首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 93 毫秒
1.
We investigate the impact of Ni insertion on the structural,optical,and magnetic properties of Ba0.8La0.2Fe12-xNixO19hexaferrites(Ni substituted La-BaM hexaferrites).Samples were prepared using the conventional co-precipitation method and sintered at 1000℃for 4 hours to assist the crystallization process.An analysis of the structure of the samples was carried out using an x-ray diffraction(XRD)spectrometer.The M-type hexagonal structure of all the samples was confirmed using XRD spectra.The lattice parameters a and c were found to be in the ranges of 5.8925±0.001 nm–5.8952±0.001 nm and 23.2123±0.001 nm–23.2219±0.001 nm,respectively.The M-type hexagonal nature of the prepared samples was also indicated by the presence of corresponding FT-IR bands and Raman modes in the FT-IR and Raman spectra,respectively.EDX results confirmed the successful synthesis of the samples according to the required stoichiometric ratio.A UV-vis spectrometer was used to record the absorption spectra of the prepared samples in the wavelength range of 200 nm–1100 nm.The optical energy bandgap of the samples was found to be in the range of 1.21 eV–3.39 eV.The M–H loops of the samples were measured at room temperature at an applied magnetic field range of 0 kOe–60 kOe.A high saturation magnetization of 99.92 emu/g was recorded in the sample with x=0 at a microwave operating frequency of 22.2 GHz.This high value of saturation magnetization is due to the substitution of La3+ions at the spin-up(12k,2a,and 2b)sites.The Ni substitution is proven to be a potential candidate for the tuning of the optical and magnetic parameters of M-type hexaferrites.Therefore,we suggest that the prepared samples are suitable for use in magneto-optic applications.  相似文献   

2.
Ag-doped manganite powder samples, La0.7Sr0.1AgxMnO3-δ(x = 0.00, 0.025, 0.05, 0.075, and 0.10) were synthesized using the sol–gel method. X-ray diffraction patterns indicated that the samples had two phases with the R3c perovskite being the dominant phase and Mn3O4 being the second phase. X-ray energy dispersive spectra indicated that the ratio of Ag to La was very close to that of the nominal composition in the samples. The specific saturation magnetizations at 300 K increased from 32.0 A·m2/kg when x = 0.00 to 46.8 A·m2/kg when x = 0.10. The Curie temperature, T C, of the samples increased from 310 K when x = 0.00 to 328 K when x = 0.10. Because the atomic concentration ratios of La, Sr, and Mn in the five samples were all the same and only the Ag concentration changed, the variations of the specific saturation magnetizations at 300 K and the Curie temperatures suggested that the Ag cations have been doped into the A sites of the perovskite phase in the samples.  相似文献   

3.
Mn0.5Zn0.5Fe2O4 Magnetic nanofibers were fabricated by calcining electrospun polymer/inorganic composite nanofibers and characterized by thermogravimetric and differential thermal analysis, x-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy and a vibrating sample magnetometer. The experimental results show that the pure spinel structure is basically formed when the composite nanofibers are calcined at 450°C for 2h. With the increasing calcination temperature, both the saturation magnetization and coercivity of nanofiber samples increase initially along with the growth of Mn0.5Zn0.5Fe2O4 nanocrystals contained in the nanofibers. However, when the calcination temperature reaches 550°C, the saturation magnetization of nanofibers starts to dramatically decrease owing to the formation of the α-Fe2O3 phase at this temperature. The prepared Mn0.5Zn0.5Fe2O4 nanofibers calcined at 500°C for 2h have diameters ranging from 100 to 200nm. Their saturation magnetization and coercivity are 12.37emu/g and 4.81kA/m at room temperature, respectively.  相似文献   

4.
吴云翼  王晓慧  李龙土 《中国物理 B》2010,19(3):37701-037701
La/Mn co-doped Bi4Ti3O12 ceramics,Bi3.25La0.75Ti3-xMnxO12(x=0.02,0.04,0.06,0.08),were prepared by the solid-state reaction method.The influence of manganese substitution for the titanium part in Bi 3.25 La 0.75 Ti 3 O 12 on the sintering behaviour,microstructure,Raman spectra and electrical properties was investigated.The experimental results show that the phase composition of all samples with and without manganese doping,sintered at 1000 ℃,consists of a single phase with a bismuth-layered structure belonging to the crystalline phase Bi4Ti3O12.There is no evidence of any impurity phase,but a small change in crystallographic orientation is observed.The Curie temperature of Bi3.25La0.75Ti3-xMnxO12 ceramics is steadily shifted to lower temperature with increasing Mn-doping content.Moreover,the remnant polarisation(Pr) of Bi3.25La0.75Ti2.92Mn0.08O12 samples increases with Mn-doping content,and the Bi3.25La0.75Ti2.92Mn0.08O12 sample exhibits the largest P r of 16.6 μC/cm 2.  相似文献   

5.
A serious problem in secondary ion mass spectrometry (SIMS) analysis is its "matrix effect" that hinders the quantification of a certain species in a sample and consequently, appropriate corrective measures are taken to calibrate the secondary ion currents into respective concentrations for accurate compositional analysis. Use of "calibration standards" is necessary for this purpose. Detection of molecular MCsn+ ions (M-element to be analyzed, n=1, 2, 3,....) under Cs+ ion bombardment is a possible mean to minimize such matrix effect, enabling one to quantify without the need of calibration standards. Our recent studies on MCsn+ molecular ions aim towards the understanding of their formation mechanisms, which are important to know their effects on SIMS quantification.In-depth quantitative analysis is a major strength of SIMS for which 'depth resolution' is of significant relevance. The optimal choice of the impact parameters during SIMS analyses can play an effective role in obtaining data with ultra-high depth resolution. SIMS is possible at depth resolution in the nm or even sub-nm range, with quantifiable data obtained from the top monolayer onwards into the material. With optimized experimental conditions, like extremely low beam current (down to ~10 nA), and low bombarding energy (below 1 keV), ultra-high depth resolution SIMS has enabled interfacial composition analysis of ultra-thin films, quantum wells, heterostructures, etc. and complex low-dimensional structures with high precision and repeatability.  相似文献   

6.
A new Digital Pulse Processing(DPP) module has been developed, based on a domino ring sampler version 4 chip(DRS4), with good time resolution for La Br3 detectors, and different digital timing analysis methods for processing the raw detector signals are reported. The module, composed of an eight channel DRS4 chip, was used as the readout electronics and acquisition system to process the output signals from XP20D0 photomultiplier tubes(PMTs). Two PMTs were coupled with La Br3 scintillators and placed on opposite sides of a radioactive positron22 Na source for 511 ke V γ-ray tests. By analyzing the raw data acquired by the module, the best coincidence timing resolution is about 194.7 ps(FWHM), obtained by the digital constant fraction discrimination(d CFD) method,which is better than other digital methods and analysis methods based on conventional analog systems which have been tested. The results indicate that it is a promising approach to better localize the positron annihilation in positron emission tomography(PET) with time of flight(TOF), as well as for scintillation timing measurement,such as in TOF-?E and TOF-E systems for particle identification, with picosecond accuracy timing measurement.Furthermore, this module is more simple and convenient than other systems.  相似文献   

7.
A novel optical excitation and detection apparatus was used to investigate the characteristics of silicon micro-resonators, which was activated into vibration by a laser beam irradiation. The beam diameter of the excitation light was less than 10 μm. The vibration amplitude of the resonator was detected by the interferometer with high resolution of 0.1 nm and measurement repeatability of less than 3 nm. The resonant frequency of the micro-resonator was obtained to be 8.75 kHz with full-width at half-maximum (FWHM) of 0.18 kHz. It is shown that the method is useful and reliable for measuring micro-displacement and micro-vibration of minute objects with nanometer accuracy.  相似文献   

8.
A novel optical excitation and detection apparatus was used to investigate the characteristics of silicon micro-resonators, which was activated into vibration by a laser beam irradiation. The beam diameter of the excitation light was less than 10 μm. The vibration amplitude of the resonator was detected by the interferometer with high resolution of 0.1 nm and measurement repeatability of less than 3 nm. The resonant frequency of the micro-resonator was obtained to be 8.75 kHz with full-width at half-maximum (FWHM) of 0.18 kHz. It is shown that the method is useful and reliable for measuring micro-displacement and micro-vibration of minute objects with nanometer accuracy.  相似文献   

9.
A novel read-only memory (ROM) disk with an AgOx mask layer was proposed and studied in this letter.The AgOx films sputtered on the premastered substrates, with pits depth of 50 nm and pits length of 380 nm, were studied by an atomic force microscopy. The transmittances of these AgOx films were also measured by a spectrophotometer. Disk measurement was carried out by a dynamic setup with a laser wavelength of 632.8 nm and a lens numerical aperture (NA) of 0.40. The readout resolution limit of this setup was λ/(4NA) (400 nm). Results showed that the super-resolution readout happened only when the oxygen flow ratios were at suitable values for these disks. The best super-resolution performance was achieved at the oxygen flow ratio of 0.5 with the smoothest film surface. The super-resolution readout mechanism of these ROM disks was analyzed as well.  相似文献   

10.
STUDY OF THE Al/GRAPHITE INTERFACE   总被引:1,自引:0,他引:1       下载免费PDF全文
Thin Al films with a thickness of 20-30nm were prepared by ultra-high vacuum deposition of Al onto a graphite surface parallel to a (0001) basal plane. The samples were annealed up to 1070K. X-ray photoelectron spectroscopy analysis has shown that for temperatures just higher than 770K, a little carbide occurs in the Al film and only an Al-C phase is present at the Al/graphite interface. After annealing at 970K, the Al4C3 phase can be observed, and the binding energy of the Al2p electrons increases continuously from 72.7 to 74.2eV with increasing temperature up to 1070K. Auger electron spectroscopy depth profiles are measured to investigate the phases existing in the Al film as well as at the Al/graphite interface. It is found that the Al4C3 phase at the interface is the final product of a series of Al carbides from the interfacial reaction between Al and graphite.  相似文献   

11.
F离子弹性反冲法分析固体中H的深度分布   总被引:1,自引:0,他引:1       下载免费PDF全文
本文报道7—8MeVl4+离子弹性反冲法(ERD)分析固体中H的深度分布。实验和理论分析表明,近表面处的深度分辨率为200—300?。探讨了散射几何条件和入射能量等的最佳化问题。比较了同一样品用F离子ERD法与6.4MeV1H(19F,αγ)16O核反应法(NRA)的测试结果。表明F离子ERD法是快速(5—10min)、低辐照(5—10μC)、深度分辨和灵敏度较好的分析固体中H的深度分布的一种方法。 关键词:  相似文献   

12.
采用辉光放电光谱仪进行物质表面深度分析时,样品溅射深度是重要的分析信息.本文设计了一种新型Grimm辉光放电光源,此光源与激光位移测距传感器构成的测昔系统可对样品溅射深度进行实时测量,并保证了良好的辉光溅射效果和分辨多层结构及界面的能力.采用激光三角测量技术,在辉光光谱分析的同时对溅射深度进行实时测量,能够有效地解决传统深度分析方法中步骤繁琐以及对深度估算不准确等问题.本光源采用光纤将辉光光谱信号从光源传至多道分光光电检测系统,在结构上首次实现了元素光谱信号和溅射深度信号的实时采集及基于时间的同步分析,对标准样品得到了理想的实时溅射深度测量曲线.本文详细介绍了此新型辉光放电光源的设计思路和工作原理.本辉光放电光源具有良好的深度分辨率,在30 mA,900 V,20 min的溅射条件下,对铁基和铜基样品的溅射速率分别约为10和55 nm·s-1,文中给出了样品的溅射坑表面形貌图和溅射坑显微照片.对中低合金钢标准样品进行了分析精密度实验,分析精度良好,其中C,Cu,Al,Ni,Mo,Mn,V元素相对标准偏差(RSD)均小于1.7%.Cr和Si元素RSD小于2.6%,给出了实测数据.  相似文献   

13.
A C60+ primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C60+ depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C60+ SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C60+ SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs+ SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical features were also observed on silicon substrates after high primary ion dose C60+ bombardment.  相似文献   

14.
The depth resolutions of evaporated silver layers on polished polycrystalline copper substrates are studied at various temperatures during argon ion sputtemg with AES. A detailed analysis of the profile shape at the interface reveals the nature of contributions to the terms governing interface resolution. The profiles are all accurately described by an error function leading edge followed by an exponential trailing edge. The characteristic of the trailing edge is governed by the development of roughness which depends on the depth, z, sputtered as z0.875. The roughness is reduced at elevated temperatures by the action of surface diffusion such that the maximum reduction occurs at the highest temperature and the lowest sputtering rate. The characteristic of the leading edge is composed of three terms added in quadrature, (i) defect-enhanced diffusion of copper into the silver film, (ii) roughness as above, and (iii) a constant term due to film nucleation. In the present samples the increased interdiffusion at elevated temperatures and low sputtering rates largely offsets the improvements in topography so that, overall, the depth resolution appears to be a very weak function of temperature. However, in other systems where interdiffusion is small, the resolution could be greatly enhanced.  相似文献   

15.
Auger Electron Spectroscopy (AES) is an analytical technique sensitive to the surface of materials and providing elemental and chemical composition of conductive samples. The excellent spatial resolution and its quantification possibilities, even for light elements, make AES a commonly used technique to investigate surface and interfaces.TiN-like materials have a wide range of applications depending on their stoichiometry, but their composition is still complex (or at least not straightforward) to determine because of a strong overlapping of the Ti LMM with the N KLL Auger transitions. This quantification problem can be circumvented using computerised calculations as target factor analysis (TFA) to estimate the different nitrogen and titanium contributions in this peaks overlap. However, a more simple method, based on the study of Ti LMM and Ti LMV area ratio of pure TiN and TiC reference samples, is described in this paper and can be used to obtain the atomic composition of any titanium nitride based compound, whatever the complexity of the material. This method is an alternative to easily quantify TiN-like compounds by AES.As an illustration, a Ti(CxN1−x) based multilayer deposited on a hardmetal substrate was investigated. This quantification method was successfully used to evidence three different layers and the diffusion phenomenon at the interfaces between the layers. This study was completed with a quantitative SIMS depth profile that the high sensitivity and depth resolution allowed to measure the small variations of composition lower than the uncertainty of AES.  相似文献   

16.
This work reports the construction of a single-sided magnet generating a sensitive volume with adjustable curvature. It is useful to profile cylindrical samples with high depth resolution. The sensor geometry is based on the Profile NMR-MOUSE, which generates a parabolic field profile with a quadratic coefficient that decreases with the distance from the magnet surface. Such field profiles approximate cylinder walls within limited angular range with negligible deviation. Then, by varying the working depth, shells of different diameter in the sample can be matched. Simulation and experiments conducted on phantoms confirm that a depth resolution of about 35 μm can be obtained. The sensor was used to profile the structure of a cylindric air spring bellows with high resolution. Besides resolving the fiber layers used to reinforce the rubber matrix, the ingress of hexane was detected via T 2 changes of the material.  相似文献   

17.
In this study we report on the results of experiments devoted to the depth profile analysis of zinc-coated steel samples using the laser-induced breakdown spectroscopy (LIBS) technique. The dependence of zinc and iron emissions in three ablation atmospheres (air, argon, helium) was measured using the fundamental wavelength (1064 nm) of the Nd:YAG laser. The highest possible depth resolution was achieved by optimizing the experimental parameters, such as the delay time (which affects the tailing of the zinc emission signal), focusing conditions, energy delivered to the sample, and choice of buffer gases. Current research indicates that there is a constant need to optimize these parameters so that reliable depth-profiling analysis can be performed.  相似文献   

18.
Penetration depth and spatial resolution of Raman hyperspectral imaging system were studied for effective detection of benzoyl peroxide in flour. The determinations of parameters were achieved by using the single-band background-correct image of a benzoyl peroxide Raman characteristic band and a simple threshold method. The selected parameters were used to detect mixture samples with different concentrations. Percentage of detected benzoyl peroxide pixels was positively correlated to its concentration. The result shows that parameters selected in this study are effective for the detection of benzoyl peroxide additive in flour and can be used for quantitative analysis in the future.  相似文献   

19.
陆明  张强基 《物理学报》1989,38(11):1771-1777
对Ta2O5/Ta样品界面区的深度剖面曲线进行了研究。基于离子溅射引起影响层存在的考虑,提出一种解释该曲线的新模型。通过此模型能很好地拟合实验曲线,并反映了溅射过程中的离子混合效应、原子堆积效应及相应的特征参数。样品由阳极氧化法制得,其厚度为500埃。表面分析在PHI-590型扫描俄歇微探针上完成,所有测量均在室温下进行。研究表明:深度剖面曲线并不符合误差函数分布;影响层的厚度为30—50埃,它是进行深度剖面分析时,决定元素俄歇信号强度的第一位重要因素;深度剖面 关键词:  相似文献   

20.
Time of flight secondary ion mass spectrometry (ToF-SIMS) depth profiles of several inorganic layered samples using Cs+ and C60+ primary sputtering ions of different energies are compared to evaluate sputter yield and depth resolution. A gold/silicon model system is employed to study interfaces between metals and semiconductors, and multilayers of AlGaAs, Al, and InAs in GaAs are analyzed to explore the ability of C60+ to analyze semiconductor interfaces in GaAs. Roughness measurements are reported to differentiate between different factors affecting depth resolution. The best depth resolution from all samples analyzed is achieved using 1 keV Cs+. However, C60+ sputtering has advantages for analyzing conductor/insulator interfaces because of its high sputter yield, and for analyzing deeper heterolayers in GaAs due to lower sputter-induced roughness.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号