Selective CO oxidation in hydrogen-rich gas over CuO/CeO2 catalysts

A series of CuO/CeO₂ catalysts with different Cu-Ce compositions were synthesized by co-precipitation method and characterized by X-ray diffraction, H₂-TPR, CO-TPD, SEM and X-ray photoelectron spectroscopy (XPS) techniques. The effects of Cu-Ce composition and water vapor on the catalytic properties for the selective CO oxidation in the hydrogen-rich gas were investigated. The results indicated that CuO (10%)/CeO₂ catalyst remained the maximum CO conversion and selectivity at 140 and 160 °C, while the performance of CuO/CeO₂ catalysts deteriorated with the CuO molar ratio further increased. The interfacial CuO and CeO₂ interaction and synergistic effect enhanced the redox properties of CuO/CeO₂ catalyst and the highly dispersed copper species were proposed as the active sites for the selective CO oxidation. The blockage of catalytic active sites by absorbed water and the formation of CO-H₂O surface complexes reduced the activity of CuO (10%)/CeO₂ catalyst. The decreasing of surface lattice oxygen and absorbed oxygen species and the agglomeration of copper particles were the plausible interpretations for the deactivation of CuO (10%)/CeO₂ catalyst.     

The surface properties and the activities in catalytic wet air oxidation over CeO2-TiO2 catalysts

No-noble metal CeO₂-TiO₂ catalysts prepared by sol-gel method were developed and examined for catalytic wet air oxidation (CWAO) of acetic acid. The structure of the catalysts was measured by BET, SEM, XRD, XPS and DTA-TG. We investigated the effect of the interactions of Ce and Ti on the structure of CeO₂-TiO₂ catalysts. The mechanisms of the relationships between the different content of Ti and the activity of CeO₂-TiO₂ catalysts were discussed. The results showed that the average crystal size of CeO₂ decreased and the surface areas increased; the low valence of Ce³⁺ increase, and the chemisorbed oxygen slightly decreased with the increase of Ti content on the surface of CeO₂-TiO₂ catalysts. The order of the activity in CWAO of acetic acid followed: Ce/Ti 1/1 > Ce/Ti 3/1 > Ce/Ti 1/3 > Ce/Ti 5/1 > CeO₂ > TiO₂ > no catalyst. In CWAO of acetic acid, the optimal atomic ratio of Ce and Ti was 1, and the highest COD removal was over 64% at 230 °C, 5 MPa and 180 min reaction time over Ce/Ti 1/1 catalyst. The excellent activity and stability of CeO₂-TiO₂ catalysts was observed in our study.     

Effect of Li2O and CoO-doping of CuO/Fe2O3 system on its surface and catalytic properties

Physicochemical, surface and catalytic properties of pure and doped CuO/Fe₂O₃ system were investigated using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), nitrogen adsorption at −196 °C and CO-oxidation by O₂ at 80-220 °C using a static method. The dopants were Li₂O (2.5 mol%) and CoO (2.5 and 5 mol%). The results revealed that the increase in precalcination temperature from 400 to 600 °C and Li₂O-doping of CuO/Fe₂O₃ system enhanced CuFe₂O₄ formation. However, heating both pure and doped solids at 600 °C did not lead to complete conversion of reacting oxides into CuFe₂O₄. The promotion effect of Li₂O dopant was attributed to dissolution of some of dopant ions in the lattices of CuO and Fe₂O₃ with subsequent increase in the mobility of reacting cations. CoO-doping led also to the formation of mixed ferrite Co_xCu_1−xFe₂O₄. The doping process of the system investigated decreased to a large extent the crystallite size of unreacted portion of Fe₂O₃ in mixed solids calcined at 600 °C. This process led to a significant increase in the S_BET of the treated solids. Doping CuO/Fe₂O₃ system with either Li₂O or CoO, followed by calcination at 400 and 600 °C decreased its catalytic activity in CO-oxidation by O₂. However, the activation energy of the catalyzed reaction was not much affected by doping.     

On the existence of a homologous series of BamCum+nOy oxides with the cubic structure of the BaCuO2 oxide

Phase relations have been studied in the BaO–CuO_x system in the range of 42.0–83.0 mol.% CuO at P(O₂) = 21 kPa (air) by visual polythermal analysis (VPA), powder X-ray diffraction (XRD), differential thermal analysis (DTA), thermogravimetric analysis (TGA), chemical analysis (CA), and electron diffraction (ED) with simultaneous elemental analysis (EA) in a transmission electron microscope (TEM). The existence of discrete crystallization fields of barium–copper oxides of cation compositions Ba₄Cu₅O_y, Ba₅Cu₆O_y, Ba₇Cu₈O_y, Ba₁₂Cu₁₃O_y, and Ba₂₄Cu₂₅O_y, which have the cubic structure of the BaCuO₂ oxide, is revealed in the studied region of the system. The oxides may be represented as members of a Ba_mCu_m+nO_y homologous series. The BaCuO₂ oxide does not exist in the subsolidus region and does not have its own crystallization field. The oxygen-deficient oxide BaCuO_1.78 of the cation composition (Ba:Cu) 1:1 with the BaCuO₂ cubic structure is found in melted samples of the 50.0 mol.% CuO composition quenched at 1020–1060 °С.     

Cu-Zn-Al mixed metal oxides derived from hydroxycarbonate precursors for H2S removal at low temperature

One series of Cu-Zn and two series of Cu-Zn-Al hydroxycarbonate precursors with varying metal molar ratios were prepared via co-precipitation or multi-precipitation method, and the mixed metal oxides obtained by calcination of the precursor materials were used as adsorbents for H₂S removal in the range of 25-100 °C. The results of H₂S adsorption tests showed that these mixed oxides, especially two series of Cu-Zn-Al mixed metal oxides exhibited markedly high breakthrough sulfur capacities (ranging from 4.4 to 25.7 g S/100 g-sorbent with increase of Cu/Zn molar ratio) at 40 °C. Incorporation Cu and/or Al decreased the mean crystalline sizes of ZnO and CuO species in the Cu-Zn and Cu-Zn-Al mixed metal oxide adsorbents by decreasing of mean crystalline sizes of hydroxycarbanate phases mainly including hydrozincite, aurichalcite and malachite, segregation of Al phase, etc. Higher breakthrough sulfur capacity of each adsorbent in two ternary series than that of the corresponding adsorbent in binary series should be ascribed to the enhancement of the dispersion of ZnO and/or CuO species with incorporation of aluminum, thereby increasing the overall rate of reaction between the adsorbent and H₂S by reducing the thickness of potential sulfide shell on the outer layer of the oxide crystalline grains and increasing the area of the interface for the exchange of HS⁻/S²⁻ and O²⁻. For each series of adsorbents, the breakthrough sulfur capacity increased with the increase of Cu/Zn molar ratio regardless of changes of the dispersion of CuO and/or ZnO. This phenomenon might be mainly attributed to faster rate of the lattice diffusion of HS⁻, S²⁻ and O²⁻ or exchange of HS⁻/S²⁻ and O²⁻ during the sulfidation of CuO than that during the sulfidation of ZnO due to less rearrangement of the anion lattice.     

Highly active Ce1−xCuxO2 nanocomposite catalysts for the low temperature oxidation of CO

A series of Ce_1−xCu_xO₂ nanocomposite catalysts with various copper contents were synthesized by a simple hydrothermal method at low temperature without any surfactants, using mixed solutions of Cu(II) and Ce(III) nitrates as metal sources. These bimetal oxide nanocomposites were characterized by means of XRD, TEM, HRTEM, EDS, N₂ adsorption, H₂-TPR and XPS. The influence of Cu loading (5-25 mol%) and calcination temperature on the surface area, particle size and catalytic behavior of the nanocomposites have been discussed. The catalytic activity of Ce_1−xCu_xO₂ nanocomposites was investigated using the test of CO oxidation reaction. The optimized performance was achieved for the Ce_0.80Cu_0.20O₂ nanocomposite catalyst, which exhibited superior reaction rate of 11.2 × 10⁻⁴ mmol g⁻¹ s⁻¹ and high turnover frequency of 7.53 × 10⁻² s⁻¹ (1% CO balanced with air at a rate of 40 mL min⁻¹, at 90 °C). No obvious deactivation was observed after six times of catalytic reactions for Ce_0.80Cu_0.20O₂ nanocomposite catalyst.     

Electrical behaviour of catalytic nanostructured CeO2/CuOx composites under air-methane gas impulses

Nanostructured composites based on copper oxide and cerium dioxide phases [CuO-CeO₂] were elaborated from sol-gel route, with weight fractions of CuO phase ranging between 0 and 0.4. They are interesting potential catalysts allowing conversion of CH₄ and CO into CO₂ and H₂O and might be used in miniaturized gas sensors. An electrical study of this nanostructured system was carried out to determine catalytic behaviours under air-methane impulses at 350 °C. The electrical analysis was based on a specific homemade electronic device. Time dependent interactions between gas pulses and solid catalyst (CuO/CeO₂) were analyzed from a frequency modification of the electronic device. Kinetic parameters were determined from a model describing adsorption and desorption of gases adapted to short interaction time between gas and solid. These time dependent electrical behaviours were then correlated with infrared spectroscopy analyses allowing time dependent analysis of methane conversion into CO₂ gas, for long interaction time between gas and solid.     

Influence of the physico-chemical properties of CeO2-ZrO2 mixed oxides on the catalytic oxidation of NO to NO2

Commercial and home-made Ce-Zr catalysts prepared by co-precipitation were characterised by XRD, Raman spectroscopy, N₂ adsorption at −196 °C and XPS, and were tested for NO oxidation to NO₂. Among the different physico-chemical properties characterised, the surface composition seems to be the most relevant one in order to explain the NO oxidation capacity of these Ce-Zr catalysts. As a general trend, Ce-Zr catalysts with a cerium-rich surface, that is, high XPS-measured Ce/Zr atomic surface ratios, are more active than those with a Zr-enriched surface. The decrease in catalytic activity of the Ce-Zr mixed oxided upon calcinations at 800 °C with regard to 500 °C is mainly attributed to the decrease in Ce/Zr surface ratio, that is, to the surface segregation of Zr. The phase composition (cubic or t′′ for Ce-rich compositions) seems not to be a direct effect on the catalytic activity for NO oxidation in the range of compositions tested. However, the formation of a proper solid solution prevents important surface segregation of Zr upon calcinations at high temperature. The effect of the BET surface area in the catalytic activity for NO oxidation of Ce-Zr mixed oxides is minor in comparison with the effect of the Ce/Zr surface ratio.     

Spectroscopic studies of interfacial structures of CeO2-TiO2 mixed oxides

We have investigated the geometric and electronic structures of the cerium oxide (CeO₂)-titanium dioxide (TiO₂) mixed oxides with various Ce/TiO₂ weight ratios prepared by the sol-gel method in detail by means of X-ray diffraction (XRD), high-resolution X-ray photoelectron spectroscopy (XPS), Raman spectroscopy excited by 325 and 514.5 nm lasers, and scanning electron microscope (SEM). Existence of cerium effectively inhibits the phase transition of TiO₂ from the anatase phase to the rutile phase. XRD peaks of TiO₂ anatase attenuate continuously with the increasing amount of CeO₂ in the mixed oxide, but the XRD peaks of cubic CeO₂ appear only after the weight ratio of Ce/TiO₂ reaches 0.50. The average crystalline sizes of TiO₂ anatase and cubic CeO₂ in CeO₂-TiO₂ mixed oxides are smaller than those in the corresponding individual TiO₂ anatase and cubic CeO₂. Raman spectroscopy excited by the 514.5 nm laser detects CeO₂ after the weight ratio of Ce/TiO₂ reaches 0.70 whereas Raman spectroscopy excited by the 325 nm laser detects CeO₂ after the weight ratio of Ce/TiO₂ reaches 0.90. XPS results demonstrate that Ti exists in the form of Ti⁴⁺ in the CeO₂-TiO₂ mixed oxide. Ce is completely in the form of Ce³⁺ in the mixed oxides with a 0.05 weight ratio of Ce/TiO₂. With the increasing weight ratio of Ce/TiO₂, Ce⁴⁺ dominates. On basis of these results, we proposed that CeO₂ initially nucleates at the defects (oxygen vacancies) within TiO₂ anatase, forming an interface bridged with oxygen between CeO₂ and TiO₂ anatase. At the interface, Ce species cannot substitute Ti⁴⁺ in the lattice of TiO₂ anatase whereas Ti⁴⁺ can substitute Ce⁴⁺ in the lattice of cubic CeO₂. The decreasing concentration of oxygen vacancies, the Ti-O-Ce interface, and the decreasing average crystalline size of TiO₂ anatase act to inhibit the phase transformation of TiO₂ anatase. With the increasing amounts of CeO₂, the CeO₂ clusters continuously grow and form cubic CeO₂ nanocrystals. Spectroscopic results strongly demonstrate that the surface region of CeO₂-TiO₂ mixed oxide is enriched with TiO₂.     

Synthesis of Au-CeO2/SiO2 catalyst via adsorbed-layer reactor technique combined with alcohol-thermal treatment

Au-CeO₂/SiO₂ was prepared via adsorbed-layer reactor technique combined with alcohol-thermal treatment. The catalytic performance in complete oxidation of benzene was investigated. TEM, Raman characterization showed that Au particles grew up obviously during alcohol-thermal process, while CeO₂ particles maintained 4 nm in diameter. The content of oxygen vacancies and adsorbed oxygen species on catalysts surface increased apparently. Alcohol-thermally treated Au-CeO₂/SiO₂ and CeO₂/SiO₂ showed similar change in catalytic performance, and were much superior to calcined CeO₂/SiO₂. Of alcohol-thermally treated and calcined CeO₂/SiO₂, initial temperatures of the reaction were 80 °C and 150 °C, respectively. The benzene conversions reached 85% and 40% at 300 °C.     

Synthesis and photoluminescent characteristics of Sr2CeO4 phosphors prepared via a microwave-assisted solvothermal process

Blue-light emitting Sr₂CeO₄ phosphors were successfully prepared via a microwave-assisted solvothermal method employing ethylene glycol as a solvent. The formation of Sr₂CeO₄ phase began when the solvothermally derived precursors were heated at 800 °C. With increase in heating temperatures, significantly enhanced excitation and emission intensities were observed because of an increase in the amount of Sr₂CeO₄. Heating at 1200 °C led to a substantial decrease in mission intensity due to thermal decomposition of Sr₂CeO₄ at elevated temperatures. The solvothermally derived Sr₂CeO₄ was found to exhibit higher emission intensity than the solid-state-reaction-derived phosphors. According to the deconvoluted emission spectra, two emission peaks are attributed to two metal-to-ligand charge-transfer states. Based on the deconvoluted results, a qualitative energy-level diagram of Sr₂CeO₄ was proposed. VUV-excited luminescence studies for Sr₂CeO₄ indicate that one peak at 193 nm is assigned to the charge-transfer transition between Sr²⁺ and O²⁻.     

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

The impact of the ZrO₂/La₂O₃ film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO₂/La₂O₃ high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO₂ phases. This effect depends on the absolute thickness of ZrO₂ within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm², and interface trap densities in the range of 2-5 × 10¹² eV⁻¹ cm⁻².     

Formation of copper islands on a native SiO2 surface at elevated temperatures

A combination of in situ X-ray photoelectron spectroscopy analysis and ex situ scanning electron- and atomic force microscopy has been used to study the formation of copper islands upon Cu deposition at elevated temperatures as a basis for the guided growth of copper islands. Two different temperature regions have been found: (I) up to 250 °C only close packed islands are formed due to low diffusion length of copper atoms on the surface. The SiO₂ film acts as a barrier protecting the silicon substrate from diffusion of Cu atoms from oxide surface. (II) The deposition at temperatures above 300 °C leads to the formation of separate islands which are (primarily at higher temperatures) crystalline. At these temperatures, copper atoms diffuse through the SiO₂ layer. However, they are not entirely dissolved in the bulk but a fraction of them forms a Cu rich layer in the vicinity of SiO₂/Si interface. The high copper concentration in this layer lowers the concentration gradient between the surface and the substrate and, consequently, inhibits the diffusion of Cu atoms into the substrate. Hence, the Cu islands remain on the surface even at temperatures as high as 450 °C.     

Immobilization of glucose oxidase using CoFe2O4/SiO2 nanoparticles as carrier

Aminated-CoFe₂O₄/SiO₂ magnetic nanoparticles (NPs) were prepared from primary silica particles using modified StÖber method. Glucose oxidase (GOD) was immobilized on CoFe₂O₄/SiO₂ NPs via cross-linking with glutaraldehyde (GA). The optimal immobilization condition was achieved with 1% (v/v) GA, cross-linking time of 3 h, solution pH of 7.0 and 0.4 mg GOD (in 3.0 mg carrier). The immobilized GOD showed maximal catalytic activity at pH 6.5 and 40 °C. After immobilization, the GOD exhibited improved thermal, storage and operation stability. The immobilized GOD still maintained 80% of its initial activity after the incubation at 50 °C for 25 min, whereas free enzyme had only 20% of initial activity after the same incubation. After kept at 4 °C for 28 days, the immobilized and free enzyme retained 87% and 40% of initial activity, respectively. The immobilized GOD maintained approximately 57% of initial activity after reused 7 times. The K_M (Michaelis-Menten constant) values for immobilized GOD and free GOD were 14.6 mM and 27.1 mM, respectively.     

Fabrication and evolution of Cu nanoparticles in Al2O3 crystal by ion implantation and annealing at different atmospheres

Single crystal Al₂O₃ samples were implanted with 45 keV Cu ion implantation at a dose of 1 × 10¹⁷ ions/cm², and then subjected to furnace annealing in vacuum or with a flow of oxygen gas. Various techniques, such as ultraviolet-visible spectroscopy, X-ray diffraction spectroscopy and atomic force microscopy, have been used to investigate formation of Cu NPs and their evolution. Our results clearly show that the evolution of Cu NPs depends strongly on annealing atmosphere in the temperature range up to 600 °C. Annealing in vacuum only gives rise to a slight change in the size of Cu NPs. No evidence for oxidization of Cu NPs has been revealed. Remarkable modifications in Cu NPs, including the size increase and the effective transformation into CuO NPs, have been observed for the samples annealed at oxygen atmosphere. The results have been tentatively discussed in combination with the role of oxygen from atmosphere in diffusion of Cu atoms towards the surface and its interactions with Cu NPs during annealing.     

Pyridine-thermal synthesis and high catalytic activity of CeO2/CuO/CNT nanocomposites

Carbon nanotubes (CNTs) were controllably coated with the uninterrupted CuO and CeO₂ composite nanoparticles by a facile pyridine-thermal method and the high catalytic performance for CO oxidation was also found. The obtained nanocomposites were characterized by transmission electron microscopy, scanning electron microscopy, X-ray diffraction as well as X-ray photoelectron spectroscopy. It is found that the CuO/CeO₂ composite nanoparticles are distributed uniformly on the surface of CNTs and the shell of CeO₂/CuO/CNT nanocomposites is made of nanoparticles with a diameter of 30-60 nm. The possible formation mechanism is suggest as follows: the surface of CNTs is modified by the pyridine due to the π-π conjugate role so that the alkaline of pyridine attached on the CNT surface is more enhanced as compared to the one in the bulk solvent, and thus, these pyridines accept the proton from the water molecular preferentially, which result in the formation of the OH⁻ ions around the surface of CNTs. Subsequently, the metal ions such as Ce³⁺ and Cu²⁺ in situ react with the OH⁻ ions and the resultant nanoparticles deposit on the surface of CNTs, and finally the CeO₂/CuO/CNT nanocomposites are obtained. The T₅₀ depicting the catalytic activity for CO oxidation over CeO₂/CuO/CNT nanocomposites can reach ∼113 °C, which is much lower than that of CeO₂/CNT or CuO/CNT nanocomposites or CNTs.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Effective method for preparation of oxide-free Ge2Sb2Te5 surface: An X-ray photoelectron spectroscopy study

Cleaning the surfaces of the as-deposited Ge₂Sb₂Te₅ was studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). The mixed native oxides on the as-deposited Ge₂Sb₂Te₅ surface can be easily removed by dipping Ge₂Sb₂Te₅ in de-ionized water for 1 min, while the surface morphology remains unchanged after cleaning. Native oxides only re-grow after exposure to air for more than 4 min. Although dipping in water leads to a surface layer deficient in Ge and Sb, the surface composition of Ge₂Sb₂Te₅ can recover to its stoichiometric value after annealing at 200 °C in vacuum. The phase remains amorphous at room temperature after dipping in water, and changes to fcc and hcp after annealing at 100 and 220 °C, respectively.     

In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution

GaSb(0 0 1) was treated with (NH₄)₂S_x and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb-Sb bonding) as well as Sb³⁺ and Sb⁵⁺ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 °C. No evidence of Ga-Ga bonding was observed whereas the Ga¹⁺/Ga-S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 °C.     

Thermal stability, oxygen non-stoichiometry and transport properties of LaNi0.6Fe0.4O3

Thermal stability, oxygen non-stoichiometry and electrical conductivity of LaNi_0.6Fe_0.4O_3−δ were investigated in the temperature region of 20-1000 °C in Ar/O₂ gas flows at oxygen partial pressures between 0.5 and 21,000 Pa. Diffusion mobility was measured in Ar/O₂ gas flow at pO₂ = 18 Pa. Crystal structure of this compound was found to be stable at the mentioned experimental conditions. LaNi_0.6Fe_0.4O_3−δ is a p-type semiconductor with metallic type conductivity above 150 °C at the investigated pO₂ range. Two different (fast and slow) oxygen exchange areas on the temperature-pO₂ diagram were established, which are due to two different oxygen anion positions in the double B-site mixed perovskite structure. Oxygen non-stoichiometry in the fast oxygen exchange region reaches about 0.005 of oxygen atomic index. Chemical diffusion and oxygen surface exchange coefficients do not vary at 600-800 °C, but show visible increase above 800-850 °C.