Fe–Ag granular multilayers and heterostructures studied in applied magnetic field

An (0.2 nm ⁵⁷Fe / 2.6 nm Ag)₇₅ granular multilayer sample and heterostructures with additional continuous Fe layers in different sequences were studied in magnetic field applied at different temperatures. The broadening of the superparamagnetic lines was found to be very similar for the three samples in applied fields both parallel and perpendicular to the sample plane. While the layer sequence has no significant effect on the superparamagnetic properties, the continuous magnetic layers follow a different approach to saturation in perpendicular magnetic fields.     

High-frequency FeCoNiNbB–SiO2 nano-granular films with high resistivity and adjustable resonance frequency from 1.3 to 7.8?GHz

A series of (FeCoNiNbB) _x –(SiO₂)_1−x nano-granular thin films were fabricated by magnetron sputtering with different oblique incidence angles θ. High-resolution transmission electron micrographs show that the films consist of amorphous CoFeM (M = Ni, Nb, B) alloy particles with diameter about 2 nm surrounded by amorphous SiO₂ matrix. Excellent soft magnetic properties have been achieved with a variable in-plane uniaxial magnetic anisotropy field H _k0, which increases monotonically with θ and x, and decreases with the composition of B in FeCoM. For one typical sample of x=0.63 with θ=30°, H _ch and H _ce are 4.2 Oe and 5.4 Oe, respectively, ρ reaches 12.5 mΩ cm and 4π M _s and H _k0 are 5.70 kG s and 92 Oe, respectively, which lead to a high ferromagnetic resonance frequency f _r of 2.2 GHz. Based on the analysis of experimental results, two sources for the origin of the magnetic anisotropy, namely anisotropic magnetic coupling and orientation order of atomic pairs, are suggested.     

A comparison of the magnetic anisotropy of [001] and [111] oriented Co/Pd Multilayers

Superlattices of [001]_fcc Co/Pd with varying Co thicknesses from one to eight atomic layers per modulation period were epitaxially grown on NaCl by vapour deposition in UHV. Transmission electron diffraction indicates lattice coherence between the Co and the Pd layers for Co thicknesses up to six atomic layers. If deposited at a substrate temperatureT _s=50°C, only the superlattices containing Ci-monolayers show perpendicular magnetization. By raisingT _s to 200°C, the perpendicular anisotropy for Co monolayers is increased, and is also observed for Co bilayers. We suggest that this is due tolayer smoothening, which increases Néel's interface anisotropy. For more than 6 atomic layers of Co a loss of coherence is observed atT _s=50°C, accompanied by a structure transformation to hcp Co with a (0001)_Co(111)_Pd orientation.Non-epitaxial polycrystalline [111]-multilayers have a different anisotropy versus thickness behaviour. For such multilayers the range of Co thicknesses giving perpendicular magnetization is extended from 8 Å up to 12 Å atT _s=200°C. The different behaviour of the single crystal [001] films is caused by a strong volume contribution to the anisotropy, which favours in-plane magnetization, opposing the perpendicular interface anisotropy. This easy-plane term is attributed to magneto-elastic anisotropy due to stretching of the Co layers, via a positive magnetostriction.     

Synthesis, crystal structure, thermal and dielectric properties of bis(p-phenylenediammonium) chloride hexachlorobismuthate(III) monohydrate [C6H4(NH3)2]2ClBiCl6.H2O

Synthesis, crystal structure, and dielectric properties of [C₆H₄(NH₃)₂]₂ClBiCl₆.H₂O are reported. The compound crystallizes in the monoclinic system with space group P2₁/n. The unit cell dimensions are a = 9.836(5), b = 19.582(5), c = 13.082(5) ?, β = 104.731(5)° with Z = 4. The atomic arrangement can be described by an alternation of organic and inorganic layers. The anionic layer is built up of octahedral of [BiCl₆]^3- arranged in sandwich between the organic layers. The crystal packing is governed by means of the ionic N–H···Cl hydrogen bonds, forming a three-dimensional network. The dielectric properties have been investigated at temperature range from 297 to 410 K at various frequencies (10 Hz–100 kHz). Dielectric studies were performed to confirm results obtained with thermal analysis. The evolution of dielectric constant as a function of temperature and frequency of single crystal has been investigated in order to determine some related parameters.     

Anisotropy of the upper critical field and specific heat in V3Si — a superconductor with cubic symmetry

The specific heat of a V₃Si single crystal (T _c=17 K, H _c2=20 T) in magnetic fields up to 8 T isinvestigated experimentally for three orientations of the field relative to the crystallographic directions — H∥〈001〉, H∥〈110〉, and H∥〈111〉. Both the upper critical magnetic field and the specific heat of the mixed state are observed to depend on the orientation of the magnetic field relative to the crystallographic directions (anisotropy): The critical field reaches its maximum value and the specific heat its minimum value in a field along the 〈001〉 direction. The anisotropy scale in both phenomena increases as the magnetic field and reaches 3% in a 6 T field. The interrelationship of the upper critical field anisotropy and the specific-heat anisotropy in type-II superconductors is studied. It is shown that the anisotropy of the specific heat in the mixed state in weak fields can serve as a criterion for nontrivial pairing. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 1, 26–29 (10 January 1999)     

Fluorescent Property of the Gd<Superscript>3+</Superscript>-Doped Terbium Complexes and Crystal Structure of [Tb(TPTZ)(H<Subscript>2</Subscript>O)<Subscript>6</Subscript>]Cl<Subscript>3</Subscript>·3H<Subscript>2</Subscript>O

The complex of Tb(TPTZ)Cl₃·3H₂O was synthesized by adding the ethyl alcohol solution of TbCl₃ (1 mmol) to the solution of 2,4,6-tris-(2-pyridyl)-s-triazine(TPTZ,1 mmol) with constant stirring. The solution which had been filtered was kept at the room temperature for 4 weeks, and then a kind of transparent crystal was formed. Besides, nine kinds of solid complexes in the different molar proportion of terbium to gadolinium had been synthesized by adopting the similar method mentioned above. It was inferred from the elemental analysis and rare earth complexometry that the composition of these complexes is (Tb_xGd_y)(TPTZ)Cl₃·3H₂O (x : y = 0.9 : 0.1, 0.8 : 0.2, 0.7 : 0.3, 0.6 : 0.4, 0.5 : 0.5, 0.4 : 0.6, 0.3 : 0.7, 0.2 : 0.8, 0.1 : 0.9). The absorption spectra and photoluminescence of the complexes were determined in dimethylsulfoxide (DMF), which showed that the excitation of the complexes is mostly ligand based. The triplet state energy level of TPTZ was measured, indicating that the lowest excitation state energy level of Tb(III) and the triplet state energy level of TPTZ match well each other. The fluorescent data indicated that the fluorescent emission intensity of Tb³⁺ ions would be enhanced in the complexes after terbium was doped with Gd³⁺ ion. When x : y was 0.5 : 0.5, the fluorescent emission intensity was the largest. The result obtained by testing the X-ray diffraction of the monocrystal revealed that the molecular formula of the mono-crystal complex is [Tb(TPTZ)(H₂O)₆]Cl₃·3H₂O. The number of metal ion coordinates is nine, and the tridentate TPTZ and six water molecules are bonded with terbium respectively. Besides, it also revealed that the monocrystal belongs to the monoclinic system, and space group Cc with the following unit cell parameters is a = 1.4785 (3) nm, b = 1.0547 (2) nm, c = 1.7385 (4) nm, β = 94.42 (3)°, V = 2.7028 (9) nm³ and Z = 4.     

Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Magnetism,exchange and crystal field parameters in the orbitally unquenched Ising antiferromagnet FePS3

FePS₃ is a layered antiferromagnet (T _N=123 K) with a marked Ising anisotropy in magnetic properties. The anisotropy arises from the combined effect of the trigonal distortion from octahedral symmetry and spin-orbit coupling on the orbitally degenerate⁵ T _2g ground state of the Fe²⁺ ion. The anisotropic paramagnetic susceptibilities are interpreted in terms of the zero field Hamiltonian, ℋ=Σ_i [δ(L _iz ² −2)+|λ|L _i .S _i ]−Σ _ij J _ij S _i .S _j . The crystal field trigonal distortion parameter Δ, the spin-orbit coupling λ and the isotropic Heisenberg exchange,J _ij, were evaluated from an analysis of the high temperature paramagnetic susceptibility data using the Correlated Effective Field (CEF) theory for many-body magnetism developed by Lines. Good agreement with experiment were obtained for Δ/k=215.5 K; λ/k=166.5 K;J _nn k=27.7 K; andJ _nnn k=−2.3 K. Using these values of the crystal field and exchange parameters the CEF predicts aT _N=122 K for FePS₃, which is remarkably close to the observed value of theT _N. The accuracy of the CEF approximation was also ascertained by comparing the calculated susceptibilities in the CEF with the experimental susceptibility for the isotropic Heisenberg layered antiferromagnet MnPS₃, for which the high temperature series expansion susceptibility is available.     

Magnetic hyperfine field of Se in nickel measured by means of the DPAC method

The magnetic hyperfine field of Se in nickel was measured by means of the time-differential perturbed angular correlation (DPAC) technique, using the 755–250 keV γ-ray cascade fed in the decay of⁷⁷Br. A value ofB _hf(NiSe)=+15.11(35) T was obtained at room temperature. The half-life of the 250 keV state and the anisotropy of the 755–250 keV cascade were found to beT _1/2=9.68(6) ns andA ₂₂=−0.454(9), respectively.     

Reduction of hysteresis loss in LaFe11.7Si1.3Hx hydrides with significant magnetocaloric effects

Magnetic properties and magnetocaloric effects (MCEs) have been investigated in hydrogenated LaFe_11.7 Si_1.3H _x (x=0,1.37, and 2.07) compounds. It is found that the Curie temperature, T _C, can be tuned from 192 to 338 K by adjusting the hydrogen content from 0 to 2.07. It is attractive that both thermal and magnetic hysteresis are remarkably reduced because of the weakness of the itinerant-electron metamagnetic transition after hydrogenation. The maximal hysteresis loss at T _C decreases from 33.4 to 8.8 J/kg as x increases from 0 to 2.07. For the samples with x=0,1.37, and 2.07, the maximal values of the isothermal magnetic entropy change, ΔS _M, are 20.9, 15.1, and 15.83 J/kg K for the increasing field and 20.76 J/kg K, 14.53 J/kg K and 15.61 J/kg K for the decreasing field at T _C, with efficient refrigeration capacities of 439, 330, and 304 J/kg for a field change of 0–5 T, respectively. Large reversible MCE and small hysteresis with considerable refrigeration capacity indicate the potential of LaFe_11.7Si_1.3H _x hydride as a candidate magnetic refrigerant around room temperature.     

Temperature dependences of the high-field magnetization of dilute frustrated ferrimagnetic spinels

Results are presented of an investigation of the magnetic properties of dilute frustrated ferrimagnetic spinels Li_0.5Fe_2.5−x Ga_xO₄ (x=0.8–1.2), which characterize the main parameters of the ferrimagnetic state and provide evidence of local violation of collinear spin ordering and frustrations. In particular, measurements were made of the concentration dependences of the magnetic moment n ₀(x) and the Curie point T _c (x), the magnetization isotherms σ _T (H) at T=4.2 K and H⩽10 kOe, and also the low-and high-field magnetization polytherms σ _H (T). It was established that for x⩾0.8 in fields exceeding the technical saturation field H _s ∼2 kOe, the temperature dependences of the high-field magnetization σ _H (T) between 4.2 and 230 K cannot be described by the Bloch T ^3/2 law whereas this law is satisfied for undiluted Li spinel (x=0). Over the entire temperature range (4.2–230 K) the experimental curves σ _H (T) may be approximated by σ _H (T)=σ ₀(1−AT ^3/2 − BT ^5/2) for x=0.8–1.0 and σ _H (T)=σ ₀[1−CT ^3/2exp(μ(H−H ₀)/k _B T)] for x=1.1, 1.2, where μH ₀∼15 K is the internal field produced by competition between exchange interactions and frustrations. Fiz. Tverd. Tela (St. Petersburg) 40, 1075–1079 (June 1998)     

Charge density wave and superconductivity in 2H- and 4H-NbSe<Subscript>2</Subscript>: A revisit

Good-quality hexagonal NbSe₂ single crystals were prepared. In 2H-NbSe₂, superconducting and charge density wave (CDW) transitions were found at T _s = 7.4 K and T _c = 35 K respectively as reported previously. We have noticed that these two transitions are changed to T _c = 42 K and T _s = 6.5 K, in 4H-NbSe₂. Thermopower has shown clear anomaly at CDW transitions. The anisotropic upper critical field was calculated as ~3 and 6.3 for 2H- and 4H-single crystals around t = 0.81, where t = T/T _s, from resistivity and explained in terms of coherence length. From the relation, H_c2 (T)=H_c2 (0)[1-t²]H_{\rm c2} (T)=H_{\rm c2} (0)[1-t^2], H_c2^l (0)H_{\rm c2}^l (0) was calculated as ~8.15 T and 16.98 T at t = 0.84 in 2H-NbSe₂ and 4H-NbSe₂ respectively. However, H_c2^t (0) = 2.68H_{\rm c2}^t (0) = 2.68T for both single crystals.     

Precise measurement of the magnetic moment of17F(I x =5/2+,T 1/2=64.5 s) and its hyperfine interactions in ionic crystals

Hyperfine interactions of β-emitting¹⁷F implanted in single crystals of NaF and CaF₂ were studied. The nuclear magnetic moment of theT ^π=5/2⁺ state was determined with an improved precision to be |μ(¹⁷F;π=5/2⁺,T _1/2=64.5s|=4.72130±0.00025. nm. Isoscalar magnetic moments of the doubly closed shell ±1 nucleon nuclei around mass number 16 were derived and the effective nucleon mass in the nucleus was discussed.     

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

The electrical conduction mechanisms in various highly resistive GaN layers of Al _x Ga_1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal–insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln (ρ) is proportional to T ^−1/4 for the insulating sample and proportional to T ^−1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.     

Sub-Doppler fluorescence on the atomic <Emphasis Type="Italic">D</Emphasis><Subscript>2</Subscript> line of a submicron rubidium-vapor layer

An extremely thin cell (ETC) with the thickness of a Rb atomic vapor layer in the range of 100–300 nm was fabricated. It is demonstrated that a simple laser-diode technique with a single resonant light beam is sufficient to observe separately all of the atomic hyperfine transitions of the D ₂ line of Rb (780 nm) and also allows us to measure the relative transition probabilities of the hyperfine transitions. The onset of collisional self-broadening of the hyperfine transitions as the number density of atoms increases was studied. The detrimental role of the atoms with slow longitudinal velocity in the sub-Doppler response of the Rb ETC is demonstrated by studies in which the cell is tilted from normal incidence of the laser beam. It is also shown that using an ETC allows us to resolve in a moderate external magnetic field the Zeeman splitting of the hyperfine transitions of the ⁸⁷Rb D ₁ transition F _g=1F _e=1,2. Received: 19 February 2003 / Revised version: 4 April 2003 / Published online: 2 June 2003 RID="*" ID="*"Corresponding author. Fax: +374/32-31172, E-mail: david@ipr.sci.am     

Enhanced cyclability of triple-metal-doped LiMn2O4 spinel as the cathode material for rechargeable lithium batteries

To improve the cycle performance of spinel LiMn₂O₄ as the cathode of 4-V-class lithium secondary batteries, spinel phases LiM _x Mn_2 − x O₄ (M=Li, Fe, Co; x = 0, 0.05, 0.1, 0.15) and LiFe_0.05M _y Mn_{1.95 − y} O₄ (M=Li, Al, Ni, Co; y = 0.05, 0.1) were successfully prepared using the sol–gel method. The spinel materials were characterized by powder X-ray diffraction (XRD), elemental analysis, and scanning electron microscopy. All the samples exhibited a pure cubic spinel structure without any impurities in the XRD patterns. Electrochemical studies were carried out using the Li|LiM _x Mn_2 − x O₄ (M=Li, Fe, Co; x = 0, 0.05, 0.1, 0.15) and LiFe_0.05M _y Mn_{1.95 − y} O₄ (M=Li, Al, Ni, Co; y = 0.05, 0.1) cells. These cathodes were more tolerant to repeated lithium extraction and insertion than a standard LiMn₂O₄ spinel electrode in spite of a small reduction in the initial capacity. The improvement in cycling performance is attributed to the stabilization in the spinel structure by the doped metal cations.     

Estimation of the deformation-potential constant for <Emphasis Type="Italic">p</Emphasis>-type isotropic polycrystalline silicon through the deformation potential of a <Emphasis Type="Italic">p</Emphasis>-type silicon single crystal

A method of calculating the effective deformation-potential constant E ₁ for holes and longitudinal acoustic phonons in isotropic polycrystalline silicon is suggested. The deformation-potential constant E ₁ is estimated through the deformation potentials a, b, and d of the silicon single crystal. The procedure of averaging of the squared modulus of the hole and acoustic phonon interaction Hamiltonian written in the plane wave basis over the polycrystal ensemble provides the basis for calculation of the constant E ₁ . It is demonstrated that for T = 200–600 K, hole concentration p = (5.0–10.0)∙10¹⁹ cm^–3, and crystallite size d = 300–3000 ?, the deformationpotential constant E ₁ is independent of the hole concentration p, temperature T, and crystallite size d.     

Development of Flow Injection Spectrofluorimetric Detection System for the Determination of Homocysteine

In this work, a new simple and sensitive flow injection method is developed for the determination of homocysteine with spectrofluorimetric detection technique. This method is based on the oxidation of homocysteine with Tl (III) in acidic media, producing fluorescence reagent, TlCl₃^2- (λ_ex = 237 nm, λ_em = 419 nm). The effects of chemical parameters (including pH of the solutions, the buffer, Tl (III) and potassium chloride concentrations), instrumental parameters (such as flow rate of the solutions, reaction coil length, and sample loop volume) and temperature on the fluorescence intensity as an analytical signal are studied and optimized. In the optimum conditions of the above variables, homocysteine can be determined in the range 4.0 × 10^-7–40.0 × 10^-6 M with the LDR from 4.0 × 10^-7 to 25.0 × 10^-6 M. The detection limit (with S/N = 3) is 6.0 × 10^-8 M of homocysteine and precision for the injection of 5.0, 10.0 and 15.0 μM of homocysteine are 0.8%, 1.5% and 2.5% (n = 10) respectively. The rate of analysis is 90 samples per hour. The influence of potential interfering substances, including amino acids and carbohydrates is also studied. The proposed method has been successfully used for the determination of homocysteine in the real sample (blood serum and tap water) matrix.     

The electric quadrupole interaction of 111Cd in ZrZn2 and Zn in the samples prepared at 8 GPa

The perturbed angular correlation (PAC) measurements with the ¹¹¹In-¹¹¹Cd nuclear probe embedded into the lattice of the cubic (C15) Laves compound ZrZn₂ showed that ¹¹¹Cd nuclei experienced an axially symmetric electric quadrupole interaction with a frequency ν _Q  = 132.4 MHz at room temperature. The samples were synthesized and doped with the probe at a pressure 8 GPa. The temperature dependence of ν _Q was shown to be linear: ν _Q (T) = 147(1 − 0.033 T) MHz. Since the value of ν _Q is very close to that known for ¹¹¹Cd in the lattice of Zn, we have checked if it could be assigned to residual Zn metal in the sample. For the Zn sample melted and doped with ¹¹¹In at 8 GPa we have obtained ν _Q  = 117.3 MHz at 300 K and 127 MHz at 80 K – both values considerably lower than that for ¹¹¹In doped Zn samples prepared at an ambient pressure. These data, and the fact that ν _Q (T) in Zn is known to follow the T ^3/2 law, allow to attribute the ν _Q value quoted above to ¹¹¹Cd nuclei at the substitutional sites with tetrahedral symmetry in the Zn sublattice of ZrZn₂.     

Epitaxial combination of NdBa2Cu3O7−δ /SrTiO3: growth characteristics, structure, and parameters

We have studied the growth characteristics, structure, and parameters of the epitaxial heterostructures (001)NdBa₂Cu₃O_7−δ /(100)SrTiO₃/(001)NdBa₂Cu₃O_7−δ grown by laser ablation on a (100)LaAlO₃ substrate with a thin (∼2 nm) YBa₂Cu₃O_7−δ intermediate layer. The use of an YBa₂Cu₃O_7−δ intermediate layer promotes layered growth of the (200 nm) NdBa₂Cu₃O_7−δ layer, whose free-surface roughness is 4–5 nm. The resistance of the NdBa₂Cu₃O_7−δ layers began to fall off abruptly at T=92 K, and at T≈87 K it vanished completely. The critical current density in the NdBa₂Cu₃O_7−δ layers at T=76 K exceeded 10⁶ cm² A/cm². The dielectric constant of the (400 nm) SrTiO₃ layer sandwiched between the NdBa₂Cu₃O_7−δ epitaxial layers grew by roughly threefold as the temperature was lowered in the interval 300–4.2 K. When a bias voltage of ±2.5V was applied to the NdBa₂Cu₃O_7−δ electrodes, the relative dielectric constant of the (400 nm) SrTiO₃ intermediate layer fell from 1150 to 400 (T=32 K, f=100 kHz). The conductivity of the SrTiO₃ intermediate layer in the direction perpendicular to the substrate plane increased with temperature and the electric field strength. Fiz. Tverd. Tela (St. Petersburg) 41, 395–403 (March 1999)