载能团簇离子的非线性辐照损伤

由于团簇离子在能量损失、二次离子发射和辐照损伤上的非线性效应，所以团簇离子与物质的相互作用倍受关注。对团簇作用的非线性效应研究不仅对于了解团簇离子与物质相互作用的机制具有十分重要的理论意义，而且载能团簇离子还有可能成为材料表面改性与分析、新功能材料的合成与研究的一种有效的新手段。因此，团簇离子与物质的相互作用成为当今国际上的研究热点之一。主要评述了载能团簇离子在物质中的非线性辐照损伤，介绍了典型的研究方法和实验结果。 Due to energetic cluster produces simultaneous impacts of several atoms and deposits extremely high energy density in a very small area, the cluster impingement on solids has produced non-linear radiation damages not presented in the collisions of individual atoms with those solids. The radiation damages are usually investigated by channeling Rutherford backscattering, Scanning Tunneling Microscope （STM）, Transmission Electronic c Microscope（TEM） and computer simulation. The typical methods and results on the non-linear radiation damages induced by clusters are reviewed in this paper.     

载能团簇离子在物质中的能量损失

实验表明，团簇离子在物质中的能量损失并不等于各成分单独作用的总和，而是具有非线性效应．这种非线性效应与团簇离子的能量、团簇的种类和大小、团簇成分之间的空间关联程度以及作用物质的结构有关．对团簇作用的非线性效应研究对于了解团簇与物质相互作用的机制具有非常重要的理论意义．MeV能区的团簇离子在物质中的非线性电子能损和核能损方面的直接实验数据还相当缺乏，其理论模型也更待建立．评述了载能团簇离子在物质中的能量损失及测量方法．Fast ions deposit energy in matter through electronic and nuclear collision processes. The relaxation of the deposited energy induces emission of photons, electrons, ions, and neutral species from the target. Comparing with single incident ion, cluster induces many new phenomena: such as non-linear energy loss, non-linear emission of secondary ions, production of giant tracks and craters in various irradiated materials. These new phenomena induced by clusters are attributed to the vicinage effect ......     

加速器束流脉冲化及氢二次离子发射研究

详细介绍了快速高压晶体管开关在加速器束流脉冲化和用于二次离子测量的加速器飞行时间谱仪上的应用. 利用飞行时间法研究了碳纳米管在不同能量的Si和Si2团簇离子轰击下氢二次离子的发射. 实验结果表明， 在每个原子质量单位的速度为2.5×108 cm/s以上， Si和Si2离子引起的氢二次离子的发射主要受电子阻止过程控制； 在每个原子质量单位的速度为2.5×108 cm/s以下和Si2团簇离子轰击的情况下， 氢二次离子的发射产额明显增加， 团簇离子在靶表面的核能损增强效应起主要作用. The application of Fast High Voltage Transistor Switches (HTS) in pulsed ion beam and the time of flight(TOF ) setup is described. Secondary ion emissions from carbon nanotubes under bombardments of MeV Si and Si2 clusters are measured by using TOF. The measurements indicate that the yield of the secondary ion emissions of hydrogen increases with increasing energy of Si and it is attributed to the electronic processes. The yield of the secondary ions of hydrogen decreases with increasing energy of Si2 clusters and the enhancement of nuclear energy loss of cluster constituents at the surface of sample plays a more significant role in the secondary ion emission of hydrogen at the low energies.     

High-intensity femtosecond laser absorption by rare-gas clusters

The energy absorption efficiency of high-intensity (～10^{16}W/cm^2) femtosecond laser pulses in a dense jet of large rare-gas clusters has been measured. Experimental results show that the energy absorption efficiency is strongly dependent on the cluster size and can be higher than 90%. The measurement of the ion energy indicates that the average ion energies of argon and xenon can be as high as 90 and 100keV, respectively. The dependence of the average energy of the ions on the cluster size is also measured. At comparatively low gas backing pressure, the average ion energies of argon and xenon increase with increasing gas backing pressure. The average ion energy of argon becomes saturated gradually with further increase of the gas backing pressure. For xenon, the average ion energy drops a little after the gas backing pressure exceeds 9 bar (3.2×10^5 atoms/cluster). The result showing the existence of a maximum average ion energy has been interpreted within the framework of the microplasma sphere model.     

Dynamics simulation on interaction of intense laser pulses with atomic clusters

Under classical particle dynamics, the interaction process between intense femtosecond laser pulses and icosahedral noble-gas atomic clusters was studied. Our calculated results show that ionization proceeds mainly through tunnel ionization in the combined field from ions, electrons and laser, rather than the electron-impact ionization. With increasing cluster size, the average and maximum kinetic energy of the product ion increases. According to our calculation, the expansion process of the clusters after laser irradiation is dominated by Coulomb explosion and the expansion scale increases with increasing cluster size. The dependence of average kinetic energy and average charge state of the product ions on laser wavelength is also presented and discussed. The dependence of average kinetic energy on the number of atoms inside the cluster was studied and compared with the experimental data. Our results agree with the experimental results reasonably well.     

Cluster Evolution in undercooled Melt and Solidification of Undercooled Ge—based Alloy Melts Induced by Extrinsic Clusters

The structure or short-range order of clusters in undercooled metallic melts is influenced,to some extent,by the interfacial free energy between the cluster and the melt.Analyses of the effects of interfacial energy on the cluster structure based on the Gibbs equation show a possibility that atoms in the clusters tend to be packed more loosely with the increasing cluster size(or the undercooling),Nucleation may occur,following these analyses,when clusters reach a definite size and atoms in the clusters relax to some extent to form the crystal structure.Indirect support to this viewpoint is provided by the present results of cluster-induced nucleation experiments on undercooled Ge3.7Ni26.3 alloy melts.     

Comparison of Secondary Ion Emissions from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

The emission yields of H, H2, H3 and heavy ions from carbon nanotubes under bombardments of Si and Si2 clusters in an energy range of 0.3-3 MeV per atom are measured by using the time-of-flight technique (TOF). The emission yields of the secondary ions increase with increasing energy of Si and the electronic stopping processes play an important role. The enhanced emission yields of secondary ions induced by Si2 clusters at the low energies are clearly seen and attributed to the vicinage effect of the nuclear collision processes of cluster constituents and the secondary ion emissions are still dominated by electronic stopping processes at high energies.     

团簇离子在固体中能损的非线性效应

研究了每核子能量为 2 6 0— 4 5 0keV的H₊2,H₊3,H₊4 H₊5和H₊7团簇离子在金膜中的能损 .发现团簇离子中平均每个质子的能损大于相同速度的单质子能损 ,即能损比大于 1,且随团簇离子的大小和速度的增加而增加. The energy losses of cluster ions H₊2,H₊3,H₊4 H₊5 and H₊7with energy of 260-450 keV/p in solid films have been measured. It has been found that the energy loss per proton in clusters is larger than that of single proton with the same velocity as clusters, that is, the energy ratio is larger than 1. Energy ratio increases with increasing the cluster size and velocity.     

Deposition mechanism of nano-structured single-layered C36 film on a diamond （100） crystal plane

The Brenner-LJ potential is adopted to describe the interaction between C36 clusters and diamond surface, and the deposition mechanism of multi-C36 clusters on the diamond surface is also studied by using the method of molecular dynamics simulation. The simulation results show that the competition effects of two interactions, i.e. the interaction between cluster and cluster and the interaction between cluster and crystal plane, are studied, and then the influence of these competition effects on C36 cluster deposition is analysed. The finding is that when an incident energy is appropriately chosen, C36 clusters can be chemically adsorbed and deposited steadily on the diamond surface in the form of single-layer, and in the deposition process the multi-C36 clusters present a phenomenon of energy transmission. The experimental result shows that at a temperature of 300K, in order to deposit C36 clusters into a steady nanostructured single-layered film, the optimal incident energy is between 10 and 18 eV, if the incident energy is larger than 18 eV, the C36 clusters will be deposited into an island nano-structured film.     

Cluster size and substrate temperature affecting thin film formation during copper cluster deposition on a Si （001） surface

The soft deposition of Cu clusters on a Si(001) surface was studied by molecular dynamics simulations.The embedded atom method,the Stillinger-Weber and the Lennar-Jones potentials were used to describe the interactions between the cluster atoms,between the substrate atoms,and between the cluster and the substrate atoms,respectively.The Cu13,Cu55,and Cu147 clusters were investigated at different substrate temperatures.We found that the substrate temperature had a significant effect on the Cu147 cluster.For smaller Cu13 and Cu55 clusters,the substrate temperature in the range of study appeared to have little effect on the mean center-of-mass height.The clusters showed better degrees of epitaxy at 800 K.With the same substrate temperature,the Cu55 cluster demonstrated the highest degree of epitaxy,followed by Cu147 and then Cu13 clusters.In addition,the Cu55 cluster showed the lowest mean center-of-mass height.These results suggested that the Cu55 cluster is a better choice for the thin-film formation among the clusters considered.Our studies may provide insight into the formation of desired Cu thin films on a Si substrate.     

Probing free xenon clusters from within

Inner-shell and valence-shell photoionization of van-der-Waals Xe clusters have been measured using both angle-resolved photoelectron spectroscopy and velocity map ion imaging technique. Both techniques have been used to probe the electronic properties and the fragmentation dynamics of clusters as a function of photon energy and cluster size. In particular, the evolution of the photoelectron angular distributions and partial cross sections as a function of photon energy and cluster size has revealed cluster size effects similar to the ones found in solids. Our cluster angular distribution parameters have been compared to the free atoms. In addition, the measurement of the fragmentation dynamic of the clusters seems to be photon energy dependent.     

Extremely low-energy projectiles for SIMS using size-selected gas cluster ions

A new cluster time-of-flight secondary ion mass spectrometry (TOF-SIMS) was developed using a size-selected gas cluster ion as a projectile. Since a large gas cluster ion can generate many low-energy constituent atoms in a collision with the surface, it causes multiple and ultra low-energy sputtering. The mean kinetic energy of constituent atoms is provided by dividing the acceleration energy of the gas cluster ion by the number of constituent atoms. Therefore, the sputtering can be controlled to minimize the decomposition of sample molecules and substrate material by precisely adjusting the number of constituent atoms (the cluster size) and/or acceleration energy of the gas cluster ion. The cluster size was selected on the basis of the time-of-flight method using two ion deflectors attached along the ion-beam line. A high resolution of 11.7 was achieved for the cluster size/size width (M/ΔM) of Ar-cluster ions.     

Atom incorporation at edge defects in clusters

Theoretical estimates indicate that atoms originally deposited on top of a surface cluster have a significantly lower energy barrier to incorporation at edge defects compared to attachment at straight steps of sizable clusters. We have carried out the first test of these findings, by field ion microscopic observations of the behavior of Ir atoms on Ir(111) clusters with and without defects in the edges. The clusters Ir18, Ir19, Ir20, Ir55, and Ir63 have been examined. Our observations suggest that defects do not provide especially low energy paths for incorporation, which generally occur in straight steps.     

快速C60离子团在固体中的库仑爆炸过程Ⅰ球壳层模型

研究了快速C60 离子团在固体中穿行时的库仑爆炸过程 .假定离子团中离子之间位置矢量的取向是随机的 ,并且采用球壳模型描述C60 离子团的结构 .借助于线性介电响应理论和等离子 极点近似介电函数 ,推导出C60 离子团自能的解析表达式 .通过数值求解描述离子团半径变化的运动方程 ,可以发现自能中的“尾效应”可以降低C60 离子团的库仑爆炸速度 ,甚至可以稳定C60 离子团的结构     

Distributions of ions in a cluster plasma created by a laser pulse

Energy and charge distributions of ions are calculated for a cluster beam irradiated by a high-power ultrashort laser pulse. It is shown that the self-consistent field of a cluster ionized by the laser beam strongly affects the characteristics of the ion distributions obtained after the cluster explodes. The mean concentration of atoms bound into clusters in a beam, the cluster size distribution, and the focal-spot diameter are found to have a weak effect on both energy and charge distributions of the ions, whereas the energy spectrum of the produced ions is determined by the mean cluster size.     

Anisotropic explosions of hydrogen clusters under intense femtosecond laser irradiation

We report on measurements of ion energy distributions from hydrogen clusters irradiated by intense laser pulses of duration 40 and 250 fs. Contrary to the predictions of a simple Coulomb explosion model, we observe a pronounced spatial anisotropy of the ion energies from these explosions with the highest energy ions ejected along the laser polarization direction. The origin of the anisotropy is distinct from that previously seen in clusters of high Z atoms such as Ar and Xe. Furthermore, a measured increase in H+ ion energy when longer, lower intensity pulses are employed suggests that multiple-pass, vacuum heating of the cluster electrons is important in the deposition of energy by the laser.     

The ejection of atomic particles from ion bombarded solids

Considerable interest has developed in the last decade in the study of atomic collisions in solids, particularly single crystal solids. This has been heightened by the observation of channelling and the interest in industrial aspects of ion implantation. In the following article, we present an up-to-date account of the work being done on the particles ejected from a single crystal, following ion bombardment. These particles include sputtered atoms and ions, scattered atoms and ions and secondary electrons. An attempt has been made to indicate the similarities and differences, particularly between the energy and angular distributions of these ejected particles. The major link involving the dependence of these distributions of all particles on crystallography is stressed.