同步辐射X射线源的剂量增强效应实验研究

设计了多层平板铝电离室,利用北京同步辐射装置BSRF产生的30—100keV同步辐射硬X射线,测量了不同材料界面Kovar/Au/Al,Pb/Al,Ta/Al的辐射剂量梯度分布,给出了不同材料界面剂量增强因子DEF.在该装置上同时开展了硬X射线辐照引起的CMOS器件4069的剂量增强效应RDEF研究.采用双层膜结构,通过实验给出辐照敏感参数随总剂量的变化关系,从而给出器件损伤增强因子.这些方法为器件抗硬X射线辐射加固技术研究提供了实验技术手段.     

氧化铝与Al（100）基体间界面原子结构研究

本文介绍了用M e v 离子散射和沟道效应研究单晶铝表面无定型氧化层与基体之间界面原子结构的方法, 报道了AI_2_O_3_/ Al ( 1 0 0) 界面原子结构的实验结果.实验表明, 在纯氧气氛围中400 ℃ 下生成的氧化铝膜, 铝和氧原子浓度比例严格为2 与3 之比;AI_2_O_3_ 膜和Al (100)基体之间的界面极其陡峭, 氧化铝膜下Al (1 0 0 ) 基体表面的再构层不大于一个原子层. 由实验测量与用Monte corlo 方法计算结果比较, 得到再构层原子离开原来晶格位置距离为0.18埃. 室温下,Al ( 1 0 0 ) 氧吸附层的元素成份在氧原子覆盖度较低时主要为AlO. 关键词：     

复合结构界面粘接强度的声-超声评价研究

基于Ritec-SNAP测量系统建立了声-超声技术实验系统,分析了在声-超声技术评价过程中用声信号的幅频特性及应力波因子表征复合结构界面粘接强度的可行性。用粘接层的固化过程模拟复合粘接板粘接强度的变化过程,以粘接层的固化时间作为粘接强度的间接表征参量,借助于已建立的实验系统对复合结构粘接强度的评价问题进行了实验研究。实验结果表明,应力波因子与反映界面粘接强度的粘接层固化时间呈单调对应关系,且不同固化时期的应力波因子存在明显的不同特性,表明用应力波因子评价复合结构的界面粘接强度具有可行性。     

激光直接加热自背光法辐射不透明度测量方法探索

本文提出一种基于单束激光直接加热多层平面靶开展 稠密等离子体辐射不透明度特性研究的靶物理设计并对其进行了实验验证. 在XG-II激光装置上, 采用三倍频束匀滑激光辐照Au/CH/Al/CH多层平面靶产生背光源和Al样品等离子体, 通过观测背光源经样品等离子体衰减后的透过谱得到样品等离子体的辐射吸收性质. 采用Multi-1D程序对激光加热多层靶进行了辐射流体力学数值模拟, 给出了样品等离子体状态及其时间演化过程. 利用细致谱项模型 (DTA) 对实验测量的Al等离子体吸收谱进行理论分析, 表明等离子体温度在20–70 eV之间, 该结果与辐射流体力学模拟结果基本一致. 关键词： 吸收光谱 自背光 激光等离子体     

用蒙特卡罗法计算X射线在重金属界面的剂量增强系数

当X射线射入不同材料组成的界面时,在低Z材料的一侧将产生剂量增强.介绍了界面剂量增强效应的基本原理,并用蒙特-卡洛程序计算了钨-硅、钽-硅、钨-二氧化硅和钽-二氧化硅界面的剂量增强系数. 关键词： X射线 界面 辐射损伤 剂量增强系数     

背势垒层结构对AlGaN/GaN双异质结载流子分布特性的影响

首先通过一维自洽求解薛定谔/泊松方程,研究了AlGaN/GaN双异质结构中AlGaN背势垒层Al组分和厚度对载流子分布特性的影响.其次利用低压MOCVD方法在蓝宝石衬底上生长出具有不同背势垒层的AlGaN/GaN双异质结构材料,通过汞探针CV测试验证了理论计算的正确性.理论计算和实验结果均表明,随着背势垒层Al组分的提高和厚度的增加,主沟道中的二维电子气面密度逐渐减小,寄生沟道的二维电子气密度逐渐增加;背势垒层Al组分的提高和厚度的增加能有效的增强主沟道的二维电子气限域性,但是却带来了较高的 关键词： AlGaN/GaN 双异质结构 限域性 寄生沟道     

氧化铝与Al(100)基体间界面原子结构研究

本文介绍了用MeV离子散射和沟道效应研究单晶铝表面无定型氧化层与基体之间界面原子结构的方法。报道了Al₂O₃/Al(100)界面原子结构的实验结果。实验表明,在纯氧气氛围中400℃下生成的氧化铝膜,铝和氧原子浓度比例严格为2与3之比;Al₂O₃膜和Al(100)基体之间的界面极其陡峭,氧化铝膜下Al(100)基体表面的再构层不大于一个原子层。由实验测量与用Monte Carlo方法计算结果比较,得到再构层原子离开原来晶 关键词：     

X射线在重金属-二氧化硅界面的剂量增强的模拟计算

 当X射线射入不同材料组成的界面时, 在低Z材料的一侧将产生剂量增强。介绍了界面剂量增强效应的基本原理, 并用MCNP蒙特-卡洛程序计算了钨-二氧化硅、钽-二氧化硅界面的剂量增强因子。计算结果表明在X射线能量为100~150keV时,界面附近二氧化硅一侧存在较大的剂量增强。     

微合金化元素对Fe-Al界面结合的第一性原理研究

利用第一性原理中的DFT理论研究了Fe/Al界面的能量学和电子结构,讨论了替位型掺杂的元素Zn、Mn、Ni在Fe/Al界面处的作用.结果表明:元素Zn、Mn、Ni都会优先替换界面处的Fe原子,使得界面结合能增加,体系更稳定,有利于界面的结合;跨界面的Fe原子与Al原子之间的电荷布居、键长以及差分电荷密度图的计算表明:掺杂后有利于跨界面的Fe-Al间成键,从而加强了Al层与Fe基体的结合,且结合强度由强到弱依次为:掺Zn>掺Mn>掺Ni;与实验比较吻合.最后对掺杂Zn的增韧机理加以解释.     

利用不同阴极缓冲层来改善Pentacene/C60太阳能电池的性能

制备了结构为ITO/Pentacene/C₆₀/Al的双层光伏电池器件,在C₆₀/Al界面插入了常用的缓冲层材料bathocuproine(BCP)作为阴极缓冲层,通过优化BCP层的厚度来提高电池的性能并研究了阴极缓冲层的作用机理.实验发现,BCP厚度为10 nm时器件的效率最高,为0.46%.在此基础上,利用bathophenanthroline(Bphen)和3,4,9,10-Perylenetetracarb-oxylicdianhydride(PTCDA 关键词： 有机太阳能电池 Pentacene 60')" href="#">C₆₀ 缓冲层     

Nanosized Particles of Tantalum,Hafnium, and Cerium Oxides Used with Monochromatic Photon Beams and Brachytherapy Sources

High-Z nanoparticles can increase the absorbed radiation dose if they are accumulated in tumor cells. The quantitative measure of this radiosensitization effect is the dose enhancement factor (DEF), that is, the ratio of the doses absorbed in the presence and in the absence of nanoparticles. In the present work, the values of the dose enhancement factors of Ta₂O₅, HfO₂, and CeO₂ ceramic nanoparticles were calculated analytically for monochromatic radiation of the X-ray energy range (1–180 keV) and for low-energy sources for brachytherapy: ¹⁰³Pd (mean energy, 20.6 keV), ¹²⁵I (26.7 keV), and ¹³¹Cs (30.4 keV). For all types of nanoparticles in the concentration of 5 mg/mL, the values of the dose enhancement factor were high both for monochromatic radiation and for brachytherapy sources. The highest DEF values of ~1.7 were obtained for nanoparticles of tantalum oxide. For brachytherapy sources, the highest dose enhancement factors (1.48 to 1.67) were obtained for Ta₂O₅ and HfO₂ nanoparticles. These results confirm that ceramic nanoparticles are promising dose modifying agents for radiotherapy.     

Numerical investigation on thermal properties at Cu-Al interface in micro/nano manufacturing

A hybrid model by integrating TTM (two-temperature model) and MD (molecular dynamics) is proposed to investigate the properties on interface of dissimilar materials under thermal flux conditions. This model can describe the electron phonon coupling and phonon scattering at the interface of different metals easily. By comparing the Cu-Cu interface and Cu-Al interface, the atoms of the Cu-Cu interface at different sides tend to move together; while, the atoms displacements of Cu and Al are opposite along the interface, which may cause stress and voids at the interface. Moreover, the propagation mechanisms of nanocracks and the corresponding change of temperature distribution and thermal flux are investigated. The results show that the interfaces of dissimilar materials are prone to crack initiations, leading to delaminations because of the high temperature. All these are useful for understanding the deformation and failure of the interfaces structures. It implies a potential method for design and analysis of interface structure in micro/nano manufacturing.     

Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency

In this study, diode applications of Crystal Violet (CV) and PEDOT materials were studied. The Ni/p-Si/Al, Ni/CV/p-Si/Al and Ni/PEDOT:PSS/CV/p-Si/Al diodes were fabricated. The I–V (current-voltage) characteristics of all diodes were analyzed at room temperature, it was determined that the PEDOT:PSS and CV materials improved the basic diode parameters. Also, I–V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al of diode were investigated for different temperature values. It has been determined that the basic diode parameters are strongly dependent on temperature. It was determined that while the barrier height (Φ_b) increased with increasing temperature, the ideality factor (n) and the series resistance (R_s) values decreased. Using temperature-dependent measurements, it was determined that the potential barrier and ideality factor values at the contact interface has a double Gaussian distribution. In addition, C–V (capacitance-voltage) measurements of these diodes were analyzed depending on the frequency. It was found that the diode capacitance decreased with increasing frequency.     

MRI引导放射治疗中电子回转效应的蒙特卡罗研究

为了研究磁共振引导放射治疗对剂量分布的影响,采用蒙特卡罗方法研究了横向均匀磁场对6 MV光子束在4种不同人体组织材料与空气界面处因电子回转效应导致剂量分布的改变。模拟显示,对于电离能相近的几种材料,磁场对剂量分布扰动的差别较小,而且电离能较大的材料,这种扰动明显变小。结果表明,磁场的引入会影响光子束原有的剂量分布,且这种影响与材料的电离能有关。这意味着虽然磁共振引导放射治疗可以增强靶向精度,提高治疗效果,但磁场会导致光子束剂量分布的改变,且不同的组织这种改变也不相同,这将为相应的剂量算法研究带来了新的挑战。     

Plasticity and melting characteristics of metal Al with Ti-cluster under shock loading

Impurity agglomeration has a significant influence on shock response of metal materials. In this paper, the mechanism of Ti-clusters in metal Al under shock loading is investigated by non-equilibrium molecular dynamics simulations. Our results show that the Ti-cluster has obvious effects on the dislocation initiation and melting of bulk Al. First, the Ti clusters induces the strain concentrate and leads the dislocations to be initiated from the interface of Ti cluster. Second, dislocation distribution from the Ti-cluster model results in a formation of a grid-like structure, while the dislocation density is reduced compared with that from the perfect Al model. Third, the critical shock velocity of dislocation from the Ti-cluster model is lower than from perfect Al model. Furthermore, it is also found that the temperature near the interface of Ti-cluster is100 K–150 K higher than in the other areas, which means that Ti-cluster interface melts earlier than the bulk area.     

Hole Injection Enhancement of MoO_3/NPB/Al Composite Anode

An ultra-thin molybdenum(VI) oxide(MoO_3) modification layer can significantly improve hole injection from an electrode even though the MoO_3 layer does not contact the electrode. We find that as the thickness of the organic layer between MoO_3 and the electrode increases, the hole injection first increases and it then decreases.The optimum thickness of 5 nm corresponds to the best current improvement 70%, higher than that in the device where MoO_3 directly contacts the Al electrode. According to the 4,4-bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl(NPB)/MoO_3 interface charge transfer mechanism and the present experimental results, we propose a mechanism that mobile carriers generated at the interface and accumulated inside the device change the distribution of electric field inside the device, resulting in an increase of the probability of hole tunneling through the injection barrier from the electrode, which also explains the phenomenon of hole injection enhanced by MoO_3/NPB/Al composite anode. Based on this mechanism, different organic materials other than NPB were applied to form the composite electrode with MoO_3. Similar current enhancement effects are also observed.     

Thermal properties of graphene and multilayer graphene: Applications in thermal interface materials

We review the thermal properties of graphene and multilayer graphene, and discuss graphene’s applications in thermal management of advanced electronics and optoelectronics. A special attention is paid to the use of the liquid-phase-exfoliated graphene and multilayer graphene as the fillers in the thermal interface materials. It has been demonstrated that addition of an optimized mixture of graphene and multilayer graphene to the composites with different matrix materials produces the record-high enhancement of the effective thermal conductivity at the small filler loading fraction (f≤10 vol%). The thermal conductivity enhancement due to the presence of graphene in the composites has been observed for a range of matrix materials used by industry. The hybrid composites where graphene is utilized together with metallic micro- and nanoparticles allow one to tune both the thermal and electrical conductivity of these materials. Theoretical considerations indicate that the graphene-based thermal interface materials can outperform those with carbon nanotubes, metal nanoparticles and other fillers owing to graphene’s geometry, mechanical flexibility and lower Kapitza resistance at the graphene–base material interface.     

Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

The forward bias current–voltage (I–V) characteristics of Al/Rhodamine-101/n-GaAs structure have been investigated in the temperature range of 80–350 K. It has been seen a decrease in ideality factor (n) and an increase in the zero-bias barrier height (BH) with an increase in temperature. It has been seen that such a behavior of the BH and n obey Gaussian distribution of the BHs due to the BH inhomogeneities at the metal/semiconductor (MS) interface. The very strong temperature dependence of ideality factor of the structure has shown that the current processes occurring in the organic layer at the MS interface would be a possible candidate such as trap-charge limited conduction in determining the current at the intermediate and high bias regimes. Furthermore, it has been show that the Rh101 can be used to vary effective BHs for the metal/GaAs Schottky diodes. As a result, it has been determined that the BH value for conventional Al/n-GaAs SBD is remarkably higher than our own values of 0.68 eV obtained for the Al/Rh101/n-GaAs at 290 K.