用于10Gb/s传输系统的电吸收调制器与分布反馈激光器集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distribute feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的集成器件表现出了良好的性能：激射阈值为19 mA，出光功率接近7 mW，边模抑制比(side-mode suppression ratio, SMSR)大于40 dB，将该集成器件出射光耦合进普通单模光纤后进行测量，获得了16 dB的消光比，器件3 dB响应带宽达到了10 GHz以上.将该集成器件完全封装后成功进行了10 Gb/s非归零码(non-return zero, NRZ)的传输实验：在误码率为10^-10的传输条件下于普通单模光纤中传输了53.3 km，色散代价小于1.5 dB，动态消光比大于8 dB，且眼图清晰张开. 关键词： 超低压 选择区域生长 集成光电子器件 10 Gb/s     

渐变掩蔽图形超低压选择区域生长法制备高质量InGaAsP多量子阱材料

采用超低压(22 mbar)选择区域生长(Selective Area Growth, SAG)金属有机化学汽相沉积(Metal-organic Chemical Vapor Deposition, MOCVD)技术成功制备了高质量InGaAsP/InGaAsP多量子阱(Multiple Quantum Well, MQW)材料. 在较小的掩蔽宽度变化范围内(15—30μm)，得到了46nm的光荧光(Photoluminescence, PL)波长偏移量，PL半高宽(Full-Width-at-Half- 关键词： 超低压 选择区域生长 渐变掩蔽图形     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

1.3μm InGaAsP/InP双异质结发光管的特性研究

用液相外延技术生长的三层和四层InGaAsP/InP双异质结材料,制成了1.3μm InGaAsP/InP双异质结发光管。光功率输出(100mA)>1.0mW,最高2mW,尾纤输出功率(N.A.0.23,芯径60μ)>50μW。文中描述了器件的特性参数,还讨论了光功率的饱和特性和退化特性。     

无杂质空位扩散法造成InGaAsP/InP多量子阱结构带隙蓝移规律的研究

采用光荧光谱(PL)和光调制反射谱(PR)的方法,研究了由Si₃N₄、SiO₂电介质盖层引起的无杂质空位(IFVD)诱导的InGaAsP四元化合物半导体多量子阱(MQWs)结构的带隙蓝移。实验中Si₃N₄、SiO₂作为电介质盖层,用来产生空位,再经过快速热退火处理(RTA)。实验结果表明:多量子阱结构带隙蓝移和退火温度、复合盖层的组合有关。带隙蓝移随退火温度的升高而加大。InP、Si₃N₄复合盖层产生的带隙蓝移量大于InP、SiO₂复合盖层。而InGaAs、SiO₂复合盖层产生的带隙蓝移量则大于InGaAs、Si₃N₄复合盖层。同时,光调制反射谱的测试结果与光荧光测试的结果基本一致,因此,PR谱是用于测试带隙变化的另一种方法。     

纳米集成光路中的光源、光波导和光增强

使用近场光学显微术(scanning near-field optical microscopy, SNOM)研究了ZnO亚微米线端面出射性质，不同空间形貌Ⅱ-Ⅵ族半导体荧光器件光波导特性，二维光子晶体、准晶光子晶体对LED的出射增强作用以及表面等离激元(surface plasmon polariton, SPP)与半导体纳米荧光器件的相互作用，对纳米集成光路中的光源、光波导、光增强三个重要问题做了实验和理论上的分析.研究发现半导体微纳米线端面出射光束的质量与样品的直径有密切关系.通过合理地设计其直径和 关键词： 纳米集成光路 扫描近场光学显微术 光波导 光增强     

ZnO电子传输层对于反型结构聚合物太阳电池光浴效应的影响

采用金属氧化物电子传输层(ETL)的聚合物光伏器件在制备完成之初通常性能表现低下, J-V曲线呈异常“S”形. 当器件受白光持续照射后, 该不良状况会逐渐好转, 此过程称为光浴(light-soaking). 光浴现象普遍被认为是ETL界面问题所致. 从器件结构着手, 研究了ZnO 纳米颗粒ETL相邻的两个界面在光浴问题上的作用. 制备了功能层相同的(电极除外)正型、反型器件及复合ETL结构器件, 发现光浴现象仅出现于包含ZnO/ITO界面的反型器件中, 证明该界面是导致光浴现象的主要原因. 分析认为: ZnO颗粒表面O₂吸附形成的电子陷阱增加了ITO/ZnO势垒厚度, 使得光生电子无法逾越而成为空间电荷积累, 从而导致器件初始性能不佳. 器件经光照后, ETL内部受激而生的空穴电子对填补了ZnO缺陷, 提升了ETL的电荷选择性并减小了界面势垒厚度, 被束缚的光生电子得以隧穿至ITO电极, 反型器件性能最终得以改善.     

SiO2图形化蓝宝石衬底对GaN生长及LED发光性能的影响

为了提高氮化镓(GaN)基发光二极管(LEDs)的发光性能,采用等离子体增强化学气相沉积(PECVD)在蓝宝石衬底上沉积SiO_2薄膜,经过光刻和干法刻蚀技术制备了SiO_2图形化蓝宝石衬底(SiO_2 patterned sapphire substrate, SPSS),利用LED器件的外延生长和微纳加工技术获得了基于SPSS的GaN基LED器件。通过分析GaN外延层晶体质量、光提取效率和LED器件性能,重点研究了SPSS对GaN生长及LED发光性能的影响。实验及模拟仿真结果表明,与常规图形化蓝宝石衬底(Conventional patterned sapphire substrate, CPSS)相比,SPSS上生长的GaN外延层位错密度较低,晶体质量较高,SPSS-LED的光提取效率提高26%、光输出功率和亮度均提高约5%。     

集成双波导半导体光放大器光开关实现波长转换的理论研究

建立了基于集成双波导半导体光放大器的光开关(ITG-SOA-Switch)的理论分析模型.与半导体光放大器(SOA)的特性相比较表明，由于ITG-SOA-Switch合并了多种物理效应，故其静态增益饱和曲线在饱和功率点附近具有大幅度陡峭下降的独特性质.理论分析和10 Gbit/s波长转换模拟结果显示，恰当地选择输入抽运光的功率范围，ITG-SOA-Switch波长转换器输出转换光的消光比特性较之输入抽运光会有显著的改善. 关键词： 波长转换 半导体光放大器 集成双波导半导体光放大器 光开关     

有机磷光材料的固态阴极射线发光研究

采用有机磷光材料三-(2-苯基吡啶)-铱(Ir(PPY)₃)与无机材料SiO₂复合制成夹层结构器件，用交流电压驱动获得了Ir(PPY)₃主峰位于517nm的发光和主峰位于435nm的蓝色发光.通过分析器件的光谱特性，发现这两个发光峰都是源于SiO₂中加速电子直接碰撞激发有机层引起的固态阴极射线发光.继实现多种有机聚合物材料和有机小分子材料八羟基喹啉铝(Alq₃)的固体阴极射线发光之后，又证实了有机 关键词： 夹层结构器件 有机磷光材料 固态阴极射线发光     

Experimental study of NRZ format wavelength conversion using electroabsorption modulator

In this paper, NRZ format wavelength conversion using cross absorption modulation (XAM) in InGaAsP MQW electroabsorption modulator (EAM) is investigated experimentally in detail for the first time, to the best of our knowledge. The influence of two key operating parameters, input signal power and bias voltage of EAM, on wavelength conversion performance is studied. Experimental results indicate that there exists optimal bias voltage for fixed input signal power and that there exists also optimal input signal power for fixed bias voltage and the lowest power penalty of 0.9 dB is obtained by optimizing these two parameters. The physical explanations are given for these results based on operating characteristic of EAM device. Finally, the probe light wavelength dependence of wavelength conversion is studied for span of 1530–1560 nm.     

基于电吸收调制晶体(EAM)的超短光脉冲特性研究

数值模拟了两种形式的基于电吸收调制晶体(EAM)的超短光脉冲源(单EAM)和级联EAM形式)的输出脉冲宽度及消光比与外加反向偏压、射频信号幅度之间的变化关系.数值模拟结果表明,在重复率为10GHz情况下,对于单EAM形式,可以获得的最小脉宽大约为13ps,其消光比大于20dB,脉冲波型接近sech2孤子波型;对于级联EAM形式,我们得到了小于5ps的超短脉冲,消光比也较单EAM形式有较大的提高.因此,单EAM形式的超短脉冲源可以满足20Gb/s的OTDM系统需求,也同样适合于超长距离的光孤子通信系统;级联形式EAM可以满足40Gb/s的OTDM系统光源需求.     

High-Power Electroabsorption Modulator Using Intrastep Quantum Well

An electroabsorption modulator using the intrastep quantum well （IQW） active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency IOdB/V and low capacitance （〈 0.42 pF）, with which an ultra high frequency （〉 15 GHz） can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.     

Semiconductor waveguide directional couplers for coherent receivers

Optical waveguide 3-dB couplers integrated on semicondutors have been studied, designed and fabricated, using both bulk and diluted multi-quantum-well InGaAsP/InP-based materials, grown by MOCVD. The device structure is based on the two-mode interference (TMI) principle and is fully compatible for integration with the optoelectronic and electronic components of a coherent receiver. Bulk material couplers provide an output balanced within 0.05 dB per nanometer and an excess loss of 1.4 dB, compared to a straight guide, while coupling loss to a tapered-lensed single mode fibre is 4 dB.Improved coupling efficiency to single-mode fibres is achieved by use of moderately diluted multi-quantum-well waveguides, which include InGaAsP wells and InP barriers: coupling loss to a tapered-lensed single-mode fibre as low as 0.5 dB and excess loss of 1.8 dB are featured. Couplers fabricated with this waveguide structure have a balance sensitivity of 0.03 to 0.04 dB per nanometer.A moderately diluted multi-quantum-well 3-dB coupler has been permanently pigtailed and butt-coupled to a dual balanced PIN photoreceiver. This hybrid assembly was tested in a coherent transmission system at 155 and 622 Mbits^-1 showing sensitivities, for 10^-9 BER, of about-38.0 dBm and-28.8 dBm, respectively.     

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well （MQW） complex-coupled distributed feedback （DFB） laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W·A^-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.     

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.     

Operation performance characteristics of vertical-cavity surface-emitting lasers (VCSELs) under high thermal neutron irradiated fields

To operate and read out even the innermost detectors under any particular conditions, electronics and optical components must be developed accordingly. For semiconductor lasers, on which we will concentrate here, it has been found that an inner temperature increase has a direct impact on the light power emitted by the device. It was found that the effects of radiation on the behavior of semiconductor lasers are convolved with those of temperature. An optimized coupling to the cooling of the laser device reduces the thermal effects in the material. Therefore, a test stand to qualify the effect of heat in the device and the adoption of the heat sink is realized. In this paper, we create a model describing the degradation of the light power and voltage characteristic of a semiconductor-laser undergoing irradiation where the high temperature effects are taken into account. This VCSEL-device model can be used to predict the behavior and operation-performance characteristics (rise time, 3 dB bandwidth, light power, resonance frequency, and transmission bit rate) of a laser being irradiated with different neutron doses. We check the robustness of the model against the high fluence (in excess of 10¹⁵ neutrons/cm²). We take into account the study of different semiconductor- and polymeric material-based VCSEL devices such as aluminum gallium arsenide (AlGaAs), indium gallium arsenide phosphors (InGaAsP), and polymeric polymethylmethacrylate (PMMA) under the same operating conditions.     

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

High performance integrated optical modulators are highly desired for future optical interconnects. The ultra‐high bandwidth and broadband operation potentially offered by graphene based electro‐absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro‐absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 μm‐length hybrid graphene‐Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best‐in‐class Si (Ge) modulators for future chip‐level optical interconnects.     

Hybrid silicon evanescent approach to optical interconnects

We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach–Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III–V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature (T ₀) of 51°C, an above threshold characteristic temperature (T ₁) of 100°C, and a thermal impedance (Z _T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry–Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III–V epitaxial transfer to silicon in a timely and dimension-independent fashion.