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1.
We have studied the densification behaviour, microstructure and electrical properties of WO_3 ceramics with V_2O_5 as the additive ranging from 0.5 to 15mol%. Scanning electron microscopic photos indicated that the grain size of WO_3-V_2O_5 specimens is smaller than that of pure WO_3. The addition of V_2O_5 to WO_3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I-V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA/cm^2 for a series of WO_3-V_2O_5 samples. The V0.5mol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a high-temperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO_3-V_2O_5 varistors.  相似文献   

2.
The effects of TiO_2 on sintering and nonlinear electrical properties of(98.5-x)ZnO–0.5MnO_2–0.5Co_2O_3-0.5Bi_2O_(3–x)TiO_2(x = 0.3,0.5,0.7,0.9 mol%) ceramic varistors prepared by the ceramic technique are investigated in this work.The optimum sintering temperature of the prepared samples is deduced by determining the firing shrinkage and water absorption percentages.The optimum sintering temperature is found to be 1200℃,at which each of the samples shows a maximum firing shrinkage and minimum water absorption.Also minimum water absorption appears in a sample of x = 0.9 mol%.Higher sintering temperature and longer sintering time give rise to a reduction in bulk density due to the increased amount of porosity between the large grains of ZnO resulting from the rapid grain growth induced by the liquid phase sintering.The crystal size of ZnO decreases with increasing TiO_2 doping.The addition of TiO_2 improves the nonlinear coefficient and attains its maximum value at x = 0.7 mol% of TiO_2,further addition negatively affects it.A decrease in capacitance consequently in the dielectric constant is recorded with increasing the frequency in a range of 30 kHz–200 kHz.The temperature and composition dependences of the dielectric constant and AC conductivity are also studied.The increase of temperature raises the dielectric constant because it increases ionic response to the field at any particular frequency.  相似文献   

3.
In this Letter, the effects of the iron(Fe) dopant concentration on the nonlinear optical properties of iron-doped ferroelectric X-cut Li Nb O3 crystals plates are studied by using the Z-scan technique with a cw laser at the wavelength of 532 nm. The amount of iron in the compound is varied from 0 to 0.15 mol%. Measurements of nonlinear refractive index n2 and the nonlinear absorption coefficient β are determined. The sign of the nonlinear refractive index is found to be negative and the magnitude is on the order of 10-8cm2∕W. This nonlinear effect increases as the concentration increases from 0 to 0.15 mol%. A good linear relationship is obtained between nonlinear refractive index, nonlinear absorption coefficient, and concentration.  相似文献   

4.
In order to investigate of cobalt-doped interracial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, A1/p- Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant (er and err) and electric modulus (Mr and Mrr), loss tangent (tan~), and AC electrical conductivity (aac) are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.  相似文献   

5.
The mechanism of striations in dielectric barrier discharge in pure neon is studied by a two-dimensional particle- in-cell/Monte Carlo collision (PIC-MCC) model. It is shown that the striations appear in the plasma background, and non-uniform electrical field resulting from ionization and the negative wall charge appear on the dielectric layer above the anode. The sustainment of striations is a non-local kinetic effect of electrons in a stratified field controlled by non-elastic impact with neutral gases. The striations in the transient dielectric barrier discharge are similar to those in dc positive column discharge.  相似文献   

6.
We report on the measurements of the electrical and dielectric properties of Na_(1/2)La_(1/2)Cu_3Ti_4O_(12)(NLCTO) ceramics prepared by high energy ball-milling and conventional sintering without any calcination steps. The x-ray powder diffraction analysis shows that pure perovskite-like CCTO phase is obtained after sintering at 1025?C–1075?C. Higher sintering temperatures result in multi-phase ceramics due to thermal decomposition. Scanning electron microscope observations reveal that the grain size is in a range of ~ 3 μm–5 μm for these ceramics. Impedance spectroscopy measurements performed in a wide frequency range(1 Hz–10 MHz) and at various temperatures(120 K–470 K) are used to study the dielectric and electrical properties of NLCTO ceramics. A good compromise between high ε(5.7 × 10~3 and 4.1 × 10~3 at 1.1 k Hz and 96 k Hz, respectively) and low tan δ(0.161 and 0.126 at 1.1 k Hz and 96 k Hz, respectively) is obtained for the ceramic sintered at 1050℃. The observed high dielectric constant behavior is explained in terms of the internal barrier layer capacitance effect.  相似文献   

7.
Er~(3+)-doped fluoride lanthanum aluminosilicate glasses with compositions of (65-x/2)SiO_2·(25-x/2)Al_2O_3·xAlF_3·9.1La_2O_3·0.6Er_2O_3·0.3Yb_2O_3(x=4, 8, 12, 20, 30) (mol%) were prepared and their glass transition temperatures and spectroscopic properties were investigated.The Ω_2, Ω_4, and Ω_6 intensity parameters of glasses were calculated by Judd-Ofelt theory from absorption curves. It was found that glasses transition temperature and melting temperature decreased with the increase of fluoride content in glass,Ω_2 decreased gradually with the increase of AlF_3 content,but both Ω_4 and Ω_6 did not increase until AlF_3 content increased to 30 mol%.The quantum efficiency of ~4I_(13/2) to ~4I_(15/2) transition of Er~(3+) ions increases with the increase of AlF_3 content in glass.Fluorescent lifetime is longer in glass containing more AlF_3 content.  相似文献   

8.
Bulk SnSe is an excellent thermoelectrical material with the highest figure-of-merit value of ZT=2.&making it promising in applications.Temperature-dependent electrical and thermoelectrical properties of SnSe nanoplates are studied at low temperature.Conductivity drops and rises again as temperature is lowered.The Seebeck coefficient is positive at room temperature and becomes negative at low temperature.The change of the sign of the Seebeck coefficient indicates influence of bipolar transport of the semiconductive SnSe nanoplate.The bipolar transport is caused by the Fermi energy changing with temperature due to different contributions from donors and acceptors at different temperatures.  相似文献   

9.
Ba0.6Sr0.4 TiO3 thin films doped with K were deposited on Pt/Ti/SiO2 /Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Ba0.6Sr0.4 TiO 3 thin films have been studied in detail. The K content in Ba0.6Sr0.4TiO3 thin films has a strong influence on the material’s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Ba0.6Sr0.4 TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4 TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.  相似文献   

10.
The compositions of Sr(NO3)2 crystals grown from an aqueous solution doped with Ba^2 and Pb^2 were characterized by the electron probe microanalysis technique.It was found that Ba^2 is enriched in {100} sectors and Pb^2 in {111} sectors.The Raman spectra of different parts of these crystals at room temperature in the ranges of 1038-1070cm^-1 and 650-1150cm^-1 were investigated.The results indicated that barium and lead shift the Raman dominating peaks to the lower frequency and broaden the full width at half maximum.Furthermore,barium probably degrades the properties of the Sr(NO3)2 Raman shifter while lead is anticipated to improve it.  相似文献   

11.
Ca,Ta-doped TiO2 varistors with high nonlinear coefficients are obtained by a ceramic sintering. The nonlinear electrical and dielectric properties of the samples doped with 0.5mol% Ca and various concentrations of Ta (0.05∼2.0mol%) were investigated. The samples sintered at 1350 °C have nonlinear coefficients of α=5.1∼42.1 and high relative dielectric constants approach 105. The effects of Ta-doping on the nonlinear and dielectric properties of the Ca,Ta-doped TiO2 varistors are studied in greater detail. When the concentration of Ta is 0.5mol%, the sample possesses the highest nonlinear coefficient and a comparatively lower dielectric constant. The effects of Ta and the nonlinear electrical behavior of the TiO2 system are explained by analogy to a grain-boundary atomic defect model. Received: 24 October 2001 / Accepted: 8 January 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +86-10/826-49531, E-mail: wangwanyan@yahoo.com.cn  相似文献   

12.
Single phase Bi1/2Na1/2Cu3Ti4O12 (BNCTO) ceramics with different grain sizes (1.4–4.3 μm) are prepared by a modified Pechini method to investigate their giant dielectric and nonlinear electrical behaviors. The results show that the giant dielectric and nonlinear electrical behaviors are strongly dependent on grain size. With the increment of grain size, the dielectric constant increases monotonically from 14110 (for 1.4 μm sample) to 36183 (for 4.3 μm sample) at 1 kHz, in accompaniment with the breakdown voltage reducing from 112.5 to 43.2 V/mm and the nonlinear coefficient reducing from 4.9 to 3.4. On the basis of the internal barrier layer capacitor (IBLC) model and the IBLC model of Schottky-type potential barrier, an interpretation of the grain size effect on the giant dielectric and nonlinear electrical behaviors is presented.  相似文献   

13.
Glasses of the general formula xLi2O·(20?x)CaO·30P2O5·30V2O5·20Fe2O3 with x=0, 5, 10, 15 and 20 mol% were prepared; IR, density, electrical and dielectric properties have been investigated. Lithia-containing glasses revealed more (P2O7)4?, FeO6, V–O? and PO? groups and mostly have lower densities than those of lithia-free ones. The electrical properties showed random behavior by replacing Li2O for CaO, which has been assigned to the change of the glass structure. The results of activation energy and frequency-dependent conductivity indicate that the conduction proceeds via electronic and ionic mechanisms, the former being dominant. The mechanism responsible for the electronic conduction is mostly thermally activated hopping of electrons from Fe(II) ions to neighboring Fe(III) sites and/or from V4+ to V5+. The dielectric constant (ε′) showed values that depend on the structure of glass according to its content of Li2O. The (ε′) values are ranging between 3 and 41 at room temperature for 1 kHz, yet at high temperatures, glass with 20 mol Li2O exhibits values of 110 and 3600 when measurement was carried out in the range 0.1–1 kHz, and at 5 MHz, respectively.  相似文献   

14.
Dielectric and nonohmic properties of CaCu3Ti4O12 (CCTO) ceramics can be modified by addition of SrTiO3 (STO) in different molar proportions which were fabricated by a modified sol-gel method. XRD results indicated that all modified ceramics showed mixed phase consisting of both CCTO and STO. SEM images and grain size distribution probability also presented the change of microstructure with the addition of STO. The dielectric loss of the CCTO/0.4STO ceramics sintered at 1000 °C can be lower than 0.02 in a wide frequency (1 kHz–10 kHz), especially at 1 kHz, the dielectric loss of this sample is as low as 0.012. Furthermore, excellent nonlinear I–V electrical characteristic (high breakdown voltage to 54.15 kV/cm for CCTO/0.4STO sintered at 1000 °C) was observed as well. All the results indicated that the addition of STO does improve the dielectric properties and nonohmic characteristics of CCTO ceramics dramatically.  相似文献   

15.
脉冲激光沉积法制备钛酸锶钡薄膜及其光电性质   总被引:3,自引:0,他引:3  
用脉冲激光沉积技术制备了钛酸锶钡(Ba0.5Sr0.6TiO3薄膜.用X射线光电子能谱和原子力显微镜分别分析了薄膜的化学组分和表面形貌.在交流信号为50 mV和100 kHz时测量了薄膜的介电系数和介电损耗随外加电场的变化关系,得出最高的介电可调率达到45%.利用单光束纵向Z扫描的方法研究了薄膜的非线性光学性质,得到非线性折射率为5.04×10-6cm2/kW,非线性吸收系数为3.59×10-6m/W,测量所用光源的波长为532 nm,脉宽为55 ps,表明Ba0.5Sr0.5TiO3薄膜有较快的非线性光学响应.  相似文献   

16.
The complex potassium trioxalatoferrate (III) trihydrate {K3(Fe(C2O4)3 · 3H2O)} was synthesised and characterised by energy dispersion X-ray fluorescence (XRF) and X-ray diffraction (XRD). The electrical and dielectric properties of the complex pellet were studied by ac- and dc-techniques in room temperature and in a temperature range of 293–373 K. The data of the ac conductivity as a function of frequency in a frequency range of 1–100 kHz follow the correlated barrier hopping CBH model and the parameters of the model were determined and connecting them with the optical properties. The temperature dependence of dc conductivity shows that the semiconducting behaviour of conduction phenomenon in the complex is realised by hopping mechanism between localised states and the minimum hopping distance was determined. High relative permittivity of about 30 at 100 kHz was obtained for the complex, which can find technological applications like alternative for the SiO2 insulator in MOS devices.  相似文献   

17.
Novel strontium bismuth tantalate (Sr0.8Bi2.2Ta2O9 (SBT)) modified with 3 and 5 mol% ratio barium silicate (Ba2SiO4) thin films were grown on Pt(100?nm)/Ti(50?nm)/SiO2/Si(100) substrates by spin coating technique. The influence of barium silicate doping in SBT was studied from the view point of changing dielectric and ferroelectric properties like dielectric constant (εr) and remnant polarization (Pr). Well crystallized thin films showed convenient ferroelectric properties with comparatively lower Pr in the range between 1.52 and 0.44 µC/cm2 and smaller εr value of 163. Thus, with such reduced values of Pr and εr barium silicate modified SBT offers a useful potential to be used in Ferroelectric Field Effect Transistor (FeFET) type (1T-type) Ferroelectric Random Access Memories (FeRAMs) upon improving insulation properties.  相似文献   

18.
In this paper, atmospheric pressure glow discharges (APGD) in argon generated in parallel plate dielectric barrier discharge system is investigated by means of electrical and optical measurements. Using a high voltage (0–20 kV) power supply operating at 10–30 kHz, homogeneous and steady APGD has been observed between the electrodes with gap spacing from 0.5 mm to 2 mm and with a dielectric barrier of thickness 2 mm while argon gas is fed at a controlled flow rate of 1 l/min. The electron temperature and electron density of the plasma are determined by means of optical emission spectroscopy. Our results show that the electron density of the discharge obtained is of the order of 1016 cm???3 while the electron temperature is estimated to be 0.65 eV. The important result is that electron density determined from the line intensity ratio method and stark broadening method are in very good agreement. The Lissajous figure is used to estimate the energy deposited to the glow discharge. It is found that the energy deposited to the discharge is in the range of 20 to 25 μJ with a discharge voltage of 1.85 kV. The energy deposited to the discharge is observed to be higher at smaller gas spacing. The glow discharge plasma is tested to be effective in reducing the hydrophobicity of polyethylene film significantly.  相似文献   

19.
H_2O-based and O_3-based La_xAl_yO nanolaminate films were deposited on Si substrates by atomic layer deposition(ALD). Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the La_xAl_yO films were studied. Chemical bonds in the La_xAl_yO films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy(XPS). The preliminary testing results indicate that the La_xAl_yO films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness(EOT), electrical properties, and stability.  相似文献   

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