Zn:Fe:LiNbO3晶体全息存储性能研究

以提拉法生长Zn(1mol%):Fe:LiNbO3, Zn(4mol%):Fe:LiNbO3,Zn(7mol%):Fe:LiNbO3晶体.Zn:Fe:LiNbO3晶体随着Zn2+浓度的增加,抗光致散射能力增加,Zn(7mol%):Fe:LiNbO3晶体抗光致散射能力比Fe:LiNbO3晶体提高两个数量级以上.测试了Zn:Fe:LiNbO3晶体衍射效率、响应时间.以Zn(7mol%):Fe:LiNbO3晶体作为存储元件,Zn(4mol%):Fe:LiNbO3晶体作为位相共轭镜,进行全息关联存储试验.试验结果显示出成像质量好、图像清晰完整、噪音小等优点.研究了Zn:Fe:LiNbO3晶体全息存储性能增强的机理.Zn(4mol%):Fe:LiNbO3晶体具有全息存储性能最佳的综合指标.     

铜铁镁三掺铌酸锂晶体的第一性原理研究

利用基于密度泛函理论的第一性原理,研究了Cu:Fe:Mg:LiNbO3晶体及对比组的电子结构和光学特性.研究显示,单掺铜或铁铌酸锂晶体的杂质能级分别由Cu 3d轨道或Fe 3d轨道贡献,禁带宽度分别为3.45和3.42 eV;铜、铁共掺铌酸锂晶体杂质能级由Cu和Fe的3d轨道共同贡献,禁带宽度为3.24 eV,吸收峰分别在3.01,2.53和1.36 eV处;Cu:Fe:Mg:LiNbO3晶体中Mg^2+浓度低于阈值或高于阈值(阈值约为6.0 mol%)的禁带宽度分别为2.89 eV或3.30 eV,吸收峰分别位于2.45 eV,1.89 eV或2.89 eV,2.59 eV,2.24 eV.Mg^2+浓度高于阈值,会使吸收边较低于阈值情况红移;并使得部分Fe^3+占Nb位,引起晶体场改变,从而改变吸收峰位置和强度.双光存储应用中可选取2.9 eV作为擦除光,2.5 eV作为读取和写入光,选取Mg^2+浓度达到阈值的三掺晶体在增加动态范围和灵敏度等参量以及优化再现图像的质量等方面更具优势.     

Nonvolatile photorefractive properties in triply doped stoichiometric Mg：Fe：Mn：LiTaO3 crystals

We have grown triply doped Mg:Fe:Mn:LiTaO3 crystals with near stoichiometry using the top seeded solution growth technique. The defect structure was investigated by infrared absorption spectra and Curie temperature. Using a blue laser as the source, excellent photorefractive properties were obtained. Nonvolatile holographic storage properties were investigated using the dual wavelength technique. We got a very high fixed diffraction efficiency and nonvolatile holographic storage sensitivity. The blue light has more than enough energy to excite holes of deep(Mn) and shallow(Fe) trap centers with the same phase, which enhance dramatically the blue photorefractive properties and the nonvolatile holographic storage. Mg2+ ion is no longer damage resistant at blue laser, but enhances photorefractive characteristics.     

Enhanced nonvolatile holographic properties in Zn,Ru and Fe co-doped LiNbO3 crystals

A series of LiNbO₃ crystals doped with various concentrations of ZnO and fixed concentrations of RuO₂ and Fe₂O₃ have been grown by the Czochralski method from the congruent melts. The type of charge carriers was determined by Kr⁺ laser (476 nm) and He–Ne laser (633 nm). The results revealed that the holes were the dominant charge carriers at blue light irradiation. Dual-wavelength and two-color techniques were employed to investigate the nonvolatile holographic storage properties of Ru:Fe:LiNbO₃ and Zn doped Ru:Fe:LiNbO₃ crystals. The essential parameters of blue nonvolatile holographic storage in Zn:Ru:Fe:LiNbO₃ crystals were enhanced greatly with the increase of Zn concentration. This indicates that the damage resistant dopants Zn²⁺ ions enhance the photorefractive properties at 476 nm wavelength instead of suppressing the photorefraction. The different mechanisms of blue photorefractive and nonvolatile holographic storage properties by dual wavelength recording in Zn:Ru:Fe:LiNbO₃ crystals were discussed.     

In:Fe:LiNbO3晶体的全息存储性能研究

在ＬｉＮｂＯ３中掺进Ｉｎ２Ｏ３和Ｆｅ２Ｏ３用恰克拉斯基法生长ｎ：Ｆｅ：ＬｉＮｂＯ３晶体,测试表明,Ｉｎ：Ｆｅ：ＬｉＮｂＯ３晶体抗光致散射能力高,响应速度快,存储保存时间长。研究了Ｉｎ：Ｆｅ：ＬｉＮｂＯ３晶体全息存储性能的机理,测得的衍射效率最大值为７３％。     

Structure and nonvolatile holographic recording of Mg:Ce:Cu:LiNbO3 crystals

A series of Mg:Ce:Cu:LiNbO₃ crystals has been grown by Czochralski method. Their infrared transmittance spectra and ultraviolet-visible absorption spectra were measured and discussed to investigate their defect structure. The nonvolatile holographic recording of Mg:Ce:Cu:LiNbO₃ crystals was characterized by the two-photon fixed method. We found that the recording time of Mg:Ce:Cu:LiNbO₃ crystals became shorter and nonvolatile diffraction efficiency decreases with the increase of Mg doping concentration, especially doping with Mg approaches and exceeds the so-called threshold. And the nonvolatility vanishes when the concentration of MgO exceeds 4 mol%. The intrinsic and extrinsic defects were discussed to explain the nonvolatile holographic properties in the Mg:Ce:Cu:LiNbO₃ crystals.     

双掺杂铌酸锂晶体的第一性原理研究

本文利用第一性原理研究了 晶体、 晶体和 晶体的电子结构和光学性质。通过对电子结构的分析,发现杂质能级的深浅与掺杂元素原子序数有关。原子序数越大,杂质能级越深。通过对 晶体、 晶体和 晶体的吸收谱进行分析,并与单掺杂 晶体的吸收谱进行比较,发现双掺杂在可见光区域吸收率明显提高,约为单掺杂的3倍。 晶体分别在380nm和590nm处形成吸收峰, 晶体可见光区域吸收率比 以及 晶体高,分别在450nm附近和660nm附近出现吸收峰, 晶体在430nm到600nm之间区域都有较高的吸收率,并在770nm的长波范围有一小的吸收峰。计算结果与双色全息存储（双光子全息存储）所用记录光的波长相符。     

Zn∶Mn∶Fe∶LiNbO3晶体位相共轭性能和全息关联存储

在同成分LiNbO3中,掺入ZnO的摩尔分数分别为1%、3%、5%、7%和9%,掺入（质量分数）0.03% MnCO3和0.08%Fe2O3,采用提拉法生长了优质Zn∶Mn∶Fe∶LiNbO3晶体.测试Zn∶Mn∶Fe∶LiNbO3晶体的OH-红外吸收光谱,抗光损伤能力和位相共轭性能.Zn离子浓度在7%和9%时,OH-吸收峰移到3 528 cm－1,讨论OH-吸收峰移动机理.随着Zn离子浓度增加,抗光损伤能力增加.Zn离子浓度增加到7%,达到阈值.Zn∶Mn∶Fe∶LiNbO3晶体抗光损伤能力比LiNbO3晶体高二个数量级,研究高掺锌Mn∶Fe∶LiNbO3晶体抗光损伤增强机理.随着Zn离子浓度增加,Zn∶Mn∶Fe∶LiNbO3晶体位相共轭反射率降低,位相共轭响应速度增加.Zn∶Mn∶Fe∶LiNbO3晶体位相共轭镜消除了光波的位相畸变.以Zn∶Mn∶Fe∶LiNbO3晶体作存储介质进行全息关联存储实验.讨论全息关联存储的工作原理.以原图象的25%和50%进行寻址,在输出平面上接收到较完整的存储图象.     

光色效应(Fe,Mn)\:LiNbO3晶体非挥发性全息存储中自衍射效应的实验研究

在双掺杂 (Fe ,Mn)…LiNbO3 晶体光色效应非挥发性全息存储实验中 ,观测到光束耦合作用导致的自增强和自衰减效应。根据这种自衍射效应 ,归纳了四种记录和光固定实验组合方案。实验结果表明 ,在记录和光固定过程中利用自增强效应得到的最高衍射效率为利用自衰减效应得到的衍射效率的两倍左右 ,说明在实际应用中必须考虑和利用自增强效应。     

敏化光波长对(Fe,Ni):LiNbO3晶体全息记录性能的影响

分别采用514 nm绿光、488 nm蓝光和390 nm紫外光作为敏化光,633 nm红光作为记录光,详细研究了敏化光波长对氧化(Fe,Ni):LiNbO3晶体全息记录性能的影响.结果表明:随着敏化光波长的逐渐减小,氧化(Fe,Ni):LiNbO3晶体的非挥发全息记录性能逐渐优化,390 nm紫外光是这三种敏化光中最优的敏化光.考虑敏化光的吸收,为了在双中心全息记录中获得最优的性能,应当选择合适波长的敏化光:一方面短波长敏化光能有效地敏化深中心;另一方面短波长敏化光的吸收太强(如对光折变效应无用的基质吸收),不能沿厚度方向有效地敏化晶体,所以实际上需折衷考虑,并从理论上给予了解释.     

Mg2+对Fe:LiNbO3晶体光折变响应时间的影响

在Fe:LiNbO₃中掺进3mol%和6mol%MgO,生长了Mg:Fe:LiNbO₃晶体.测试了Mg:Fe:LiNbO₃晶体抗光致散射能力、衍射效率、响应时间和光电导.推导响应时间与光电导之间的关系.在Fe:LiNbO₃晶体中掺进6mol%的Mg²⁺,它的抗光致散射能力比Fe:LiNbO₃晶体提高一个数量级,响应速度比Fe:LiNbO₃晶体提高四倍.     

利用双载流子四陷阱模型解释Zn:Fe:LiNbO3晶体记录过程中的自擦除现象

比较了掺Fe量相同的两种晶体Fe:LiNbO3和Zn:Fe:LiNbO3的光折变性能，并且给出了Zn:Fe:LiNbO3晶体光电导和衍射效率与入射总光强的关系.在Zn:Fe:LiNbO3晶体二波耦合实验中观察到衍射效率随记录时间的增长先增加，达到饱和后又逐渐减小的自擦除现象，并采用光折变双载流子四陷阱模型对该现象加以解释. 在此基础上选择合适的曝光时序，利用角度复用技术在该晶体中进行体全息存储，并在同一点上存入30幅图像. 关键词： 双载流子四陷阱模型 自擦除 电子-空穴竞争 角度复用     

利用双载流子四陷阱模型解释Zn:Fe:LiNbO_3晶体记录过程中的自擦除现象

比较了掺Fe量相同的两种晶体Fe :LiNbO3和Zn :Fe :LiNbO3的光折变性能 ,并且给出了Zn :Fe :LiNbO3晶体光电导和衍射效率与入射总光强的关系 .在Zn :Fe :LiNbO3晶体二波耦合实验中观察到衍射效率随记录时间的增长先增加 ,达到饱和后又逐渐减小的自擦除现象 ,并采用光折变双载流子四陷阱模型对该现象加以解释 .在此基础上选择合适的曝光时序 ,利用角度复用技术在该晶体中进行体全息存储 ,并在同一点上存入 30幅图像     

Ultraviolet band edge photorefractivity in LiNbO3:Sn crystals

The ultraviolet (UV) band edge photorefractivity of Sn-doped LiNbO(3) (LN:Sn) at 325 nm has been investigated. A sharp decrease of beam distortion, which is accompanied by a significant increase in the photoconductivity, is observed in LN:Sn crystals with Sn-doping concentrations at or above 2.0 mol%. The diffraction efficiency, the holographic recording sensitivity and response rate, and the two-wave coupling gain coefficient are greatly enhanced when the Sn-doping concentration reaches 2.0 mol% or more. Unlike LiNbO(3) doped with Hf in which the UV gratings can be erased easily by a red beam, the UV gratings in LN:Sn can withstand long-term red beam illumination. Electrons are determined to be the dominant light-induced charge carriers responsible for the UV band edge photorefraction. The observed enhancement on the UV band edge photorefractivity is found to be associated with the showup of an absorption band around 325 nm in LN:Sn crystals with Sn-doping concentrations at or above 2.0 mol%.     

Zn：LiNbO3晶体倍频性能的研究

在ＬｉＮｂＯ３晶体中掺入ＺｎＯ，生长ＺｎＯ：ＬｉＮｂＯ３晶体，当ＺｎＯ的掺入浓度高于６ｍｏｌ％时，晶体的抗光损伤能力提高两个数量级，与高掺Ｍｇｏ相似。Ｚｎ：ＬｉＮｂＯ３的倍频转换效率可达５０％左右，高于Ｍｇ；ＬｉＮｂＯ３。本文对Ｚｎ：ＬｉＮｂＯ３晶体中Ｚｎ＾２＋离子占痊以及抗光损伤增强机理进行了初步探讨。     

LD相对于铯原子超精细跃迁线的偏频锁定

Holographic storage properties of iron-doped and cerium/iron-doped LiNbO3 with different doping concentrations and treatment conditions have been measured for different recording wavelengths. The results show that at recording wavelengths of 532 nm and 633 nm the holographic storage properties of Ce:Fe:LiNbO3 are generally better than those of Fe:LiNbO3.     

The correlation of doping ions to holographic storage properties of Mg:Mn:Fe:LiNbO3 crystals

The congruent Mn(0.1 wt%):Fe(0.03 wt%):LiNbO₃ crystals doped with different concentration of MgO(0,1,3,6 mol%) have been grown by Czochralski method in air atmosphere. Some crystal samples were reduced in Li₂CO₃ powder. The defects and doping ions location in crystals were investigated by UV-Vis. absorption spectrum as well as infrared transmittance spectrum analysis. In two wave coupling experiments we determined the writing time, maximum diffraction efficiency and the erasure time of four crystal samples with He-Ne laser at 633 nm. The results indicated that Mg(3 mol%):Fe:Mn:LiNbO₃ was the most proper holographic recording media material among four crystals in the paper.     

The Comparison of the Holographic Storage Properties of Fe:LiNbO3 and Fe:Ce:LiNbO3 Crystals

Holographic storage properties of iron-doped and cerium/iron-doped LiNbO3 with different doping concentrations and treatment conditions have been measured for different recording wavelengths. The results show that at recording wavelengths of 532 nm and 633 nm the holographic storage properties of Ce:Fe:LiNbO3 are generally better than those of Fe:LiNbO3.     

近化学计量比双掺铁锰铌酸锂晶体紫外光致吸收特性的研究

研究了不同锂含量的双掺铁锰铌酸锂晶体的紫外光致吸收特性,结果表明,同成分晶体的紫外光致吸收系数较低,随着锂含量的增加,晶体的紫外光致吸收系数逐渐增大,当晶体中的锂含量达到49.57mol%附近时,紫外光致吸收系数达到最大值4.20 cm-1,进一步增加晶体中的锂含量,饱和光致吸收系数开始下降。在此基础上,提出了近化学计量比双掺铁锰铌酸锂晶体的双色非挥发全息存储的三中心模型,即随着晶体锂含量的增加,双掺铁锰晶体的光折变中心除了Fe2+/Fe3+,Mn2+/Mn3+外,还将增加双极化子/小极化子中心。