High rotatable magnetic anisotropy in MnBi thin films

The variations of the structural and magnetic properties of Bi/Mn/Bi and Mn/Bi/Mn trilayer film systems of equiatomic composition in the process of vacuum annealing are studied. The annealing of Bi/Mn/Bi films at a temperature of 270°C for an hour results in the synthesis of the well-studied highly oriented low-temperature LT-MnBi(001) phase with the perpendicular magnetic anisotropy K _u ～ 1.1 × 10⁷ erg/cm³ and coercivity H _C ～ 1.5 kOe. In contrast to Bi/Mn/Bi, polycrystalline LT-MnBi nanoclusters are formed in Mn/Bi/Mn films under the same annealing conditions. A high rotatable magnetic anisotropy exceeding the shape anisotropy is detected in the films under consideration: the easy axis of anisotropy with the inclusion of the delay angle in magnetic fields above the coercivity H > H _C = 9.0 kOe can be oriented in any spatial direction. It is shown that the nature of rotatable magnetic anisotropy is due to the structural coexistence of epitaxially coupled LT-MnBi and QHTP-Mn_1.08Bi phases. The reported experimental results indicate the existence of a new class of ferromagnetic film media with the spatially tunable easy axis.     

Sequence of phase formation during solid-state synthesis in Al/Ni films (Al: Ni = 60: 40 at %)

The structure formed during solid-state synthesis in thin bilayer Al/Ni films with the ratio Al: Ni = 60: 40 (at %) has been investigated. The films were obtained by thermal evaporation in vacuum with a residual pressure of 10^?5–10^?6 Torr. Solid-state synthesis was performed by diffusion reaction. The sequence of phase formation upon vacuum annealing of bilayer Al/Ni films has been established: Al + Ni → Al₃Ni + Ni (T _ann = 180°C) → Al₃Ni₂ (T _ann = 220°C).     

Simple co-precipitation synthesis of high-voltage spinel cathodes with different Ni/Mn ratios for lithium-ion batteries

The high-voltage spinel is a promising cathode material in next generation of lithium-ion batteries. Samples LiNi_0.5???xMn_1.5?+?xO₄ (x?=?0, 0.05, 0.1) are synthesized by a simple co-precipitation method, in which pH value and temperature conditions do not need control. In the simple co-precipitation method, NaHCO₃ solution is poured into transition metal solution to produce precursor. Ni and Mn are distributed uniformly in the products. The as-prepared samples are composed of ~?200 nm primary particles. Samples LiNi_0.5???xMn_1.5?+?xO₄ (x?=?0, 0.05, 0.1) are also tested to study the effects of different Ni/Mn ratios. Sample LiNi_0.5Mn_1.5O₄ delivers discharge capacities of 130 mAh g^?1 at 0.2 C. The decreasing of Ni/Mn ratio in samples reduces specific capacity. With the decreasing of Ni/Mn ratios in spinel, amount of Mn³⁺ are increased. Attributed to its high Mn³⁺ contents, sample LiNi_0.4Mn_1.6O₄ delivers the highest discharge capacity of 106 mAh g^?1 at a large current density of 15 C, keeping 84.5% of that at 0.2 C rate. With the increasing of Ni/Mn ratios in spinel, cycling performance is improved. Sample LiNi_0.5Mn_1.5O₄ shows the best cycling stability, keeping 94.4% and 90.4% of the highest discharge capacities after 500 cycles at 1 C and 1000 cycles at 5 C.     

Superconductor-insulator transition tuned by annealing in Bi-film on top of Co-clusters

We deposited amorphous Bi films with a thickness between 3 and 6.5 nm at 4.2 K on top of previously deposited Co clusters having a mean size of ～4.5 nm. The Co cluster layers thickness was between 2.3 and 5 nm. In-situ electrical transport measurements were performed between 2 and 100 K. Measurements on as-prepared samples having a Bi layer thickness of 3.0 nm show hopping (tunneling) conductivity as σ(T) = σ ₀ exp[?(T ₀/T)^1/2] above the superconducting transition temperature T _C and re-entrance behavior again with hopping (tunneling) conductivity below T _C . Annealing of films having a Bi layer thickness of 5.5 nm results in a decrease of resistivity, with variable-range hopping conduction behavior as σ(T) = σ ₀ exp[?(T ₀/T)^1/3 ]. Quite different are the findings for films having a Bi layer thickness of 6.5 nm: annealing of these films results in a power-law behavior as σ(T) = σ ₀ T ^α with α = 2/3, indicating that these films are close to a quantum critical point separating superconducting and insulating phases. A phase diagram including all experimental observations is proposed.     

Das Kernquadrupolmoment des Mn55

With a recording photoelectric Fabry-Perot spectrometer and an atomic-beam light source the hyperfine structure of the Mn I-resonance linesλ=4031 Å,λ=4033 Å,λ=4034 Å (3d ⁵4s ² a ⁶ S _5/2?3d ⁵4s4p z ⁶ P _7/2,5/2,3/2 ⁰)and of the inter-combination linesλ=5395 Å andλ=5433 Å (3d ⁵4s ² a ⁶ S _5/2?3d ⁵4s4p z ⁸ P _7/2,5/2 ⁰) was measured. Furthermore the resonance lines have been measured with a pulsed atomic-beam in absorption. In this case the quotient (I ₀(ν)?I(ν))/I ₀(ν) was recorded, whereI(ν)=I ₀(ν) exp(?α(ν)d) is the observed intensity with absorption andI ₀(ν) the intensity of the light source. From the hyperfine structure splitting the value of the electric quadrupole moment of Mn⁵⁵ was derived to be:Q(Mn⁵⁵)=+(0.35±0.05)·10^?24 cm².     

Investigation of the optimal annealing temperature for the enhanced thermoelectric properties of MOCVD-grown ZnO films

In this study, we demonstrate the optimization of the annealing temperature for enhanced thermoelectric properties of ZnO. Thin films of ZnO are grown on a sapphire substrate using the metal organic chemical Vapor Deposition (MOCVD) technique. The grown films are annealed in an oxygen environment at 600–1000°C, with a step of 100°C for one hour. Seebeck measurements at room temperature revealed that the Seebeck coefficient of the sample that was not annealed was 152 μV/K, having a carrier concentration of N _D ~ 1.46 × 10¹⁸ cm^–3. The Seebeck coefficient of the annealed films increased from 212 to 415 μV/K up to 900°C and then decreased at 1000°C. The power factor is calculated and found to have an increasing trend with the annealing temperature. This observation is explained by the theory of Johnson and Lark–Horovitz that thermoelectric properties are enhanced by improving the structure of ZnO thin films. The Hall measurements and PL data strongly justify the proposed argument.     

Influence of heat treatment process in In<Subscript>2</Subscript>O<Subscript>3</Subscript>-MWCNTs as photoanode in DSSCs

Indium oxide-multi-walled carbon nanotubes (In₂O₃-MWCNTs) were prepared by sol-gel method for DSSCs. The synthesis of indium oxide (In₂O₃) was carried out by dissolving indium chloride (InCl₃) in a solvent of 2-methoxyethanol. Different annealing temperatures of 400, 450, 500, 550, and 600 °C were proposed in this study. The changes in the structural properties were analyzed by means of X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis. The XRD spectrum estimated the average crystallite sizes of 3 nm for each sample. AFM results indicated very rough surface area of the films where it increased linearly from 1.8 to 11 nm as the annealing temperature increases. The In₂O₃-MWCNTs-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (J _sc ), open circuit voltage (V _oc ), and fill factor (FF) of 1.13 %, 5.5 mA/cm², 0.53 V, and 0.42, respectively. Even though the film annealed at 450 °C exhibited low τ _eff, it achieved the greatest D _eff of 29.67 cm² s^?1 which provides an efficient pathway for the photogenerated electrons with minimum electron recombination loss that increased the J _sc and V _oc in the DSSC. The obtained structural and electron transport analysis was proposed as a suitable benchmark for In₂O₃-MWCNTs-based dye-sensitized solar cell (DSSCs) application. Hence, this study suggests that the optimum temperature for In₂O₃-MWCNTs is at annealing temperature of 450 °C prepared via sol-gel method.     

Characteristics of surface acoustic waves in (11$$\bar 2$$ 0)ZnO film/ R-sapphire substrate structures

(11\(\bar 2\)0)ZnO film/R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity (v _p), electromechanical coupling coefficient (k ²), temperature coefficient of frequency (TCF) and reflection coefficient (r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k ² of 4.95% in (90°, 90°, 0°) (11\(\bar 2\)0)ZnO film/R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\(\bar 2\)0)ZnO film/R-sapphire substrate has a maximum k ² of 3.86% associated with a phase velocity of 3400 m/s. And (11\(\bar 2\)0)ZnO film/R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.     

Lichtausbeute von α-Teilchen in kristallinem und dampfförmigem Anthrazen

The light output,S _v by α-particles stopped in anthracene vapour has been measured as a function of vapour pressure (10–700 mm Hg) and temperature (250°C–385°C). The comparison of the results for an idealised vapour neglecting collisions with the light output,S _c, from anthracene crystals by α-particles impinging parallel to thec′-axis yields the unexpected results: S_v(8.78 MeV)/S_c(8.78 MeV)=0.46±0.05 andS _v(6.05 MeV)/S _c(6.05 MeV)=0.57±0.08. A simple model assuming quenching by collisions of the vapour molecules could explain the observed dependence of the light output on the vapour pressure at fixed temperature. The path lengthsR _v of α-particles in anthracene vapour were determined to be R_v(8.78 MeV)=(9.0±0.6) mg/cm²,R _v(6.05 MeV)=(4.9±0.6) mg/cm² and the ratio of the light output by the two different α-energiesS _v(8.78 MeV)/S _v(6.05 MeV)=1.42±0.2.     

High-pressure induced magnetoresistance in <Emphasis Type="Italic">p</Emphasis>-InAs:Mn and <Emphasis Type="Italic">p</Emphasis>-CdGeAs<Subscript>2</Subscript>:Mn

The baric (P ≤ 5GPa) and magnetic-field (H ≤ 5 kOe) dependences of the transverse magnetore-sistance Δρ _xx /ρ₀ have been measured for p-InAs (R _H = 22.5 cm³/C, ρ = 0.15 Ω cm) and the new ferromag-netic semiconductor p-CdGeAs₂ (R _H = 5 cm³/C, ρ = 0.62 Ω cm), doped with a magnetic impurity (Mn), near the temperature T = 297 K. The dependences Δρ _xx /ρ₀ (P, H) for p-InAs:Mn and p-CdGeAs₂:Mn exhibit a magnetoresistive effect with an increase in pressure, and a pressure-induced magnetoresistance hysteresis is observed in p-CdGeAs₂:Mn with a pressure drop.     

Spin-Wave Resonance in Ge : Mn Thin Films with Percolation Magnetic Ordering

The mechanism of excitation and propagation of spin waves in Ge: Mn thin films with different nominal manganese concentrations (2, 4, and 8 at % Mn) with percolation magnetic ordering is explored. Concentration dependencies of Curie temperature T_C(n) and spin wave rigidity D(n) are determined, which enables to find the index of correlation distance. An exotic percolation magnetic state of samples of Ge: Mn thin films is confirmed by rectifying experimental dependences D(n) and D/T_C(n) in coordinates accepted in the percolation theory.     

Chemical and phase compositions of multilayer nanoperiodic <Emphasis Type="Italic">a</Emphasis>-SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/ZrO<Subscript>2</Subscript> structures subjected to high-temperature annealing

The chemical and the phase compositions of multilayer nanoperiodic SiO _x /ZrO₂ structures prepared by vacuum evaporation from separated sources and subjected to high-temperature annealing have been studied by X-ray photoelectron spectroscopy with a layer-by-layer etching. It is found that, under deposition conditions used, the silicon suboxide layers had the stoichiometric coefficient x ~1.8 and the zirconium-containing layers were the stoichiometric zirconium dioxide. It was found, using X-ray photoelectron spectroscopy, that annealing of the multilayer structures at 1000°C leads to mutual diffusion of the components and chemical interaction between ZrO₂ and SiO _x with predominant formation of zirconium silicate at heteroboundaries of the structures. The SiO _x layers of the annealed nanostructures contained ~5 at % elemental silicon as a result of the phase separation and the formation of fine silicon nanocrystals.     

Study of structural and electrical properties of thin NiO<Subscript>x</Subscript> films prepared by ion beam sputtering of Ni and subsequent thermo-oxidation

Nickel oxide thin films were prepared by thermal annealing of thin Ni films (thickness ca 47?nm) deposited by ion beam sputtering. The thermal annealing was performed at 350 °C and 400 °C with elected time (1–7 hours) in a quartz furnace opened to air. During annealing the samples underwent structural changes, as well as changes of their electrical properties. The structural properties (surface morphology and occurrence of crystalline phases) were analyzed by the AFM and XRD methods, O and Ni depth concentration profiles by the NRA method, and electrical properties (sheet resistance) by the van der Pauw 4-point technique. The sheet resistance (R _S ) of the as-deposited sample was found to be 12.03 Ω/□; after open air thermal annealing at 350 °C for 1 h the value was found to be almost the same, 11.67 Ω/□. After 2 h of annealing, however, a sharp increase in the sheet resistance (R _S = 1.46 MΩ/□) was observed. At this stage the deposit formed largely oxidized Ni layer with a distinct polycrystalline structure. The sharp increase of sheet resistance was ascribed to the oxidation of the Ni layer, leaving only a smaller amount of isolated Ni particles unoxidized. Almost complete oxidation was found after 7 h of annealing at 350 °C. At 400 °C was almost complete oxidation recorded already after 1 h of annealing.     

Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures

The thermal stability of F ion-implanted isolated AlGaN/GaN heterostructures was investigated,with B ion-implanted isolation shown for comparison.The sheet resistance of as-implanted samples with F ions was lower than that with B ions due to enhanced hopping conduction.The leakage current for both implanted samples initially decreased and then increased with increases in post-annealing temperature,indicating a damage-induced isolation mechanism.Leakage reached a minimum value after 400~oC annealing,which was over 10～8times lower than the saturated current(I_(sat))of the as-grown structure,suggesting a successful isolation.After relatively high-temperature annealing,the leakage for F implantation showed a small change,whereas that for B implantation showed significant increase,suggesting that F-implanted isolation exhibited excellent thermal stability.Leakage and F or B ion-implanted samples indicated that the leakage current originated from the region above the high-resistance GaN layer.Variation in E_arevealed that the optimal contributing states for conduction changed with operating temperature,annealing temperature,and ion species.     

Low-temperature transport and ferromagnetism in GaAs-based structures with Mn

GaAs structures with implanted Mn and, additionally, with Mg for increasing the hole concentration in the implanted Mn layer are synthesized and investigated. SQUID magnetometer measurements revealed the existence of ferromagnetism in the temperature range 4.2 K ≤ T < 400 K, which is associated with the formation of the Ga_1?x Mn _x As solid solution and MnAs and Ga_1?y Mn _y clusters in the sample as a result of rapid high-temperature annealing. At temperatures from 4.2 to approximately 200 K, the anomalous Hall effect associated with additional magnetization of the sample is observed. As the temperature increases from 4.2 K, the colossal negative magnetoresistance is transformed into a positive magnetoresistance at T ≈ 35 K.     

Correlation between raman spectra and structural properties of Zn<Subscript>2 − 2<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript>x</Subscript>In<Subscript>x</Subscript>Se<Subscript>2</Subscript> films

The Raman spectra of Zn_{2 ? 2x} Cu_xIn_xSe₂ (ZCIS) semiconductor films designed for use as optically active layers in thin-film solar cells have been investigated. The Raman spectra of ZCIS films are characterized by the presence of the dominant mode A ₁, which is observed in A^IB^IIIC ₂ ^VI compounds with chalcopyrite structure. The spectra of CuInSe₂ films (x = 1) obtained at low temperatures (T ≤ 400°C) contain and additional mode at 258 cm^?1, which is due to the presence of the impurity Cu_xSe phase. All modes observed in the spectra of ZCIS films with a Zn concentration ≤20 at % obtained under optimal conditions (520–540°C) correspond to the symmetry of vibrations in the chalcopyrite structure. The broadening and blue shift of the A ₁ mode occurring with an increase in the Zn concentration are indicative of degradation of the chalcopyrite crystal structure and the chalcopyrite → sphalerite phase transition at Zn concentrations exceeding 20 at %.     

Evolution of surface morphology during the growth of amorphous and polycrystalline silicon films

The evolution of the surface morphology of LPCVD poly-Si films (deposition temperature 620°C), a-Si films (deposition temperature 550°C) and poly-Si films, obtained by the crystallization of a-Si is investigated in the thickness range 40–500 nm. It is found that upon an increase in the thickness from 40 to 500 nm, the surface roughness (parameters S _q , S _z , S _v ) is increased for poly-Si, while in the case of a-Si and poly-Si obtained by crystallization a-Si, on the contrary, decreases. The correlation length (S _al ) increases for all three types of silicon films. Poly-Si films, obtained by the crystallization of a-Si, as compared to LPCVD poly-Si films have a significantly lower surface roughness, respectively, S _q two times less at a thickness of 40 nm and sixteen times less at 500 nm. In contrast to thick films, thin a-Si films (at thicknesses of less than 40 nm) have a granular structure, which is especially pronounced at an average thickness of about 20 nm and there is a maximum on the dependence of the roughness S _q on the thickness.     

Der Zerfall des Lu176m

The decay of Lu^176m has been investigated. TheK-conversion coefficient α _K of the 88,3 keV niveau of Hf¹⁷⁶ has been determined to α _K =1,35±0,07. Theβ-branching ratio to the 0+ and 2+ niveau of Hf¹⁷⁶ has been measured by means of aβ-γ-coincidental technique. (60,4±6,1)% of Lu^176m decay into the 2+ niveau and (39,6±6,1)% into the 0+ niveau of Hf¹⁷⁶.K-capture of Lu^176m to Yb¹⁷⁶ was not found. If there is any, it is less than 0,1% of all decays.     

Effect of annealing temperature on the structural reorganization of Eu<Superscript>3+</Superscript> optical centers in Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>-BiOF gel films

The dependence of the structural reorganization of Eu³⁺ optical centers in Al₂O₃-Eu₂O₃-BiOF films on the annealing temperature has been investigated. It is shown by the methods of crystal field theory and computer simulation that the increase in the annealing temperature from 700 to 1100 °C leads to removal of bismuth from Eu-O-Bi complex centers with the C _3V symmetry in the Al₂O₃ structure and the change in symmetry from D ₃ to O _h for a large fraction of EuAlO₃ centers.     

Magnetic Resonance Properties of a Nanogranular Ni<Subscript><Emphasis Type="Italic">m</Emphasis></Subscript>C<Subscript>100 − <Emphasis Type="Italic">m</Emphasis></Subscript> Film Structure

Magnetic resonance properties characteristic of nanogranular film structure Ni_mC_{100 ? m} with different concentrations m of its magnetic phase are studied. Samples are subjected to annealing at temperatures of 200 and 300°C. With tangential magnetization in the planes of films with m ranging from 70 to 89.8 at %, anisotropy is observed for the resonance field and the width of the absorption line. This anisotropy is explained by the uneven shapes of magnetic granules along different directions in the films.