CaCu3Ti4O12陶瓷的微观结构及直流导电特性

采用传统固相反应法制备了CaCu₃Ti₄O₁₂陶瓷.XRD证实其CaCu₃Ti₄O₁₂相；SEM观察到明显的晶粒晶界结构，晶界区亦由小晶粒构成；结合EDS结果，判定晶界区小晶粒为CuO.在较宽的温度范围内，CaCu₃Ti₄O₁₂陶瓷的介电常数保持在10⁵左右；当频率为10³ Hz温度小于150 K时，介电常数迅速下降.在173—373 K温度范围内，通过其I-V特性，得到CaCu₃Ti₄O₁₂陶瓷直流电导随温度的变化：直流电导与温度的关系可分为三部分，对应的活化能分别为0.681 eV，0.155 eV和0.009 eV，这与CuO陶瓷直流电导活化能一致.可以认为晶界区的CuO小晶粒在CaCu₃Ti₄O₁₂陶瓷的直流电导中占主导，这为解释CaCu₃Ti₄O₁₂陶瓷反常的介电性能提供了新的思路. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 微观结构 直流电导 介电特性     

邻苯二甲酸二甲酯系材料中α-弛豫的降温介电谱测量与分析

对邻苯二甲酸二甲酯(dimethyl phthalate)、邻苯二甲酸二乙酯(diethyl phthalate)、邻苯二甲酸二丁酯(dibutyl phthalate)和邻苯二甲酸二异辛酯 (dioctyl phthalate)系列材料中, α-弛豫的降温介电谱进行了测量, 得出了相应材料α-弛豫的平均弛豫时间τ_α^a 随温度T的变化关系. 通过τ_α^a 的实验结果与经验的Vogel-Fulcher-Tammann)定律τ_α^a = τ_α⁰ exp (A/(T-T₀))的拟合, 获得了上述系列材料的τ_α⁰, A和T₀. 分析发现, 随邻苯二甲酸二甲酯系列分子侧链中碳原子数目n的变化, 材料的τ_α⁰, A, T₀ 和T_g 表现出一定的规律性, 具体为随n的增加, 即分子内部自由度的增多, A和T_g 都表现出近乎相同的先减后再增的趋势, 而1/τ_α⁰ 和T₀ 则表现出基本相同的先快速减小, 然后保持基本上不变的趋势. 关键词： 玻璃化转变 介电谱 α-弛豫')" href="#">α-弛豫 邻苯二甲酸二甲酯系列材料     

由BaTiO3晶体结构相变时的介电特性研究其电场作用下的偶极子偏转路径

在不同频率和偏置电场下测量了BaTiO₃晶体从三方相到正交相再到四方相相变过程中的介电温谱.基于BaTiO₃晶体在电场作用下的偶极子偏转假设和介电特性实验结果，提出BaTiO₃各结构相在电场作用下的偶极子偏转路径可以由其相邻相的介电常数随温度的变化特性表现出来.推断出各结构相的偶极子偏转路径，以及偏置电场对偶极子偏转路径的影响. 关键词： 3晶体')" href="#">BaTiO₃晶体 介电特性 结构相变 偶极子偏转路径     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

ZnO压敏陶瓷介电损耗的温度谱研究

利用Novocontrol宽频介电谱仪在-100—20 ℃温度范围内测量了ZnO-Bi₂O₃系压敏陶瓷的介电频谱，其频率范围为10^-2—10⁶ Hz. 研究表明： ZnO压敏陶瓷特征损耗峰的活化能分别为0.26和0.36 eV，结合实验条件、理论计算结果及其他现象的分析排除了特征损耗峰源于阴极电子注入、夹层极化和偶极子转向极化的可能.热刺激电流（TSC）谱共出现三个峰，其中高温峰对应于TSC实验加压过程引入的热离子极化，而中温峰和低温峰对应于介电损耗峰. 在分析的基础上，提出了ZnO压敏陶瓷的特征损耗峰起源于耗尽层内本征缺陷的电子弛豫过程. 关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热刺激电流     

两种不同(Ba,Sr)TiO3薄膜介电-温度特性的研究

研究并比较了两种不同(Ba_0.5,Sr_0.5)TiO₃(BSTO)薄膜介电-温度特性.采用脉冲激光沉积技术在Pt/Ti/SiO₂/Si(100)衬底上制备BSTO薄膜，发现制备条件的不同，可以得到介电性质完全不同的BSTO薄膜.在550℃和氮气氛下制备的BSTO薄膜在常温下具有很高的介电常数，在10kHz下，超过2500，并在200K温度以上介电常数基本不变.它的一些电学性质不同于在正常条件(650℃和氧气氛下)制得的BSTO薄膜，而类似于目前广泛报道的巨介电常数材料如CaCu_３Ti_４O₁₂.两种薄膜介电性质测试结果表明: 氧气氛下制备的BSTO薄膜呈现铁电-顺电相变，符合居里-外斯定律；低温氮气氛下制备的BSTO薄膜，介电弛豫时间和温度的关系符合德拜模型，是热激发弛豫.文中给出了产生这种介电特性的初步解释. 关键词： 薄膜 脉冲激光沉积 介电弛豫     

La诱导(Pb(1-3x/2)Lax)(Zr0.5Sn0.3Ti0.2)O3反铁电介电弛豫研究

采用标准电子陶瓷工艺制备了(Pb_(1-3x/2)La_x)(Zr_0.5Sn_0.3Ti_0.2)O₃(PLZST,0.00≤x≤0.18)反铁电陶瓷,利用X射线衍射、不同频率下弱场介电温谱、强场下的极化强度-电场(P-E)测试研究了材料相结构和电学性能.实验结果发现,随La含量x增大,室温下材料由铁电三方相(关键词： 反铁电陶瓷 介电频率色散 相变弥散 介电弛豫     

巨介电常数氧化物CaCu3Ti4O12的介电和阻抗特性

采用固相烧结法合成了单相巨介电常数氧化物CaCu₃Ti₄O₁₂（CCTO）.用阻抗分析仪分析了10—420 K温度范围内的介电频谱和阻抗谱特性,并结合ZVIEW软件进行了模拟.结果表明：温度高于室温时,频谱出现两个明显的弛豫台阶,低频弛豫介电常数随温度升高而显著增大,表现出热离子极化特点;温度低于室温时,频谱表现出类德拜弛豫,且高、低平台介电常数值基本不随温度变化,表现出界面极化特点和较好的温度稳定性.频谱中依次出现的介电弛豫对应于阻抗谱中 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电频谱 阻抗谱 Cole-Cole半圆弧     

静水压下锆锡钛酸铅铁电陶瓷相变和介电性能研究

研究了铌掺杂锆锡钛酸铅铁电陶瓷Pb_0.99Nb_0.02[(Zr_0.90Sn_0.10)_0.96Ti_0.04]_0.98O₃(PZST 90/10-4-2Nb)在静水压(0-300 MPa)下的电荷释放量和介电性能. 对压力诱导的低温铁电三方(F_R(LT))→反铁电正交(A_O)相变进行了研究. PZST 90/10-4-2Nb铁电陶瓷分为未极化、极化和压力去极化三种. 极化PZST 90/10-4-2Nb陶瓷F_R(LT)→A_O相变过程中,电荷释放量为29.3 μC/cm²,相变压力为140 MPa. 介电性能表明:极化PZST 90/10-4-2Nb陶瓷相变压力为136 MPa,而未极化陶瓷相变压力为104 MPa,压力去极化陶瓷未表现出明显的相变特征. 关键词： 静水压 铁电陶瓷 相变 介电     

低温氮化硅薄膜的介电性能研究

研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在5—10⁶Hz频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ω^n－1₁的关系，ｎ₁在0.82—0.88之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ω^n-1₂的关系，n₂在0 关键词：     

Effect of impurity (Sb and Ag) incorporation on the a.c. conductivity and dielectric properties of a-Se70Te30 glassy alloy

The effect of additives (Sb and Ag) on a.c. conductivity and dielectric properties of Se₇₀Te₃₀ glassy alloy at temperature range 300-350 K and frequency range 1 kHz-5 MHz has been studied. Experimental results indicate that a.c. conductivity and dielectric parameters depend on temperature, frequency and the impurity incorporated in Se-Te glassy system. The a.c. conductivity in the aforesaid frequency range is found to obey the ω^s law. A strong dependence of a.c. conductivity and exponent s in the entire temperature and frequency range contradicts quantum-mechanical tunneling (QMT) model and can be interpreted in terms of the correlated barrier hopping (CBH) model. The temperature and frequency dependence of the dielectric parameters are also studied and it is found that the results agrees by the theory of hopping of charge carriers over potential barrier as suggested by Elliott in chalcogenide glasses. The change in the dielectric parameters with the opposite influence of the replacement of Te by Sb on the one hand, and by Ag, on the other hand is being correlated by the nature of covalent character of the studied composition and with the change in density of defect states.     

Fe掺杂CaCu3Ti4O12陶瓷的介电性能与弛豫特性研究

采用固相反应法制备了CaCu₃Ti_4-xFe_xO₁₂(0≤x≤0.2)陶瓷，通过X射线衍射、扫描电子显微镜、介电频谱和阻抗谱等手段研究了Fe对CaCu₃Ti₄O₁₂陶瓷的结构和介电性能的影响.研究发现：CaCu₃Ti_4-xFe_{x关键词： 巨介电常数 双阻挡层电容模型 界面极化}     

Dielectric and structural relaxation phenomena in Na0.5Bi0.5TiO3 single crystal

Abstract

Dielectric permittivity studies of Na_0.5Bi_0.5TiO₃ single crystals in a broad range of frequency up to 10 MHz and temperature 300—823 K are reported. In this temperature range dielectric dispersion below 1 MHz has been found. The obtained data were fitted to the Cole-Cole relation. The mean relaxation time τ is strongly temperature dependent (0.04 ? 2.6 × 10^?5 s). A remarkable hysteresis effect in the values of τ on cooling and heating took place. The Δε(T) dependence (the maximal value of Δε ～ 400) is similar to the global ε′(T) response at low frequency. An isothermal structural transformation in Na_0.5Bi_0.5TiO₃ was observed by X-ray measurements. The order of the time in which the transformation takes place (～300 minutes) corresponds to the time in which the strongest time evolution of electric permittivity and time changes of dielectric dispersion were detected.     

氧含量对BiFeOδ多晶陶瓷介电特性的影响

采用固相反应法制备了不同含氧量的BiFeO_δ多晶陶瓷样品，利用HP4294A阻抗分析仪测量了样品的介电特性随频率和氧含量的变化，用正电子湮没寿命谱学的方法研究了样品中因氧含量的变化所引起的结构缺陷. 实验结果表明：引入氧空位和氧填隙离子缺陷都会使介电常数减小，而介电损耗则随氧含量的增加而增加，二者的变化范围均在10%—35%之间；对不同氧含量的BiFeO_δ样品，介电常数和介电损耗随测量频率的增加而减小. 氧空位的引入使得局域电子密度变小，正电子平均寿命τ_m增加. 在氧含量δ=2.99时电子密度最大(n_e=3.90×10²³/cm³)，继续增加氧含量对正电子寿命与局域电子密度的影响不大. BiFeO_δ样品的介电常数和介电损耗随氧含量的变化可以在空间电荷限制电导的框架下来理解.     

Non-steady-state tunnelling recombination in insulating solids,controlled by defect diffusion and rotation

Abstract

The experimental data for KCl—Ag, KBr, NaCl—Ag and KCl—SO₄ crystals as well as Na₂O.3SiO₂—Tb³⁺ glass are summarized which demonstrate the delayed increase (decrease) of the intensity of the thermally stimulated tunnelling recombination of radiation defects after step-wise defrosting (frosting) of their mobility. Both theory and experiment presented here allow to distinguish the cases when the recombination kinetics is controlled by the rotation of an anisotropic defects or their diffusion respectively. It can be achieved studying the non-steady-state stages of kinetics. The effect of relative spatial defect distribution upon the kinetics under study is considered; it is argued that the {F, V _k } recombination in KBr occurs within spatially correlated pairs.     

Investigation on dependence of BiFeO3 dielectric property on oxygen content

The influence of oxygen content on the dielectric property of BiFeO3 ceramics is studied by experiment and firstprinciples calculation.The experimental result demonstrates that the dielectric constant of BiFeO3 is strongly dependent on introduced oxygen and oxygen vacancies.By comparison with BiFeO3,the introduced oxygen and oxygen vacancies can lead to a reduction in dielectric constant of BiFeO δ at a lower frequency.The first-principles calculation also shows a similar result when photon energy is in a range of 2.0-4.1 eV.A likely explanation is that this oxygen content dependence may be ascribed to the distortion of Fe-O octahedron structure due to oxygen vacancies or excess oxygen ions in the crystal structure of BiFeO3.     

Grain Boundary Diffusion and Linear and Non-Linear Segregation of Ag in Cu

Ag grain boundary (GB) diffusion was measured in the Cu-0.2at%Ag alloy in a wide temperature range from 473 to 970 K. The direct measurements of Ag GB diffusivity D ^alloy _gb under conditions of the Harrison C regime revealed that D ^alloy _gb is almost identical to D ^pure _gb determined earlier for Ag diffusion in high-purity Cu (Divinski, Lohmann, and Herzig, 2001). The penetration profiles determined in the Harrison B regime showed a complex, multi-stage shape. This diffusion behavior can be rationalized assuming that besides GBs significantly covered by segregated Ag atoms, some fraction of GBs remains almost free from Ag atoms in the studied temperature interval. The total amount of pure GBs drastically decreases with decreasing temperature. This hypothesis was proven by measurements of Ag GB diffusion in Cu near 5 bicrystals, which allowed us to analyze in detail the non-linear segregation of Ag in Cu GBs.     

添加Nb对CaCu3Ti4O12陶瓷介电性能的影响

采用固相反应法制备了CaCu₃Ti_4-xNb_xO₁₂(x=0，0.01，0.04，0.08，0.2)陶瓷，样品在x取值范围内形成了连续固溶体.在40Hz—110MHz频率范围对样品进行了介电频谱分析，实验结果表明，与纯CaCu₃Ti₄O₁₂不同，含Nb试样除了在频率大于10kHz范围内出现的德拜弛豫 关键词： 巨介电常数 德拜弛豫 阻挡层电容 等效电路     

Polar relaxation mode in PbZrO3 crystals

Abstract

In antiferroelectric lead zirconate crystal with one phase transition a nearly monodispersive dipolar relaxation has been found in the paraelectric phase and temperature range 20 K below T _c in the frequency region 20—3 ′ 10⁵ Hz. This relaxation has a dominating influence on the temperature dependence of dielectric susceptibility. Relaxation time obeys the Arrhenius law increasing up to 1.5 ′ 10^?2s (11 Hz) at T _c and then exhibiting a distinct jump.