Al/Cu阻抗匹配状态方程测试靶制备工艺研究

 采用轧制技术和真空扩散连接技术，成功实现了Al/Cu阻抗匹配状态方程测试靶的制备，通过原子力显微镜（AFM）、扫描电镜（SEM）、X射线衍射（XRD）、台阶仪等测试方法，对样品结构及表面质量进行分析。结果表明：通过轧制技术制备的金属薄膜表面质量较好，表面粗糙度小于25 nm；扩散连接铝铜薄膜界面结合良好，为连续连接，扩散界面控制在150 nm以内。     

UBMS技术制备DLC薄膜的光学常数椭偏分析

采用宽光谱变角度椭圆偏振仪对非平衡磁控溅射（UBMS）技术沉积的类金刚石（DLC）薄膜的光学常数进行了测量与分析。在建立模型时,根据DLC薄膜成膜特性,分析和调整了模型结构;综合考虑了表面粗糙度、薄膜与基底表面及界面因素对测试结果的影响,将表面层和界面层分离出来,并采用有效介质方法对它们的影响作了近似处理。结果表明：硅基底上采用UBMS技术制备DLC薄膜的椭偏数据,经该模型拟合后均方误差（MSE值）从37.39下降到4.061,提高了测量精度。     

不同衬底上制备YBa2Cu3O7-δ超导薄膜的微结构研究

采用大直径中空柱状阴极直流磁控制溅射装置，在LaAlO3和Zr(Y)O2衬底上制备YBCO超导薄膜。用透射电镜（TEM）、扫描隧道显微镜（SIM）和原子力显微镜（AFM）对薄膜和衬底间的界面，薄膜的螺旋生长结构，YBCO薄膜及其相应衬底的表面形貌进行了观察和测量。分析了基片表面形貌及表层内缺陷对界面附近薄膜组织结构的影响。研究了不同衬底沉积的超导薄膜具有不同表面形貌的原因。从生长机理角度对表面形貌、缺陷和位错的形成机制进行讨论。     

YBCO薄膜热稳定性和微结构的关系研究

我们已报道过YBa2Cu3O7-δ（YBCO）的过热现象并且对其过热的机制进行了研究．在本文的工作中，主要研究了YBCO薄膜的微结构对于其过热行为的影响．通过高温金相显微镜对具有不同微结构的YB（的薄膜的不同的熔化行为进行了实时观测，并且用原子力显微镜（AFM）和X射线衍射仪（XRD）对这些具有不同品质的薄膜进行表征．结果表明，YBCO薄膜的微结构对于其过热度以及整个薄膜熔化的过程有很大的影响，高品质的薄膜具有低界面缺陷比率，由此导致了其在熔化过程中较高的过热度．本文同时在实时观测，AFM和XRD所得到实验结果的基础上，通过半共格界面能的理论很好的解释了YBCO薄膜在不同的微结构情况下体现出来熔化和过热行为的差异．     

溶液法制备PVP为界面修饰层的红荧烯结晶性薄膜

为了获得低成本、高结晶度的红荧烯薄膜，采用溶液加工的方法和聚合物界面修饰层研究了红荧烯薄膜的性质。首先，通过旋涂方法在Si/SiO₂衬底上先沉积一层聚乙烯吡咯烷酮（PVP）作为界面修饰层，利用偏光显微镜（POM）、原子力显微镜（AFM）研究了PVP层表面形貌及粗糙度。接着在PVP上滴涂红荧烯溶液后固化烘干，制备红荧烯晶体薄膜，研究了不同PVP浓度和不同成膜温度下界面修饰层对红荧烯表面形貌的影响。然后，利用X射线衍射（XRD）表征对比研究了薄膜的微观结构。最后，分析了红荧烯晶体薄膜的生长机制。实验结果表明：80~140℃及低浓度的PVP条件下能得到结晶度高、连续的红荧烯球晶，并且温度升高时，球晶尺寸变大。PVP作为界面修饰层有利于改善红荧烯的成膜性，制备高结晶度的晶体薄膜。     

GaS/GaAs界面电学性质研究

报道了微波放电法在GaAs表面生长GaS薄膜．用电容 电压法（C-V）、伏安法（I-V）以及深能级瞬态谱（DLTS）等测试手段对GaS/GaAs界面的电学性质进行了研究．GaS/GaAs界面的CV特性反映此处的界面特性比较好，界面态密度约为10¹²/（cm²·eV）．DLTS的测试得到了与其一致的结果．另外，从I-V曲线中漏电流的大小，估算出GaS的电阻率为10¹¹Ω·cm 关键词：     

有机电致发光器件材料的椭偏研究

本文报道了用可变入射角椭圆偏振仪（Variable angle incidence Spectroscopic Ellipsometer）测量Alq3,NPB,CuPc,Rubrene薄膜的光学常数，我们采用真空蒸镀法在硅衬底上分别制备了以上四种薄膜，然后我们用可变入射角椭圆偏振仪对四种薄膜进行了测量，测量在大气中进行，光谱范围从200到1000nm（或1.24到5cV），测量角度为65℃、70℃、75℃、80℃，接着，用Wvase32软件对四种薄膜的光学常数随波长（光子能量）的变化函数进行拟合，通过拟合我们得到了真空蒸镀的Alq3,NPB,CuPc,薄膜的光学常数随波长的变化函数及曲线，并且从材料吸收谱的吸收边，我们还得到了这些材料的光学禁带宽度。     

薄膜中异常晶粒生长理论及能量各向异性分析

针对柱状晶薄膜，建立了异常晶粒生长理论模型.指出薄膜中的晶粒生长，除像传统的整体材料中的晶粒生长一样考虑晶界能外，还应当考虑表面能、界面能和应变能.对能量的各向异性进行了回顾性分析.从表面能的最小化考虑，面心立方和体心立方薄膜的择优取向或织构应分别为（111）和（110）；而从应变能的最小化考虑，面心立方和体心立方薄膜的择优取向或织构应分别为（110）和（100）. 关键词： 薄膜 异常晶粒生长 模型 织构     

存储器用铁电薄膜及电极材料的研究

铁电体独特的自发电极化双稳性质和非线性光学性质使其在光电子器件中得到广泛应用．为了实现器件的小型化和与微电子、光电子工艺兼容，铁电薄膜已成为一个研究热点．自发电极化的大小和取向以及外电场、缺陷和铁电薄膜／电极界面与自发电极化的交互作用决定了铁电薄膜的性质和服役行为．文章以铁电存储器和光电子器件应用为背景，选择了具有重大应用前景的Bi4-xLaxTi3O12（BLT）、SrBi2Ta2O9（SBT）、PbZrxTi1-xO3（PET）和LiNbO3（LN）铁电薄膜以及相关的La（Sr，Co）O3（LSCO）和LaNiO3（LNO）等电极材料为研究对象，研究了缺陷电荷和电畴的交互作用和它们在交变外电场中的动力学行为，探明了铁电薄膜疲劳现象的物理本质；从晶格结构与缺陷的观察研究入手，探索了材料铁电性质的起源和优化材料铁电性质的途径；从铁电薄膜／电极界面结构与性质的研究入手，寻找更有效、更稳定的电极材料与结构，从而为器件应用打下了基础；在研究外电场对铁电薄膜生长机制影响的基础上，找到了利用外电场调控铁电薄膜结构的新途径，发展了新的、与半导体器件和光电子器件工艺兼容的制膜方法．     

Fe掺杂氢化非晶碳薄膜制备及其热稳定性能

 以H₂、反式-2-丁烯（T₂B）和二茂铁混合气体为工作气体，用金属有机等离子体增强化学气相沉积法（PECVD）制备了Fe掺杂氢化非晶碳（a-C:H:Fe）薄膜。使用X射线光电子能谱（XPS）对a-C:H:Fe薄膜成分进行了分析。使用台阶仪、场发射扫描电镜（FESEM）、热重分析和紫外可见分光光度计（UV-VIS），对比分析了a-C:H薄膜和a-C:H:Fe薄膜的沉积速率、表面形貌、热稳定性和光学带隙变化。研究表明：相同制备条件下，相比a-C:H薄膜，a-C:H:Fe薄膜的沉积速率高，表面颗粒小，容易碳化，光学带隙变窄。     

Development of protective metal coatings on aluminum by magnetron sputtering

Depositions of copper and titanium coatings on aluminum foils and polished aluminum plates for thier protection against corrosion in alkaline media were performed. The coatings were deposited in three different types of magnetron sputtering systems: a direct current (DC) magnetron discharge, a high current impulse magnetron discharge, and a DC magnetron discharge with melted cathode. Only aluminum foils coated with copper films obtained by combined ion-plasma technology, which included preliminarily sputtering of the aluminum surface with an ion beam, deposition of a dense interlayer in the DC magnetron discharge with ion assistance of initial stage of deposition, and deposition of additional layer in the magnetron discharge with melted cathode, were resistant against 30 wt % NaOH solution.     

用金刚石车削技术制备EOS实验用铝薄膜和铜薄膜

 具有材料理论密度的金属薄膜对于材料高压状态方程(EOS)研究而言具有重要的意义。本文提出采用金刚石车削技术，利用超精密金刚石车床、金刚石圆弧刀具及真空吸附夹持技术，对纯铝和无氧铜进行端面车削，完成了EOS实验用铝薄膜和铜薄膜的车削加工，实现了薄膜密度接近材料理论密度。精加工工艺参数为：进给量0.001 mm/r，主轴转速3000 r/min，切削深度1 μm。采用Form Talysurf series 2型触针式轮廓仪进行测量，结果表明：铝薄膜、铜薄膜厚度可以达到小于10 μm水平，表面均方根粗糙度小于5 nm，原始最大轮廓峰-谷高度小于50 nm，厚度一致性好于99%。     

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.     

电动汽车高压线束电磁脉冲压接装置的研制及实验

采用铝合金高压线束替代铜合金高压线束可帮助电动汽车减少重量、提高续航和降低成本。针对铝与铜由于金属性质差异难以可靠连接的问题,本文提出采用电磁脉冲压接技术连接铝合金高压线束与铜合金接线端子,并研制了一套适用于两者连接的电磁脉冲压接装置,其最大放电能量为28 kJ。压接过程中,随着放电电压的升高,接线端子表面的温度升高。当放电电压为12 kV时,实现了铝合金高压线束与铜合金接线端子的可靠连接。采用光学显微镜分析连接界面的微观结构,并测试其电气性能和机械性能。分析结果表明:电磁脉冲压接技术可实现铝合金高压线束与接线端子、铝合金芯线之间的冶金结合,且连接界面出现了波纹形貌与涡旋形貌。测试结果显示:接头接触电阻测试、振动测试、拉力负荷测试均满足汽车行业标准和电缆接头国家标准。     

On the connection between the strength and conditions of preparation of copper and aluminum vacuum condensates

A method of measuring the microhardness and tensile strength of thin films has been devised, and this has been used to investigate copper and aluminum films obtained by condensation in vacuum. The connection between the strength of the films and the condensation conditions has been studied.     

X-ray diffraction analysis of double-layer systems irradiated by a high-power ion beam

Systems of thin Ni films on a copper substrate, thin Ni films on an aluminum substrate, and St20 steel covered with graphite irradiated by a high-power ion beam of nanosecond duration have been investigated by x-ray diffractometry. The mixing of nickel with aluminum and St20 steel with graphite is revealed. It is shown that the mixing predominantly occurs in the liquid phase and depends on the thermal properties of a film and substrate.     

Microspectral analysis of thin films on wires

A method is described for the microspectral analysis of thin titanium-copper films on molybdenum wires. It is shown that the distribution of copper across the film thickness is irregular and that most of the film contains a small amount of molybdenum (2–5%). Also aluminum was detected in all films, due to diffusion from the corundum crucible during deposition of the film on the wire in a special electro-vacuum device at high temperature (1400–1500° C).     

基于表面等离子激元的超薄金属减色滤波器的研究

基于表面等离子激元的新型超薄金属减色滤波器具有可靠、易制备、高透射率等诸多优点.本文对银、铜、铝、镍等不同金属材料的超薄一维光栅减色滤波器进行了系统研究.仿真获得了透射光谱,理论计算了对应透射光谱的色品坐标,并推导出了银、铜、铝三种材料透射率最低点波长与膜厚、周期关系的经验公式.仿真研究发现:除了镍的选波性较差外,银、铜、铝均表现出较好的、不同的滤波特性,其中银的滤波范围较广,而铜、铝则分别在长、短波段表现出较好的滤波性能.为了验证仿真结果,利用磁控溅射技术和聚焦离子束刻蚀技术进行了三种材料的一维光栅减色滤波器的制备实验,并在显微镜下观察滤波器的颜色效应,结果与理论仿真相符合.研究结果表明:不同金属材料在相同微结构下的颜色效应存在较大差异,可根据实际滤波需要,选择材料和微结构参数来获得最佳性价比的滤波器.     

Al–Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing

Sequential processing of aluminum and copper followed by reactive diffusion annealing is used as a paradigm for the metalorganic chemical vapour deposition (MOCVD) of coatings containing intermetallic alloys. Dimethylethylamine alane and copper N,N′-di-isopropylacetamidinate are used as aluminum and copper precursors, respectively. Deposition is performed on steel and silica substrates at 1.33 kPa and 493–513 K. Different overall compositions in the entire range of the Al–Cu phase diagram are obtained by varying the relative thickness of the two elemental layers while maintaining the overall thickness of the coating close to 1 μm. As-deposited films present a rough morphology attributed to the difficulty of copper to nucleate on aluminum. Post-deposition annealing is monitored by in situ X-ray diffraction, and allows smoothening the microstructure and identifying conditions leading to several Al–Cu phases. Our results establish a proof of principle following which MOCVD of metallic alloys is feasible, and are expected to extend the materials pool for numerous applications, with innovative thin film processing on, and surface properties of complex in shape parts.     

Fabrication of seeded substrates for layer transferrable silicon films

The layer transfer process is one of the most promising methods for low-cost and highly-efficient solar cells, in which transferrable mono-crystalline silicon thin wafers or films can be produced directly from gaseous feed-stocks. In this work,we show an approach to preparing seeded substrates for layer-transferrable silicon films. The commercial silicon wafers are used as mother substrates, on which periodically patterned silicon rod arrays are fabricated, and all of the surfaces of the wafers and rods are sheathed by thermal silicon oxide. Thermal evaporated aluminum film is used to fill the gaps between the rods and as the stiff mask, while polymethyl methacrylate(PMMA) and photoresist are used as the soft mask to seal the gap between the filled aluminum and the rods. Under the joint resist of the stiff and soft masks, the oxide on the rod head is selectively removed by wet etching and the seed site is formed on the rod head. The seeded substrate is obtained after the removal of the masks. This joint mask technique will promote the endeavor of the exploration of mechanically stable,unlimitedly reusable substrates for the kerfless technology.