MEVVA金属离子源的研制与调试

本文介绍的ＭＥＶＶＡ源采用电动推进式可更换单阴极弧放电机构和加减速三栅引出系统，耐压水平在于５０ｋＶ，平均束流大于５ｍＡ，束班约Ф１５０，束的不均匀度小于±２０％。束的分布测量表明，在中心区有约Ф４０的平顶区。我们已获得了Ａｌ，Ｔｉ，Ｃｒ，Ｆｅ，Ｎｉ，Ｃｕ，Ｙ，Ｚｒ，Ｍｏ，Ｔａ，Ｗ，Ｃ，ＬａＢ６等的离子束流及其最佳的运行条件。     

HL—1M装置托卡马克放电的进展

本文给出了ＨＬ－１Ｍ装置托卡马克放电的一些结果。在最初调试阶段，得到了ＩＰ＝３１０ｋＡ，ＶＬ≤１．２Ｖ，持续时间τＰ≥１０４０ｍｓ的等离子体。随着实验技术的改进，等离子体参数不断提高，等离子体存在时间成倍增长，密度极限也在提高。     

用于半导体加工的腔耦合—磁多极型ECR源的研究

本实验室研制出一台谐振腔耦合－多极场位形的电子回旋共振（ＥＣＲ）微波等离子体源（ＭＥＰ）。采用朗谬探针和离子能量分析器，测量了ＭＥＰ中Ａｒ等离子体的放电特性。实验结果表明，ＭＥＰ能在很宽的运行参数范围，高效率地产生具有较高密度、较低离子温度和空间电位的大面积均匀等离子体，特别适合于半导体加工应用研究。     

MPEGD光源中的工作气体Ar的光谱特性的研究

本文介绍了一种改进型的微波等离子体增强辉光放电（ＭＰＥＧＤ）光源，对这种级联光源中的工作气体Ａｒ的光谱特性进行了较详细的考察，对单纯微波等离子体放电，单纯辉光放电以及微波等离子体增强辉光放电的Ａｒ谱线进行了研究，并讨论了微波功率等的影响，认为这种微波等离子体增强辉光放电光源在中低能级跃产生的谱线有明显的增强作用。     

用于半导体加工的腔耦合－磁多极型ECR源的研究

本实验室研制出一台谐振腔耦合一多极场位形的电子回旋共振（ＥＣＲ）微波等离子体源（ＭＥＰ）。采用朗谬探针和离子能量分析器，测量了ＭＥＰ中Ａｒ等离子体的放电特性。实验结果表明．ＭＥＰ能在很宽的运行参数范围，高效率地产生具有较高密度、较低离子温度和空间电位的大面积均匀等离子体，特别适合于半导体加工应用研究。     

电热蒸发－电感耦合等离子体原子发射光谱（ETV－ICP－AES）的基体效应研究

本文研究了电热蒸发电感耦合等离子体原子发射光谱（ＥＴＶ－ＩＣＰ－ＡＥＳ）中氯化物、高氯酸等产生的干扰，并且与无火焰石墨炉原子吸收（ＧＦＡＡＳ）中这些基体的干扰作了比较，认为ＥＴＶ－ＩＣＰ－ＡＥＳ的干扰比ＧＦＡＡＳ干扰小。本文还对这两种方法中干扰的差异作了一些探讨。     

电热蒸发—电感耦合等离子体原子发射光谱（ETV—ICP—AES）的基体…

本文研究了电热蒸发电感耦合等离子体原子发射光谱（ＥＴＶ－ＩＣＰ－ＡＥＳ）中氯化物，高氯酸等产生的干扰，并且与无火焰石墨炉原子吸收（ＧＦＡＡＳ）中这些基体的干扰作了比较，认为酸等产生的干扰，并且与无火焰石墨炉原子吸收（ＧＦＡＡＳ）中这些基体的干扰作了比较，认为ＥＴＶ－ＩＣＰ－ＡＥＳ的干扰比ＧＦＡＡＳ干扰小。本文还对这两种方法中干扰的差异作了一些探讨。     

金刚石膜合成条件下的鞘层与等离子体参数分布

本文报导了在用热阴极直流放电等离子体化学气相沉积（通常也称ＥＡＣＶＤ．即电子辅助化学气相沉积）方法合成金刚石的条件下的等离子体密度、电子温度、等离子体空间电位分布及基片附近等离子体鞘结构，并讨论其对成膜的影响．     

EACVD中热阴极直流放电特性的实验研究

本文针对ＥＡＣＶＤ过程中经常出现的放电振荡和不稳定现象，比较系统地研究了ＥＡＣＶＤ中热阴极直流放电特性及其与工艺参数之间的关系，分析和讨论了放电振荡和不稳定现象发生的原因，并给出了避免和控制的途径和措施。     

脉冲金属氢化物真空弧放电等离子体发射光谱特性

利用发射光谱方法对真空弧离子源放电等离子体特性进行了诊断。同时,基于局域热力学平衡等离子体的发射光谱理论,建立了等离子体的发射光谱拟合模型,对真空弧放电等离子体光谱进行了分析。针对TiH真空弧离子源,分别对330~340nm与498~503nm范围内Ti+离子与Ti原子的发射光谱进行了对比拟合,获得了较好的符合度,解决了传统Boltzmann斜率法计算等离子体温度需要孤立的不受附近谱线干扰的线状光谱的困难。最后,利用该方法计算了真空弧离子源在不同放电条件下的等离子体发射光谱、等离子体密度与温度参数。结果表明,TiH真空弧放电等离子体温度在1eV左右,同时,放电所产生的氢原子要远远大于金属原子,并且随着真空弧离子源馈入功率的增加,TiH电极中解吸附出来的氢比蒸发出来的金属增加得更多,这有利于TiH离子源在中子发生器方面的应用。     

On the Current Intensity Limit of a Vacuum-Arc Ion Source

The maximum ion current that can be extracted as a high-energy beam from a metal-vapor vacuum-arc ion source is considered. Results are presented of measurements of the plasma ion current in the metal-vapor vacuum-arc II (MEVVA II) ion source. It is shown that this source is an efficient generator of metal ions, an intense flux of which is efficiently transported to the beam extractor. The maximum metal-ion current that is available for extraction at the extractor location is 5 percent of the arc current. The limitation to the intensity of the metal-ion beam that can be produced by this kind of ion source is found to be in the extractor design.     

Surface composition and surface energy of Teflon treated by metal plasma immersion ion implantation

Plasma immersion ion implantation using a metal vacuum vapor arc (MEVVA) or cathodic arc source was used to modify the fluorine-based polymer, Teflon. Several transition metal ions such as Co, Ni, Cu were introduced into plasma and implanted into the Teflon surface. The chemical composition of the modified surface was determined by Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS). The metals were found to be distributed several nanometers from the surface and XPS results showed the formation of metallic carbides and fluorides on the surface. Contact angle measurement results demonstrate the favorable change in the wettability from being hydrophobic to hydrophilic. Our study shows that the increase of the surface energy is due to the change of the surface interaction properties after metal plasma implantation.     

Neutralization of an ion beam from the end-Hall ion source by a plasma electron source based on a discharge in crossed E × H fields

The possibility of using a plasma electron source (PES) with a discharge in crossed E × H field for compensating the ion beam from an end-Hall ion source (EHIS) is analyzed. The PES used as a neutralizer is mounted in the immediate vicinity of the EHIS ion generation and acceleration region at 90° to the source axis. The behavior of the discharge and emission parameters of the EHIS is determined for operation with a filament neutralizer and a plasma electron source. It is found that the maximal discharge current from the ion source attains a value of 3.8 A for operation with a PES and 4 A for operation with a filament compensator. It is established that the maximal discharge current for the ion source strongly depends on the working gas flow rate for low flow rates (up to 10 ml/min) in the EHIS; for higher flow rates, the maximum discharge current in the EHIS depends only on the emissivity of the PES. Analysis of the emission parameters of EHISs with filament and plasma neutralizers shows that the ion beam current and the ion current density distribution profile are independent of the type of the electron source and the ion current density can be as high as 0.2 mA/cm² at a distance of 25 cm from the EHIS anode. The balance of currents in the ion source-electron source system is considered on the basis of analysis of operation of EHISs with various sources of electrons. It is concluded that the neutralization current required for operation of an ion source in the discharge compensation mode must be equal to or larger than the discharge current of the ion source. The use of PES for compensating the ion beam from an end-Hall ion source proved to be effective in processes of ion-assisted deposition of thin films using reactive gases like O₂ or N₂. The application of the PES technique makes it possible to increase the lifetime of the ion-assisted deposition system by an order of magnitude (the lifetime with a Ti cathode is at least 60 h and is limited by the replacement life of the deposited cathode insertion).     

Discharge and emission parameters of a plasma electron source based on a discharge in crossed E × H fields with various cathode materials

The possibility of using a plasma electron source (PES) with a discharge in crossed E × H field for compensating the ion beam from an end-Hall ion source (EHIS) is analyzed. The PES used as a neutralizer is mounted in the immediate vicinity of the EHIS ion generation and acceleration region at 90° to the source axis. The behavior of the discharge and emission parameters of the EHIS is determined for operation with a filament neutralizer and a plasma electron source. It is found that the maximal discharge current from the ion source attains a value of 3.8 A for operation with a PES and 4 A for operation with a filament compensator. It is established that the maximal discharge current for the ion source strongly depends on the working gas flow rate for low flow rates (up to 10 ml/min) in the EHIS; for higher flow rates, the maximum discharge current in the EHIS depends only on the emissivity of the PES. Analysis of the emission parameters of EHISs with filament and plasma neutralizers shows that the ion beam current and the ion current density distribution profile are independent of the type of the electron source and the ion current density can be as high as 0.2 mA/cm² at a distance of 25 cm from the EHIS anode. The balance of currents in the ion source-electron source system is considered on the basis of analysis of operation of EHISs with various sources of electrons. It is concluded that the neutralization current required for operation of an ion source in the discharge compensation mode must be equal to or larger than the discharge current of the ion source. The use of PES for compensating the ion beam from an end-Hall ion source proved to be effective in processes of ion-assisted deposition of thin films using reactive gases like O₂ or N₂. The application of the PES technique makes it possible to increase the lifetime of the ion-assisted deposition system by an order of magnitude (the lifetime with a Ti cathode is at least 60 h and is limited by the replacement life of the deposited cathode insertion).     

SiC埋层的制备及其红外吸收特性

采用metal vapor vacuum arc离子源的离子束合成方法，对单晶Si衬底注入C^＋离子，获得不同剂量下的SiC埋层．C^＋离子束的引出电压为50kV，注入的剂量为3.0×10¹⁷—1.6×10¹⁸cm^-2．通过红外吸收谱的测试和分析，表明SiC埋层的结晶程度依赖于剂量的大小．研究证实，可以在较低的平均衬底温度下（低于400℃）得到含立方相结构的SiC埋层． 关键词：     

用于真空弧等离子体放电阴极温度场测量的多光谱高温计

阴极表面温度是真空弧等离子体放电过程中一个重要参数,对真空弧等离子体的形成、电极腐蚀预测、热传导以及离子源的寿命都有重要影响。真空弧离子源的阴极具有目标小,放电过程快等特点,其温度的测量,对于时间分辨率和空间分辨率要求都很高,阴极表面温度的测量技术的欠缺,使得仅靠理论解析获得的结果难以得到验证。并且等离子体放电过程中测量仪器极易受到弧光的影响,如何避免放电过程中等离子体的辐射也是采用辐射法测量阴极表面温度要考虑的问题。这无疑给其温度场的测试研究带来困难。针对脉冲真空弧等离子体开展阴极表面温度测试实验有着重要意义,在分析了真空弧等离子体放电特性以及背景辐射特性和等离子体放电阴极测温的实际需求,本文基于高速CCD相机研制了一种新型的多光谱高温计。该高温计采用单色高速CCD相机,主要避免RGB彩色相机不能完全滤除背景辐射的弧光。为使用单色CCD相机实现多光谱辐射测温,设计了高温计的光学系统,该系统采用4孔径分光系统。将4种不同波长的滤光片嵌入到1个滤光片中。该研究设计的高温计可用于2 000~6 000 K的等离子体温度测量。并在中国工程物理研究院电子工程研究所进行现场测试,测试过程中将研制的高温计,通过外部触发形式对等离子体放电过程进行跟踪拍摄,高温计完全拍摄到等离子体放电过程。利用真空弧等离子体金属电极阴极放电的实测数据对高温计进行了验证。实验结果表明,设计的新型多光谱高温计能够用于测量真空弧等离子体放电时阴极温度场信息,测量的温度值低于放电电极的沸点温度,与等离子体放电过程中出现气化现象相符,说明高温计测的是等离子体放电阴极的温度。     

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为探究射频离子源驱动器线圈电气参数对射频放电的影响,主要进行了射频离子源等离子体激发的物理分析,并计算了射频电源的频率选择与线圈放电电流、线圈匝间电压以及放电气压之间的关系,设计了射频离子源驱动器的主要参数。研制的射频离子源驱动器装置,成功获得氢等离子体射频放电。实验结果和理论计算结果符合很好。     

Plasma Sources in Analytical Mass Spectrometry

Abstract

The recent interest in gas discharge ion sources for analytical mass spectrometry illustrates the often cyclic nature of scientific progress. The ion source capabilities of a gas discharge were discovered by Goldstein [1] in 1886 and such discharges were used by the pioneer mass spectroscopists (Thomson, Aston, and Bainbridge) as a convenient source of ions. The simplicity of design (see Fig. 1) and the high output ion currents were decisive factors in such applications. Alternative ion sources then replaced the gas discharge, to the point where the production of ions by gaseous discharge was suggested, correctly, to be of “more historical than contemporary interest” [2]. Nevertheless, new requirements and developments, as described in this paper, have once again drawn attention to the plasma ion source as having possible specialized and valuable analytical applications.     

大气压双频氦气放电等离子体特性的数值研究

用一维流体模型研究了大气压双频氦气放电等离子体的特性。数值模拟的结果表明，在单、双频放电中，随着应用电压的增加，电子密度和放电电流都增加。相对于单频放电，双频放电中低频源的耦合效应使得放电中的电流以及电子密度降低。随着低频源电压峰值的增加，电子密度降低，离子通量，电子损失能量以及电子吸收能量均降低；但电子温度和电势随着低频源电压峰值的增加而增加。在相同低频源电压下，随着高频源电压的增加离子流非线性增加。     

高压耦合高功率脉冲磁控溅射的增强放电效应

等离子体源离子注入与沉积技术作为一种可生产高结合力、高致密度涂层的真空镀膜技术,具有广阔的应用前景,尤其适用于高载荷工况下服役的功能涂层制备.该技术中金属等离子体源是关键,而现有的脉冲阴极弧源结构复杂,且由于伴随"金属液滴"而需要增加过滤装置.本文研究了另一种简单结构的金属等离子体源备选一高功率脉冲磁控溅射源(HPPMS)的放电特性,采用等离子体发射光谱仪探索了不同的耦合高压对HPPMS放电靶电流特性和等离子体特性的作用.发现耦合高压对HPPMS放电有明显的促进作用,相同靶电压下的放电强度大幅增加,相对于金属放电,耦合高压对气体放电的促进作用更加明显,但在自溅射为主的高压放电阶段对金属放电的促进作用明显增强.讨论了耦合高压对HPPMS放电的增强机制,发现耦合高压自辉光放电、耦合高压和HPPMS电压构成双向负压形成的空心阴极效应,以及耦合高压鞘层改善的双极扩散效应都对HPPMS放电的增强有明显作用.