晶格失配对InAsχP1-χ/InP发光特性的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,在掺Fe的半绝缘InP衬底上制备了InAs0.157P0.843外延层.利用变温光致发光研究了InAs0.157P0.843外延层在13～300 K温度范围内的发光特性,通过理论分析与计算,证实了在应力作用下InAs0.157P0.843外延层价带顶的轻重空穴带发生了劈裂,并研究了导带底与价带顶轻空穴带之间形成的复合发光峰在应力作用下随温度的变化规律.     

InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响

利用变温光致发光(PL)研究了In0.182Ga0.818As/GaAs应变及应变补偿量子阱在77～300 K温度范围内的发光特性.随着温度T的升高,PL峰位向低能方向移动.在应力作用下In0.182Ga0.818As/GaAs量子阱的价带顶轻空穴带和重空穴带发生了劈裂.通过理论计算推导应变随温度变化对InxGa1-x...     

单轴〈111〉应力硅价带结构计算

基于k·p微扰法计算了单轴〈111〉应力作用下硅的价带结构, 并与未受应力时体硅的价带结构进行了比较. 给出了单轴〈111〉应力作用下硅价带顶处能级的移动、分裂以及空穴有效质量的变化情况. 计算所得未受应力作用时硅价带顶处重空穴带、轻空穴带有效质量与相关文献报道体硅有效质量结果一致. 拓展了单轴应力硅器件导电沟道应力与晶向的选择范围,给出的硅价带顶处重空穴带、轻空穴带能级间的分裂值和有效质量随应力的变化关系可为单轴〈111〉应力硅其他物理参数的计算提供参考. 关键词： 单轴应力硅 k·p法')" href="#">k·p法 价带结构     

利用亮度波形证明固态阴极射线发光

制备了3种结构的器件：A: ITO/SiO₂/Alq₃/Al, B: ITO/Alq₃/SiO₂/Al,C: ITO/SiO₂/Alq₃/SiO₂/Al。对于器件A和B,在正向偏压(ITO接正极)下才能观察到发光;而对于器件C,在正向和反向偏压下都可以观察到发光。随着电压升高,器件B和C产生的蓝色发光相对绿光逐渐增强。这主要是由于SiO₂中的加速电子碰撞激发Alq₃发光层产生热电子,并与空穴形成电子空穴对,复合产生蓝光;而对于器件A,在反向偏压下被热电子碰撞激发出的空穴与正向偏压下从Al电极进入的电子复合形成激子,产生绿色发光。这些结构的器件发光不但可来源于电子与积累的空穴复合,而且也来自固态阴极射线发光。     

钠磷酸盐精细结构的拉曼光谱解析

构建了钠磷酸盐精细结构团簇,应用量子化学从头计算方法,采用闭壳层Hatree-Fock(RHF)方法和6-31G(d, p)基组优化构型,进行了拉曼光谱的模拟计算。引入SIT应力指数标识磷酸盐局部微观精细结构,讨论和分析了磷酸盐在高频区的非桥氧对称伸缩振动的特征谱峰。结果表明SIT值与相应结构特征谱峰的拉曼位移呈良好相关性。采用高温拉曼光谱仪测定了Na₅P₃O₁₀固态及熔体的变温拉曼光谱,观察到了Na₅P₃O₁₀在873～1 073 K间的相变。Na₅P₃O₁₀晶体的微结构单元为Q2₁与Q11₂, 其理论含量比例为2∶1。随着温度升高,Na₅P₃O₁₀的主要峰包中心向低频移动,熔融后体系中出现了Q₀,Q1₁,Q2₁,Q11₂,Q12₂,Q22₂等多种精细结构单元,导致其拉曼光谱的展宽与不对称性的出现。这些概念的建立和运用为磷酸盐熔体及玻璃的拉曼光谱的定量分析奠定了基础。     

应变Si/(001)Si1-xGex空穴有效质量各向异性

基于应变Si/（001）Si_1-xGe_x材料价带E（k）-k关系模型,研究获得了其沿不同晶向的空穴有效质量.结果表明,与弛豫材料相比,应变Si/（001）Si_1-xGe_x材料价带带边（重空穴带）、亚带边（轻空穴带）空穴有效质量在某些k矢方向变化显著,各向异性更加明显.价带空穴有效质量与迁移率密切相关,该研究成 关键词： 应变Si 价带 空穴有效质量     

In0.15Ga0.85As—GaAs应力层多量子阱中束缚子带—连续带跃迁

在10—300K温度范围,研究了稳态发光二极管(LED)辐照对15周期的In_0.15Ga_0.85As(8nm)-CaAs(15nm)应力层多量子阱的光电流谱的影响。各跃迁过程对应的光电流峰的强度随LED光强的增大而减弱,并且具有不同的变化规律。据此可区分出束缚子带和连续带间的跃迁及其亚结构,并由跃迁的能量位置,直接确定导带和价带的不连续量,得出重空穴价带的能带台阶Q_v=0.38±0.01。 关键词：     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.     

基于MADN空穴传输层的双层结构高效率黄绿光OLED及其阻抗谱分析

以MADN为空穴传输层,主-客掺杂体系[Alq₃∶0.7 Wt%rubrene]为发光兼电子传输层,构建了双层结构的高效率黄绿光OLED器件。该器件的黄绿光由主发光体Alq₃通过不完全能量转移到客发光体rubrene实现,电致发光峰值位于560 nm,1931CIE色坐标为(0.46, 0.52),最大发光效率达到了7.63 cd·A-1,比相应的NPB做空穴传输层的双层结构器件提高了30%。通过构建以MADN或NPB为空穴传输层的空穴单载流子器件并进行阻抗谱分析,结果表明MADN可以作为一种非常有效的空穴传输层,其空穴迁移性略低于NPB,这恰好弥补了OLED器件中空穴迁移比电子迁移快这一缺陷,为改善OLED发光层中载流子的平衡性创造了条件,从而提高了器件的发光效率。此外,MADN做空穴传输层的双层结构OLED的发光效率与传统三层结构器件(MADN和Alq₃分别作为空穴传输层和电子传输层)基本相当,表明了这种双层结构器件在简化器件结构的同时并不以牺牲发光效率为代价,发光层[Alq₃∶0.7 Wt%rubrene]兼具有优良的电子传输性能。     

基于在聚合物中掺杂染料DCJTB的白色有机电致发光器件

将Alq₃和DCJTB作为掺杂物与基质PVK按照不同比例混合共溶,旋涂成膜,制备了PVK∶Alq₃∶DCJTB为发光层的结构为ITO/ PVK∶Alq₃∶DCJTB/ BCP/Alq₃/LiF/Al的器件,其中Alq₃和BCP分别用作电子传输层和空穴阻挡层,PVK用作蓝光发光层和空穴传输层。保持PVK和DCJTB的质量比为100∶1不变,改变PVK和 Alq₃的质量比,当PVK和Alq3的质量比为20∶1时,得到了效果较好的白光。器件在电压为14 V时,色坐标达到(0.33,0.36),在10～14 V范围内变化甚微。     

Spin Kinetics in Low-Dimensional Semiconductor Systems

Spin kinetics in low-dimensional semiconductor systems was investigated spectroscopically. In the structures, owing to the quantum confinement, the degeneracy of the heavy-hole (HH) and light-hole valence bands was removed. Semiconductor systems were pumped for governing transitions from the HH valence band to the conduction band for the generation of the conduction-band-electron spins, and a maximum ～80% initial spin polarization was obtained in the systems at liquid helium temperature. Distinct spin oscillations and polarization decay were also observed. Spin kinetics of the drifting electrons was studied as a function of the external magnetic field as well as that of the system temperature in the exact Voigt configuration.     

Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset ΔE_ccould be separated from the valence band offsets, since in a 32 monolayer (ML) barrier sample, the splitting between the heavy-hole exciton transitions is solely determined by ΔE_c. Knowing ΔE_c, the heavy-hole (hh) and light-hole (lh) band offsets ΔE_hhand ΔE_lhcould subsequently be determined from the coupling-induced shift and splitting in samples with a 16, 8 and 4 ML barrier. We find a conduction band offset of 535 meV, a conduction band offset ratio ofQ_c= 0.58 and a strain induced splitting between the hh and lh subbands of 160 meV.     

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and threedimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.     

Two-carrier transition in radiative recombination of two-dimensional electrons in GaAs/AlGaAs

We observed photoluminescence (PL) and photoluminescence excitation (PLE) spectra due to shake-up processes of recombination of two-dimensional electrons and free excitons in a modulation-doped GaAs quantum well at He temperatures. One of the processes is that when an electron recombines with a hole, another electron is excited from the conduction band in GaAs to that in AlGaAs. The other process is that a hole is excited from an acceptor level or the valence band in GaAs to the valence band in AlGaAs during recombination. The electron process is observed in both PL and PLE spectra while the hole process only in the PL spectra. The excitation-intensity dependence of the peak intensity of hole-excited PL is almost quadratic, indicating three-carrier process in the shake-up process. The band offsets of the conduction and valence bands are estimated to be 220 and 146 meV, respectively.     

Modification of surface states in ultrathin films via hybridization with the substrate: a study of Ag on Ge

The Shockley surface state of Ag(111) develops unusual band dispersion relations for Ag films of decreasing thicknesses on Ge(111), as observed by angle-resolved photoemission. Its parabolic dispersion in the thick-film limit shifts toward higher binding energies and splits into multiple bands with dispersions that reflect the valence band structure of Ge including the heavy-hole, light-hole, and split-off bands. The results are explained in terms of a hybridization interaction between the Ag surface state and the Ge substrate states.     

N-Composition and Pressure Dependence of the Inter Band Transitions of Ga(N,As)/GaAs Quantum Wells

A series of GaN x As 1 m x /GaAs quantum well structures with well widths of about 20 nm and x varying between 1% and 3.5% has been grown by metal-organic vapour phase epitaxy. We have studied the evolution of the quantum well states under hydrostatic pressure up to 20 kbar at 300 K by photomodulated reflectance (PR) spectroscopy. The energy positions of the quantum well transitions have been obtained by fitting the PR spectra. The pressure dependence of the allowed heavy-hole transitions e n hh n decreases with increasing n . This directly reflects the strong non-parabolic dispersion of the conduction band originating from the interaction of the N-impurity level with the bands of the GaAs host. The fitted energy positions and their pressure dependence can be well described by a 10 band k.p model. The observed splitting between the lowest light-hole and heavy-hole transitions are in agreement with a type I band alignment.     

Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells

Magneto-optical investigations of a series of strain-balanced InGaAs/GaAlInAs coupled quantum wells are described, showing how changes in the strain within the InGaAs wells modify the conduction and valence-band dispersion curves. Large non-parabolicities in both bands are demonstrated by comparison of measured and calculated excitonic Landau levels. Increasing tensile strain within the wells results in the heavy-hole in-plane mass changing from a very high value to less than 0.2m₀as the first light-hole confined level shifts to an energy above that of the first heavy-hole state.     

Optical investigations of Zn,Hg and Li doped GaN

The use of infrared quenching of photoluminescence to study the spectral dependence of the photoionization cross-section in GaN doped with Zn, Hg, and Li is reported. It is shown that these impurities produce deep level centres 0.48 eV, 0.41 eV, and 0.75 eV, respectively, above the valence band. In addition, excitation spectra are investigated for Zn and Li doped GaN, giving values of 3.17 eV and 2.86 eV at 78 K for the energy distance of these levels from the conduction band. Finally, from the temperature dependence of the excitation spectra, it is concluded that the levels are probably pinned to the valence band.     

First resonant tunneling via a light-hole ground state

We report the demonstration of resonant tunneling of light-holes through an AlAs/GaAs P double-barrier heterostructure. The tensile strain in the quantum well reverses the order of the light- and heavy-hole levels, the first light-hole level becoming the ground state. The characteristics are measured at different temperatures and compared to those of a standard AlAs/GaAs unstrained structure. The peak current density of the first light-hole resonance and its peak-to-valley current ratio are enhanced. They reach 28 A/cm and 3.4 : 1 at 15 K. A negative differential resistance is observed up to 250 K.