ZnO/Diamond/Si结构中声表面波传播特性分析

基于递归刚度矩阵方法, 建立了多层结构声表面波表面有效介电常数模型, 计算出了ZnO/Si结构声表面波的相速度频散特性, 与实验结果符合较好, 表明本文所建模型的准确性和有效性. 进一步计算得到了三层结构(ZnO/Diamond/Si)声表面波的相速度和机电耦合系数的频散规律, 获得此结构最优的高波速和高机电耦合系数组合及达到最优组合所需控制的变量, 为高频高性能声表面波器件设计和优化提供了有益参考. 关键词： 声表面波 多层结构 递归刚度矩阵 表面有效介电常数     

ZnO薄膜/金刚石在不同激励条件下声表面波特性的计算与分析

本文首先以刚度矩阵法为基础, 给出了ZnO薄膜/金刚石在四种不同激励条件下的有效介电常数计算公式. 然后以此为工具, 分别计算了多晶ZnO(002) 薄膜/多晶金刚石和单晶ZnO(002) 薄膜/多晶金刚石的声表面波特性, 并根据计算结果及设计制作声表面波器件的要求, 对ZnO膜厚的选择进行了详细地分析. 最后讨论了ZnO/金刚石/Si复合晶片可以忽略Si衬底对声表面特性影响时对金刚石膜厚的要求. 关键词： 声表面波 压电多层结构 有效介电常数 刚度矩阵法     

磁控溅射制备ZnO薄膜及其声表面波特性

通过射频磁控溅射技术在GaAs，Au/GaAs，Si和玻璃基片上成功制备了ZnO多晶薄膜，利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征，结果表明ZnO薄膜呈完全c轴取向，Au缓冲层可以有效地改善ZnO薄膜的晶体质量，X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°，同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响，通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测，利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量. 关键词： ZnO薄膜 X射线衍射 声表面波     

度量算符对Gauss编织态的本征作用及自旋几何

对圈量子引力中标架度量矩阵算符对Gauss编织态的作用为本征作用，提供了完整的证明.求得了全部标架度量矩阵算符的表示矩阵，及其期望值.利用自旋几何定理，在内腿颜色k=0和k=2两种情况下，算得了Gauss编织态顶角毗邻的4条腿(P=1)的相位位形切方向间的全部夹角，以及切矢量的长度. 关键词： 度量算符的表示矩阵 度量期望值 切方向间夹角 切矢量长度     

电压控制不连续导电模式DC-DC变换器的熵特性研究

结合DC-DC变换器非线性特性随反馈增益k变化的关系,以及熵能够反映序列总体统计特征的特点,提出一种基于熵估计DC-DC变换器非线性行为的新方法. 以一阶电压反馈不连续导电模式 DCM Buck和Boost变换器为例,详细分析了不同反馈增益k和初值x₀形成的数值序列及熵的分布情况. 研究结果表明：DC-DC变换器的熵由反馈增益k决定,与初值x₀无关,最终小于理论极大值log₂N （N为统计区间个数）;熵能够准确区分DC-DC变换器的倍周期分岔和混沌行为,从而得到一种新的可量化的DC-DC变换器非线性动力学行为指标;完善了该类变换器非线性动力学分析的理论和方法. 关键词： DC-DC变换器 熵 混沌 k')" href="#">反馈增益k     

多光子激发相干态的Wigner函数

Wigner函数的负性是非经典量子态的重要判据之一.利用Fock态表象下Wigner函数的一般表达式，重构了相干态｜z〉的k光子激发态｜+k，z〉～a^－k｜z〉（k≥1）的Wigner函数，并根据其数值结果讨论了该量子态的非经典特性（这里a^－1为Bose湮没算符的逆算符，其作用相当于Bose产生算符）.结果表明，不论k取奇数还是偶数，相干态的这些k光子激发态都具有非经典特性；而且k的取值越大，这些量子态的非经典特性越明显. 关键词： 非经典量子态 激发相干态 Wigner函数 非经典特性     

由于表面粗糙引起的激光声表面波色散的实验和理论研究

表面粗糙是材料制造过程中必有的副产物, 粗糙表面会引起其中传播的声表面波的速度发生变化. 在利用激光声表面波对材料性质进行评估时, 常用宽带的激光声表面波速度频散特性对材料性质进行反演. 为了研究表面粗糙度是否能作为反演的特征参数之一, 本文建立了激光在表面粗糙样品中激发声表面波、聚偏氟乙烯换能器宽带接收声表面波的实验装置来研究不同粗糙度表面对声表面波速度的影响; 理论上建立了激光在粗糙表面中激发声表面波的计算模型, 利用有限元法得到声表面波的时域特征, 并进一步得到声表面波的速度色散曲线, 理论结果和实验结果能很好地拟合. 这为利用激光声表面波对表面粗糙的评估提供理论和实验依据. 关键词： 表面粗糙 激光声表面波 速度色散 聚偏氟乙烯传感器 有限元法     

GaN的声表面波特性研究

采用金属有机物化学气相外延方法在(0001)面蓝宝石上生长了高质量、高阻的未掺杂(0001)面GaN薄膜。为精确测量GaN薄膜材料的声表面波特性，在GaN薄膜表面上沉积了金属叉指换能器，叉指换能器采用等叉指结构，叉指的数目为40对，叉指间距为15μm。采用脉冲法测量了声表面波在自由表面和金属表面上的速度，并通过计算得到了机电耦合系数(κ^2)。所测量的声表面波速度（ν)为5667m／s，机电耦合系数(κ^2)为1．9％。     

用于电流传感的声表面波磁致伸缩效应

利用声表面波(SAW)磁致伸缩效应可以实现一种快速、高灵敏度的电流检测方法,但磁致伸缩薄膜内部矫顽力导致了明显的磁滞误差。磁致伸缩薄膜的栅阵化设计可以减小磁致伸缩时薄膜内部矫顽力,抑制磁滞现象,从而实现高灵敏和低迟滞误差的SAW电流检测。结合有限元和耦合模理论对沉积铁钴(FeCo)薄膜栅阵的声表面波电流传感器中的磁致伸缩效应进行分析,对传感响应进行仿真,确定优化的传感结构参数。为验证理论分析,实验研制了频率为150 MHz的声表面波电流传感器件,并结合差分振荡电路及亥姆霍兹线圈,建立传感器测试系统.实验结果表明,磁致伸缩薄膜的栅阵设计大幅降低了迟滞误差,并显著提升了传感器灵敏度。      

声表面波对GaAs(110)量子阱发光特性的调制

结合声表面波和光致发光谱在低温(15K)下对非故意掺杂的GaAs(110)量子阱结构的发光特性进行了研究.实验结果表明，由于声表面波的作用GaAs(110)量子阱的发光强度减弱,并且其对应的重空穴能级出现了分裂的现象，当施加的声波强度P_rf达到20dBm时，能级分裂ΔE达到了10meV.进一步讨论了声表面波对GaAs(110)量子阱圆偏振光自旋注入的影响. 关键词： 发光 GaAs量子阱 声表面波 自旋极化     

Numerical study on surface acoustic wave method for determining Young's modulus of low-k films involved in multi-layered structures

The surface acoustic waves (SAWs) technique is becoming an attractive tool for accurately and nondestructively characterizing the mechanical property of the brittle low dielectric constant (low-k) thin film. The theoretical equations for describing SAWs propagating on the multi-layered structure are derived in this study. The dispersion features of SAWs propagating on different structures of low-k/SiO₂/Si substrate, SiO₂/low-k/Si substrate, low-k/Si substrate, and low-k/Cu/Si substrate are investigated to instruct an accurate and facile fitting process for determining Young's modulus of low-k films. The dependence of dispersion relation on the film thickness, elastic modulus of low-k materials as well as frequency are provided and discussed in detail. The study shows an obvious influence of layered structure on the dispersion relation of SAWs. For a fixed structure, the dispersion curvature increases with the decrease of Young's modulus of low-k films.     

Effects of Mn‐doping on surface acoustic wave properties of ZnO films

Surface acoustic wave (SAW) filters based on Mn‐doped ZnO films have been fabricated and effects of Mn‐doping on SAW properties are investigated. It is found that the electromechanical coupling coefficient (K²) of Zn_0.913Mn_0.087O films is 0.73 ± 0.02%, which is 73.8% larger than that of undoped ZnO films (0.42 ± 0.02%). Zn_0.913Mn_0.087O film filters also exhibit a lower absolute value of insertion loss (|IL|) of 16.1 dB and larger bandwidth (BW) of 5.9 MHz compared with that of undoped ZnO film filter. However, Zn_0.952Mn_0.048O film filters exhibit a smaller K² of 0.34 ± 0.02%, larger |IL| of 26.9 dB and smaller BW of 3.5 MHz. It is suggested that the SAW properties can be improved by appropriate Mn‐doping and Mn–ZnO/Si multilayer structure with large d₃₃ is promising for wide‐band and low‐loss SAW applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Radiation effects on the optical properties of Se85−x Te15Sb x thin films

The optical absorption of the as-deposited and γ-irradiated (doses of 3, 10, 12, 15 Mrad) thermally evaporated Se_85?x Te₁₅Sb _x (x=0, 6, 9) films was measured. The refractive index n and the extinction coefficient k of the films were calculated using an analytical method developed by Zheng et al. The Urbach relation was used in the fundamental edge region to calculate the width of the band tail states. The behavior of the composition with high concentration of antimony (x=9) was attributed to the produced Se–Sb bonds and an excess of Te–Te bonds, which break the chain structure of the Se–Te system and generate defects in the film. The related optical parameters were also calculated and discussed.     

O2掺杂对SiCOH低k薄膜结构与电学性能的影响

以十甲基环五硅氧烷(D5)和氧气(O₂)作为反应气体，采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法制备了k＝2.62的SiCOH薄膜.研究了O₂掺杂对薄膜结构与电学性能的影响.结果表明，采用O₂掺杂可以在保持较低介电常数的前提下极大地降低薄膜的漏电流，提高薄膜的绝缘性能，这与薄膜中Si-O立体鼠笼、Si-OH结构含量的提高有关. 关键词： SiCOH薄膜 2掺杂')" href="#">O₂掺杂 介电性能 键结构     

Polyimide/hollow silica sphere hybrid films with low dielectric constant

Abstract

Polyimide (PI)/hollow silica (HS) sphere hybrid films with low dielectric constant values (low-k) were synthesized via thermal imidization process using pyromellitic dianhydride (PMDA)/4,4′-oxydianiline (ODA) as the polymer matrix and HS spheres as inorganic particles with the closed air voids. The monodispersed HS spheres were synthesized via a one-step process, which means that the formation of silica shells and dissolution of the core particles (polystyrene particles) occurs in the same medium. The HS particles have uniform size of ca. 1.5 μm in diameter and ca. 100 nm in shell thickness. PI/HS sphere hybrid films synthesized using mixture of polyamic acid (PAA) and HS spheres prepared via one-pot process, which means that the production of PAA and HS spheres mixture occurs with the polymerization of PMDA and ODA in the same bottle. HS spheres of two different kinds (pristine HS spheres (PHS spheres) and amine-modified HS spheres (AHS spheres)) were used for the preparation of the hybrid films. With the varying contents of AHS spheres in the range of 1–10 wt%, the dielectric constants of the PI/AHS sphere hybrid films were reduced from 3.1 of pure PI to 1.81 by incorporating 5 wt% AHS. The dielectric constants of the PI/PHS sphere hybrid films were reduced to 1.86 by incorporating 5 wt% PHS. Organic–inorganic hybrid porous polyimides may be expected as prime candidates for polymeric insulators due to their high thermal stability, good mechanical properties, solvent resistance, and low-k.     

Interaction of CdSe/ZnS core-shell semiconductor nanocrystals in solid thin films

The optical properties of CdSe/ZnS semiconductor nanocrystals with the core-shell structure are studied upon visible-laser excitation in a wide range of flux densities. It is demonstrated that the dimensional quantization effect is preserved in the films with a limiting high concentration of nanocrystals. A strong bathochromic shift of the absorption and luminescence peaks relative to the peak positions in the corresponding spectra of nanocrystals in films with a relatively low concentration of nanocrystals and solutions is caused by a high concentration of nanocrystals and the dipole moment related to the asymmetry of the nanoparticles. The shift is varied from 35 to 50 nm depending on the film thickness. The luminescence spectra of the films remain unchanged upon an increase in the laser intensity to 1 × 10⁶ W/cm². The laser action on the nanoparticle films is studied at intensities (5 × 10⁶?1 × 10⁹ W/cm²) higher than the damage threshold.     

Preparation and characterisation of crystalline tris(acetylacetonato)Fe(III) films grown on p-Si substrate for dielectric applications

Thin tris(acetylacetonato)iron(III) films were prepared by sublimation in vacuum on glass and p-Si substrates. Then comprehensive studies of X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, AC-conductivity, and dielectric permittivity as a function of frequency and temperature have been performed. The prepared films show a polycrystalline of orthorhombic structure. The optical absorption spectrum of the film was identical with that of the bulk powder layer. For electrical measurements of the complex as insulator, sample in form of metal-insulator-semiconductor (MIS) structure was prepared and characterised by the measurement of the capacitance and AC-conductance as a function of gate voltage. From those measurements, the state density D_it at insulator/semiconductor interface and the density of the fixed charges in the complex film were determined. It was found that D_it was of order 10¹⁰ eV⁻¹/cm² and the surface charge density in the insulator film was of order 10¹⁰ cm⁻². The frequency dependence of the electrical conductivity and dielectric properties of MIS structures were studied at room temperature. It was observed that the experimental data follow the correlated barrier-hopping (CBH) model, from which the fundamental absorption edge, the cut off hopping distance, and other parameters of the model were determined. It was found that the capacitance of the complex increases as temperature increases. Generally, the present study shows that the tris(acetylacetonato)iron(III) films grown on p-Si is a promising candidate for low-k dielectric applications, it displays low-k value around 2.0.     

用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜

采用激光分子束外延技术，利用两步法，在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示， TiN薄膜材料表面光滑，在10 μm×10 μm范围内，均方根粗糙度为0842nm.霍耳效应测量结果显示，TiN薄膜在室温条件下的电阻率为36×10^-5Ω·cm，迁移率达到5830 cm²/V·S，表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明，高质量的TiN薄膜材料被外延在Si衬底 关键词： 激光分子束外延 TiN单晶薄膜 外延生长     

Smooth and oriented AlN thin films deposited by laser ablation and their application for SAW devices

Aluminum nitride films of up to 1.2 7m thickness were deposited by excimer laser ablation onto c-, r-, m-, and a-cut sapphire substrates. The films were found to be of (00.1), (11.0), (10.0) and (00.1) orientation on c-, r-, m- and a-cut sapphire substrates, respectively. XRD pole figure measurements showed good in-plane alignment of all three sample sets. AFM measurements reveal that all films were atomically smooth in the initial stages of growth. Furthermore, for AlN(11.0) on r-cut sapphire the film surface remained smooth, with an r.m.s. roughness of about 1 nm up to a film thickness of 1.2 7m. AlN films with the polar c-axis parallel to the film surface are particularly favourable for SAW device applications, since the c-axis direction yields the strongest coupling coefficient. A smooth surface, as for AlN(11.0), is essential to prevent scattering of propagating surface acoustic waves. A SAW r.f. filter was fabricated with interdigital transducers of 5.6 7m wavelength on top of a 1.2 7m AlN(11.0) film on r-cut sapphire. The resonance frequency of 1.068 GHz corresponds well to theoretical expectations for the SAW velocity in this propagation geometry.     

Molecular-weight dependence of the glass transition temperature of freely-standing poly(methyl methacrylate) films

We have used transmission ellipsometry to measure the glass transition temperature, T_g, of freely-standing films of atactic and syndiotactic poly(methyl methacrylate) (PMMA). We have prepared films with different molecular weights, MW, (159×10³ < M _w < 1.3×10⁶) and film thicknesses, h, ( 30nm < h < 200 nm). For the high-MW ( M _w > 509×10³) atactic PMMA films, we find that T_g decreases linearly with decreasing h, which is qualitatively similar to previous results obtained for high-MW freely-standing polystyrene (PS) films. However, the overall magnitude of the T_g reduction is much less (by roughly a factor of three) for the high-MW freely-standing PMMA films than for freely-standing PS films of comparable MW and h. The observed differences between the freely-standing PMMA and PS film data suggest that differences in chemical structure determine the magnitude of the T_g reduction and we discuss the possible origins of these differences. Our analysis of the MW-dependence of the T_g reductions suggests that the mechanism responsible for the MW-dependent T_g reductions observed in the high-MW freely-standing films is different than that responsible for the MW-independent T_g reductions observed in the low-MW freely-standing and supported films.