Reflective photoluminescence fiber temperature probe based on the CdSe/ZnS quantum dot thin film

A reflective fiber temperature sensor based on the optical temperature dependent characteristics of a quantum dots (QDs) thin film is developed by depositing the CdSe/ZnS core/shell quantum dots on the SiO₂ glass substrates. As the temperature is changed from 30 to 200°C, the peak wavelengths of PL spectra from the sensing head increase linearly with the temperature, while the peak intensity and the full width at half maximum (FWHM) of PL spectra vary exponentially according to the specific physical law. Using the obtained temperature-dependent peak-wavelength shift, the average resolution of the designed fiber temperature sensor can reach 0.12 nm/°C, while it reaches 0.056 nm/°C according to the FWHM of PL spectrum.     

较高浓度PbSe量子点硅酸盐玻璃的制备及光学表征

采用高温熔融-热处理法,以ZnSe作为PbSe量子点的硒源,成功制备了较高浓度的PbSe量子点硅酸盐玻璃。透射电子显微镜(TEM)测试表明,量子点在玻璃基质中的体积比高达2%～4%,高于采用Se作为硒源时的掺杂体积比。X射线衍射(XRD)测试表明,PbSe量子点呈立方晶体结构。光致发光(PL)光谱测试表明,量子点有强烈的荧光发射,发光波长半峰全宽(FWHM)覆盖1400～2600nm,其PL峰值强度和FWHM均大于以Se为硒源时的情形。以ZnSe代替Se作为PbSe量子点的硒源,可有效避免Se组分的高温挥发,同时,残余Zn形成的ZnO有利于玻璃中PbSe量子点的析晶,从而提高了PbSe量子点在玻璃中的含量。该PbSe量子点玻璃,可用来进一步制备成超带宽、高增益的红外光纤放大器。     

Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots

The influence of GaAs(1 0 0) 2° substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality.     

Synthesis and photoluminescence properties of aqueous CdWO4 quantum dots with WO6 luminescence center

Aqueous CdWO₄ QDs were synthesized by the reaction of CdCl₂ and Na₂WO₄ in the presence of mercaptoacetic acid (TGA) as capping reagent. The crystal morphology, particle size and its distribution of as-prepared products were characterized by transmission electron microscopy (TEM, SAED) atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and photon correlation spectroscopy (PCS), respectively. Qualitative assays for functional groups on the QDs’ surface were measured by fourier transform infrared spectroscopy (FTIR). Photoluminescence properties of QDs were studied by photoluminescence spectroscopy (PL). The results showed that the single QD with diameter of about 8 ± 2 nm was single-crystal. The particle size distribution of QDs was normal. Infrared absorption bands of carboxylic group on the surface of CdWO₄ QDs were observed around 1610-1550 cm⁻¹ (nonsymmetrical vibration of -COO⁻) and 1400 cm⁻¹ (symmetric vibration of C-O). With reaction-time going, PL peak position shifted from 498 to 549 nm and intensity of PL increased first and then decreased. PL peak position of QDs was blue-shift compared with 570 nm WO₆⁶⁻ luminescence center of bulk CdWO₄.     

Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

This paper deals with the sol-gel elaboration and defects photoluminescence (PL) examination of Al₂O₃ nanocrystallites (size ∼30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO₂ host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al₂O₃/SiO₂ (AS) exhibited a strong PL bands at 400-600 and 700-900 nm in 78-300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400-600 and 700-900 nm, respectively.     

Optical properties of sol-gel fabricated Mn/SiO2 nanocomposites: Observation of surface plasmon resonance in Mn nanoparticles

Manganese nanoparticles were grown in silica glass and silica film on silicon substrate by annealing of the sol-gel prepared porous silicate matrices doped with manganese nitrate. Annealing of doped porous silicate matrices was performed at various conditions that allowed to obtain the nanocomposite glasses with various content of metallic Mn. TEM of Mn/SiO₂ glass indicates the bimodal size distribution of Mn nanoparticles with mean sizes of 10.5 nm and 21 nm. The absorption and photoluminescence spectra of Mn/SiO₂ glasses were measured. In the absorption spectra at 300 nm (4.13 eV) we observed the band attributed to the surface plasmon resonance in Mn nanoparticles. The spectra proved the creation of Mn²⁺ and Mn³⁺ ions in silica glass as well. The absorption spectra of Mn/SiO₂ glasses annealed in air prove the creation of manganese oxide Mn₂O₃. The measured reflection spectra of Mn/SiO₂ film manifest at 240-310 nm the peculiarity attributed to surface plasmons in Mn nanoparticles.     

Radiation response behaviour of Al codoped germano-silicate SM fiber at high radiation dose

Radiation response behaviour of Ge + Al doped SM fiber fabricated by the solution doping process has been studied at room temperature with respect to 1310 nm transmission wavelength under three different dose rates of 200, 400 and 600 Rad/min to compare with that of standard Er doped as well as Ge doped SM fibers. Their radiation sensitivity has been observed with variation of dose rates, transmission wavelength along with their recovery nature. Radiation response behaviour of Al doped SM fiber is found to be slightly non-linear in nature with very low dose rate dependency. No saturation level was found upto 13 Krad cumulative dose. Thermobleaching as well as photobleaching phenomena have also been studied. Gamma irradiated Al doped preform shows an absorption peak at around 300 nm due to generation of Al (E′) defect center and gets annihilated after thermobleaching process. Gamma irradiated Al doped SM fiber shows prominent photobleaching effect on their optical attenuation with respect to the 850 nm transmission wavelength. From ESR study resonance signals for Al³⁺ related radiation-induced defect centers are not clearly observed in this study. A very weak hyperfine pattern has been observed for gamma irradiated Al doped preform sample. The high radiation sensitivity along with linear response behaviour, low recovery and almost dose rate independence behaviour of the material system of Ge + Al codoped SM core optical fiber under gamma radiation shows their potential for application as fiber optic radiation sensor in comparison to the universal standard erbium doped SM fiber.     

Electroluminescence with micro-watt output from ultra-small sized Si quantum dots/amorphous SiO2 multilayers prepared by laser crystallization method

We report the fabrication of Si quantum dots (QDs)/SiO₂ multilayers by using KrF excimer laser (248 nm) crystallization of amorphous Si/SiO₂ multilayered structures on ITO coated glass substrates. Raman spectra and transmission electron microscopy demonstrate the formation of Si QDs and the size can be controlled as small as 1.8 nm. After laser crystallization, Al electrode is evaporated to obtain light emitting devices and the room temperature electroluminescence (EL) can be detected with applying the DC voltage above 8 V on the top gate electrode. The luminescent intensity increases with increasing the applied voltage and the micro-watt light output is achieved. The EL behaviors for samples with different Si dot sizes are studied and it is found that the corresponding external quantum efficiency is significantly enhanced in sample with ultra-small sized Si QDs.     

Electrospinning preparation and photophysical properties of one-dimensional (1D) composite nanofibers doped with erbium(III) complexes

1D composite nanofibers of poly(vinylpyrrolidone) (PVP, M_W≈60,000) doped with three Er(III) complexes were prepared by electrospinning. They demonstrated strong near-infrared (NIR) photoluminescence (PL) at 1535 nm and ternary Er(TTA)₃Phen (denoted as Er2, where TTA=2-thenoyltrifluoroacetonate; Phen=1,10-phenanthroline) fibers (Er2/PVP) exhibited maximum PL intensity. The crystal structure of Er2 complex has been determined by X-ray diffraction measurements. Er2 doped in fibers exhibited better thermal stability of NIR PL than the pure Er2 complex. These luminescent composite fibers have potential application in optical amplifiers.     

Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer

ZnO/SiO₂ thin films were fabricated on Si substrates by E-beam evaporation with thermal retardation. The as-prepared films were annealed for 2 h every 100 °C in the temperature range 400-800 °C under ambient air. The structural and optical properties were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL). The XRD analysis indicated that all ZnO thin films had a highly preferred orientation with the c-axis perpendicular to the substrate. From AFM images (AFM scan size is 1 μm×1 μm), the RMS roughnesses of the films were 3.82, 5.18, 3.65, 3.40 and 13.2 nm, respectively. PL measurements indicated that UV luminescence at only 374 nm was observed for all samples. The optical quality of the ZnO film was increased by thermal retardation and by using an amorphous SiO₂ buffer layer.     

Microstructure and multiphoton luminescence of Au nanocrystals prepared by using glancing deposition method

Au crystal columns embedded in SiO₂ with an average length of 480 nm and diameter of 30 nm were prepared by radio frequency co-sputtering technique with glancing angle. The photoluminescence (PL) of the Au-SiO₂ crystal column film exhibited polarization characteristic. With an increase of the laser power, the slope ∂ log(PL intensity)/∂ log(laser power) changed from 2 to 3, which indicated that the PL of Au-SiO₂ crystal columns were induced by two- and three-photon absorption, respectively.     

Optical properties of sol-gel fabricated Ni/SiO2 glass nanocomposites

Nickel nanoparticles were grown in silica glass by annealing of the sol-gel prepared silicate matrices doped with nickel nitrate. TEM characterization of Ni/SiO₂ glass proves the formation of isolated spherical nickel nanoparticles with mean sizes 6.7 and 20 nm depending on annealing conditions. The absorption and photoluminescence spectra of Ni/SiO₂ glasses were measured. In the absorption spectra, we observed the band related to the surface plasmon resonance (SPR) in Ni nanoparticles. The broadening of SPR was observed with decrease of Ni nanoparticle size. The width of the surface plasmon band decreases 1.5 times at the lowering of temperature from 293 to 2 K because of strong electron-phonon interaction. The spectra proved the creation of nickel oxide NiO clusters and Ni²⁺ ions in silica glass as well.     

Breakdown limits of optical multimode fibers for the application of nanosecond laser pulses at 532 nm and 1064 nm wavelength

For many applications, optical multimode fibers are used for the transmission of powerful laser radiation. High light throughput and damage resistance are desirable. Laser-induced breakdown at the end faces of fibers can limit their performance. Therefore, the determination of laser-induced damage thresholds (LIDT) at the surface of fibers is essential.Nanosecond (1064 nm and 532 nm wavelength) single-shot LIDT were measured according to the relevant standard on SiO₂ glass preforms (Suprasil F300) as basic materials of the corresponding fibers. For 10 kinds of fused silica fibers (FiberTech) with core diameters between 180 μm and 600 μm, an illumination approach utilizing a stepwise increase of the laser fluence on a single spot was used. For both wavelengths, the LIDT values (0% damage probability) obtained by means of the two methods were compared. The influence of surface preparation (polishing) on damage resistance was investigated. For equal surface finishing, a correlation between drawing speed of the fibers and their surface LIDT values was found. In addition to the surface measurements, bulk LIDT were determined for the preform material.     

Optical studies in gamma irradiated Mg doped CaF2 single crystals

Pure and Mg doped CaF₂ single crystals grown by the Bridgman method were irradiated with gamma rays (γ-rays) for doses ranging from 97 Gy to 9.72 KGy. The pristine samples showed minimal absorption indicating the purity of the samples. The γ-irradiated pure CaF₂ crystals showed prominent and strong absorption with a peak at ~ 374 nm besides three weak ones at ~ 456, 523 and 623 nm. However γ-rayed Mg doped crystals showed a prominent absorption with a strong peak at ~ 370 nm and a broad one at ~ 530 nm. The absorption indicated the generation of F and F-aggregate centers in the irradiated crystals. The photoluminescence (PL) emission spectrum of both pure and Mg doped crystals showed prominent emission at ~ 390 nm when they were excited at ~ 250 nm. Also, when the samples were excited at 323 and 363 nm strong emissions were observed at ~ 430 and 422 nm respectively. The optical absorption and PL intensities were found to increase with increase in dose.     

Fabrication and characterization of Au/SiO2 nanocomposite films

Au/SiO₂ nanocomposite films were prepared by radio frequency sputtering technique and annealing. The above nanocomposite films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). The surface of the nanocomposite films was uniform with the particle diameter of 100-300 nm. The size of Au crystallites increased on increasing annealing time. The luminescent behavior of the nanocomposite films was characterized by photoluminescence (PL) with different excitation wavelengths. Two emission peaks at around 525 nm and 560 nm were observed with the excitation wavelength at 325 nm. An intensive emission peak at around 325 nm was observed with the excitation wavelength at 250 nm, which is related to the defective structure of the amorphous SiO₂ layer because of oxygen deficiency, and could be applied to many fields, such as ultraviolet laser and ultraviolet detector.     

New nanosecond Q-switched Nd:VO4 laser fifth harmonic for fast hydrogen-free fiber Bragg gratings fabrication

We demonstrate the fabrication of fiber Bragg gratings using a novel high-repetition rate nanosecond Q-switched Nd:VO₄ laser fifth harmonic (213 nm) source for the first time in boron and hydrogen-free, Ge doped fiber. Strong gratings are rapidly obtained with the phase mask technique in hydrogen-free B/Ge doped photosensitive fiber with relatively low average power (100 mW), as well as in standard Corning SMF28 fiber. The evolution of the refractive index change during UV-exposure is presented. Photosensitivity of fibers to the 213 nm light is compared to the fourth harmonic (266 nm) light, as well as picosecond 213 nm radiation and is shown to be significantly higher than both. We believe that the photosensitivity of SMF28 fiber is due to a single-photon rather than two-photon absorption process.     

Size-dependent photoluminescent properties of uncapped CdS particles prepared by acoustic wave and microwave method

CdS particles with crystallite size of 5-12 nm have been prepared via acoustic wave stimulated (sonochemical) route and microwave initiated combustion method. X-ray line broadening and transmission electron microscopy (TEM) suggest that sonochemical powders are more amorphous (5-10 nm) compared to microwave-synthesized sulphides (10-15 nm). The photoluminescent (PL) properties of powders with size <10 nm show a clearly blue shifted, resolved emission with full-width at half-maxima (FWHM) ∼100 nm, while powders with size >15 nm show dominant blue to green narrow emission with FWHM ∼60 nm. The mechanistic details of the synthetic route appear to affect the morphology and consequently the PL properties to a significant extent.     

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

Si quantum dots (QDs) embedded in SiO₂ can be normally prepared by thermal annealing of SiO_x (x < 2) thin film at 1100 °C in an inert gas atmosphere. In this work, the SiO_x thin film was firstly subjected to a rapid irradiation of CO₂ laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100 °C for 1 h as usual. The photoluminescence (PL) intensity of Si QD was found to be enhanced after such pre-annealing treatment. This PL enhancement is not due to the additional thermal budget offered by laser for phase separation, but attributed to the production of extra nucleation sites for Si dots within SiO_x by laser irradiation, which facilitates the formation of extra Si QDs during the subsequent thermal annealing.     

Photoinduced second-order optical susceptibilities of Er2O3 doped TeO2-GeO2-PbO glasses

Second-order optical susceptibilities were established in the optically poled erbium doped tellurite glasses near the melting temperature. The non-linear optical susceptibility was formed by bicolor coherent optical treatment performed by two coherent laser beams originated from 50 ps Nd-YAG laser (λ = 1.32 μm) exciting the high pressure hydrogen laser cell emitting at 1907 nm. The non-centrosymmetric grating of the medium was created by coherent superposition of the fundamental laser illumination at 1907 nm and the doubled frequency one at 953.5 nm. The maximally all-optically poled SHG occurs for 2% doped Er₂O₃ (in weighting units) TeO₂-GeO₂-PbO glass. It was found that the photoinduced SHG demonstrates a saturation during the photo-treatment of 9-10 min using the two beams polarized at angle about 45° between them. During the coherent bicolor optical treatment it was achieved the value of second-order susceptibility up to 3.6 pm/V at 1907 nm. The optimal ratio between the fundamental beam with power density about 1.1 GW/cm² and writing doubled frequency seeding beam about 0.015 GW/cm² corresponds to the maximal of photoinduced SHG. For glasses with lower concentration of Er₂O₃, the relaxation of the second-order optical susceptibility is substantially longer and achieves SHG value that corresponds to 80% of the maximal ones. It is necessary to emphasize that efficient optically-poled grating exists only within the narrow temperature range near the glassing temperature. Possible physical mechanisms of the phenomenon observed are discussed. Generally the used glasses possess better parameters than early investigated germinate glasses.     

Narrow band optical filter in fluorescein doped boric acid glass saturable absorber thin films

We demonstrate narrow band optical filter like frequency response with full width half maximum (FWHM) of nearly (1.75 ± 0.25) Hz in fluorescein doped boric acid glass films [10⁻⁴ M], using modulated optical phase conjugation and a nearly non-degenerate four wave mixing technique. Modulated optical phase conjugation signals are described in the limit of a weak probe and relatively strong pump beams. Both pump beams are of nearly equal intensity at a wavelength of 514.5 nm from a continuous-wave Ar⁺ laser. The probe beam frequency has been detuned with a ramp signal using a piezo electric mirror.