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1.
用分子束外延在GaAs衬底上生长了CdSe/CdMnSe多量子阱结构.利用X射线衍射(XRD)、变密度激发的PL光谱、变温度PL光谱和变密度激发的ps时间分辨光谱研究了CdSe/CdMnSe多量子阱结构和激子复合特性.讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的.在该材料中观测到激子激子散射发射峰,它被变密度激发和变温度PL光谱所证实. 关键词: CdSe/CdMnSe 量子阱 光学性质  相似文献   

2.
报道了分子束外延制备的高质量CdTe/Cd0.64Zn0.36Te多量子阱结构的光学性质,由变温光致发光光谱讨论了随温度升高辐射线展宽和辐射复合效率降低的机理.在变密度激发的皮秒时间分辨光谱中,发现不同激发密度下发光衰减时间不同,并研究了它的机理.在高激发密度下观测到n=2的重空穴激子发光. 关键词:  相似文献   

3.
利用MOCVD技术在GaAs衬底上外延生长了非对称量子阱结构CdSe/ZnSe材料,通过对其稳态变温光谱及变激发功率光谱,研究了其发光特性。稳态光谱表明:在82~141K时,观测到的两个发光峰来源于不同阱层厚度的量子阱激子发光,用对比实验验证了高能侧发光的来源。宽阱发光强度先增加后减小,将其归结为激子隧穿与激子热离化相互竞争的结果。通过Arrhenius拟合,对宽阱激子热激活能进行了计算。82K时变激发功率PL光谱表明:由于激子隧穿的存在,使得窄阱发光峰位不随激发功率变化而变化,宽阱发光峰位随激发功率增加发生了蓝移,并对激子隧穿进行了实验验证。  相似文献   

4.
张希清  徐征等 《光子学报》2000,29(Z1):317-320
用分子束外延在GaAs衬底上生长了CdSe/CdMnSe多量子阱结构。利用X射线衍射(XRD)、低激发密度下的PL光谱和变密度激发的ps时间分辨光谱研究了CdSe/CdMnSe多量子减时间不同,认为它的机理可能是无辐射复合引起的。  相似文献   

5.
在不同晶格温度和不同激发光强度下,测量了四元系GaInAsSb/GaAlAsSb单量子阱中自由激子的荧光光谱,导出了稳态光谱测量条件下自由激子荧光强度与激发光强度和晶格温度的一般性公式.计算结果表明,激子相对占有数引起的温度和密度效应会影响激子发光的强度关系.根据本文的简单模型,线性比例系数I/I0实际上综合地反映了量子阱中自由激子的荧光效率,而从激子荧光强度的Arrhenius图的最佳拟合中不仅可以得到激子的束缚能和激活能,而且还能估计出量子阱材料的本底浓度和散射时间常数. 关键词:  相似文献   

6.
于广友  范希武 《发光学报》1997,18(3):199-204
本文主要研究浅ZnCdSe/ZnSe单量子阱在77K温度下的光致发光。在不同激发密度下,讨论了该结构的发光机制,把77K温度下的受激发射归结为是激子-激子散射所引起的。文中还分析了在浅ZnCdSe/ZnSe量子阱中能够实现与激子相关的受激发射的原因。  相似文献   

7.
利用变温和变激发功率分别研究了不同厚度CdSe阱层的自组织CdSe量子点的发光。稳态变温光谱表明:低温下CdSe量子阱有很强的发光,高温猝灭,而其表面上的量子点发光可持续到室温,原因归结于量子点的三维量子尺寸限制效应;变激发功率光谱表明:量子点激子发光是典型的自由激子发光,且在功率增加时。宽阱层表面上的CdSe量子点有明显的带填充效应。通过比较不同CdSe阱层厚度的样品的发光,发现其表面上量子点的发光差异较大,这可以归结为阱层厚度不同导致应变弛豫的程度不同,直接决定了所形成量子点的大小与空间分布[1]。  相似文献   

8.
范希武 《发光学报》2002,23(4):317-329
本文系自1979年以来,宽带Ⅱ-Ⅵ族半导体研究组取得的主要研究成果的简要介绍。取得的主要研究成果可分为如下六个方面:第一,系统地研究了宽带Ⅱ-Ⅵ族半导体在电场激发下的自由激子发射;第二,创造性地提出并实 利用宽带Ⅱ-Ⅵ族超晶格的室温激子效应来实现在蓝绿区快响应的光学双稳的物理思想;第三,深入研究了宽带Ⅱ-Ⅵ族超晶格中的激子行为以及激子与元激发态的相互作用,为利用激子获得有效蓝色自发和受激发射提供物理基础和实验途径;第四,研究了ZnSe基非对称双量子阱和组合超晶格中激子的隧穿以及激子的自发和受激发射;第五,CdSe和ZnSeS自组装量子点的生长及其形成机理;第六,ZnO薄膜的生长及其紫外发射特性。  相似文献   

9.
闫海珍  程成  张庆豪 《发光学报》2008,29(1):166-170
测量了分散于正己烷溶液和甲苯溶液中的CdSe/ZnS量子点在室温到近溶液沸点温度间的吸收与光致发光光谱,比较了两种不同的CdSe/ZnS量子点的光谱特性,讨论了温度对吸收和光致发光光谱峰值波长以及相对强度的影响。结果表明:在25~100℃范围内,CdSe/ZnS量子点激子吸收峰波长有微小红移,最大约为4nm;光致发光光谱峰值波长略有红移,但最大不超过6nm。根据光致发光光谱测量的结果,确定了Varshni定律中关于CdSe/ZnS量子点禁带宽度的两个经验参数:α=(2.0±0.2)×10-4eV/K和β=(200±30)K。温度对CdSe/ZnS量子点吸收强度影响不大,荧光发射强度与温度呈线性关系增强。  相似文献   

10.
吕有明  范希武 《发光学报》1990,11(4):255-263
本文首次在77K温度的电致发光光谱上,观测到了自由激子和自由激子(Ex-Ex)散射的发射带P。根据半经典理论,得到CdS单晶在高激发密度下的激子有效温度高于晶格温度。并且在77K温度下,通过氮分子激光器3371Å谱线的激发,观察到了Ex-Ex散射的P带的受激发射现象。  相似文献   

11.
用分子束外延在GaAs衬底上生长了ZnCdSe/ZnSe多量子阱结构.利用X射线衍射(XRD)、变温度PL光谱和ps发光衰减等研究了ZnCdSe/ZnSe多量子阱结构和激子复合特性.由变温PL光谱讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.  相似文献   

12.
CdSe and CdS films, deposited on a sapphire substrate by means of pulsed laser ablation technique, have been investigated by means of reflectivity and photoluminescence measurements in order to study the effect of such a transparent substrate on the optical properties of the deposited epilayers. The reflectivity spectra at low temperature have been studied by means of an analytical model which permits one to obtain the energies of the excitonic resonances. The photoluminescence spectra show that our CdSe and CdS films present excitonic emission at low temperature, differently from the same films deposited on quartz. The temperature dependence of the excitonic energy has been analysed by taking into account the contribution of both the thermal expansion and electron-phonon interaction. The exciton linewidth has been analysed according to well known phenomenological models. Received 21 June 2001 and Received in final form 18 November 2001  相似文献   

13.
A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16±1.5 meV was determined from the Arrhenius analysis.  相似文献   

14.
The method of molecular layering is used to prepare CdS thin films and CdS/ZnS and CdS/CdSe superlattices. The dependence of the exciton photoluminescence on film thickness is studied, and the role of internal strains is examined. The effect of the excitation intensity on the superlattice photoluminescence spectra is examined, manifested in a shift of the emission maximum toward shorter wavelengths when this intensity is increased. Fiz. Tverd. Tela (St. Petersburg) 40, 820–821 (May 1998)  相似文献   

15.
Mono-dispersed CdSe quantum dots have been prepared by water based route using 2-mercaptoethanol at low temperatures. The structures of the CdSe nanocrystals were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The XRD pattern showed that the prepared CdSe has a cubic phase with zinc blende structure. The temporal evolution of the absorption and photoluminescence spectra was used to follow the reaction process and to characterize the optical properties of the prepared CdSe quantum dots. The results exhibited clear exciton peaks in the absorption spectra. The influence of the temperature and/or time of reaction on the properties of the CdSe nanocrystals were investigated. It is found that the size of CdSe nanoparticles increases, as the reaction temperature and/or time are increased. The results showed that the Stokes shift between photoluminescence emission peak and absorption peaks is increased with the increase of the reaction temperature.  相似文献   

16.
II–VI strained-layer superlattices are very efficient emitters of visible light. The dependence of the luminescence intensity on the excitation power density allows us to characterise the recombination processes involved in the emission. At low temperatures excitonic processes are dominant whereas electron-hole recombinations feature at room temperature. No special evidence of the dual nature of the emission is observed at intermediate temperatures because the optical transitions are broadened by well-width fluctuations. In spite of this we may estimate the exciton binding energy from the temperature dependence of the photoluminescence intensity, as long as the photoluminescence remains excitonic. This is the case for narrow wells in CdS---ZnS superlattices over the temperature range zero to room temperature. The estimated exciton binding energy measured in this way approaches the two dimensional limit but does not exceed it.  相似文献   

17.
高质量ZnO及BeZnO薄膜的发光性质   总被引:3,自引:1,他引:2       下载免费PDF全文
用分子束外延设备插入缓冲层在c面蓝宝石上生长得到高质量ZnO和BeZnO薄膜。XRD测试显示薄膜具有六方结构和c轴取向,并具有良好的晶体质量,其中ZnO薄膜的半高宽仅为108 arcsec,BexZn1-xO薄膜的半高宽小于600 arcsec。对ZnO和BeZnO薄膜的拉曼光谱进行对比研究发现,随着Be元素的掺入,A1(LO)、A1(2LO)声子模频率往大波数方向移动,并且首次发现了与Be元素掺杂有关的局域振动模。利用变温光致发光光谱研究了薄膜的发光性质,结果显示ZnO薄膜室温光致发光只出现一个紫外发发光峰(378 nm),而低温光谱(80 K)则出现了很强的自由激子发光峰。随着温度的升高,束缚激子发光逐渐湮灭向自由激子发光转变,并且峰值位置红移。相对于ZnO薄膜,BeZnO薄膜的紫外发光主峰位置蓝移,并且由于Be元素的掺入导致薄膜晶体质量下降,在低温(80 K)光致发光光谱中没有出现强的自由激子发光峰。另外,在低温光致发光及拉曼光谱中,主峰位置在100~200 K之间有局部最大值,推测为由于合金晶格热膨胀系数失配而引起的应力效应。  相似文献   

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