BnTi(n=1-12)团簇的结构, 电子性质和磁性

利用密度泛函理论广义梯度近似方法得到了BnTi(n=1-12)团簇的基态结构, 并讨论了电子性质和磁性质. 结果表明, n≤5 时, BnTi 基态结构呈平面或准平面, n>5 时, Ti 原子倾向于与较多的B 原子成键而呈三维结构. 由二阶能量差分得出B3Ti, B5Ti, B10Ti 为幻数团簇. Mulliken 布居分析显示BnTi 团簇中电荷由Ti 原子向近邻B 原子转移且以共价键与离子键共存; 除BTi 磁矩为5 μB 外, 其余团簇磁矩处于0-2 μB 之间; 团簇总磁矩主要由Ti 原子的3d 轨道和个别B 原子提供. B3Ti和B7Ti 团簇中, B 原子表现为反铁磁性.     

BnTi(n=1-12)团簇的结构, 电子性质和磁性

利用密度泛函理论广义梯度近似方法得到了BnTi(n=1-12)团簇的基态结构, 并讨论了电子性质和磁性质. 结果表明, n≤5 时, BnTi 基态结构呈平面或准平面, n>5 时, Ti 原子倾向于与较多的B 原子成键而呈三维结构. 由二阶能量差分得出B3Ti, B5Ti, B10Ti 为幻数团簇. Mulliken 布居分析显示BnTi 团簇中电荷由Ti 原子向近邻B 原子转移且以共价键与离子键共存; 除BTi 磁矩为5 μB 外, 其余团簇磁矩处于0-2 μB 之间; 团簇总磁矩主要由Ti 原子的3d 轨道和个别B 原子提供. B3Ti和B7Ti 团簇中, B 原子表现为反铁磁性.     

Ti_2B_n(n=1—10)团簇的结构与稳定性:基于从头算的研究

采用密度泛函理论中的B3LYP方法,结合从头算的CCSD(T)方法对Ti2B n(n=1—10)团簇的稳定性和电子性质进行了研究.发现两个Ti原子的掺杂导致B n团簇结构发生了根本性变化.随着n的增大,Ti2B n团簇结构生长非常规律.所有的最稳定结构都可看成双锥结构,并且两个Ti原子处在双锥结构的锥顶.根据二阶差分能量分析,得出Ti2B n(n=1—10)团簇的幻数是6,7和8.进一步分析了团簇的Ti原子解离能、B原子解离能以及团簇的电子亲和势和电离势.这些能量分析表明Ti2B6团簇既有良好的热力学稳定性,又有良好的动力学稳定性.应用前线轨道理论,对Ti原子与B6之间的成键进行了分析,了解其稳定性的根源.     

Cr掺杂锐钛矿型TiO_2(001)薄膜中Cr原子的直接观测（英文）

掺杂元素的成像对于理解TiO_2掺杂薄膜的光催化活性是至关重要的.然而,如何在原子尺度上表征掺杂原子与TiO_2晶格之间的相互关联性仍然是一项挑战性工作.本文利用高角环形暗场像/环形明场像扫描透射电镜(HA ADF/ABF-STEM)结合电子能量损失谱(EELS)从[100]晶向上对锐钛矿型Ti02(001)薄膜中掺杂的单个铬原子进行了直接成像.结果表明,Cr掺杂原子同时占据TiO_2晶格中的取代位和填隙位,而其可以用具有原子级分辨的电子能量损失谱元素面分布图(EELS mapping)来成像识别,但在HAADF/ABFSTEM图像中未能被看到.大部分的Cr掺杂原子更倾向于取代TiO_2晶格中的Ti原子.这些结果在原子尺度上为Cr掺杂TiO_2薄膜的掺杂构型提供了直接的证据,同时也表明电子能量损失谱元素面分布图在对掺杂材料的结构表征是个非常出色的技术.     

高电荷态离子126Xeq+与Ti固体表面作用的激发光谱

报道用 15 0keV的高电荷态离子1 2 6 Xeq + (6≤q≤ 30 )轰击Ti固体表面产生 2 0 0— 10 0 0nm波段发射光谱的实验结果 .结果显示 ,用电荷态足够高的离子作光谱激发源 ,无需很强的束流强度 (nA量级 ) ,便可激发起样品表面的原子和离子在可见光波段的特征谱线 .当入射离子剥离度q >qc≈ 2 0时 ,Ti原子及其离子的特征谱线强度突然显著增强 ;不同金属靶 ,特征谱线突然增强的qc值不同 .理论分析表明 ,这与q大于此临界值后 ,单电子转移释放能量激发靶材料传导电子气体的表面等离激元密切相关 .     

(TiZr)n(n=1～7)团簇的几何构型与性质的密度泛函研究

采用密度泛函DFT中的B3LYP方法,选择LANL2DZ基组,对(TiZr)x(n=1～7)团簇的各种可能构型进行了优化,得到了各团簇的最稳定结构,并对最稳定结构的几何结构、IR光谱、成键特性和稳定性等进行了理论分析.结果表明:(TiZr)n(n=2～7)团簇易形成笼状结构,Ti原子易于得到电子,而Zr原子易于失去电子;体系随着原子数的增多,自由度增加,IR光谱表现出宽带谱特征;定域化轨道标识函数图揭示了(TiZr)n(n=1～7)基态团簇原子间多为金属键作用,在特定结构下有共价键成分出现;随着原子数增加,(TiZr)n(n=1～7)团簇带隙减小,金属性增强;(TiZr)1和(TiZr)3团簇具有相对较高的动力学稳定性.     

(TiZr)n(n=1～7)团簇的几何构型与性质的密度泛函研究

采用密度泛函DFT中的B3LYP 方法,选择LANL2DZ基组, 对(TiZr)n(n=1～7)团簇的各种可能结构进行优化, 得到了各团簇的最稳定结构,并对最稳定结构的几何结构、IR光谱、成键特性和稳定性等进行了理论分析。结果表明: (TiZr)n(n=2～7)团簇易形成笼状结构,Ti原子易于得到电子,而Zr原子易于失去电子;体系随着原子数的增多,自由度增加,IR光谱表现出宽带谱特征;定域化轨道标识函数图揭示了(TiZr)n(n=1～7)基态团簇原子间多为金属键作用,在特定结构下有共价键成分出现;随着原子数增加,(TiZr)n(n=1～7)团簇带隙减小,金属性增强;(TiZr)1 和(TiZr)3 团簇具有相对较高的动力学稳定性。     

TiN和Ti1-xSixNy薄膜的微观结构分析

使用x射线衍射(XRD)、x射线光电子谱(XPS)、高分辨透射电子显微镜(HRTEM)和原子力显微镜(AFM)多种观测手段分析了TiN薄膜和Ti1-xSixNy纳米复合薄膜的微观结构.实验分析证明Ti1-xSixNy薄膜是由直径为3-5nm的纳米晶TiN和非晶Si3N4相构成,并且Ti1-xSixNy薄膜的表面粗糙度小于相同条件下制备的TiN薄膜,在Ti1-xSixNy薄膜体系的自由能中引入界面能的概念,在此基础上分析了体系中TiN晶粒的取向问题.     

(TiZr)n(n=1～7)团簇的几何构型与性质的密度泛函研究

采用密度泛函DFT中的B3LYP 方法,选择LANL2DZ基组, 对(TiZr)n(n=1～7)团簇的各种可能结构进行优化, 得到了各团簇的最稳定结构,并对最稳定结构的几何结构、IR光谱、成键特性和稳定性等进行了理论分析。结果表明: (TiZr)n(n=2～7)团簇易形成笼状结构,Ti原子易于得到电子,而Zr原子易于失去电子;体系随着原子数的增多,自由度增加,IR光谱表现出宽带谱特征;定域化轨道标识函数图揭示了(TiZr)n(n=1～7)基态团簇原子间多为金属键作用,在特定结构下有共价键成分出现;随着原子数增加,(TiZr)n(n=1～7)团簇带隙减小,金属性增强;(TiZr)1 和(TiZr)3 团簇具有相对较高的动力学稳定性。     

KNb_(1-x)Ti_xO_(3-δ)固溶体的合成与表征

利用高温高压法首次合成了KNb1 -xTixO3-δ(x =0～ 0 .4)系列固溶体 ,并使用X射线衍射、TG DTA、Raman谱和交流阻抗谱等对样品的结构、热稳定性和导电性进行了表征。XRD结果表明 ,随掺杂量的增加 ,晶胞体积减小 ;Ti掺杂引起了固溶体结构的转变 ,x <0 .1 5的样品为正交钙钛矿结构 ,而x≥ 0 .1 5的样品几乎为纯四方相结构。Raman谱和DTA结果显示 ,Ti掺杂使四方相区宽化 ,并且随掺杂量的增加 ,相变温度逐渐下降。阻抗谱测量表明 ,所有样品均以离子导电为主 ,其中KNb0 .85Ti0 .1 5O2 .92 5的氧离子导电率最高 ,在 80 0℃时达到 5 .6× 1 0 - 3S·cm- 1 ,在测量温度范围内 ,电导率可以拟合成两条直线 ,低温活化能小于高温活化能     

Readout of super-resolution marks with Ti thin film

Using Ti as the super-resolution reflective film to replace the Al reflective layer in conventional read-only optical disk, the recording marks with a diameter of 380 nm and a depth of 50 nm are read out in a dynamic testing device whose laser wavelength is 632.8 nm and numerical aperture of the lens is 0.40. The optimum Ti thin film thickness is 18 nm and the corresponding signal-noise-ratio is 32 dB.     

Generation of a broadband continuum by a Ti:sapphire femtosecond oscillator with a 1-GHz repetition rate

A five-element Ti:sapphire femtosecond ring oscillator emitting a broadband continuum that ranges from 560 to 1150 nm at -50 dB below the maximum with a repetition rate of 1 GHz is demonstrated. The key element is a slightly convex cavity mirror that increases the self-amplitude modulation of a short pulse inside the resonator. Flat negative intracavity group-delay dispersion is required only for the core spectral part of the pulse. We believe that the device presented will make optical frequency metrology and future optical atomic clocks simpler and more stable. Within the reported ultrabroad spectrum a distinct strong emission band near 655 nm occurs that can be extracted to a powerful femtosecond pulse source far out of the amplification of Ti:sapphire.     

New Data on the Nature of the EPR OK1 and N3 Centers in Diamond

The well-known diamond electron paramagnetic resonance (EPR) OK1 and N3 defects are discussed in the context of incorporation of heavy metal, supposedly Ti, in the double semivacancy and substitutional structures, respectively. X-ray phase analysis of inclusions of the growth medium, eclogite, in the diamonds under study shows an atypically high concentration of titanium compounds. To support proposed models, the hyperfine structure (HFS) from ¹³C in the OK1 center has been analyzed more precisely. The data obtained are consistent with attributing additional satellites around the main EPR lines to HFS from ⁴⁷Ti and ⁴⁹Ti. A double semivacancy model describes the directions of g and A tensor components of the OK1 center. The features of infrared and photoluminescence spectra related to the OK1/S1 and N3/440.3 nm centers are presented.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Generation of 0.1-TW 5-fs optical pulses at a 1-kHz repetition rate

A compact all-solid-state femtosecond Ti:sapphire oscillator?amplifier system using no grating-based pulse stretcher produces 20-fs, 1.5-mJ pulses at a 1-kHz repetition rate. The pulses are subsequently compressed in a hollow-fiber chirped-mirror compressor. The system delivers bandwidth-limited 5-fs, 0.5-mJ pulses at 780 nm in a diffraction-limited beam.     

增益开关型Ti~(3+):Al_2O_3对激光器的时间特性研究

本文报道增益开关型Ti~(3+) :Al_2O_3激光器输出脉冲的时间特性;给出激光器在宽带输出及调谐工作状态下,输出脉冲的时间特性曲线.实验中获得最小的脉宽为1.2ns.在一定的实验条件下,脉冲宽度可在5～27.5ns范围内连续变化.在调谐状态下,用一输出耦合镜得到波长可调谐范围为730～850nm.用三块棱镜作调谐器,在中心波长780nm处,最大输出能量为4.7mJ,谱线宽度为0.13nm(FWHM).     

低接触电阻率Ni/Ag/Ti/Au反射镜电极的研究

研究了Ag的厚度、退火时间、沉积温度对于Ni/Ag/Ti/Au电极的反射率及与p-GaN欧姆接触性能的影响. 利用分光光度计测量反射率, 采用圆形传输线模型计算比接触电阻率. 结果表明: 随着Ag厚度的增加, Ni/Ag/Ti/Au电极的反射率逐渐增大; 在氧气氛围中, 随着退火时间从1 min增至10 min, 300 ℃退火时, 比接触电阻率持续下降, 而对于400-600 ℃退火, 比接触电阻率先减小后增大; 在300和400 ℃氧气中进行1-10 min 的退火后, Ni/Ag/Ti/Au的反射率变化较小, 退火温度高于400 ℃时, 随着退火时间的增加, 反射率急剧下降; 在400 ℃氧气中3 min退火后, 比接触电阻率可以达到3.6×10^-3 Ω·cm². 此外, 适当提高沉积温度可以增加Ni/Ag/Ti/Au的反射率并降低比接触电阻率, 沉积温度为120 ℃条件下的Ni/Ag/Ti/Au电极在450 nm处反射率达到90.1%, 比接触电阻率为6.4×10^-3 Ω·cm². 综合考虑电学和光学性能, 在沉积温度为120 ℃下蒸镀Ni/Ag/Ti/Au (1/200/100/100 nm)并在400 ℃氧气中进行3 min退火可以得到较优化的电极. 利用此电极制作的垂直结构发光二极管在350 mA电流下的工作电压为2.95 V, 输出光功率为387.1 mW, 电光转换效率达到37.5%.     

高效全固化紫外四倍频激光器的研究

用半导体激光器抽运的调Q YLF倍频激光器抽运掺钛蓝宝石激光器，用LBO晶体在腔内产生二次谐波，再聚焦到BBO晶体上产生四次谐波深紫外激光。为了提高谐波转换效率，在腔内分别插入了单片、组合双折射滤光片和聚焦透镜，在平均功率为3.6W，波长为527nm的抽运光下得到410mW，417nm的蓝光。用长焦距的透镜聚焦二次谐波，得到34mW，208nm的紫外脉冲激光。从实验上详细研究了基频光的线宽对二次谐波效率的影响，二次谐波的线宽对四次谐波效率的影响、基频光的波长对四次谐波产生效率的影响。全面地分析了单片和组合大拆射滤光片及抽运功率对钛蓝宝石激光器基频光的脉宽、线宽等参量的影响。     

Efficient 1 GHz Ti:sapphire laser with improved broadband continuum in the infrared

We demonstrate a 1 GHz prismless femtosecond Ti:sapphire ring laser that emits 890 mW for 7.6 W of pump power over a continuum extending from 585 to 1200 nm at -20 dB below the maximum. A broadband continuum is obtained with the net cavity group delay dispersion having -50 to 100 fs2 oscillations from 700 to 900 nm. Further broadening is obtained by use of a slightly convex cavity mirror that increases self-phase modulation. Approximately 17% (75%) of the intracavity (output) power is generated in single pass through the crystal, outside the cavity bandwidth, and concentrated in the low-gain IR from 960 to 1200 nm.     

Tunable two-wavelength lasing of Ti: Al_2O_3 and its two-wave mixing in β-BaB_2O_4

A tunable Ti: sapphire laser with a symmetric two-channel dispersive resonator operated simultaneously at two wavelengths was obtained. The delay between λ_1 and λ_2 pulses did not exceed a few nanosecond. Independent tunable range of each output wavelength is 720-820nm, and the maximum wavelength difference was about 55nm. The competition and connectivity between two waves have been observed. The frequency suming and doubling of the two waves generated in BBO were also obtained.