不锈钢电子束收集极的损伤能量密度阈值

对强磁场相对论返波管系统中电子束收集极损伤的主要影响因素进行了分析,通过设计并使用锥面不锈钢收集极,提高了收集极的耐电子束轰击能力。在单次实验条件下,研究了电子束能量密度对不锈钢收集极表面损伤及系统产生微波的影响,结合对无箔二极管中电子束空间密度分布的研究结果,给出了不锈钢收集极损伤电子束能量密度阈值范围。     

O~(2+)离子穿过碳膜引起的前后表面电子发射

测量了入射能为1.9~11.3 keV/u的O~(2+)离子穿过碳膜诱导的前向、后向(分别对应出射表面和入射表面)电子发射产额。实验中,通过改变入射离子的能量和流强,系统地研究了电子能损和离子束流强度对前向、后向电子发射产额的影响。结果表明,在本实验的能量范围内,前向、后向电子发射产额与对应表面的电子能损有近似的正比关系,而与束流强度无关。分析还发现引起后向电子发射的动能阈值约为0.2 keV/u,势能电子发射产额约为1 e~-/ion。     

超强激光与固体气体复合靶作用产生高能氦离子

激光氦离子源产生的MeV能量的氦离子因有望用于聚变反应堆材料辐照损伤的模拟研究而得到关注.目前激光驱动氦离子源的主要方案是采用相对论激光与氦气射流作用加速高能氦离子,但这种方案在实验上难以产生具有前向性和准单能性、数MeV能量、高产额的氦离子束,而这些氦离子束特性是材料辐照损伤研究中十分关注的.不同于上述激光氦离子产生方法,我们提出了一种利用超强激光与固体-气体复合靶作用产生氦离子的新方法.利用这种方法,在实验上,采用功率密度5×10~(18)W/cm~2的皮秒脉宽的激光脉冲与铜-氦气复合靶作用,产生了前向发射的2.7 MeV的准单能氦离子束,能量超过0.5 MeV的氦离子产额约为10~(13)/sr.二维粒子模拟显示,氦离子在靶背鞘场加速和类无碰撞冲击波加速两种加速机理共同作用下得到加速.同时粒子模拟还显示氦离子截止能量与超热电子温度成正比.     

Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface.Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.     

钛酸镧薄膜的制备及工艺优化

为了获得制备钛酸镧（LaTiO3）薄膜的最优工艺条件,采用电子束热蒸发技术在K9基底上制备了单层LaTiO3激光薄膜。研究了不同工艺条件对LaTiO3薄膜激光损伤特性的影响。研究结果表明,对LaTiO3薄膜激光损伤阈值（laser-induced damage threshold, LIDT）影响最大的工艺条件是沉积温度,其次是工作真空度,最后是蒸发束流。获得了制备单层LaTiO3激光薄膜的最优工艺条件:沉积温度175 ℃、工作真空度2.010-2 Pa、蒸发束流120 mA（8 keV）;证明了最优工艺下制备的LaTiO3薄膜具有良好的激光损伤特性、稳定性以及重复性,所制备LaTiO3薄膜的激光损伤阈值为16.9 J/cm2（1 064 nm,10 ns）。     

Field theory of dielectric Cherenkov maser

The effect of three-dimensional perturbed velocity and three-dimensional perturbed current density on the beam-wave interaction of dielectric Cherenkov maser is analysed by use of the self-consistent linear field theory. Three distinct cases are considered. First, the propagation of the electron beam in an annular dielectric liner enclosed by a loss-free conducting wall is investigated. The dispersion equation and the simultaneous condition of the beam-wave interaction are derived. It's clearly shown that the instability of the interaction results from the coupling of the TM mode in the dielectric lined slow-wave waveguide to the beam mode via the electron beam. And the coupling is proportional to the density of the beam. The growth rate of the wave produced by the electron beam are obtained. Then, the case of a relativistic electron beam guided by a longitudinal magnetic field in the same slow-wave structure is examined. The motion of electrons could be approximated to be one-dimensional when the simultaneous condition of the beam-wave interaction of dielectric Cherenkov maser is satisfied. Finally, the effect of the background plasma on the instability of the beam-wave interaction is studied.This work is supported by National Natural Science Foundation of China.     

The reflection of electrons from standing light waves

Experiments are described in which a slow electron beam is deflected by a standing light wave produced by a high intensity laser. This interaction is believed to occur as a Bragg reflection of the electrons in the standing wave intensity pattern set up in the light beam, as was predicted byKapitza andDirac in 1933. No energy interchange takes place but a momentum transfer which results in a Bragg relationship for the angle of reflection. The probability is proportional to the square of the light intensity.Kapitza-Dirac's original particle treatment of the effect is shortly reviewed and a wave mechanical treatment is added. Two types of experiments A and B are described. In type A an electron beam is scanned through a standing light wave and any deflection is detected with a differential amplifier. In type B the electron beam is locked in at maximum deflection and the laser output is simultaneously displayed with the deflected electrons on a fast dual beam oscilloscope. The electron beam deflections follow the fine structure of the laser spikes. Results from both types of experiments stay within the right magnitude of the theoretical predictions.     

Damage and molecular changes under a laser beam in SEM‐EDX/MRS interface: a case study on iron‐rich particles

The control of damage to individual environmental particles by a laser beam during Raman spectroscopy carried out in ambient air is generally well understood. The nature and control of damage under vacuum conditions (e.g. in the scanning electron microscopy with energy X‐ray detection combined with micro‐Raman spectroscopy—interfaced SEM‐EDX/MRS) are more complex and less well comprehended. The physical and chemical processes that affect the damage caused to small particles by lasers still remain somewhat unclear, but certainly the atmosphere (vacuum/air) and the beam intensity have very significant influences. Furthermore, it has been determined that some particles (e.g. haematite), although stable under an electron beam, are damaged by the laser beam, hampering their analysis. Additionally, when simultaneous analyses by SEM/EDX and MRS are considered, the correct choice of the collection surface plays a crucial role. As a result, the following collection substrates were tested to determine their influence on the laser beam damage process to the particle: silver and aluminium foils and silicon wafers. A test study was performed using artificial examples of haematite (Fe₂O₃) particles. Exposure of Fe₂O₃ particles in vacuum to 514‐ and 785‐nm laser radiation often leads to their melting, transformation and evaporation. The dependence of the damage caused by the laser beam on the particle structure is reported here. Molecular and crystallographic changes have also been revealed. Formation of magnetite (as an effect of re‐crystallisation) and Raman inactive structures was detected. Copyright © 2010 John Wiley & Sons, Ltd.     

Measurement of lattice damage caused by ion-implantation doping of semiconductors†

Two new techniques have been used to measure the lattice damage produced in gallium arsenide by the implantation of 60 keV cadmium ions. In one of these methods, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600Å. The decrease in reflectivity resulting from ion- implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed in the scanning electron microscope as a function of the angle of incidence of the electron beam on a single crystal surface. The degradation of these ‘Coates-Kikuchi’ patterns resulting from ion implantation was used to obtain a quantitative measure of the lattice damage caused by the implantation process. The results of measurements made by both of the methods described have been compared with each other, and with data obtained by the more established method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.     

BEPCⅡ Positron Source

BEPCⅡ— an upgrade project of the Beijing Electron Positron Collider (BEPC) is a factory type of e^＋e^－ collider. The fundamental requirements for its injector linac are the beam energy of 1.89GeV for on-energy injection and a 40mA positron beam current at the linac end with a low beam emittance of 1.6μm and a low energy spread of ±0.5% so as to guarantee a higher injection rate (≥50mA/min) to the storage ring. Since the positron flux is proportional to the primary electron beam power on the target, we will increase the electron gun current from 4A to 10A by using a new electron gun system and increase the primary electron energy from 120MeV to 240MeV. The positron source itself is an extremely important system for producing more positrons, including a positron converter target chamber, a 12kA flux modulator, the 7m focusing module with DC power supplies and the support. The new positron production linac from the electron gun to the positron source has been installed into the tunnel. In what follows, we will emphasize the positron source design, manufacture and tests.