Ion irradiation of exchange bias systems for magnetic sensor applications

It has been demonstrated that He⁺ ion irradiation is an excellent tool for modifying magnetic properties, like the magnetic anisotropy, the interlayer exchange coupling strength and the exchange bias field of ultra-thin magnetic layered systems. This paper summarizes the effects of ion irradiation on exchange bias systems. As a first example, for possible applications of the ion induced magnetic effects, the realization of an angle sensing device is described. Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-631-205-4095, E-mail: fassbend@physik.uni-kl.de RID="**" ID="**"Present address: Université de Rouen, Rouen, France     

Laser transitions under resonant optical pumping of donor centres in Si:P

Terahertz stimulated emission of phosphorus donors in silicon optically excited by radiation from the free-electron laser FELIX has been studied. It is found that a spectral line of the Si:P laser emission depends on pump frequency. Stimulated emission arises on the 2p₀→1s(E) intra-centre transition (21.2 meV) under resonant pumping of the 2p₀ state and on the 2p₀→1s(T₂) transition (22.3 meV) under pumping of the 2p_± or higher odd-parity donor states. The line shift is attributed to the Auger redistribution of the 1s(E)- and 1s(T₂)-state populations. Received: 7 November 2002 / Revised version: 7 April 2003 / Published online: 14 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-30/6705-55-07, E-mail: sergeij.pavlov@dlr.de RID="**" ID="**"On leave from: The Institute for Physics of Microstructures, Nizhny Novgorod, Russia     

The application of quasi-phase-matched parametric light sources to practical infrared chemical sensing systems

Quasi-phase-matched (QPM) materials allow the generation of spectroscopically useful infrared radiation in an efficient and broadly tunable format. Here, we describe several applications of QPM-based light sources to remote and local chemical sensing. The remote systems are gas imagers that employ a fiber-pumped continuous-wave optical parametric oscillator or a microlaser-pumped, diode-seeded optical parametric amplifier as the illumination source. Technology described for local sensing includes a cavity ring down spectrometer that employs a novel optical parametric generator–amplifier to achieve ≥350 cm^-1 of contiguous tuning and a long-wave infrared light source based on QPM GaAs. In each case the use of QPM materials in conjunction with effective pump sources instills simplicity and ruggedness into the sensing systems. Received: 15 April 2002 / Revised version: 6 June 2002 / Published online: 12 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-925/294-2595, E-mail: tjkulp@sandia.gov RID="**" ID="**"Present address: Corning Inc., Corning, NY 14831, USA RID="*" ID="*"Present address: Corning Inc., Corning, NY 14831, USA RID="**" ID="**"Present address: Blue Leaf Networks, Sunnyvale, CA 94086, USA RID="***" ID="***"Present address: Sandia National Laboratories, Albuquerque, NM 87185, USA     

Wavelength dependence of nonlinear absorption in a bis-phthalocyanine studied using the Z-scan technique

The wavelength dependence of the nonlinear absorption of a bis-phthalocyanine, Nd(Pc)₂, dissolved in dimethyl formamide was studied in the rising part of the Q-band using the open aperture Z-scan technique, to determine the wavelength region over which the nonlinear absorption changes from reverse saturable absorption to saturable absorption. It was found that the sample could be used as a reverse saturable absorber, and hence as an optical limiter, up to a wavelength of about 604 nm. The imaginary part of the third order susceptibility was also calculated for these wavelengths. Resonant enhancement of the imaginary part of the third order susceptibility was clearly observed. Received: 26 April 2002 / Revised version: 30 June 2002 / Published online: 20 December 2002 RID="*" ID="*"Corresponding author. Fax: +91-484/576-714, E-mail: kpu@cusat.ac.in RID="**" ID="**"Present address: Optical Sciences Center, University of Arizona, Tucson, USA     

Exciton dispersion in silicon nanostructures formed by intense,ultra-fast electronic excitation

The intense, ultra-fast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce in the yellow-green (∼2-eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g. Xe⁴⁴⁺ and Au⁵³⁺) to produce the ultra-fast electronic excitation. The observation of excitonic features in the luminescence from these nanostructures has recently been reported. In this paper we report the dispersion of the excitonic features with laser excitation energy. A phonon-scattering process is proposed to explain the observed dispersion. Received: 2 October 2001 / Accepted: 18 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-925/423-7040, E-mail: Hamza1@llnl.gov RID="**" ID="**"Present address: University of California, Lawrence Berkeley National Laboratory, Berkeley, CA 94 720, USA     

Transmission and scanning electron microscopy studies of single femtosecond- laser-pulse ablation of silicon

The final state of the material resulting from laser irradiation of silicon using 130 fs pulses at 790 nm was studied using a number of techniques including scanning and transmission electron microscopies, as well as atomic force microscopy. Structural details and the level of damage to the nearby solid following irradiation were characterized and are discussed in the context of recent dynamical studies. Received: 28 September 2001 / Accepted: 3 March 2002 / Published online: 19 July 2002 RID="*" ID="*"Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4M1, Canada RID="**" ID="**"Corresponding author. Fax: +1-905/521-2773, E-mail: borowia@mcmaster.ca RID="***" ID="***"Present address: Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, UK RID="****" ID="****"Department of Materials Science and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada RID="*****" ID="*****"Departments of Engineering Physics, and Physics and Astronomy, and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada     

Oxygen plasma and high pressure H<Subscript>2</Subscript>O vapor heat treatments used to fabricate polycrystalline silicon thin film transistors

Oxygen plasma and high pressure H₂O vapor heat treatment were applied to fabrication of n-channel polycrystalline silicon thin film transistors (poly-Si TFTs). 13.56 MHz-oxygen-plasma treatment at 250 °C, 100 W for 5 min effectively reduced defect states of 25-nm-thick silicon films crystallized by 30 ns-pulsed XeCl excimer laser irradiation. 1.3×10⁶-Pa-H₂O vapor heat treatment at 260 °C for 3 h was carried out in order to improve electrical properties of SiO_x gate insulators and SiO_x/Si interfaces. A carrier mobility of 470 cm²/V s and a low threshold voltage of 1.8 V were achieved for TFTs fabricated with crystallization at 285 mJ/cm². Received: 18 November 2002 / Accepted: 25 November 2002 / Published online: 11 April 2003 RID="*" ID="*"Corresponding author. Fax: +81-42/388-7109, E-mail: tsamesim@cc.tuat.ac.jp     

A 7-W diode-pumped Nd:YVO4 cw laser at 1.34 μm

A Nd:YVO₄ laser, end-pumped by a fiber-coupled diode-laser array, generates 7.3 W of output power at 1342 nm, the highest so far reported for this host crystal. The slope efficiency is 40% and the output-beam divergence is close to the diffraction limit. An important point in attaining such results is the choice of crystals with low Nd concentration. Received: 16 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +39-050/844333, E-mail: dilieto@df.unipi.it RID="**" ID="**"Permanent address: Scuola Normale Superiore, Piazza dei Cavalieri 7, Pisa, Italy     

A high-sensitivity in situ optical diagnostic technique for laser cleaning of transparent substrates

A differential optical transmission technique has been used to monitor in situ the efficiency of laser cleaning for the removal of sub-micrometer-sized particles on substrates transparent at the monitoring wavelength. This technique has been applied to the removal of sub-micrometer polystyrene particles on polyimide substrates using laser pulses of 30 ps duration at 292 nm while probing the material transmission at 633 nm. The sensitivity achieved -1/10⁴ for the transmission changes induced upon single-pulse laser exposure – allows us to monitor the removal of just a few sub-micron-sized particles from the probed region inside the irradiated area. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +33-3/87844082, E-mail: nchaoui@iut.univ-metz.fr RID="**" ID="**"Present address: Laboratoire de Chimie et Applications, Institut Universitaire de Technologie de Metz, Département Chimie, Rue Victor Demange, 57500 Saint-Avold, France     

Orientation studies of Si-phthalocyanine sulfonic acids cast on SiOx substrates

Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-μ-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by angle-dependent near-edge X-ray absorption fine-structure spectroscopy. The morphology was characterized by atomic force microscopy. Most samples exhibited a significant orientation that was accompanied by crystalline structures; others had no orientation at all with a dominant amorphous morphology. This behavior indicates that several preparation parameters affect the crystallinity and the orientation of the phthalocyanines. Received: 16 January 2002 / Accepted: 11 February 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +1-919/515-7331, E-mail: harald_ade@ncsu.edu RID="**" ID="**"Present address: Southern Illinois University, Physics, Mailcode 4401, Carbondale, IL 62901, USA     

Sub-nanosecond microchip laser with intracavity Raman conversion

Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr⁴⁺:YAG saturable absorber, and Ba(NO₃)₂ Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 μJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results. Received: 20 December 2002 / Revised version: 6 March 2003 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-716/645-6945, E-mail: ankuzmin@acsu.buffalo.edu RID="**" ID="**"Present address: University at Buffalo, SUNY, The Institute for Lasers, Photonics, and Biophotonics, 458 NSC, Buffalo, NY 14 260-3000, USA     

Diffusion of Ta in α-Ti

The diffusion of Ta in the hcp (α) phase of high-purity Ti (99.99%) was studied at different temperatures from 911 K up to 1123 K. The Rutherford Backscattering Spectrometry (RBS) and Heavy Ion RBS (HIRBS) techniques were used to obtain the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows prediction of the Arrhenius law. The activation energy of the diffusion process is (318±7)kJ/mol, similar to that corresponding to self-diffusion in α-Ti. On the other hand, the measured values of D are systematically lower than those corresponding to self-diffusion by a factor of approximately 5. This reduction could be explained by taking into account the mass difference between Ta and Ti. An increase of the diffusion coefficient was measured when the diffusion proceeds on a less pure Ti (99.9%) matrix. This increment is higher at lower temperatures. Received: 12 November 2001 / Accepted: 12 March 2002 / Published online: 5 July 2002 RID="*" ID="*" RID="*" ID="*" RID="**" ID="**"Corresponding author. Fax: +54-11/6772-7362, E-mail: dyment@cnea.gov.ar RID="*" ID="*"Members of the Carrera del Investigador Científico del Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina     

Femtosecond pulsed-laser deposition of BaTiO<Subscript>3</Subscript>

The elemental composition and the surface morphology of thin films grown by laser ablation of barium titanate with femtosecond pulses at 620 nm laser wavelength have been systematically studied according to the experimental pulsed-laser deposition parameters : laser energy density, oxygen pressure, substrate temperature, target–substrate distance and substrate position (in- and off-axis geometry). Firstly, even at high temperature (700 °C), the deposits consist of coalesced particles up to 1-μm in size, mixed in a poorly crystallised tetragonal BaTiO₃ thin film. The particles formed in femtosecond pulsed-laser deposition induce a high surface roughness, which is observed whatever the experimental growth conditions and does not correspond to the droplets often observed during laser ablation in the nanosecond regime. As shown by plasma expansion dynamics, these particles propagate toward the substrate in the plasma plume with a low velocity, and are assumed to be produced by gas-phase reactions. Moreover, the cationic concentration evaluated through the Ba/Ti ratio strongly depends on the oxygen pressure in the ablation chamber and the angular position of the substrate along the normal to the target at laser impact. Indeed, the films appear to be enriched in the heavy element (Ba) when the substrate is located at high angular deviation. This fact is correlated to an increase in the lighter species (i.e. Ti) in the central part of the plasma plume. Received: 30 April 2002 / Accepted: 26 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +33-1/4354-2878, E-mail: millon@gps.jussieu.fr RID="**" ID="**"Also at: LSMCL, Université de Metz, 57078 Metz Cedex 3, France     

Novel technique for the measurement of fiber dispersion properties

We present a novel method for measuring the linear and nonlinear dispersion properties of conventional and micro-structured fibers. It is based on the automated compensation of phase modulations using a high-resolution pulse-shaping device. No tunable laser source is required. Received: 20 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-3641/947202, E-mail: stobrawa@ioq.uni-jena.de RID="**" ID="**"Present address: Carl Zeiss Meditec AG, G?schwitzer Strasse 51–52, 07745 Jena, Germany     

Characteristics of SrBi2Ta2O9 ferroelectric films on GaAs with a TiO2 buffer layer

Mainly [115]-oriented SrBi₂Ta₂O₉ (SBT) films were prepared on GaAs(100) substrates with TiO₂ buffer layers. Both the SBT films and the TiO₂ buffer layers were deposited by pulsed laser deposition (PLD) using a KrF excimer laser. The depth profile of the constituent elements observed by Auger electron spectrometry (AES) shows no remarkable diffusion at both the interfaces between SBT and TiO₂ and between TiO₂ and the GaAs substrate. The electrical characteristics of the Pt/SBT/TiO₂/GaAs(100) structures show a ferroelectric hysteresis loop with a small remanent polarization (∼0.5 μC/cm²). Received: 1 March 2002 / Accepted: 3 March 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/3595535, E-mail: xhliu81@hotmail.com RID="**" ID="**"Present address: Data Storage Institute, DSI Building, 5, Engineering Drive 1 (off Kent Ridge Crescent, NUS) 117608 Singapore     

Mid-infrared polarization spectroscopy of carbon dioxide

The use of mid-infrared polarization spectroscopy (PS) for the detection of CO₂ has been demonstrated. The P(13) and P(14) resonances of the (0 0⁰ 0)→(1 0⁰ 1) transition of CO₂ were probed using a single-mode optical parametric generator system to produce a high-intensity laser beam at approximately 2.7 μm. The experiments were performed in an atmospheric pressure CO₂ jet and also in a sub-atmospheric pressure gas cell. The experimental results were compared with the results of the time-dependent density-matrix equations using direct numerical integration. The Zeeman-state structure of the upper and lower energy levels was included in the multi-state formulation of the density-matrix equations. Fifty-eight Zeeman states and two bath levels were included in the numerical analysis of the P(14) transition. The measured and calculated PS line shapes were in good agreement, and the absolute experimental signal level agreed with the theoretical calculation to within a factor of five. Received: 20 March 2002 / Revised version: 16 August 2002 / Published online: 11 December 2002 RID="*" ID="*"Present address: Innovative Scientific Solutions Inc., 2766 Indian Ripple Road, Dayton, OH 45 440, USA RID="**" ID="**"Corresponding author. Fax: +1-765/494-0539, E-mail: Lucht@purdue.edu RID="***" ID="***"Present address: School of Mechanical Engineering, Purdue University, W. Lafayette, IN 47807-2040 USA     

Micrometer-sized Si-Sn-O novel structures with SiONWs on their surfaces

Novel micrometer-sized Si-Sn-O structures with SiO₂ nanowires (SiONWs) growing from their surfaces have been achieved at about 980 °C on Si (111) wafer catalyzed by Sn vapor generated from Sn powders. The Si wafer itself served as a silicon source in the reaction. The micrometer-sized structures, with diameters of several micrometers to several tens of micrometers consisted of Sn, Si and O. The amorphous SiONWs growing from the surface of the micrometer-sized structures were smooth, with diameters about 120 nm and with a composition close to that of SiO₂. The growth mechanism of these novel structures is discussed briefly. Received: 30 July 2002 / Accepted: 18 September 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/5591434, E-mail: shsuncn@hotmail.com     

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O⁺ or B⁺) implanted samples are gamma-irradiated with ⁶⁰Co. Gamma irradiation creates electron levels at the SiSiO₂ interface of the samples in a different way depending on the type of the previously implanted atoms (O⁺ or B⁺). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. Received: 17 June 2002 / Accepted: 31 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +359-2/975-3236, E-mail: kaschiev@issp.bas.bg     

Synthesis and photoluminescence of aligned SiO<Subscript>x</Subscript> nanowire arrays

Aligned SiO_x nanowire arrays standing on a Si substrate were successfully synthesized using a simple method by heating a single-crystalline Si slice covered with SiO₂ nanoparticles at 1000 °C in a flowing Ar atmosphere. The SiO_x nanowire arrays were characterized by scanning electron microscopy and transmission electron microscopy. The SiO_x nanowires become progressively thinner from bottom to top. The formation process of the SiO_x nanowire arrays is closely related to a vapor–solid mechanism. Room-temperature photoluminescence measurements under excitation at 260 nm showed that the SiO_x nanowire arrays had a strong blue–green emission at 500 nm (about 2.5 eV), which may be related to oxygen defects. Received: 29 April 2002 / Accepted: 30 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551-559-1434, E-mail: gwmeng@mail.issp.ac.cn