Electromagnetic Transition Strengths and New Insight into the Chirality in ^106Ag

Excited states in ^106Ag are populated through the heavy-ion fusion evaporation reaction ^100Mo（ll B,5n）^106Ag at a beam energy of 60MeV. Lifetimes are measured for transitions of the two negative-parity rotational bands in the nucleus ^106Ag. The reduced transition probabilities show a great difference between the two bands. The staggering of the B（M1） and B（M1）/B（E2） values with spin are not observed. The bands are identified to be built on two distinct quasiparticle configurations. These results are contrary to an earlier suggestion that the pair of bands in ^106Ag are chiral doublet bands.     

Pits and adatoms at the interface of 1-ML C84/Ag （111）

We prepare a well-defined C84 monolayer on the surface of Ag （111） and study the geometric structure by scanning tunneling microscopy （STM）. The C84 molecules form a nearly close-packed incommensurate R30° lattice. The lattice is long-distance ordered with numerous local disorders. The monolayer exhibits complex bright/dim contrast; the largest height difference between the molecules can be greater than 0.4 nm. Annealing the monolayer at 380 ℃ can desorb part of the molecules, but more than sixty percent molecules stay on the Ag （111） surface even after the sample has been annealed at 650 ℃. Our analyses reveal that the 7-atom pits form beneath many molecules. Some other molecules sit at the 1-atom pits. Ag adatoms （those removed substrate atoms, accompanying the pit formation） play a very important role in this system. The adatoms can either stabilize or destabilize the monolayer, depending on the distribution manner of the adatoms at the interface. The distribution manner is determined by the co-play of the following factors： the dimension of the interstitial regions of the C84 overlayer, the number of the adatoms, and the long-distance migration of part adatoms.     

Energy band structure in optical of spin-1 condensates lattices

The energy band structure of spin-1 condensates with repulsive spimindependent and either ferromagnetic or antiferromagnetic spin-dependent interactions in one-dimensional （1D） periodic optical lattices is discussed. Within the two-mode approximation, Bloch bands of spin-1 condensates are presented. The results show that the Bloch bands exhibit a complex structure as the atom density of mF = 0 hyperfine state increases： bands splitting, reversion, intersection and loop structure are excited subsequently. The complex band structure should be related to the tunneling and spin-mixing dynamics.     

Electronic,optical properties,surface energies and work functions of Ag8SnS6: First-principles method

Ternary metal chalcogenide semiconductor Ag8Sn S6,which is an efficient photocatalyst under visible light radiation,is studied by plane-wave pseudopotential density functional theory.After geometry optimization,the electronic and optical properties are studied.A scissor operator value of 0.81 e V is introduced to overcome the underestimation of the calculation band gaps.The contribution of different bands is analyzed by virtue of total and partial density of states.Furthermore,in order to understand the optical properties of Ag8Sn S6,the dielectric function,absorption coefficient,and refractive index are also performed in the energy range from 0 to 11 e V.The absorption spectrum indicates that Ag8Sn S6has a good absorbency in visible light area.Surface energies and work functions of(411),(4 13),(21 1),and(112)orientations have been calculated.These results reveal the reason for an outstanding photocatalytic activity of Ag8Sn S6.     

Characterization of Ag adsorption on TiC（001） substrate： an ab initio study

Ag adsorptions at 0.25-3 monolayer （ML） coverage on a perfect TIC（001） surface and at 0.25 ML coverage on C vacancy are separately investigated by using the pseudopotential-based density functional theory. The preferential adsorption sites and the adsorption-induced modifications of electronic structures of both the substrate and adsorbate are analysed. Through the analyses of adsorption energy, ideal work of separation, interface distance, projected local density of states, and the difference electron density, the characteristic evolution of the adatom-surface bonding as a function of the amount of deposited silver is studied. The nature of the Ag/TiC bonding changes as the coverage increases from 0.25 to 3 MLs. Unlike physisorption in an Ag/MgO system, polar covalent component contributes to the Ag/TiC interfacial adhesion in most cases, however, for the case of 1-3 ML coverage, an additional electrostatic interaction between the absorption layer and the substrate should be taken into account. The value of ideal work of separation, 1.55 J/m^2, for a 3-ML-thick adlayer accords well with other calculations. The calculations predict that Ag does not wet TIC（001） surface and prefers a three-dimensional growth mode in the absence of kinetic factor. This work reports on a clear site and coverage dependence of the measurable physical parameters, which would benefit the understanding of Ag/TiC（001） interface and the analysis of experimental data.     

High-Quality FeTe_(1-x)Se_x Monolayer Films on SrTiO_3(001) Substrates Grown by Molecular Beam Epitaxy

We report the growth process of FeTe_(1-x)Se_(0≤x≤≤1) monolayer films on SrTiO_3(STO) substrates through molecular beam epitaxy and discuss the possible ways to improve the film quality. By exploring the parameters of substrate treatment, growth control and post growth annealing, we successfully obtain a series of FeTe_(1-x)Se_x monolayer films. In the whole growth process, we find the significance of the temperature control through surface roughness monitored by the reflection high-energy electron diffraction and scanning tunneling microscopy. We obtain the best quality of FeSe monolayer films with the STO substrate treated at T = 900-950°C before growth,the FeSe deposited at T = 310°C during growth and annealed at T = 380°C after growth. For FeTe_(1-x)Se_x(x1), both the growth temperature and annealing temperature decrease to T = 260℃. According to the angleresolved photoemission spectroscopy measurements, the superconductivity of the FeTe_(1-x)Se_x film is robust and insensitive to Se concentration. All the above are instructive for further investigations of the superconductivity in FeTe_(1-x)Se_x films.     

Observation of a Flat Band in Silicene

Flat bands that exhibit weak band dispersion in crystals can host heavy fermions that are cru- cial to many strongly correlated phenomena, such as ferromagnetism and superconductivity. For topologically trivial flat bands, theories have proven the stability of the ferromagnetic ground state i.e., flat band ferromagnetism. In the presence of weak disorders, systems with flat bands are expected to exhibit unconventional Anderson localization due to the lifting of degeneracy. More interestingly, flat bands with nontrivial topology, i.e., topological flat bands, are expected to host a fractional quantum Hall effect at zero magnetic field. Hence, searching for topologically trivial/nontrivial flat bands （TFB） has been an interesting while challenging task so far.     

A theoretical study of the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110）

A multiple-scattering chtster method is employed to calculate the oxygen K-edge near-edge X-ray absorption fine structure of N20/Ir（110） and its monolayer. Two peaks and one weak resonance appear in both cases. The self- consistent field DV-Xa calculations of the peaks and resonance show that the physical origin of the pre-edge peak x is different from those of the main peak 1 and the other weak resonance al. This setup is intrinsic to the N20 monolayer, owing to the interaction between the neighbouring molecular chains in the monolayer and partly to the adsorbed atomic oxygen, according to both the theoretical and experimental data.     

Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.     

Properties of transistor based C60 thin film on polystyrene

This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.     

Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy

Silicon nanopillars are fabricated by inductively coupled plasma(ICP) dry etching with the cesium chloride(CsCl)islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus(P) diffusion by liquid dopant source(POCl3) at 870℃ to form P–N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy(XPS) is used to measure the Si 2p core levels of P–N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P–N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light.The energy shift of the Si 2p core level is-0.27 eV for the planar P–N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.     

Improved Z^1/3 Law of Nuclear Charge Radius

An improved Z^1/3 law of nuclear charge radius is presented. The comparison between the calculated and experimental nuclear charge radii now available shows that this new formula is better than the other conventional formulae.     

Application of synchrotron radiation to investigation of the mechanism of increase in the yield of alkali metal ions in electron-stimulated desorption

Core-level photoelectron spectroscopy with synchrotron radiation (hv = 140 eV) has been applied to study the variation in the Si⁺ charge state in silicon films deposited on the W(100) surface after thermal annealing of the substrate. The purpose of this study is to check the mechanism responsible for the sharp increase in the yield of Na⁺ ions in electron-stimulated desorption from a sodium layer adsorbed on the Si/W(100) surface after high-temperature annealing. The evolution of the W 4f _7/2 and Si 2p photoelectron spectra and the valence band photoemission spectra is investigated for two silicon coverages (1 and 3 ML) on the W(100) surface in the temperature range 300<T<2200 K. It is shown that annealing of 1 ML Si on the W(100) surface results in the formation of a W-Si covalent bond, which can weaken the Si-Na bond and lead to an increase in the equilibrium distance X ₀ and, hence, to an increase in the yield of Na⁺ ions in electron-stimulated desorption. The variation in the photoelectron spectra under annealing of 3 ML Si differs from that observed after annealing of 1 ML Si in the direction of charge transfer, thus correlating with the opposite effect of annealing of 3 ML Si/W on the Na⁺ yield in electron-stimulated desorption.     

A prototype silicon detector system for space cosmic-ray charge measurement

A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC （VA140） from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.     

Intermediate 8p-hybridization for chemical bonds in nonplanar covalent molecules of carbon

General representations for symmetrical and asymmetrical intermediate sp-hybridization are provided, with which the development of electronic structure in C3v-symmetrical C2H6 and the bonding configuration in C60 have been analyzed as an example. The spherical structure of C60 does not necessarily require the fourth hybrid, h4, to lie along the radial direction. Rather, h4 runs at an angle of 3.83° from the radius, in the plane bisecting a pentagon, to achieve maximum overlap with adjacent h4-hybrids. By virtue of these representations, a number of properties of covalent molecules and solids can be conveniently calculated. This work might be particularly helpful for the study of C-C bonding in curved structures of carbon, such as fullerenes, carbon nanotubes, and buckled graphene.     

In situ electrical resistance and activation energy of solid C6o under high pressure

The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0,49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.     

H2^＋-Like Impurities Confined by Spherical Quantum Dots： a Candidate for Charge Qubits

We have calculated the electron energy of the ground and lower excited states for H2^＋-like impurity states confined in finite spherical quantum dots in GaAs. Based on the characteristics of energy levels, we have proposed a scheme for realizing charge qubit composed by the the ground and the first excited states of this confined double donor system for the first time. In the proposed scheme the charge qubit is coded in terms of the located electronic states.     

Intense red mechanoluminescence from (ZnS)1−x(MnTe)x

Intense mechanoluminescent (ZnS)_1−x(MnTe)_x powder samples with x=0.02,0.05,0.10,0.15,0.20 and 0.25 were prepared by simple Solid State Reaction method. All samples were polycrystalline with wurtzite structure. Mechanoluminescence (ML) and Photoluminescence (PL) were observed in all the samples in the red region peaking around 650 nm. The red emission is attributed to the presence of Te along with Mn. ML is attributed to the release of holes due to the stress on the phosphors which then recombine with metastable Mn²⁺ emitting light. The intensity of ML is found to be strongly dependent on both the impact pressure and composition. The maximum intensities in both ML and PL were observed in samples with x=0.05.