Weak localization of Dirac fermions in HgTe quantum wells

Weak localization in a system of gapless two-dimensional Dirac fermions in HgTe quantum wells with thickness d = 6.6 nm, which corresponds to the transition from a normal to an inverted spectrum, has been investigated experimentally. A negative logarithmic correction to the conductivity of the system has been observed both at the Dirac point and in the vicinity of this point. The anomalous magnetoresistance of two-dimensional Dirac fermions is positive. This indicates that weak localization in the system of two-dimensional Dirac fermions occurs owing to localization and interaction effects in the presence of rapid spin relaxation.     

Mobility of Dirac electrons in HgTe quantum wells

The mobility of Dirac electrons (DEs) in HgTe quantum wells with the thickness close to the critical value corresponding to the transition from the direct to inverted spectrum has been studied experimentally and theoretically. The nonmonotonic dependence of this mobility on the electron density is found experimentally. The theory of DE scattering on impurities and fluctuations of the thickness of a well caused by its roughnesses is elaborated. This theory is in good agreement with experiment and explains the observed nonmonotonicity by the decrease in the ratio of the de Broglie wavelength of DEs to the characteristic size of the roughness with the increase in their concentration.     

Quantum spin Hall effect in inverted type-II semiconductors

The quantum spin Hall (QSH) state is a topologically nontrivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells and in this Letter we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. The quantum well exhibits an "inverted" phase similar to HgTe/CdTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking are essential. Remarkably, the topological quantum phase transition between the conventional insulating state and the quantum spin Hall state can be continuously tuned by the gate voltage, enabling quantitative investigation of this novel phase transition.     

Backscattering of Dirac fermions in HgTe quantum wells with a finite gap

The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high-quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access.     

Capacitance spectroscopy of a system of gapless Dirac fermions in a HgTe quantum well

Information on the density of states of two-dimensional Dirac fermions in a 6.6-nm-thick HgTe quantum well that corresponds to a transition from the direct to inverted spectrum is obtained for the first time by means of capacitance measurements. It is found that the density of states of Dirac electrons is a linear function of the Fermi energy at E _F > 30 meV with the corresponding velocity vDF = 8.2 × 10⁵ m/s. At lower energies, this dependence deviates from the linear law, indicating a strong effect of disorder, which is associated with fluctuations of a built-in charge, on the density of states of the studied system near the Dirac point. At negative energies, a sharp increase in the density of states is observed, which is associated with the tail of the density of states of valleys of heavy holes. The described behavior is in agreement with the proposed model, which includes both the features of the real spectrum of Dirac fermions and the effect of the fluctuation potential.     

Wave-vector filtering effect of electric–magnetic barrier in HgTe quantum wells

Because of helicity of electrons in HgTe quantum wells (QWs) with inverted band structure, the electrons cannot be confined by electric barriers since electrons can tunnel the barriers perfectly without backscattering in HgTe QWs. This behavior is similar to Dirac electrons in graphene. In this paper, we propose a scheme to confine carriers in HgTe QWs using an electric-magnetic barrier. We calculate the transmission of carriers in 2-dimensional HgTe QWs and find that the wave-vector filtering effect of local magnetic fields can confine the carriers. The confining effect will have potential application in nanodevices based on HgTe QWs.     

Effects of the Electron—Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure

JETP Letters - Magneto-absorption in HgTe/CdHgTe quantum wells with an inverted band structure in magnetic fields up to 30 T has been studied. It has been shown that the positions of...     

Wave-vector filtering effect of the electric-magnetic barrier in HgTe quantum wells

Because of the helicity of electrons in HgTe quantum wells(QWs) with inverted band structures,the electrons cannot be confined by electric barriers since electrons can tunnel the barriers perfectly without backscattering in the HgTe QWs.This behavior is similar to Dirac electrons in graphene.In this paper,we propose a scheme to confine carriers in HgTe QWs using an electric-magnetic barrier.We calculate the transmission of carriers in 2-dimensional HgTe QWs and find that the wave-vector filtering effect of local magnetic fields can confine the carriers.The confining effect will have a potential application in nanodevices based on HgTe QWs.     

Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T

Magnetoabsorption in far and mid IR ranges in double HgTe/CdHgTe quantum wells with inverted band structure has been studied in high magnetic fields up to 30 T. Numerous intraband and interband transitions have been revealed in the spectra and interpreted within axial 8 × 8 k·p model. Splitting of dominant magnetoabsorption lines resulting from optical transitions from hole-like zero-mode Landau level has been discovered and discussed in terms of a built-in electric field and collective phenomena.     

Cyclotron resonance of Dirac ferions in HgTe quantum wells

Cyclotron resonance of single-valley two-dimensional Dirac fermions in HgTe-based quantum wells has been experimentally investigated. The thickness of the wells is close to the critical value corresponding to the transition from the direct energy spectrum to the inverted spectrum. Under terahertz laser irradiation, transitions between the ground and first Landau levels, as well as between the first and second Landau levels, have been observed. Low magnetic fields corresponding to the cyclotron resonance, as well as the strong dependence of the position of the resonance on the electron density, indicate the Dirac character of the spectrum in these quantum wells. It has been shown that disorder plays an important role in the formation of the spectrum of two-dimensional Dirac fermions.     

Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

JETP Letters - The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at...     

Helical quantum states in HgTe quantum dots with inverted band structures

We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.     

Evidence for helical edge modes in inverted InAs/GaSb quantum wells

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence-a direct consequence of a gap opening away from the zone center.     

Weak localization in semiconductor structures with strong spin-orbit coupling

A theory of weak localization is constructed for p-type semiconductor structures with a complex Γ₈ valence band. An equation for the Cooperon is obtained and solved in the case when spin relaxation cannot be treated as a perturbation. The anomalous magnetoresistance is calculated in bulk samples as a function of the external deformation and in quantum wells as a function of the doping level. The results of the theory are represented in a form that allows direct comparison with experiment. Zh. éksp. Teor. Fiz. 113, 1429–1445 (April 1998)     

Quantum spin Hall effect in inverted InAs/GaSb quantum wells

We review the recent experimental progress towards observing quantum spin Hall effect in inverted InAs/GaSb quantum wells (QWs). Low temperature transport measurements in the hybridization gap show bulk conductivity of a non-trivial origin, while the length and width dependence of conductance in this regime show strong evidence for the existence of helical edge modes proposed by Liu et al. [Phys. Rev. Lett., 2008, 100: 236601]. Surprisingly, edge modes persist in spite of comparable bulk conduction and show only weak dependence on magnetic field. We elucidate that seeming independence of edge on bulk transport comes due to the disparity in Fermi-wave vectors between the bulk and the edge, leading to a total internal reflection of the edge modes.     

High-Order Above-Threshold Ionization of H2+ in Intense Laser Field

The nonperturbative quantum electrodynamies method proposed by Fu et al. [Phys. Rev. A 75 （2007） 063419] is employed to study the high-order above-threshold ionization （ATI） of a diatomic molecule. Based on this frequency-domain theory, the high-order ATI process can be regarded as ATI followed by laser-assisted collision, where the total transition amplitude is the coherent summation of the contributions from each ATI channel. The angular-resolved ATI spectrum, which agrees with the results by Becket et al. based on the time-domain method, is obtained by this frequency domain theory. Furthermore, it is demonstrated that the interference characteristics representing the molecular structure in the ATI spectrum originates from the recollision of the electron with two-centre ion in each ATI channel.     

Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field

A metal-insulator transition in a two-dimensional semimetal based on HgTe quantum wells is discovered. The transition is induced by a magnetic field applied parallel to the plane of the quantum well. The threshold behavior of the activation energy as a function of the magnetic-field strength and an abrupt reduction of the Hall resistance at the onset of the transition suggest that the observed effect originates from the formation of an excitonic insulator.     

Absorption and emission of far-IR radiation by hot holes in GaAs/AlGaAs quantum wells

It is found that when holes in GaAs/Al_0.5Ga_0.5As quantum wells are heated by a longitudinal electric field, the absorption in the far-IR region of the spectrum changes. The spontaneous emission spectrum in the far-IR range is measured. It is shown that the absorption and emission are due to direct intersubband transitions of holes near the peaks in the reduced density of states. The experimental data are in agreement with a theoretical calculation. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 12, 928–932 (25 June 1996)     

Explaining the Unobserved—Why Quantum Mechanics Ain’t Only About Information

A remarkable theorem by Clifton et al [Found Phys. 33(11), 1561–1591 (2003)] (CBH) characterizes quantum theory in terms of information-theoretic principles. According to Bub [Stud. Hist. Phil. Mod. Phys. 35 B, 241–266 (2004); Found. Phys. 35(4), 541–560 (2005)] the philosophical significance of the theorem is that quantum theory should be regarded as a “principle” theory about (quantum) information rather than a “constructive” theory about the dynamics of quantum systems. Here we criticize Bub’s principle approach arguing that if the mathematical formalism of quantum mechanics remains intact then there is no escape route from solving the measurement problem by constructive theories. We further propose a (Wigner-type) thought experiment that we argue demonstrates that quantum mechanics on the information-theoretic approach is incomplete.