Divalent rare-earth ions in LaF<Subscript>3</Subscript> crystals

The optical spectra and electric conductivity of LaF₃ crystals doped with 0.01, 0.1, and 0.3 mol % YbF₃, where Yb was partly or completely recharged to the divalent state, are studied. The long-wavelength absorption band of 370 nm is caused by electrons transitioning from state 4f ¹⁴ to the level of anion vacancies. The remaining bands at 300–190 nm are caused by 4f ¹⁴–5d ¹4f ¹³ transitions in Yb²⁺. The bulk electric conductivity and peaks of the dielectric losses of LaF₃–Yb²⁺ crystals are caused by Yb²⁺–anion vacancy dipoles. The activation energy of the reorientation of Yb dipoles is 0.58 eV. The optical and dielectric properties of Yb²⁺ centers are compared to those of Sm²⁺ and Eu²⁺ centers studied earlier in LaF₃ crystals.     

Activation energy of ion motion in the nanodimensional lattice of LaF<Subscript>3</Subscript> superionic conductor

Quantum chemistry calculations of the intracrystalline potential relief in the nanolattice of LaF₃ superionic crystal that contains 1200 ions and measures 3.5 × 2.0 × 2.2 nm along the x, y, and z axis, respectively, have been performed. Using the MOPAC 2012 program package, the potential relief profile has been simulated in the central part of the nanolattice for an elementary act of disordering in the lowest melting sublattice of F₁ ions. It has been found that the height E _m of barriers that prevent the motion of F₁ in the dielectric phase of LaF₃ crystal equals 0.37 eV and decreases to 0.15 eV in the superionic state. In addition, activation energy E _a of F₁ sublattice disordering in the dielectric and superionic states is equal to 0.16 and 0.04 eV, respectively. The profiles of the potential relief calculated on the xy and xz faces of the LaF₃ 3D nanolattice for the case when an F₁ ion moves along the x crystal axis in the dielectric state are presented. The corresponding energy barriers are 1.5–2.0 times lower than those at the center of the LaF₃ nanlattice.     

Raman scattering spectroscopy of inclusions of carbon in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films and its solid solutions with HfO<Subscript>2</Subscript>

We apply Raman scattering spectroscopy to study the nature of carbon inclusions in Al₂O₃ and (HfO₂) _x (Al₂O₃)_{1 ? x} films deposited using volatile complex compounds. Raman spectra of the films under investigation contain D and G vibrational modes, which indicate that carbon clusters of the sp ² configuration tend to form in the films. We estimate the size of clusters from the integrated intensity ratio I _D /I _G and find it to be in the range of 14–20 Å. The content of hydrogen in carbon clusters is calculated from the height of the photoluminescence pedestal and is found to vary from 14 to 30 at % depending on the regime of the film’s synthesis.     

Anomalous temperature dependence of photoluminescence in GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films and GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/SiO<Subscript>2</Subscript> nano-heterostructures

The optical properties of GeO _x film and GeO _x /SiO₂ multilayer heterostructures (with thickness of GeO _x layers down to 1 nm) were studied with the use of Raman scattering and infrared spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeO _x and interface defects for the case of GeO _x /SiO₂ multilayer heterostructures. From analysis of temperature dependence of photoluminescence intensity, it was found that rate of nonradiative transitions in GeO _x film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of photoluminescence intensities for GeO _x /SiO₂ multilayer heterostructures.     

Correction of the band gap of Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript> phosphor

Submicron samples of Y₂O₃:Eu³⁺ phosphor with elevated photoluminescence (PL) efficiency and activator concentration of 9 at % obtained by the sol–gel method were investigated by diffuse reflection spectroscopy and PL spectroscopy. It is found that the diffuse reflection spectrum in the vicinity of the fundamental absorption edge (<300 nm) is distorted by the superposition of the PL of Eu³⁺ ions, as a result of which the calculated value of optical band gap E _g of the Y₂O₃ matrix is overestimated. An algorithm for eliminating the PL influence on the absorption edge is proposed, and the correct E _g values are found to be 4.61 ± 0.12 and 4.50 ± 0.12 eV for annealing at 700 and 1300°C, respectively.     

Refractometry of mechanically compressed (NH<Subscript>4</Subscript>)<Subscript>2</Subscript>SO<Subscript>4</Subscript> crystals

The effect of uniaxial mechanical pressure σ _m ≤ 150 bar on the spectral (300–800 nm) dependence of the birefringerence Δn _i and refractive indices n _i of (NH₄)₂SO₄ crystals has been investigated. It is shown that the dispersion of n _i (λ) and Δn _i (λ) is normal and sharply increases with approach to the absorption edge. It is established that uniaxial pressure does not change the character of the dispersions dn _i /dλ and dΔn _i /dλ and only affects their magnitudes. It is shown that the increase in the refractive indices under uniaxial stress is mainly due to the increase in the refraction caused by the increase in the band gap and long-wavelength shift of the UV absorption band maximum.     

Synthesis and optical studies of GdCrO<Subscript>3</Subscript> nanoparticles

Here we report for the first time, a detailed synthesis mechanism of GdCrO₃ nanoparticles using a surfactant-less hydrothermal method. We also report a detailed study of their structural and optical properties. The selected area electron diffraction and powder X-ray diffraction studies of GdCrO₃ nanoparticles show pure phase and excellent crystallinity with average particle size around 50–60 nm. The structural analysis indicates a distorted perovskite crystal structure with lattice parameter values of a = 5.3099 ± 0.0022, b = 5.51793 ± 0.00226, and c = 7.60426 ± 0.00315 Å. For the first time, we report the room temperature UV–vis, photoluminescence, FTIR, and X-ray photoelectron spectroscopy results and their detailed analysis for GdCrO₃. These results provide optical signatures of the formation of GdCrO₃ where both Gd³⁺ and Cr³⁺ play dominant role in different frequency regions.     

Preparation and characterization of cerium doped LaCoO<Subscript>3</Subscript> perovskite

Cerium doped lanthanum cobaltite perovskites La_1–x Ce _x CoO₃ with x = 0, 0.2, 0.4 were prepared by the sol-gel method (calcined for 5 h at 750°C) and characterized by X-ray diffraction, X-ray absorption, energy dispersive X-ray spectroscopy and Brunauer–Emmett–Teller surface area analysis. The results showed that the cerium doping promoted the structural transformation of LaCoO₃ from rhombohedral into cubic structure. High specific surface area and small crystallite size were achieved at x = 0.2. The X-ray absorption results confirmed the formation of compound La_1–x Ce _x CoO₃.     

Energy band structure and X-ray spectra of phenakite Be<Subscript>2</Subscript>SiO<Subscript>4</Subscript>

The electronic structure of crystalline phenakite Be₂SiO₄ is investigated using x-ray emission spectroscopy (XES) (Be K _α XES, Si L _{2, 3} XES, O K _α XES) and x-ray absorption spectroscopy (XAS) (Be 1s XAS, Si 2p XAS, O 1s XAS). The energy band structure is calculated by the ab initio full-potential linearized augmented-plane-wave (FLAPW) method. The total and partial densities of states and the dispersion curves for the Be₂SiO₄ compound are presented. It is shown that the top of the valence band and the bottom of the conduction band of the Be₂SiO₄ compound are predominantly formed by the oxygen 2p states. According to the results obtained, the electron transition with the lowest energy supposedly can occur at the center of the Brillouin zone. The effective masses of electrons (0.5m _e ) and holes (3.0m _e ) for the Be₂SiO₄) compound are estimated.     

Optical studies of phase transitions in the (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>Ti(O<Subscript>2</Subscript>)F<Subscript>5</Subscript> crystal

Polarization-optical study of twinning and measurements of the Raman spectra and birefringence in oxyfluoride (NH₄)₃Ti(O₂)F₅ were carried out over the temperature range 90–350 K. Phase transitions were detected at temperatures T ₀₁ = 266 K (second-order transition) and T ₀₂ = 225 K (first order). It is assumed that the crystal symmetry is changed as follows: Fm3m ? I4/mmm ? I4/m. Anomalies of the spectral parameters are established in the frequency range of internal vibrations of ammonium ions and Ti(O₂)F₅ complexes. An analysis of the results shows that the transition at T ₀₁ is likely due to small shifts of the tetrahedral groups from their position on the triad axis and that the transition at T ₀₂ is due to fluorine-oxygen ordering of Ti(O₂)F₅ complexes.     

Magnetic structure of Er<Subscript>5</Subscript>Ge<Subscript>3</Subscript> at 4.2 K

A symmetry analysis of the possible magnetic structures of Er₅Ge₃ in the ground state is performed using the results of measurements of elastic magnetic neutron scattering at 4.2 K. It is shown that the minimum discrepancy factor R _m ≈9.5% corresponds to a modulated collinear magnetic structure in which the magnetic moments of erbium atoms are oriented along the a ₃ axis of the unit cell of the crystal structure and induce an antiferromagnetic longitudinal spin wave (AFLSW). The magnetic structure is characterized by the wave vector k=2π(0, 0, μ /a ₃) (where μ≈0.293) and the modulation period λ≈3.413a ₃. The magnetic ordering temperature T _N ≈38 K is determined from the temperature dependence of the intensity of magnetic reflections. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1653–1659. Original Russian Text Copyright ? 2003 by Vokhmyanin, Dorofeev.     

Impurity scattering effect in Pd-doped superconductor SrPt<Subscript>3</Subscript>P

We present a systematic study of the impurity scattering effect induced by Pd dopants in the superconductor SrPt₃P. Using a solid-state reaction method, we fabricated the Pd-doped superconductor Sr(Pt_1?x Pd _x )₃P.We found that the residual resistivity ρ ₀ increases quickly with Pd doping, whereas the residual resistance ratio (RRR) displays a dramatic reduction. In addition, both the nonlinear field-dependent behavior of the Hall resistivity ρ _xy and the strong temperature dependence of the Hall coefficient R _H at low temperature are suppressed by Pd doping. All the experimental results can be explained by an increase in scattering by impurities induced by doping. Our results suggest that the Pt position is very crucial to the carrier conduction in the present system.     

Anisotropy of the Complex Permittivity of the Kagome-Staircase Compounds Co<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript> and Ni<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript>: Experiment and Ab Initio Calculations

The anisotropy of the components of the complex permittivity of vanadate Co₃V₂O₈ and Co₃V₂O₈ single crystals in the paramagnetic phase are studied by optical ellipsometry in the spectral region 0.5–5.0 eV. Our experimental results support the weak anisotropy of the optical response detected earlier for axes a and c. The optical properties are also investigated along axis b. The properties of both compounds are compared. The optical spectra of both compounds along axis b are shifted toward low energies as compared to axes a and c. The maximum of the main interband absorption band of Co₃V₂O₈ is shifted toward low energies by 0.25–0.3 eV as compared to Co₃V₂O₈. The electronic structure parameters of both compounds are determined. Optical function spectra are analyzed using the results of ab initio band calculations.     

X-Ray Spectral Studies of the Interface Interaction in CuO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/MWCNTs Nanocomposite

Results of a comprehensive study of the interface interaction of a nanostructured CuO_x and multiwalled carbon nanotubes (MWCNTs) in CuO_x/MWCNT nanocomposite by X-ray absorption spectroscopy (XANES, NEXAFS) and X-ray photoelectron spectroscopy (XPS) methods using a synchrotron radiation are presented. It is established that a nanostructured CuO_x in CuO_x/MWCNT nanocomposite is predominantly formed by CuO and has the form of flakelike particles 200–500 nm in size uniformly dispersed over an array of nanotubes. A chemical interaction of CuO_x and nanotubes with formation of covalent carbon–oxygen bonds, which does not lead to a significant destruction of the outer layers of carbon nanotubes, is observed at the interfaces of the nanocomposite.     

Experimental Study and Analysis of Absorption Spectra of Ni<Superscript>2+</Superscript> Ions in Nickel Orthoborate Ni<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>2</Subscript>

The results of studies of the absorption spectra of nickel orthoborate Ni₃(BO₃)₂ in the range of electronic d–d-transitions are reported. The obtained data are analyzed in the framework of the crystal field theory. The Ni²⁺ ions are located in two crystallographically nonequivalent positions 2a and 4f with point symmetry groups C_2h and C₂, respectively, surrounded by six oxygen ions forming deformed octahedra. The absorption spectra exhibit three intense bands corresponding to spin-resolved transitions from the ground state of nickel ion ³A_2g (³F) to the sublevels of the ³T_2g (³F), ³T_1g (³F) and ³T_1g (³P) triplets split by the spinorbit interaction and the rhombic component of the crystal field. At temperatures below 100 K, the spectra exhibit a thin structure, in which phonon-free lines can be distinguished. Comparison of the calculated frequencies of the zero-phonon transitions with the experimental data allows estimating parameters of the crystal field acting on the nickel ions in the 2a- and 4f-positions, as well as the parameters of electrostatic interaction between the 3d electrons and spin-orbit interaction constants.     

Galvanomagnetic properties of atomically disordered Sr<Subscript>2</Subscript>RuO<Subscript>4</Subscript> single crystals

The effect of neutron-bombardment-induced atomic disorder on the galvanomagnetic properties of Sr₂RuO₄ single crystals has been experimentally studied in a broad range of temperatures (1.7–380 K) and magnetic fields (up to 13.6 T). The disorder leads to the appearance of negative temperature coefficients for both the in-plane electric resistivity (ρ_a) and that along the c axis (ρ_c), as well as the negative magnetoresistance Δρ, which is strongly anisotropic to the magnetic field orientation (H ∥ a and H ∥ c), with the easy magnetization direction along the c axis and a weak dependence on the probing current direction in the low-temperature region. The experimental ρ_a(T) and ρ_c(T) curves obtained for the initial and radiation-disordered samples can be described within the framework of a theoretical model with two conductivity channels. The first channel corresponds to the charge carriers with increased effective masses (～10m _e , where m _e is the electron mass) and predominantly electron-electron scattering, which leads to the quadratic temperature dependences of ρ_a and ρ_c. The second channel corresponds to the charge carriers with lower effective masses exhibiting magnetic scattering at low temperatures, which leads to the temperature dependence of the ρ_{a, c}(T) ∝ 1/T type.     

Thermodynamics of the frustrated J<Subscript>1</Subscript>-J<Subscript>2</Subscript> Heisenberg ferromagnet on the body-centered cubic lattice with arbitrary spin

We use the spin-rotation-invariant Green’s function method as well as thehigh-temperature expansion to discuss the thermodynamic properties of the frustratedspin-S J ₁-J ₂ Heisenbergmagnet on the body-centered cubic lattice. We consider ferromagnetic nearest-neighborbonds J ₁<0 and antiferromagnetic next-nearest-neighbor bonds J ₂ ≥ 0 andarbitrary spin S. We find that the transition point\hbox{$J_2^c$}J2cbetween the ferromagnetic ground state and theantiferromagnetic one is nearly independent of the spin S, i.e., it is very closeto the classical transition point\hbox{$J_2^{c,{\rm clas}}= \frac{2}{3}|J_1|$}J2c,clas=23|J1|. At finite temperatures we focus on the parameterregime\hbox{$J_2<J_2^c$}J2<J2cwith a ferromagnetic ground-state. We calculate theCurie temperature T _C (S, J ₂)and derive an empirical formula describing the influence of the frustration parameterJ ₂ and spin S on T _C . We find that theCurie temperature monotonically decreases with increasing frustration J ₂, where veryclose to\hbox{$J_2^{c,{\rm clas}}$}J2c,clasthe T _C (J ₂)-curveexhibits a fast decay which is well described by a logarithmic term\hbox{$1/\textrm{log}(\frac{2}{3}|J_1|-J_{2})$}1/log(23|J1|?J2). To characterize the magnetic ordering below and aboveT _C , we calculate thespin-spin correlation functions ?S ₀ S _R ?, the spontaneous magnetization, the uniform static susceptibilityχ ₀ as well as the correlation lengthξ.Moreover, we discuss the specific heat C _V and the temperaturedependence of the excitation spectrum. As approaching the transition point\hbox{$J_2^c$}J2csome unusual features were found, such as negativespin-spin correlations at temperatures above T _C even though theground state is ferromagnetic or an increase of the spin stiffness with growingtemperature.     

On the hole scattering anisotropy in the PbSb<Subscript>2</Subscript>Te<Subscript>4</Subscript> layered compound from data on the Nernst-Ettingshausen coefficient

Three independent components of the Nernst-Ettingshausen coefficient tensor Q _ikl are experimentally measured for an anisotropic single crystal of the p-PbSb₂Te₄ layered compound. The components Q ₁₂₃ and Q ₁₃₂ are found to be negative, whereas the component Q ₃₂₁ is positive. The experimental data on the anisotropy of the Nernst-Ettingshausen coefficient are discussed together with the available data on the thermopower, the Hall effect, and the electrical conductivity. The analysis demonstrates that the experimental data on the transport effects in p-PbSb₂Te₄ can be explained within a one-band model of the band spectrum and a mixed mechanism of hole scattering under the assumption that scattering from acoustic phonons and scattering from impurity ions are dominant in the cleavage plane and along the c ₃ trigonal axis, respectively.     

Optical properties and mechanisms of current flow in Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films prepared by spray pyrolysis

Thin films Cu₂ZnSnS₄ (up to 0.9 μm thick) with p-type conductivity and band gap E_g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, SnCl₄ · 5H₂O, and (NH₂)₂CS at a temperature T_S = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is E_b ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p₀ = 3.16 × 10¹⁸ cm^–3 and their mobilities in crystallites μ_p = 85 cm²/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ E_g. The density of states at grain boundaries N_t = 9.57 × 10¹¹ cm^–2 has been estimated.     

Specific features of anion transfer in HoF<Subscript>3</Subscript> crystals at high temperatures

The anionic conductivity of HoF₃ single crystals with a β-YF₃ structure (orthorhombic crystal system, space group Pnma) is investigated over a wide range of temperatures (323–1073 K). The unit cell parameters of HoF₃ crystals are as follows: a=0.6384±0.0009 nm, b=0.6844±0.0009 nm, and c=0.4356±0.0005 nm. It is revealed that the conductivity anisotropy of the HoF₃ crystals is insignificant over the entire temperature range covered. The crossover from one mechanism of ion transfer to another mechanism is observed near the critical temperature T_c≈620 K. The activation enthalpy of electrical conduction is found to be ΔH₁=0.744 eV at T<T_c and ΔH₂=0.43 eV at T>T_c. The fluorine vacancies are the most probable charge carriers in HoF₃ crystals. The fluorine ionic conductivities at temperatures of 323, 500, and 1073 K are equal to 5×10^?10, 5×10^?6, and 2×10^?3 S cm^?1, respectively.