Structural and Electrical Properties of PZT/PVDF Piezoelectric Nanocomposites Prepared by Cold-Press and Hot-Press Routes

The 0-3 PZT/PVDF piezoelectric composites are prepared separately by hot-press and cold-press processes. The effects of the PZT content and the shaping-process on the composites are studied. The experimental results indicate that composites with 70% PZT nanopowders prepared by the hot-press method exhibit excellent piezoelectric and dielectric properties. The maxima of d₃₃ and ε of the composites prepared by hot-press method are about 30% and 65% higher than those prepared by the cold-press method, respectively. This is mainly attributed to the favourable coupling of the two materials in the process of the hot press and the formation of the β-type PVDF, which possesses better electric properties.     

Synthesis of ZnO films with a special texture and enhanced field emission properties

ZnO films with special textures are fabricated on Mo-coated Al₂O₃ ceramic substrates by the catalyst-free electron beam evaporation method, and the as-deposited films are treated by hydrogen plasma. It is found that the surface morphologies of the films are changed significantly after hydrogen plasma treatment and that the films consist of vertically standing and intersecting nanosheets. A lower turn-on field of 1.2 V/μm and an enhanced current density ～0.11 mA/cm² at 2.47 V/μm are achieved. The low threshold field and the high emission current density are attributed primarily to the unique shape and smaller resistivity of the ZnO nanosheet films.     

A hybrid magnetostrictive-piezoelectric barrel-stave projector

A hybrid magnetostrictive-piezoelectric barrel-stave projector is designed and developed. The new type transducer is driven by the union of rare-earth giant magnetostrictive material Terfenol-D and PZT piezoelectric ceramic. Combining the advantages of low frequency performance within a compact size, it proves that the hybrid projector has a much broader band and higher sound power than that with single magnetostrictive or piezoelectric driver by the simulated and measured results. The prototype of the hybrid projector has a size of 88 mm in outside diameter and 316 mm in length, with an underwater resonant frequency of 1.30 kHz, Q factor of 1.43 for -3 dB bandwidth, and transmitting voltage response level of 135.1 dB at the resonant frequency.     

PIEZOELECTRIC Pb(Zr, Ti)O3 MICRO-DEVICES FOR SCANNING FORCE MICROSCOPY AND ULTRA-DENSITY DATA STORAGE

In this paper we report two types of micro devices based on Pb(Zr, Ti)O₃ (PZT) thin films for improving the throughput of scanning force microscopy (SFM) or data storage using SFM. One is a piezoelectric cantilever array integrated with force sensor as well as z-actuator on each cantilever for parallel operation. The 125-μm-long PZT micro cantilever with a natural resonant frequency of 189 kHz has a high actuation sensitivity of 75 nm/V. Independent parallel images using two cantilevers of the array were obtained. The other is a novel micro-SFM device that is expected to replace the cantilever, the deflection detection unit, and the macro-fabricated scanner which is the bottle neck limiting the single probe acquisition rate. The bridge-structured device has shown a microscopy sensitivity of 0.32 nA/nm in vertical direction and actuation abilities of 70-80nm/±V in the lateral direction.     

Advantage analysis of PMN-PT material for free-flooded ring transducers

The acoustic radiation characteristics of free-flooded ring transducers made of PZT4 and PMN-PT materials are calculated and compared.First,the theoretical formulae for free-flooded ring transducers are studied.The resonant frequencies of a transducer made of PZT4 and PMN-PT materials are calculated.Then,the transmitting voltage responses of the free-flooded ring transducers are calculated using the finite element method.Finally,the acoustic radiation characteristics of the free-flooded ring transducers are calculated using the boundary element method.The calculated results show that the resonant frequencies of the free-flooded ring transducer made of PMN-PT are greatly reduced compared with those made of PZT4 with the same size.The transmitting voltage response of the transducer made of PMN-PT is much higher than that of the transducer made of PZT4.The calculated 3-dB beamwidth of the acoustic radiated far-field directivity of the free-flooded ring transducer made of PZT4 at the resonant frequency 1900 Hz is 63.6 and that of the transducer made of PMN-PT at the resonant frequency 1000 Hz is 64.6.The comparison results show that the free-flooded ring transducer made of PMN-PT material has many advantages over that made of PZT4.The PMN-PT is a promising material for improving the performance of free-flooded ring transducers.     

Tunable Ba_0.5 Sr_0.5 TiO₃ film bulk acoustic resonators using SiO₂ /Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias(< 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.     

Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si (111) Substrate

Er₂O₃ thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er₂O₃ thin film is a mosaic of single-crystaldomains. The interplanar spacing d in-plane residual strain tensor ε_| and the strain relaxation degree ξ are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulkEr₂O₃. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic.     

Effects of LSMO Buffer Layer on Crystalline Orientation and Ferroelectric Properties of Bi2.9Pr0.9Ti3O12 Thin Films Prepared by Radio-Frequency Magnetron Sputtering

Ferroelectric Bi_2.9Pr_0.9Ti₃O₁₂/La_0.67Sr_0.33MnO₃ (BPT/LSMO) films are fabricated on Pt(111)/TiO₂/SiO₂/Si substrates by rf-magnetron sputtering method. The influences of the LSMO deposition conditions and LSMO layer thickness on properties of BPT thin films are studied. The LSMO layer deposited at 300°C and 450°C favours preferred (117) orientation of BPT films, while deposited at 600°C for LSMO layer leads to strong (111)-preferred orientation of BPT film. With the LSMO buffer layer, the films exhibit improved ferroelectric properties and Pt/BPT/LSMO(20nm)/Pt capacitor shows the largest remnant polarization P_r of 18.4μC/cm² at 14V. A similar change in dielectric constant with the increase of LSMO layer thickness is also observed and the highest dielectric constant of 342.7 is obtained for the Pt/BPT/LSMO(20nm)/Pt film. Compared with the Pt/BPT/Pt film, the Pt/BPT/LSMO/Pt films exhibit better fatigue endurance after 5×10⁹ switching cycles. Moreover, the LSMO layer has apparent effect on leakage current density and the Pt/BPT/LSMO(20nm)/Pt film exhibits the lowest leakage current density.     

Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films

Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride （AlN） piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6 dB at the resonant frequency 2.537 GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79. 7.     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

Application of Electron-Shelving Detection via 423 nm Transition in Calcium-Beam Optical Frequency Standard

A new scheme of small compact optical frequency standard based on thermal calcium beam with application of 423 nm shelving detection and sharp-angle velocity selection detection is proposed. Combining these presented techniques, we conclude that a small compact optical frequency standard based on thermal calcium beam will outperform the commercial caesium-beam microwave dock, like the 5071 Cs clock （from Hp to Agilent, now Symmetricom company）, both in accuracy and stability.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Suppression of Chaos and Phase Locking in Two Coupled Nonidentical Neurons under Periodic Input

Dynamical behaviour of two coupled neurons with at least one of them being chaotic is presented. Bifurcation diagrams and Lyapunov exponents are calculated to diagnose the dynamical behaviour of the coupled neurons with the increasing coupling strength. It is found that when the coupling strength increases, a chaotic neuron can be controlled by the coupling between neurons. At the same time, phase locking is studied by the maxima of the differences of instantaneous phases and average frequencies between two coupled neurons, and the inherent connection of phase locking and the suppression of chaos is formulated. It is observed that the onset of phase locking is closely related to the suppression of chaos. Finally, a way for suppression of chaos in two coupled nonidentical neurons under periodic input is suggested.     

Fabrication of Long-Period Fibre Gratings Using 800 nm Femtosecond Laser Pulses

Long-period fibre gratings inside standard single-mode optical communication fibres are successfully fabricated with infrared femtosecond laser pulses. The refractive index perturbations are well confined within the fibre core by choosing the proper laser focusing parameters and translation speed of the fibre during the direct laser writing process. With the self-focusing effect considered and at a constant average irradiation dose of 1.62 × 10^3 J/（cm^2μm）, the threshold intensity for fabricating long-period gratings with infrared femtosecond laser pulses is determined to be 5.13 × 10^13 W/cm2.     

Stretching in a model of a turbulent flow

Using a multi-scaled, chaotic flow known as the KS model of turbulence [J.C.H. Fung, J.C.R. Hunt, A. Malik, R.J. Perkins, Kinematic simulation of homogeneous turbulence by unsteady random fourier modes, J. Fluid Mech. 236 (1992) 281-318], we investigate the dependence of Lyapunov exponents on various characteristics of the flow. We show that the KS model yields a power law relation between the Reynolds number and the maximum Lyapunov exponent, which is similar to that for a turbulent flow with the same energy spectrum. Our results show that the Lyapunov exponents are sensitive to the advection of small eddies by large eddies, which can be explained by considering the Lagrangian correlation time of the smallest scales. We also relate the number of stagnation points within a flow to the maximum Lyapunov exponent, and suggest a linear dependence between the two characteristics.     

Single Qubit and Its Universal Logic Gate Made of a Heisenberg Spin Cluster with Five Particles

We investigate an anisotropic Heisenberg spin cluster with five particles controlled by a time-dependent magnetic field. With the algebraic dynamical method, we obtain the exact analytical solution to the time dependent Schr6dinger equation. Based on the analytical solution, it is shown that the system can be used as a universal single qubit logic gate controlled by the strength and frequency of the magnetic field, and the six special single qubit logic gates can be realized physically. We also discuss the anti-decoherence property of the qubit and its logic gates resulted from particle coupling effect and collectivity of the cluster.     

Teleportation of an Arbitrary Multipartite GHZ-Class State by One EPR Pair

We present a scheme for perfectly teleporting an arbitrary and unknown N-particle GHZ-class state from a sender to a receiver. We just need one quantum channel composed of two or three particles in the maximally entangled state. The sender performs one Bell-state measurement on two of her particles and N - 1 Hadamard operations and N - 1 yon Neumann measurements on the rest N - 1 particles. The receiver adopts one corresponding unitary transformation on his particles shared with the sender. After that, the receiver can obtain the original N-particle GHZ-class state by introducing N - 1 ancillary particles and carrying out N - 1 controlled-NOT operations. We also generalize the scheme to the case of controlled teleportation.     

Analysis of X（1576） as a Tetraquark State with the QCD Sum Rules

We take the viewpoint that X（1576） is the tetraquark state which consists of a scalar diquark and an antiscalar-diquark in relative P-wave, and calculate its mass in the framework of the QCD sum rule approach. The numerical value of the mass mx= （1.66 =k 0.14） GeV is consistent with the experimental data. There might be some tetraquark components in the vector meson X（1576）.