高自旋极化氧化物材料的颗粒边界磁电阻效应

颗粒边界磁电阻是高自旋极化氧化物颗粒体系中由于颗粒边界的存在而导致显著的磁电阻效应。本文将这种磁电阻效应定义为颗粒边界磁电阻效应。这里所说的颗粒边界,包括各种自然和人工晶界、粉末颗粒表面、复合材料中的颗粒界面等多种情况;所涉及的材料包括高自旋极化氧化物多晶、压缩粉末和各种复合材料等。对颗粒边界磁电阻效应的研究,不仅有助于人们进一步理解高自旋极化氧化物磁输运性质的基本机制,并为寻求具有高磁电阻效应的新型自旋电子学器件提供理论基础。本文综述了高自旋极化氧化物颗粒边界磁电阻研究的主要背景和发展现状,介绍了该领域中主要的实验发现和理论模型,展望了未来的发展。     

逾渗驱动的高自旋极化氧化物材料磁电阻增强效应——网络效应与调控

锰氧化物具有内禀的多尺度非均匀性,这与同时活跃的多个自由度——自旋、电荷、晶格和轨道——非线性耦合,以及多种相互作用的共存密切相关。更重要的是,这种极为特殊的物理现象可能是庞磁电阻效应的微观起源——铁磁金属相在磁场作用下的逾渗而驱动的磁电阻效应。另一方面,在某组分导电逾渗阈值附近的磁电阻显著增强效应,是高自旋极化氧化物颗粒体系所具有的普遍现象之一。因此,针对各种高自旋极化氧化物的非均匀和颗粒复合体系,逾渗驱动磁电阻增强效应的研究具有重要的学术意义和应用价值,其中输运网络理论为重要的理论研究。在充分认识电磁输运微观机制的基础之上,通过调控输运网络的结构,探讨逾渗驱动磁电阻增强的必要条件,可以找出实现可控性高且幅值较大的磁电阻的新途径、新方法。本文主要基于电阻网络模型,综述高自旋极化氧化物材料中多相共存体系的磁输运性质研究的主要背景和发展现状,充分结合相关的实验结果,介绍逾渗驱动磁电阻效应增强的物理机制,以及各类电输运网络的构建,并展望未来的发展。     

逾渗驱动的高自旋极化氧化物材料磁电阻增强效应——网络效应与调控

锰氧化物具有内禀的多尺度非均匀性,这与同时活跃的多个自由度--自旋、电荷、晶格和轨道--非线性耦合,以及多种相互作用的共存密切相关.更重要的是, 这种极为特殊的物理现象可能是庞磁电阻效应的微观起源--铁磁金属相在磁场作用下的逾渗而驱动的磁电阻效应.另一方面,在某组分导电逾渗阈值附近的磁电阻显著增强效应,是高自旋极化氧化物颗粒体系所具有的普遍现象之一.因此,针对各种高自旋极化氧化物的非均匀和颗粒复合体系,逾渗驱动磁电阻增强效应的研究具有重要的学术意义和应用价值,其中输运网络理论为重要的理论研究.在充分认识电磁输运微观机制的基础之上,通过调控输运网络的结构,探讨逾渗驱动磁电阻增强的必要条件,可以找出实现可控性高且幅值较大的磁电阻的新途径、新方法.本文主要基于电阻网络模型,综述高自旋极化氧化物材料中多相共存体系的磁输运性质研究的主要背景和发展现状,充分结合相关的实验结果,介绍逾渗驱动磁电阻效应增强的物理机制,以及各类电输运网络的构建,并展望未来的发展.     

稀土锰氧化物的低场磁电阻效应

具有庞磁电阻效应的掺杂稀土锰氧化物因为其高的自旋极化率和自旋极化输运行为而表现出显著的低场磁电阻效应。这一效应在氧化物自旋电子学中有着深远的潜在应用前景。本文综述了国内外近年来在锰氧化物低场磁电阻增强这一研究领域的进展和存在的一些问题。全文分三个部分，首先概述了基于自旋极化散射和自旋极化隧穿两种输运机制的磁电阻理论；然后重点介绍掺杂稀土锰氧化物低场磁电阻增强的主要研究进展，这些进展背后的基本物理图象是通过人为引入自旋无序介质形成自旋极化散射和自旋极化隧穿，从而增强其低场磁电阻；第三部分讨论了基于掺杂稀土锰氧化物的磁性隧道结制备和输运性质。本文最后提出了锰氧化物低场磁电阻增强研究应该关注的一些物理问题。     

稀土掺杂锰氧化物庞磁电阻效应

过去十多年来,具有庞磁电阻效应的稀土掺杂锰氧化物成为了凝聚态物理研究的重要领域。锰氧化物的载流子自旋极化率高,且在居里温度附近表现出很大的磁电阻效应,因此在自旋电子学中有潜在的应用前景。另一方面,锰氧化物是典型的强关联电子体系,它对目前有关强关联体系的认识提出了很大挑战。本文综述了锰氧化物的各种性质及其物理原因。全文首先概述了锰氧化物的庞磁电阻效应及其晶格和电子结构,简单介绍了其他一些庞磁电阻材料;随后综述了锰氧化物的电荷/轨道有序相及其输运性质;在第四部分简单介绍了锰氧化物中庞磁电阻效应的机制;最后讨论了锰氧化物的一些可能的应用,如低场磁电阻效应、磁隧道结、磁p＿n结以及全钙钛矿的场效应管和自旋极化电子注入装置等。     

稀土掺杂锰氧化物庞磁电阻效应

过去十多年来，具有庞磁电阻效应的稀土掺杂锰氧化物成为了凝聚态物理研究的重要领域。锰氧化物的载流子自旋极化率高，且在居里温度附近表现出很大的磁电阻效应，因此在自旋电子学中有潜在的应用前景。另一方面，锰氧化物是典型的强关联电子体系，它对目前有关强关联体系的认识提出了很大挑战。本文综述了锰氧化物的各种性质及其物理原因。全文首先概述了锰氧化物的庞磁电阻效应及其晶格和电子结构，简单介绍了其他一些庞磁电阻材料；随后综述了锰氧化物的电荷／轨道有序相及其输运性质；在第四部分简单介绍了锰氧化物中庞磁电阻效应的机制；最后讨论了锰氧化物的一些可能的应用，如低场磁电阻效应、磁隧道结、磁p-n结以及全钙钛矿的场效应管和自旋极化电子注入装置等。     

磁电子学中的若干问题

本文综述了自旋极化输运过程中巡游电子的自旋极化、自旋相关的散射及自旋弛豫等三方面的内容；全面总结了铁磁金属的磁电阻效应（ＡＭＲ）、磁性金属多层膜和颗粒膜的巨磁电阻效应（ＧＭＲ）、氧化物铁磁体的特大磁电阻效应（ＣＭＲ）以及磁隧道结的巨大隧道电阻效应（ＴＭＲ）研究中具有代表性的实验结果及理论模型；简单介绍了新生的磁电子器件—磁电阻型随机存取存储器（ＭＲＡＭ）和全金属自旋晶体管的工作原理和工作过程。     

磁电子学中的若干问题

本文综述了自旋极化输运过程中巡游电子的自旋极化、自旋相关的散射及自旋弛豫等三方面的内容;全面总结了铁磁金属的磁电阻效应（ＡＭＲ）、磁性金属多层膜和颗粒膜的巨磁电阻效应（ＧＭＲ）、氧化物铁磁体的特大磁电阻效应（ＣＭＲ）以及磁隧道结的巨大隧道电阻效应（ＴＭＲ）研究中具有代表性的实验结果及理论模型;简单介绍了新生的磁电子器件—磁电阻型随机存取存储器（ＭＲＡＭ）和全金属自旋晶体管的工作原理和工作过程。     

自旋输运和巨磁电阻--自旋电子学的物理基础之一

介绍磁性纳米结构和锰氧化物中电子的自旋极化输运和巨磁电阻效应，它们是新近发展的自旋电子学的物理基础之一．着重讨论的是以下三方面的基本物理图像：磁多层结构的巨磁电阻，铁磁隧道结的隧穿磁电阻，掺杂锰氧化物的庞磁电阻效应．     

第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史，综述了自旋极化电子隧穿产应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展。     

Mechanism of grain-boundary magnetoresistance in Fe O films

The magnetotransport properties of magnetite films with different microstructures were investigated in order to identify prerequisites for the attainment of a large tunnelling magnetoresistance in polycrystalline samples. Epitaxial films on MgAl₂O₄, polycrystalline films on Al₂O₃ and rough MgAl₂O₄ substrates and a polycrystalline La_0.7Ca_0.3MnO₃ film on MgO were compared. Although grain boundaries induce a large high-field magnetoresistance in magnetite films, the low-field magnetoresistance characteristic for spin-polarized tunnelling was virtually absent in these samples. Two factors might be responsible for this behaviour: (1) grain boundaries in magnetite are conducting and do not form tunnelling barriers and (2) the spin-polarization near grain boundaries is suppressed due to non-stoichiometry. Received 15 April 2002 Published online 13 August 2002     

Twin-microstructure enhanced magnetoresistance in La0.67Ba0.33MnO3 oxides

The grain growth dependence of microstructure and its effects on magnetic and transport properties are studied in the polycrystalline La_0.67Ba_0.33MnO₃ oxides. It is found that a lateral growth manner along a certain direction and a concentric terrace pattern along three orthogonal axes occur in the samples sintered at 1573 and 1673 K, respectively. Lamella-like twin microstructure forms in the concentric terrace growth pattern and the magnetoresistance properties can be enhanced by the twin microstructure. It suggests that the twin-boundaries in twin-grains may possibly induce spin-dependent scattering of electrons that is field reduced, or spin-polarized tunneling of electrons that is field enhanced, thus strengthening the effect of grain boundaries.     

高Tc氧化物晶界结

高温超导氧化物的晶界形成超导Josephson弱连接，人工制作的晶界（例如双晶衬底上外延生长高Tc超导薄膜形成的晶界）是弯曲的小折线，即晶界小面化了，超导序参数d波对称性和晶界小面化对晶界结的性质有重要影响，文章综述了近几年来国际上在有关方面的研究动态，。     

Magnetoimpedance in La0.67Pb0.33MnO3 manganite prepared by sol–gel method

In the present work, manganite La_0.67Pb_0.33MnO₃ was prepared by the sol–gel method. The difference between metal–insulator transition temperature T_MI (217 K) and Curie temperature T_c (342 K) in the sol–gel nanocrystalline manganite is mainly due to the grain boundary effect. The breaking of Mn–O–Mn bonds and strong scattering at the grain boundary cumber the transport. At room temperature 300 K, impedance and resistance increase with increasing frequency of ac currents. The observed dc magnetoresistance in sol–gel La_0.67Pb_0.33MnO₃ is related to the spin-polarized inter-grain tunneling and spin-dependent scattering at grain boundaries. The sol–gel manganite shows the magnetoimpedance characteristics, which are different from those of traditional sintered manganites and metallic giant magnetoimpedance materials. For sol–gel La_0.67Pb_0.33MnO₃ at low frequencies, the impedance experiences a peak under a low longitudinal field. In contrast, at high frequencies the peak phenomenon disappears, and the impedance drops sharply with low fields, which is due to the inter-grain or grain boundary effect. The permeability also sensitively varies with an application of transverse field. The magnetoimpedance effect in sol–gel nanocrystalline manganite is influenced by both field-induced permeability change and dc magnetoresistance.     

Short-Circuit Diffusion in Ceramics

This article discusses grain boundary diffusion in ceramics. It gives a brief review of the experimental data available for ionic oxides and the problems of interpretation associated with it. The fundamental differences between grain boundary diffusion in metals and ceramics are noted. Calculations of the segregation of defects and impurities to grain boundaries are discussed together with methods of calculating diffusion coefficients in these boundaries. New results for alumina and chromia are presented. The problem of defining a grain boundary width is discussed with respect to new calculations on nickel oxide.     

Study of magnetoresistance and conductance of bicrystal grain boundary in La0.67Ba0.33MnO3 thin film

La_0.67Ba_0.33MnO₃ (LBMO) thin film is deposited on a 36.7°C SrTiO₃ bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T>175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T<175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T>175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.     

Magnetoresistivity of bismuth films in magnetic fields to 19 Tesla

The longitudinal and transverse magnetoresistance to fields of 19 Tesla and 4.2 K has been measured for bismuth films ranging in thickness from 0.01 to 2 m. We have observed a pronounced maximum in the longitudinal magnetoresistance which is thickness dependent. We compare these results with classical size effect theories for the longitudinal magnetoresistance in terms of magnetic-field-dependent electron scattering at grain and film boundaries. Measurements of the longitudinal magnetoresistance to 38 Tesla show a quenching of the classical size effect in the high field limit. This result strongly supports our analysis.Work supported by NSF grant #DMR 8113456Supported by the National Science Foundation     

具有人工晶界的Sr2FeMoO6粉末磁电阻的温度特性

利用固相反应合成了纯相的Sr2FeMoO6多晶块体，并通过机械球磨方法引入了人工晶界，研究了具有此种晶界的Sr2FeMoO6粉末磁电阻的温度特性．X射线衍射分析表明，机械球磨过程没有改变Sr2FeMoO6的晶体结构，但却在晶粒间界处引入了SrMoO4绝缘相，其量随着球磨时间的增加而增加．不同磁场下的磁电阻测量结果表明，由于一定量SrMoO4绝缘相的存在，晶粒间的绝缘隧穿势垒得到加强，更有利于自旋极化电子在晶粒间的隧穿，从而提高了Sr2FeMoO6多晶粉末的低温磁电阻值．然而随着温度的升高，磁电阻值迅速下降，表现出较强的温度依赖关系．这种现象是由于随着温度的升高，电子在晶界局域态间的非弹性跳跃逐渐增强引起的，而晶界局域态是由在晶界附近的大量缺陷构成．分析表明，晶界状态对Sr2FeMoO6多晶粉末磁电阻的温度特性有十分重要的影响．     

Study of field dependence of magnetoresistance of polycrystalline perovskite manganites

The field dependence of magnetoresistance in polycrystalline perovskite manganites is studied. It is found that there are two kinds of conduction channels. One is insulating channel, in which the spin-polarized tunneling affects the magnetotransport, the other is metallic, where the spin-dependent scattering dominates. The increase of metallic channels in the high external magnetic field, which is due to the reorientation of disorder spins at the interface, is assumed determinant to the continuous decrease of resistance. Within our theoretic model, the magnetoresistance of the systems with different grain size and different intergrain connectivity can be well explained. Our calculations agree with the experimental data well.     

Enhanced low-field-magnetoresistance and electro-magnetic behavior of La0.7Sr0.3MnO3/BaTiO3 composites

We report the structural, magentoresistance and electro-magnetic properties of ferromagnet–ferroelectric–type (1−x)La_0.7Sr_0.3MnO₃/xBaTiO₃ (with x=0.0%, 3.0%, 6.0%, 12%, 15.0% and 18.0%, in wt%) composites fabricated through a solid-state reaction method combined with a high energy milling method. The insulator–metal transition temperature shifts to a lower temperature and resistivity increases while the feromagnetic–paramagnetic transition temperature remains almost unchanged with the increase of BaTiO₃ content. Magnetoresistance of the composites at an applied magnetic field H=3 kOe is enhanced in the wide temperature ranges with the introduction of BaTiO₃, which could be explained by the enhanced spin polarized tunneling effect induced by the introduction of BaTiO₃. The low-field magnetoresistance of the composite is analyzed in the light of a phenomenological model based on the spin polarized tunneling at the grain boundaries. Furthermore, the temperature dependence of resistivity for this series has been best-fitted by using the adiabatic small polaron and variable range hopping models. These models may be used to explain effect of BTO on the electronic transport properties on high temperature paramagnetic insulating region.