Spatial characteristics of nanosecond pulsed micro-discharges in atmospheric pressure He/H2O mixture by optical emission spectroscopy

Atmospheric pressure micro-discharges in helium gas with a mixture of 0.5%water vapor between two pin electrodes are generated with nanosecond overvoltage pulses.The temporal and spatial characteristics of the discharges are investigated by means of time-resolved imaging and optical emission spectroscopy with respect to the discharge morphology,gas temperature,electron density,and excited species.The evolution of micro-discharges is captured by intensified CCD camera and electrical properties.The gas temperature is diagnosed by a two-temperature fit to the ro-vibrational OH(A²Σ⁺–X^П(2),0–0)emission band and is found to remain low at 425 K during the discharge pulses.The profile of electron density performed by the Stark broadening of Ha 656.1-nm and He I 667.8-nm lines is uniform across the discharge gap at the initial of discharge and reaches as high as 10²³m^-3.The excited species of He,OH,and H show different spatio-temporal behaviors from each other by the measurement of their emission intensities,which are discussed qualitatively in regard of their plasma kinetics.     

Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.     

Temperature-Dependent Defect-Induced New Emission in ZnSe Crystal

The temperature-dependent photoluminescence behaviour of chemical vapour transport （CVT）-grown ZnSe crystal is investigated. A new emission band appears when temperature is reduced to 155K. It is shown that the new emission band is strongly related to defect emission peaked at around 2.1 eV. The emergence of the new emission band is accompanied by decreasing emission intensity of free exciton, as well as redshiR of defect emission with temperature decreases. The activated energy of the defect state is estimated to be 60.6 meV, which is approximately equal to the energy difference between the new emission and the free exciton emission at 155K.     

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.     

Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition. The macro-PL spectra exhibit three emission peaks at 1361, 1280 and 1204nm, corresponding to the ground level （GS）, the first excited state （ES1） and the second excited state （ES2） of the QDs, respectively, which are obtained when the GaAs capping layer is grown using triethylgallium and tertiallybutylarsine. As a result of micro-PL, only a few peaks from individual dots have been observed. The exciton-biexciton behaviour was clearly observed at low temperature.     

Counter-Rotating Transition Mediated Coherent Effects in Spontaneous Emission in a Three-Level Atom

The coherent effects including counter-rotating coupling on spontaneous emission are presented for a microwave driven V-type three-level atom. Novel coherent effects are realized： （i） There is an infinite series of spectral lines, which are separated by the microwave frequency, independent of the separation of the excited states, no matter whether the microwave transition is resonant or not. This is in sharp contrast to the case of the weak coupling, where the spectral interval is mainly determined by the separation of the excited states. （ii） Selective appearance and inhibition of the spectral lines are obtained simply by varying the microwave Rabi frequency. （iii） Spectral lines have a twofold structure. The physical mechanisms are analysed by employing the dressed states representation.     

Radiative decay from doubly to singly excited states of He via generalization of Laguerre-type orbitals： A non-orthogonal formalism

By taking full account of the non-orthogonality of the orbitals between the low-lying doubly excited states ^1po and the singly excited states ^1S^e and ^1D^e of He, the corresponding radiative decay rates have been investigated theoretically via analytic generalized Laguerre-type atomic orbitals at a nearly numerical multi-conflguration self-consistent field accuracy in a general non-orthogonal configuration interaction scheme. From these rates, we calculate the VUV photon emission and metastable atom spectra, and both are found to be in good qualitative agreement with recent excellent measurements. We obtain, successfully, the enhancement of the VUV photon spectrum, experimentally observed at the energy of （2s4p-4s2p）/（2p,3d） ^1po as compared with other nearby lying states. The mechanism proposed by Odling-Smee et al is verified, implying that taking appropriate account of the overlap existing between orbitals of the low-lying doubly excited and singly excited states （especially important for the compact orbitals） can reveal basic physical dominant mechanism and is crucial in understanding these spectra.     

Photoluminescence evolution in self-ion-implanted and annealed silicon

Si+ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950 C and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs).Plentiful optical features are observed and identified clearly in these PL curves.The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks.Several characteristic features,such as an R line,S bands,a W line,the phonon-assistant W TA and SiTO peaks,can be detected in the PL spectra of samples annealed at different temperatures.For the samples annealed at 800 C,emission peaks from the dislocations bounded at the deep energy levels of the forbidden band,such as D1 and D2 bands,can be observed at a temperature as high as 280 K.These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures.The deactivation energies of the main optical features are extracted from the PL data at different temperatures.     

Characteristics of a large gap uniform discharge excited by DC voltage at atmospheric pressure

A large-gap uniform discharge is ignited by a coaxial dielectric barrier discharge and burns between a needle anode and a plate cathode under a low sustaining voltage by feeding with flowing argon. The basic aspects of the large-gap uniform discharge are investigated by optical and spectroscopic methods. From the discharge images, it can be found that this discharge has similar regions with glow discharge at low pressure except a plasma plume region. Light emission signals from the discharge indicate that the plasma column is invariant with time, while there are some stochastic pulses in the plasma plume region. The optical emission spectra scanning from 300 nm to 800 nm are used to calculate the excited electron temperature and vibrational temperature of the large-gap uniform discharge. It has been found that the excited electron temperature almost keeps constant and the vibrational temperature increases with increasing discharge current.Both of them decreases with increasing gas flow rate.     

Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells

This paper studies the dynamics of intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells(MQW) with doping at the centre by time-resolved pump-probe spectroscopy using a picosecond free electron laser for infrared experiments.Low temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of the Be acceptor from the ground state to the first three odd-parity excited states respectively.The pump-probe experiments are performed at different temperatures and different pump pulse wavelengths.The hole relaxation time from 2p excited state to 1s ground state in MQW is found to be much shorter than that in bulk GaAs,and shown to be independent of temperature but strongly dependent on wavelength.The zone-folded acoustic phonon emission and slower decay of the wavefunctions of impurity states are suggested to account for the reduction of the 2p excited state lifetime in MQW.The wavelength dependence of the 2p lifetime is attributed to the diffusion of the Be atom δ-layer in quantum wells.     

白光LED用红色荧光粉Sr2EuxGd1-xAlO5的制备及其发光性质

用高温固相反应法合成了Sr₂Eu_xGd_1-xAlO₅红色荧光粉,研究了荧光粉的晶体结构和发光性质。在紫外光和近紫外光激发下,样品的发射光谱由Eu³⁺的⁵D₀→⁷F_J(J=0,1,2,3,4) 特征发射组成,其中Eu³⁺离子的⁵D₀→⁷F₁(λ=590 nm)和⁵D₀→⁷F₂(λ=622 nm)跃迁发射的强度最大。当Eu³⁺离子的摩尔分数为 0.75时,样品的发光最强。研究结果表明,Sr₂Eu_xGd_1-xAlO₅荧光粉是一种在近紫外芯片白光LED上有应用前景的红光荧光粉。     

Gallium and indium co‐doped ZnO thin films for white light emitting diodes

Ga and In co‐doped ZnO (GIZO) thin films together with ZnO, In‐doped ZnO (IZO), Ga‐doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning glass and boron doped Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the current–voltage characteristics showed relatively lower turn‐on voltage and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) with a correlated colour temperature of 6650 K, indicating a cool white light, and establishing a possibility of white light emitting diodes. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

CaLuBO4∶Tb^3+荧光粉的制备及发光性质

采用高温固相反应法合成了不同Tb^3+掺杂浓度的CaLuBO4∶xTb^3+荧光粉,研究了样品的晶体结构和发光性质。在紫外光激发下,样品的发射光谱由Tb3+离子的5D3→7FJ(J=6,5,4)和5D4→7FJ′(J′=6,5,4,3)特征发射组成,其中位于545 nm和554 nm附近的5D4→7F5跃迁发射强度最大。荧光粉的激发光谱是由位于紫外区的Tb3+的4f-5d和f-f跃迁构成的。研究了Tb3+浓度对样品发光性质的影响。测量并分析了CaLuBO4∶xTb^3+荧光粉的5D3能级和5D4能级荧光寿命。结果表明,CaLuBO4∶xTb^3+是一种适于紫外激发的新型黄绿光荧光粉。     

以蓝色发光材料DPVBi为基质的白色发光器件

白色有机发光器件是实现彩色平板显示的重要方案之一。利用蓝色发光材料DPVBi[4，4′—(2，2—苯乙烯基)—1，1′—联苯]掺杂红光染料DCJTB[4—氰甲烯基—2—叔丁基—6—(1，1，7，7—四甲基久洛尼定基—9—烯炔基—4H—吡喃)]作发光层制备了白色发光器件。研究了DPVBi掺杂不同浓度IDCJTB薄膜的光致发光性质，根据光致发光结果，制备了以DPVBi掺杂不同浓度DCJTB作发光层的电致发光器件，其结构为ITO／GuPc／NPB／DPVBi：DCJTB／Alq3／LiF／Al。当DCJTB质量分数为0．0008时，器件实现了白色发光(色度x=0．25，y=0．32)，电致发光和光致发光的掺杂比例基本相符，表明器件的白色发光主要是由基质DPVBi向掺杂剂DCJTB的能量传递产生的。研究还发现：白色器件随电压升高，光谱中蓝色成分相对于红色成分的比例略有增加，文章对此现象进行了分析。该白光器件在14V时达到最高亮度7822cd／cm^2，在20mA／cm^2电流密度下的亮度为-489cd／cm^2，最大流明效率为1．75lm／W。     

M_2Eu_xLn_(1-x)AlO_5(M=Ca,Sr,Ba,Ln=La,Gd,Lu)红色荧光粉发光性质的研究

用高温固相反应法合成了M_2Eu_xLn_(1-x)AlO_5(M=Ca,Sr,Ba,Ln=La,Lu,Gd)荧光粉,研究了荧光粉的发光性质。在紫外光和近紫外光激发下,样品的发射光谱由Eu~(3+)的5D0→7FJ(J=0,1,2,3,4)特征发射组成。其中Eu3+离子位于590 nm附近的5D0→7F1和位于620 nm附近的5D0→7F2跃迁发射的强度最强。荧光粉的激发光谱都是由O~(2-)-Eu~(3+)电荷迁移带和Eu~(3+)的f-f跃迁构成的。M_2Eu_xLa_(1-x)AlO_5(M=Ca,Sr,Ba)的O2--Eu~(3+)的电荷迁移带的峰位按Ca、Sr、Ba顺序向长波方向移动。研究了用La、Gd和Lu替代M_2Eu_xLn_(1-x)AlO_5中Ln的位置对样品发光的影响。给出了Eu~(3+)浓度对发光强度的影响。分析了M_2Eu_xLn_(1-x)AlO_5和M_2Eu_xLn_(1-x)AlO_5的荧光寿命。     

Structural and photoluminescence properties of terbium-doped zinc oxide nanoparticles

We present in this paper a study of the structural and photoluminescence （PL） properties of terbium （Tb） doped zinc oxide （ZnO） nanoparticles synthesized by a simple low temperature chemical precipitation method, using zinc acetate and terbium nitrate in an isopropanol medium with diethanolamine （DEA） as the capping agent at 60 ℃. The as-prepared samples were heat treated and the PL of the annealed samples were studied. The prepared nanoparticles were characterized with X-ray diffraction （XRD）. The XRD patterns show the pattern of typical ZnO nanoparticles and correspond with the standard XRD pattern given by JCPDS card No. 36-1451, showing the hexagonal phase structure. The PL intensity was enhanced due to Tb^3＋ doping, and it decreased at higher concentrations of Tb^3＋ doping after reaching a certain optimum concentration. The PL spectra of Tb^3＋ doped samples exhibited blue, bluish green, and green emissions at 460 nm （5^D3 - 7^F3）, 484 nm （5^D4 - 7^F6）, and 530 nm （5^D4 - 7^F5）, respectively, which were more intense than the emissions for the undoped ZnO sample. Based on the results, an energy level schematic diagram was proposed to explain the possible electron transition processes.     

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal–organic chemical vapor deposition

Metal-organic chemical vapor deposition （MOCVD） grown ferromagnetic GaMnN films are investigated by photo- luminescence （PL） measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% （[Mn]A =0.75%） but its PL intensity is stronger than other samples＇. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3＋ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.     

Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes

In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance.     

Characterization and luminescence of Eu/Sm-coactivated CaYAl3O7 phosphor synthesized by using a combustion method

A novel red-emitting phosphor, CaYAl3O7 : Eu 3+ , Sm3+ , is synthesized by a combustion method at a low temperature (850℃), and the single phase of CaYAl3O7 is confirmed by powder X-ray diffraction measurements. The photoluminescence property results reveal that the red emission intensity of Eu3+ is strongly dependent on the Sm3+ concentration. Only the Eu 3+ luminescence is detected in the Eu 3+ -Sm3+ co-doped CaYAl3O7 phosphor with 393 nm excitation. However, under the characteristic excitation (402 nm) of Sm3+ , not only the Sm3+ emission but also the Eu 3+ emission are observed. A possible mechanism of the energy transfer between Sm3+ and Eu 3+ is investigated in detail.     

Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

The photoluminescence （PL） characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.