电耦合.作为无铅压电材料,掺杂BaTiO₃制备的磁电效应器件颇具应用前景. 关键词： 磁电效应 双层复合材料 3')" href="#">掺杂BaTiO₃ 1-xDy_xFe_2-y')" href="#">Tb_1-xDy_xFe_2-y     

尖晶石铁氧体TixNi1-xFe2O4中阳离子分布和Ti离子磁矩的实验研究

采用固相反应法制备了系列样品Ti_xNi_1-xFe₂O₄ (x=0.0, 0.1, 0.2, 0.3, 0.4). 室温下的X射线衍射谱表明样品全部为(A)[B]₂O₄型单相立方尖晶石结构, 属于空间群Fd3m. 样品的晶格常数随Ti掺杂量的增加而增大. 样品在10 K温度下的比饱和磁化强度σ_S随着Ti掺杂量x的增加逐渐减小. 研究发现, 当Ti掺杂量x≥ 0.2时, 磁化强度σ随温度T的变化曲线出现两个转变温度T_L和T_N. 当温度低于T_N时, 磁化强度明显减小; 当温度达到T_N时, dσ/dT具有最大值. σ-T曲线的这些特征表明, 由于Ti掺杂在样品中出现了附加的反铁磁结构. 这说明样品中的Ti离子不是无磁性的+4价离子, 而是以+2和+3价态存在, 其离子磁矩的方向与Fe和Ni离子的磁矩方向相反. 利用本课题组提出的量子力学方势垒模型拟合样品在10 K温度下的磁矩, 得到了Ti, Fe和Ni三种阳离子在(A)位和[B]位的分布情况, 并发现在所有掺杂样品中, 80%的Ti离子以+2价态占据尖晶石结构的[B]位.     

0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3压电薄膜的摩擦、磨损性能

具有准同型相界组分的0.5Ba(Ti_0.8Zr_0.2)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ (BZT-0.5BCT)陶瓷, 表现出优异的铁电、压电性能, 作为一种具有潜在应用前景的无铅压电材料得到广泛关注. 本文采用溶胶-凝胶方法在Si(100)基底上制备了BZT-0.5BCT压电薄膜. 使用原子力显微镜和扫描电子显微镜测量得到样品的形貌图, 形貌图表明该方法制备的无铅压电薄膜表面光滑, 晶粒大小均匀、呈半球形, 直径为80–100 nm, 厚度为1.7 μm, 膜的内部有气孔.摩擦力实验表明, 压电薄膜样品与硅针尖之间存在静电力的作用, 导致其摩擦力远大于硅针尖与SiO₂之间的摩擦力, 但是两者的摩擦系数基本相同.划痕实验表明, BZT-0.5BC薄膜具有很强的法向承载能力, 但是切向抗磨损能力差, 样品的平均弹性模量为23.64 GPa± 5 GPa, 其硬度为2.7–4 GPa, 两者均略低于压电陶瓷Pb(Zr, Ti)O₃材料的体态值. 关键词： BZT-BCT薄膜 纳米摩擦力 纳米压痕 纳米划痕     

La2O3对Yb:Y2O3透明陶瓷光谱性能的影响

研究了La₂O₃对Yb：Y₂O₃透明陶瓷光谱性能的影响，添加适量La₂O₃以后，Yb：Y₂O₃透明陶瓷的吸收峰和发射峰的位置不变，但由于La³⁺的离子半径大于Y³⁺的离子半径，在Y₂O₃中引入La³⁺离子后，导致Y₂O₃晶格常数变大，晶场强度变弱，同时降低了Y₂O₃晶体的有序度，致使发射峰强度有所下降，发射截面变小.过量的La₂O₃（x=0.16）造成Yb³⁺激活离子发射强度明显下降；其荧光寿命在添加La₂O₃后总体增大45%—60%. 关键词： 氧化镧 氧化钇 透明陶瓷 光谱性能     

钙钛矿型氧离子导体KNb1-xMgxO3-δ的制备和表征

在高温高压（4.0GPa，870℃）下合成了具有正交钙钛矿结构的KNb_1-xMg_x O_3-δ（x=0.0—0.3）系列固体电解质，并系统地研究了Mg掺杂对其结构相变和导电性的影响.变温拉曼谱和DTA测量结果表明，随着温度的升高，KNb_{1-xMgxO3-δ发生了结构相变，由铁电正交、四方相转变为顺 电立方相.由于Mg掺杂削弱了B位离子对自发极化的贡献以及A位离子与BO关键词： 钙钛矿 离子电导 1-xMgxO3-δ')" href="#">KNb1-xMgxO3-δ 高温高压 铁电相变}     

Electromechanical and ferroelectric properties of (Bi1/2Na1/2)TiO3-(Bi1/2K1/2)TiO3- (Bi1/2Li1/2)TiO3-BaTiO3 lead-free piezoelectric ceramics for accelerometer application

Lead-free (0.90-x)(Bi_1/2Na_1/2)TiO₃-0.05(Bi_1/2K_1/2)TiO₃-x(Bi_1/2Li_1/2)TiO₃-0.05BaTiO₃ piezoelectric ceramics (abbreviated as BNKLBT-100x, with x ranged from 0 to 2.5 mol %) were prepared by a conventional mixed oxide method. Effects of the amount of (Bi_1/2Li_1/2)TiO₃ (BLT) on the electrical properties and crystal structure of the BNKLBT ceramics were examined. BNKLBT-1.5 ceramics have good properties with piezoelectric constant d₃₃=163 pC/N, electromechanical coupling factor k_p=0.33, k_t=0.53, relative permittivity ε_r=785 and dissipation factor cosδ=2.2% at 1 kHz. The sample has larger remnant polarization than BNKLBT-0 ceramics and the same coercive field as BNKLBT-0 ceramics. X-ray diffraction analysis shows that the incorporated BLT diffuses into the BNT–BKT–BT lattice to form a solid solution during sintering, but changes the crystal structure from rhombohedral to tetragonal symmetry at higher BLT amounts. Depolarization temperature (T_d) of the BNKLBT-100x ceramics increases from 102 °C to ∼136 °C for BNKLBT-0 to BNKLBT-2.5. BNKLBT-1.5 is used as the transduction element in compressive type accelerometer and its sensitivity is calibrated by the back-to back method. Within the ±2.5% tolerance, the lead-free accelerometer has a mean value of 2.97 pC/ms^-2 within 50 Hz–12.45 kHz and the lead-based accelerometer has a mean value of 4.34 pC/ms^-2 within 50 Hz to 8.24 kHz. PACS 77.22.Ej; 77.84.-s; 85.50.-n     

Electromechanical properties and dielectric behavior of (Bi1/2Na1/2)(1−1.5x)BixTiO3 lead-free piezoelectric ceramics

Bismuth doped bismuth sodium titanate ceramics [(Bi_1/2Na_1/2)_(1−1.5x)Bi_xTiO₃, x=0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm² and a relatively low coercive field of 71 kV/cm, while their d₃₃ and k_p reach a maximum value of 95 pC/N and 21%, respectively.     

Microstructure and piezoelectric properties of Bi0.5(Na0.82K0.18)0.5TiO3−NaSbO3 ceramics

Lead-free piezoelectric ceramics (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ have been prepared by a conventional ceramics technique, and their microstructure and electrical properties have been investigated. The addition of NaSbO₃ has no remarkable effect on the crystal structure within the studied doping content; however, an obvious change in microstructure took place. With increase in NaSbO₃ content, the temperature from a ferroelectric to antiferroelectric phase transition increases, and the temperature for a transition from antiferroelectric phases to paraelectric phases changes insignificantly. Simultaneously, the temperature range between the rhombohedral phase transition point and the Curie temperature point becomes smaller. The piezoelectric properties significantly increase with increase in NaSbO₃ content and the piezoelectric constant and electromechanical coupling factor attain maximum values of d₃₃=160 pC/N and k_p=0.333 at x=0.01. The results indicate that (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ ceramic is a promising lead-free piezoelectric candidate material.     

Structure and electrical properties of Bi0.5(Na, K)0.5TiO3−BiGaO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1 − x − y)Bi_0.5Na_0.5TiO₃−xBi_0.5K_0.5TiO₃− yBiGaO₃ have been fabricated by an ordinary sintering technique, and their structure and electrical properties and depolarization temperature have been studied. The results of X-ray diffraction reveal that Bi_0.5K_0.5TiO₃ and BiGaO₃ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure. An obvious change in microstructure with increasing concentration of Bi_0.5K_0.5TiO₃ and BiGaO₃ was observed. The piezoelectric constant d₃₃ and the electromechanical coupling factor k_p of the ceramics attain maximum values of 165 pC/N and 0.346 at y = 0.01(x = 0.18) and x = 0.21(y = 0.01), respectively. The temperature dependence of dielectric constant indicates an obvious relaxor characteristic with strong frequency dependence of dielectric constant. The depolarization temperature decreased with increasing content of BiGaO₃ and first decreases and then increases with increasing amount of Bi_0.5K_0.5TiO₃.     

Effect of bismuth deficiency on structure and electrical properties of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics

(Na_0.5Bi_x)_0.93Ba_0.07TiO₃ (x=0.500-0.492) ceramics were prepared by a citrate method, and the structure and electrical properties of the ceramics were investigated with respect to the amount of Bi deficiency. It was detected that the Bi deficiency had a considerable impact on the crystal structure and microstructure. The inspection of both the temperature dependence of the dielectric properties (free permittivity ε₃₃^T/ε₀ and dielectric loss tan δ) and the evolution of the polarization-electrical field (P-E) hysteresis loops with measuring temperature suggests that the Bi deficiency served to increase the depolarization temperature (T_d). The Bi deficiency led to an increase in the coercive field (E_c) and mechanical quality factor (Q_m) together with a decrease in the remanent polarization (P_r) and piezoelectric constants (d₃₃). The variation of the structure and electrical properties with Bi deficiency amount was qualitatively interpreted in terms of the formation of Bi and oxygen vacancies in the Bi-deficient specimens. This research indicates the importance of adequately controlling Bi stoichiometry of (Na_0.5Bi_0.5)_0.93Ba_0.07TiO₃ ceramics in obtaining the desired ferroelectric and piezoelectric properties.     

Effects of (LiCe) co-substitution on the structural and electrical properties of CaBi2Nb2O9 ceramics

The piezoelectric, dielectric, and ferroelectric properties of the (LiCe) co-substituted calcium bismuth niobate (CaBi₂Nb₂O₉, CBNO) are investigated. The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tanδ decreased. This makes poling using (LiCe) co-substitution easier. The ceramics (where □ represents A-site Ca²⁺ vacancies, possess a pure layered structure phase and no other phases can be found. The Ca_0.88(LiCe)_0.04□_0.04Bi₂Nb₂O₉ ceramics possess optimal piezoelectric properties, with piezoelectric coefficient (d₃₃) and Curie temperature (T_C) found to be 13.3 pC/N and 960 ℃, respectively. The dielectric and piezoelectric properties of the (LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours. This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.     

TiO2-nonstoichiometry dependence on piezoelectric properties and depolarization temperature of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06Ti_xO_1+2x lead-free piezoceramics with x varying from 0.97 to 1.03 were fabricated and characterized in order to investigate the effects of TiO₂-nonstoichiometry on the piezoelectric properties and depolarization temperature of (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition. X-ray diffraction (XRD) analysis showed that all samples have a single phase of perovskite structure with rhombohedral symmetry. Piezoelectric and dielectric measurements revealed that deficiency of TiO₂ leads to an increase in the piezoelectric coefficient (d₃₃), free relative permittivity (), and loss tangent (tan δ) besides an increase in the electromechanical coupling coefficient (k_p) within a certain amount, while excess of TiO₂ results in a decrease in k_p, d₃₃, and , but an increase in tan δ. Depolarization temperature (T_d) measurement indicated a decrease and an increase in T_d as a result of increasing TiO₂ deficiency and TiO₂ excess, respectively. This TiO₂-nonstoichiometry also induced changes in the remanent polarization (P_r) and coercive field (E_c) of the ceramics.     

Structure, ferroelectric and piezoelectric properties of (Bi1−x−yNa0.925−x−yLi0.075)0.5BaxSryTiO3 lead-free piezoelectric ceramics

Lead-free multi-component ceramics (Bi_1−x−yNa_{0.925−x−y}Li_0.075)_0.5Ba_xSr_yTiO₃ have been prepared by an ordinary sintering technique and their structure and electrical properties have been studied. All the ceramics can be well-sintered at 1100 °C. X-ray diffraction patterns shows that Li⁺, Ba²⁺ and Sr²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) is formed at 0.04 < x < 0.08. As compared to pure Bi_0.5Na_0.5TiO₃ ceramic, the coercive field E_C of the ceramics decreases greatly and the remanent polarization P_r of the ceramics increases significantly after the formation of the multi-component solid solution. Due to the MPB, lower E_C and higher P_r, the piezoelectricity of the ceramics is greatly improved. For the ceramics with the compositions near the MPB (x = 0.04–0.08 and y = 0.02–0.04), piezoelectric coefficient d₃₃ = 133–193 pC/N and planar electromechanical coupling factor k_P = 16.2–32.1%. The depolarization temperature T_d reaches a minimum value near the MPB. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both the polar and non-polar regions at temperatures near/above T_d.     

Effect of excess Bi2O3 on the electrical properties and microstructure of (Bi1/2Na1/2)TiO3 ceramics

(Bi_1/2Na_1/2)TiO₃ ceramics (BNT) with 0–6 mol% of excess Bi₂O₃ are prepared by conventional solid-state sintering. The electrical properties of the samples are examined. The addition of excess Bi₂O₃ reduces the leakage current of BNT ceramics significantly, thus facilitating the poling process, and improves their piezoelectric properties slightly for certain amounts of added Bi₂O₃. BNT ceramics have very high dielectric constants and dissipation factors at low frequency and high temperature due to their high conductivity. Adding excess Bi₂O₃ to BNT ceramics affects their dielectric behavior and phase transition temperatures. Grain growth is suppressed by adding Bi₂O₃ and no second phase is observed for BNT ceramics with up to 6 mol% of excess Bi₂O₃ added.