Growth of size-tunable periodic Ni silicide nanodot arrays on silicon substrates

The fabrications of size-tunable periodic arrays of nickel metal and silicide nanodots on (0 0 1)Si substrates using polystyrene (PS) nanosphere lithography (NSL) and heat treatments have been investigated. The growth of epitaxial NiSi₂ was found to be more favorable for the Ni metal nanodot arrays. The effect becomes more pronounced with a decrease in the size of the Ni nanodots. The sizes of the epitaxial NiSi₂ nanodots were tuned from 38 to 110 nm by varying the diameter of the PS spheres and heat treatment conditions. These epitaxial NiSi₂ nanodots formed on (0 0 1)Si were found to be heavily faceted and the faceted structures were more prone to form at higher temperatures. Based on TEM, HRTEM and SAED analysis, the faceted NiSi₂ nanodots were identified to be inverse pyramids in shape. Compared with the NiSi₂ nanodot arrays formed using single-layer PS sphere masks, the epitaxial NiSi₂ nanodot arrays formed from the double-layer PS sphere templates exhibit larger interparticle spacings and smaller particle sizes. Since the nanoparticle sizes, shapes and interparticle spacings can be adjusted by tuning the diameter of the PS spheres, stacking conditions, and heat treatment conditions, the PS NSL technique promises to be an effective patterning method for growth of other nanostructures.     

Growth of high-density Ru- and RuO2-composite nanodots on atomic-layer-deposited Al2O3 film

Growth of Ru- and RuO₂-composite (ROC) nanodots on atomic-layer-deposited Al₂O₃ film has been studied for the first time using ion-beam sputtering followed by post-deposition annealing (PDA). X-ray photoelectron spectroscopy analyses reveal that RuO₂ and Ru co-exist before annealing, and around 10% RuO₂ is reduced to metallic Ru after PDA at 900 °C for 15 s. Scanning electron microscopy measurements show that well-defined spherical ROC nanodots are not formed till the PDA temperature is raised to 900 °C. The mean diameter of the nanodots enlarges with increasing PDA temperature whereas the nanodot density decreases, which is attributed to coalescence process between adjacent nanodots. It is further illustrated that the resulting nanodot size and density are weakly dependent on the annealing time, but are markedly influenced by the decomposition of RuO₂. In this article, the ROC nanodots with a high density of 1.6 × 10¹¹ cm⁻², a mean diameter of 20 nm with a standard deviation of 3.0 nm have been achieved for the PDA at 900 °C for 15 s, which is promising for flash memory application.     

Controlled growth and field emission properties of zinc oxide nanopyramid arrays

Single-crystalline, pyramidal zinc oxide nanorods have been synthesized in a large quantity on p-Si substrate via catalyst-free thermal chemical vapor deposition at low temperature. SEM investigations showed that the nanorods were vertically aligned on the substrate, with diameters ranging from 60 to 80 nm and lengths about 1.5 μm. A self-catalysis VLS growth mechanism was proposed for the formation of the ZnO nanorods. The field emission properties of the ZnO nanopyramid arrays were investigated. A turn-on field about 3.8 V/μm was obtained at a current density of 10 μA/cm², and the field emission data was analyzed by applying the Fowler-Nordheim theory. The stability of emission current density under a high voltage was also tested, indicating that the ZnO nanostructures are promising for an application such as field emission sources.     

Growth and field emission properties of nanotip arrays of amorphous carbon with embedded hexagonal diamond nanoparticles

Nanotip arrays of amorphous carbon with embedded hexagonal diamond nanoparticles were prepared at room temperature for use as excellent field emitters by a unique combination of anodic aluminum oxide (AAO) template and filtered cathodic arc plasma (FCAP) technology. In order to avoid nanopore array formation on the AAO surface, an effective multi-step treatment employing anodization and pore-widening processes alternately was adopted. The nanotips were about 100 nm in width at the bottom and 150 nm in height with density up to 10¹⁰ cm⁻². Transmission electron microscopy investigation indicates that many nanoparticles with diameters of about 10 nm were embedded in the amorphous carbon matrix, which was proved to be hexagonal diamond phase by Raman spectrum and selected-area electron diffraction. There is no previous literature report on the field emission properties of hexagonal diamond and its preparation at room temperature under high-vacuum condition. The nanotip arrays with hexagonal diamond phase exhibit a low turn-on field of 0.5 V/μm and a threshold field of 3.5 V/μm at 10 mA/cm². It is believed that the existence of hexagonal diamond phase has improved the field emission properties.     

Electron field emission from a patterned array of diamond-like carbon on anodic aluminum oxide template

A patterned array of diamond-like carbon (DLC) was grown on anodic aluminum oxide (AAO) template by filtered cathodic arc plasma (FCAP) technique at room temperature. The diameters of patterned array of DLC were ∼150 nm, and the patterned array density was estimated to ∼10⁹ cm⁻². A broad asymmetric band ranging from 1000 cm⁻¹ to 2000 cm⁻¹ was detected by Raman spectrum attributed to characteristic band of DLC. The fraction of sp³ bonded carbon atoms of the patterned array of DLC was measured by X-ray photoelectron spectrum (XPS) and the ratio was about 62.4%. Field emission properties of the patterned array of DLC were investigated. A low turn-on field of 3.4 V/μm at 10 μA/cm² with an emission area of 3.14 mm² was achieved. The results indicated that the electrons were emitted under both the effect of enhanced field because of the geometry and the work function of the DLC sample. Based on Fowler-Nordheim plot, the values of work function for the patterned array of DLC were estimated in range of 0.38 to 1.75 from a linearity plot.     

Field emission from awl-shaped diamond-like carbon by using filtered cathodic arc plasma technique on anodic aluminum oxide template

Awl-shaped diamond-like carbon (DLC) was directly grown on anodic aluminum oxide (AAO) template by using filtered cathodic arc plasma (FCAP) technique at room temperature. The awls of DLC were about 250 nm in the height and the diameters of the awls were ∼100 nm at the top. The awl density was estimated to be ∼10⁸ cm⁻². A broad asymmetric band ranging from 1100 to 1800 cm⁻¹ was detected by Raman spectrum. This asymmetric band was characteristic band of DLC. The sp³/(sp³+sp²) ratio of C-C bond of the awl-shaped DLC was measured by X-ray photoelectron spectrum, and it was about 68.3%. Field-emission properties of the awl-shaped DLC were investigated. A low turn-on field of 2.6 V/μm at 10 μA/cm² with an emission area of 3.14 mm² was achieved, and the emission current stability was very good. The results indicated that the electrons were emitted under both the effect of enhanced field because of the geometry and the work function of the DLC sample. Based on Fowler-Nordheim plot, the values of work function for the awl-shaped DLC were estimated in ranges of 0.23-1.08 from a linearity plot.     

Silver nanostructure arrays abundant in sub-5 nm gaps as highly Raman-enhancing substrates

Two types of highly Raman-enhancing arrays substrates were fabricated using anodic aluminum oxide (AAO) templates by controlling the AAO template temperature and evaporated silver thickness during e-beam evaporating: complex patterned Ag nanoparticle arrays abundant in sub-5 nm gaps (type I); hexagonal Ag nanopore arrays (type II). The surface enhanced Raman scattering (SERS) enhancement factors (EF) of both substrates are estimated experimentally to exceed 10⁵, especially that of type I reaches 10⁷ due to the existence of numerous sub-5 nm gaps. The simulation using finite-difference time-domain (FDTD) method confirmed that gap effect has significantly improved the substrates’ SERS activity.     

新型氧化铝模板自组装制备非晶碳纳米点阵列膜及其场发射性能研究

通过对阳极氧化铝(AAO)模板进行特殊扩孔处理,消除了AAO模板中带电阴离子对沉积碳离子的不良影响,利用磁过滤阴极弧等离子体沉积技术成功制备了非晶碳纳米尖点阵列膜.场发射扫描电镜(FESEM)分析表明,经过氧化和扩孔多步处理制备的AAO模板具有特殊的开口结构,制备的非晶碳纳米尖点阵列完整地复制了AAO模板的孔道阵列结构,纳米点排列整齐有序,直径约100nm,密度达1010cm-2,样品的场发射测试显示,非晶碳纳米点阵列具有良好的电子发射性能,发射电流为10mA/cm-2时的阈值电场为3.7V/μm.     

Field electron emission improvement of ZnO nanorod arrays after Ar plasma treatment

Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved after radio-frequency (rf) Ar plasma treatment. With Ar plasma treatment for 30 min, flat tops of the as-grown ZnO nanorods have been etched into sharp tips without damaging ZnO nanorod geometrical morphologies and crystallinity. After the Ar ion bombardment, the emission current density increases from 2 to 20 μA cm⁻² at 9.0 V μm⁻¹ with a decrease in turn-on voltage from 7.1 to 4.8 V μm⁻¹ at a current density of 1 μA cm⁻², which demonstrates that the field emission of the as-grown ZnO nanorods has been efficiently enhanced. The scanning electron microscopy (SEM) results, in conjunction with the results of transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence observation, are used to investigate the mechanisms of the field emission enhancement. It is believed that the enhancements can be mainly attributed to the sharpening of rod tops, and the decrease of electrostatic screening effect.     

Enhanced field emission from ZnO nanopencils by using pyramidal Si(1 0 0) substrates

Zinc oxide nanopencil arrays were synthesized on pyramidal Si(1 0 0) substrates via a simple thermal evaporation method. Their field emission properties have been investigated: the turn-on electric field (at the current density of 10 μA/cm²) was about 3.8 V/μm, and the threshold electric field (at the current density of 1 mA/cm²) was 5.8 V/μm. Compared with similar structures grown on flat Si substrates, which were made as references, the pyramidal Si-based ZnO nanopencil arrays appeared to be superior in field emission performance, thus the importance of the non-flat substrates has been accentuated. The pyramidal Si substrates could not only suppress the field screening effect but also improve the field enhancement effect during the field emission process. These findings indicated that using non-flat substrates is an efficient strategy to improve the field emission properties.