纳米微晶结构ZnO及其紫外激光

本文介绍了近年来研制Ⅱ Ⅵ族半导体激光器的一个新的途径———ZnO的纳米微晶结构。它分为两大类别 :即六角柱形蜂巢状结构和粉末状颗粒结构。都已在近紫外波段实现了室温下光泵激发的受激发射。它将是继Ⅱ Ⅵ族硒化物和Ⅲ Ⅴ族氮化物之后的新型半导体激光器材料。     

纳米结构ZnO晶体薄膜室温紫外激光发射

文章综述了纳米结构的氧化锌半导体薄膜在室温下自由激子的自发辐射以及由自由激子引起的受激发射的特性，阐述了在不同激发密度下室温紫外受激发射的机理．纳米结构氧化锌半导体薄膜是用激光分子束外延(L-MBE)技术生长在蓝宝石衬底上的．薄膜由密集而规则排列的纳米尺度的六角柱组成．这些纳米六角柱起着限制激子运动的作用，激子的量子尺寸效应，使激子的跃迁振子强度大幅度增强．同时六角柱之间的晶面组成了一个天然的激光谐振腔．室温下用三倍频的YAG脉冲激光激发，可从这些纳米结构的氧化锌薄膜中观测到很强的紫外激光发射．研究发现，在中等激发密度下，紫外受激发射是由于激子与激子间碰撞而引起的辐射复合．在高密度激发条件下，由于激子趋于离化，紫外受激发射主要由电子-空穴等离子体的辐射复合引起．由于纳米结构中激子的跃迁振子增强效应，在室温下测量到的光学增益高达320cm^-1，这比在同样条件下测量到的块状氧化锌晶体的光学增益要高一个量级以上．与传统的电子-空穴等离子体激光辐射相比，激子引起的受激发射可在较低的激发密度条件下实现．这在实际应用上很有价值．     

纳米微晶材料的结构和性质

纳米微晶材料是纳米量级晶粒所构成的多晶物质,其晶界区域中存在与长程有序晶态和短程有序非晶态结构不相同的“气体状”的结构。本文讨论了纳米微晶材料的制备方法、结构特点和奇异性质及其在材料科学中的应用。     

不同烧蚀条件下飞秒激光脉冲诱导ZnO纳米结构研究

烧蚀条件对飞秒激光脉冲诱导氧化锌纳米结构有重要影响.研究了800 nm,150 fs,250 kHz的飞秒激光脉冲分别在空气中,去离子水中以及无水乙醇中垂直聚焦于氧化锌晶体表面,诱导形成不同形态的纳米结构.实验结果表明,在空气中利用飞秒激光脉冲辐照样品表面,形成了周期为180 nm的纳米线;在去离子水中辐照诱导形成了由氧化锌纳米线聚集而成的"纳米球";在无水乙醇中形成出现分叉结构的纳米线.拉曼光谱分析辐照前后晶体晶相结果表明,形成的纳米结构相对于辐照前特征峰437 cm-1强度有所下降,在570 cm-1处的峰值则显著增强.分析了在各种烧蚀条件下诱导形成纳米结构的演化过程以及物理机理.     

纳米ZnO微晶的合成及其发光特性

以醋酸锌和尿素为主要原料,利用沉淀-水热法一步合成了纳米ZnO微晶。用XRD,TEM,FTIR等测试技术及光致发光光谱(PL)对纳米ZnO微晶进行了表征,并对其发光特性进行了分析。研究表明：该合成方法操作简单,得到的纳米ZnO颗粒基本无团聚,结晶性较好,平均粒径约为17.2 nm,并在500～750 nm范围内出现宽的PL峰, 呈现出纳米材料的发光特征。     

固相热分解法合成非晶ZnO及其表征

通过固相热分解法合成了ZnO粉末,通过XPS,TEM,XRD及红外光谱分析表明,所合成的物质为非晶ZnO,其基本结构为ZnO·H2O。测量了非晶ZnO的光致发光(PL)光谱,观测到非常强的紫外发射,几乎没有可见发射,说明通过固相热分解法合成的非晶ZnO是一种非常有研究价值和研究意义的新型紫外半导体材料。     

新型半导体激光器——ZnO紫外激光器

最近人们发现在室温下ZnO薄膜能产生强烈的光受激辐射,这表明此种材料可用于制造紫外光半导体激光器,此种激光器在光信息存在贮上有广泛应用。文章介绍了最近几年来用不同方法制备的ZnO薄膜的光受激辐射的研究进展。     

毫微晶材料的结构和性能

本文综述了八十年代发展起来的毫微晶材料的结构和性能．毫微晶材料中，界面剖分占原子总数的９０％左右．实验结果表明，界面部分原子的徘列既不象晶态材料那样长程有序，也不象非晶态材料那样短程有序，可以看成是一种类似于气体的结构．这种材料在力学、磁学、热学等方面的性能相对于相同成分的多晶材料、非晶态材料有了很大的改进，是一种具有广阔发展前景的新型材料．     

ZnO Nanostructures Grown on A1N/Sapphire Substrates by MOCVD

ZnO nanorods and nanotubes are successful synthesized on A1N/sapphire substrates by metal-organic chemical vapour deposition （MOGVD）. The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the A1N under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.[第一段]     

半导体纳米结构中的库仑阻塞现象

库仑阻塞效应是近年来固体物理中的研究热点之一，扼要介绍了金属 隧道结及 体量子点中的库仑阻塞现象的基本特性，库仑阻塞与电子态尺寸量子化之间的相互影响，量子点旋转门器件（QDTS）的原理和其他潜在的应用前景。     

透明陶瓷及应用

透明陶瓷具有电光转换特性。在护目镜、图象存储等方面有广泛应用。     

背入射Au/ZnO/Al结构肖特基紫外探测器

设计制作了一种Au/ZnO/Al结构的紫外探测器,光的入射方式采用背入射式。ZnO薄膜是用磁控溅射在蓝宝石衬底上制备的。I-V测试表明:Au与ZnO形成了肖特基接触。得到探测器的光响应峰值在352nm,截止边为382nm,可见抑制比达一个量级。由于该探测器是一种垂直结构器件,对于进一步实现ZnO紫外探测器阵列及单光子探测有很好的研究价值。     

Enhancing UV photosensitivity of ZnO UV nanosensor using electrical stimulation at megahertz frequency

We report a novel technique to enhance the ultraviolent (UV) photosensitivity of ZnO nanosensor with ZnO nanowires bridged on micromachined metallic electrodes. The experimental results reveal that the photoconductivity and the time response of the ZnO nanowire sensor with either Schottky or Ohmic contacts are significantly improved by electrifying the nanowire sensors using an alternating current at the frequency of megahertz. An integrated UV sensor incorporating ZnO nanowires with a constant current mode driving circuit is developed, which demonstrates promising sensitivity and time response to UV illumination with a low power consumption.     

ZnO nanorod-based UV photodetection and the role of persistent photoconductivity

We report on the substantial persistent photoconductivity (PPC) response exhibited by the zinc oxide (ZnO) nanorod-based ultraviolet (UV) photodetection system. An increase in photocurrent and, hence, rise in PPC was observed for larger UV exposure times at regular intervals. Triggered by quantum efficiency, the increment in sustained conduction band electrons is proposed as the main reason behind the increased photocurrent response. In contrast, the trap centers located below the conduction band are expected to slow down the recombination rate, which accounts for the rise in PPC. The lowering of PPC upon annealing suggests the surface dependent nature of the PPC. The growth and decay mechanism of PPC has a direct relevance while assessing figure of merit of prototype nanostructure-based optical sensor and UV photodetectors.     

Enhancing UV photosensitivity of a ZnO UV nanosensor using electrical stimulation at megahertz frequency

We report a novel technique to enhance the ultraviolet (UV) photosensitivity of a ZnO nanosensor with ZnO nanowires bridged on micromachined metallic electrodes. The experimental results reveal that the photoconductivity and the time response of the ZnO nanowire sensor with either Schottky or Ohmic contacts are significantly improved by electrifying the nanowire sensors using an alternating current at the frequency of megahertz. An integrated UV sensor incorporating ZnO nanowires with a constant current mode driving circuit is developed, which demonstrates promising sensitivity and time response to UV illumination with a low power consumption.     

The fabrication and characterization of ZnO UV detector

ZnO films were deposited on GaAs substrates by radio frequency (rf) magnetron sputtering followed by an ambient-controlled heat treatment process for arsenic doping. In Hall measurements, the As-doped ZnO films showed the characteristics of p-type semiconductor. The ZnO thin film p–n homojuctions were then fabricated to investigate the electrical properties of the films. The p–n homojunctions exhibited the distinct rectifying current–voltage (I–V) characteristics. The turn-on voltage was measured to be 3.0 V under the forward bias. When ultraviolet (UV) light (λ = 325 nm) was irradiated on the p–n homojunction, photocurrent of 2 mA was detected. Based on these results, it is proposed that the p–n homojunction herein is a potential candidate for UV photodetector and optical devices.     

ZnO肖特基势垒紫外探测器

以p-Si(111)为衬底,用水热法首次制得六棱微管ZnO。并以此为有源区利用平面磁控溅射技术沉积得到Ag叉指状电报,从而制作了Ag／n-ZnO肖特基势垒结紫外探测器。对该紫外光探测器的暗电流和365nm波长光照下的光电流、光响应和量子效率进行了测试。测试结果表明：Ag和ZnO六棱管间已形成肖特基接触．其有效势垒高度为0．35eV。无光照时,暗电流很小,当用λ=365nm的光照射Ag/n-ZnO肖特基结时．在5．9V偏压时,光生电流分别为25．6,57．9μA。Ag／n-ZnO紫外探测器有明显的光响应特性和较高的量子效率,在366nm波长处,光响应度达到最大值0．161A／W,量子效率为54．7％。     

紫外激光等选育生淀粉糖化酶高产菌株及其应用

以紫外线、LiCl、5氟尿嘧啶、HNO₂为诱变剂,黑曲霉Sx为出发菌株,选育出生淀粉糖化酶酶活力提高12%的突变株黑曲霉S’x制取黑曲霉S’x的原生质体,用HeNe激光照射,经反复筛选得到突变株黑曲霉Sy,其酶活力较出发菌株提高51%,而酸性蛋白酶活力降低45%并对其在农作物秸杆的应用进行了研究.