InAs/GaAs和InAs/InxGa1-xAs/GaAs纳米线异质结构的生长研究

利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/In _{x Ga1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有In x Ga1-xAs组分渐变缓冲段的InAs/In x Ga1-x关键词： 纳米线异质结构 xGa1-xAs')" href="#">InxGa1-xAs 组分渐变缓冲层 金属有机化学气相沉淀法}     

GaAs薄膜的有效量子限制长度及其极化子特性

本文用分数维方法研究Al_xGa_1-xAs衬底上GaAs薄膜中的极化子特性, 提出了确定GaAs薄膜的有效量子限制长度的一个新方法, 解决了原来方法中在衬底势垒处有效量子限制长度发散的困难, 得到了Al_xGa_1-xAs衬底上GaAs薄膜中的极化子的维数和结合能. 关键词： 分数维方法 极化子 GaAs薄膜     

纤锌矿GaN/AlxGa1-xN量子阱中极化子能量

采用LLP变分方法研究了纤锌矿GaN/Al_xGa_1-xN量子阱材料中极化子的能级,给出极化子基态能量、第一激发态能量和第一激发态到基态的跃迁能量与量子阱宽度和量子阱深度变化的函数关系。研究结果表明,极化子基态能量、第一激发态能量和跃迁能量随着阱宽L的增大而开始急剧减小,然后缓慢下降,最后接近于体材料GaN中的相应值。基态能量和第一激发态到基态的跃迁能量随着量子阱深度的增加而逐渐增加,窄阱时这一趋势更明显。纤锌矿氮化物量子阱中电子-声子相互作用对能量的贡献比较大,这一值(约40meV)远远大于闪锌矿(GaAs/Al_xGa_1-xAs)量子阱中相应的值(约3meV)。因此讨论GaN/Al_xGa_1-xN量子阱中电子态问题时应考虑电子-声子相互作用。     

GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/Al_xGa_1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律，并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外，用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算，并对计算结果做了比较，发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导. 关键词： 球形量子点 解析方法 平面波展开方法 有效质量     

有效质量差异和电场对GaN/AlxGa1-xN球形量子点电子结构的影响

用平面波展开法对GaN/Al_xGa_1-xN球形量子点中类氢杂质态能级随量子点半径、Al组分以及结合能随Al组分的变化规律进行了详细讨论.计算了量子点内外有效质量差异对杂质态能级和结合能的修正，结果表明对于Al组分较高的GaN/Al_xGa_1-xN球形量子点，电子有效质量差异对杂质能级和结合能的修正不能忽略.考虑电子有效质量差异后，进一步具体计算了杂质结合能随量子点半 关键词： 球形量子点 平面波展开法 有效质量     

应力导致InAs/In0.15Ga0.85As量子点结构中In0.15Ga0.85As阱层的合金分解效应研究

利用固源分子束外延技术，在In_0.15Ga_0.85As/GaAs量子阱生长了两个InAs/In_0.15Ga_0.85As量子点(DWELL)样品.通过改变其中一个InAs DWELL样品中的In_0.15Ga_0.85As阱层的厚度和生长温度，获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果，发现该样品量子点的光学性质也同时得到 关键词： 合金分解效应 0.15Ga_0.85As量子点')" href="#">InAs/In_0.15Ga_0.85As量子点 光致发光光谱 压电调制光谱     

Ti1－xCrxO2±δ体系的相关系、晶体结构和磁性能研究

采用溶胶凝胶法制备了Ti_1-xCr_xO_2±δ体系系列样品.利用扫描电子显微镜(SEM)，X射线光电子能谱(XPS)，粉末X射线衍射分析(XRD)方法研究了Ti_1-xCr_xO_2±δ系列样品的颗粒尺寸、形貌、组分化学态、相关系和固溶区范围；并利用超导量子干涉磁强计对样品的磁性能进行了研究.采用Rietveld结构精修的方法研究了Cr的不同掺杂量对TiO₂晶体结构的影响，研究表明，1000℃烧结的样品的固溶区范围是x=0—0.03，为金红石单相；随着Cr掺杂量的增加，金红石相晶胞参数规律性地减小；当x>0.03，为金红石相和CrO₂相两相共存.综合XRD和磁性测量结果，500℃烧结的样品的固溶区范围是x=0—0.02，为锐钛矿单相；随着Cr掺杂量的增加，锐钛矿相晶胞参数规律性地减小；当x≥0.04，为锐钛矿相和绿铬矿相(Cr₂O₃)两相共存.XPS实验结果表明，500℃和1000℃退火的样品中Cr都是以Cr⁺³和Cr⁺⁶两种化学态存在，1000℃烧结的样品中可能有更多的Cr³⁺转化为Cr⁶⁺.根据M-H和M-T曲线的测试结果发现，本文500℃烧结的Ti_1-xCr_xO_2±δ体系样品当x=0—0.02时，为室温铁磁性.当x≥0.04时，由铁磁相和顺磁相所组成，在低温下有较强的铁磁性；室温下主要是顺磁相，铁磁相只占据很小的体积分数. 关键词： 1-xCr_xO_2±δ体系')" href="#">Ti_1-xCr_xO_2±δ体系 相关系 固溶区 磁性能     

AlxGa1-xN/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响

用薛定谔方程和泊松方程自洽计算的方法研究了Al_0.75Ga_0.25N/GaN对称双量子阱(DQWs)中子带间跃迁(ISBT)的波长和吸收系数对中间耦合势垒高度、中间耦合势垒宽度、势阱宽度和势垒掺杂浓度的依赖关系.研究发现，第一奇序子带S_1ood与第二偶序子带S_2even ISBT波长随着中间耦合势垒高度的降低而变短.当中间耦合势垒高度高于0.62 eV时，S_{1odd< 关键词： 自洽 x}Ga_1-xN/GaN双量子阱')" href="#">Al_xGa_1-xN/GaN双量子阱 子带间跃迁     

NiS2-xSex在x=1.00附近的反铁磁量子相变

针对NiS_2-xSe_x系统在x=1.0０附近发生的反铁磁量子相变，制备了一系列NiS_2-xSe_x(x=0.96, 0.98, 1.00, 1.05, 1.10和1.20)多晶样品，对其结构、磁性质和电阻率进行了系统的观测.结果发现：样品磁化率-温度关系呈现典型的强关联电子系统特征；与铜氧化物超导体相类似，它们的电阻率-温度关系在很宽的温 关键词： 量子相变 反铁磁自旋涨落 2-xSe_x体系')" href="#">NiS_2-xSe_x体系     

Co(S1-xSex)2系统中的铁磁量子相变

针对Co(S_1-xSe_x)₂系统在x=0.11附近发生的铁磁金属到顺磁金属相变，制备了一系列不同Se替代浓度的多晶样品.通过对其结构和电阻率-温度ρ(T)关系的系统观测，结果发现，样品铁磁相变温度T_C随着Se替代浓度x值的增加，以(1-x)^1/2关系单调下降，其二级铁磁相变转变为一级相变 关键词： 量子相变 自旋量子涨落 1-xSe_x)₂')" href="#">Co(S_1-xSe_x)₂     

Physical characterization of OMVPE-grown AlxGa1-xAs multi-layer films by means of non-destructive optical reflectometry

A novel Fourier transform technique which was developed by us previously, is applied in this work for non-destructive determination of thickness and refractive index steps of experimental multilayer heteroepitaxial structures. No time consuming least-squares curve-fits are required and theoretically there is no limit on the number of layers which can be analyzed. In order to demonstrate the above method experimentally, multilayer structures of Al_xGa_1-xAs containing up to five layers on GaAs substrates, were grown by organometallic vapour phase epitaxy (OMVPE). For calibration purposes, initial experiments involved the growth of Al_xGa_1-xAs single epilayers on GaAs substrates by the same technique. Layers were grown at five different compositions from x = 0.1 to x = 0.5. Both photoluminescence (at 12 K) and double-crystal X-ray diffraction measurements were undertaken on the single layers in order to establish the composition of the material. The results show excellent correspondence with each other. These results were also compared to secondary ion mass spectrometry data. The agreement between the optical technique developed by us and the other analytical methods was excellent.     

Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a Al_xGa_1−xAs 2D periodic array on a GaAs (1 1 1)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. Al_xGa_1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiN_x masks. A uniform Al_0.50Ga_0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1 μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400 nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55 μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities

In some devices based on GaAs/Al_xGa₁-_xAs heterostructures, the Al_xGa₁-_xAs plays the role of a wide band gap “insulator”. These devices are therefore excellent systems for studying charge trapping in Al_xGa₁-_xAs. It is a poorly understood property of Al_xGa₁-_xAs that incorporation of any n-type dopant results in the formation of a deep electron trap, the DX center. Recent experiments on heterostructure devices have probed both thermal and athermal (hot electron) capture and emission by the DX center. By observing the trapping behavior as the composition (Al mole fraction) of the alloy is varied, the relationship between the trap level and the band structure of the host material has been clarified. A remarkable result is the observation of electron trapping at alloy compositions where the trap state is resonant with the conduction band.     

高灵敏度Sb基量子阱2DEG的霍尔器件

用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上。设计了由双δ掺杂构成的Hall器件的新结构，有效地提高了器件的面电子浓度。与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比，室温下器件电子迁移率从15 000 cm²·V^-1·s^-1 提高到16 000 cm²·V^-1·s^-1。AFM测试表明材料有好的表面形态和结晶质量。从77 K 到300 K对Hall器件进行霍尔测试，结果显示器件不同温度范围有不同散射机构。双δ掺杂结构形成高灵敏度、高二维电子气（2DEG）浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景。     

全光固体条纹相机的理论及其静态实验研究

全光固体条纹相机采用空间调制抽运光激发平板波导光偏转器,通过精确控制抽运光和信号光之间的时间延迟,实现对入射到波导芯层信号光的偏转扫描.它能有效解决传统变像管条纹相机因空间电荷效应造成的动态范围降低以及光电阴极材料在红外波段探测受限等问题,且结构简单,系统稳定性高,理论时间分辨率可达皮秒甚至亚皮秒量级.本文围绕全光固体条纹相机的核心部件—–AlxGa1-xAs/GaAs/AlxGa1-xAs平板波导光偏转器,研究了在带填充效应、带隙收缩效应以及自由载流子吸收效应作用下GaAs折射率的变化情况;在GaAs折射率变化达到0.01量级,信号光束斑大小和波导宽度之比p=0.5时,得到系统的理论时间分辨率为2 ps;按照静态实验条件求得的理论空间分辨率为17 lp/mm,实验结果显示其值为9 lp/mm.     

Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

We theoretically investigate the wave-vector filtering(WVF) effect for electrons in an antiparallel asymmetric doubleδ-magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic(FM) stripes on the top and the bottom of GaAs/Al_xGa_(1-x) As heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional(2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias,which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.     

High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors

In this paper we report studies on normal incidence, InAs/In_0.15Ga_0.85As quantum dot infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP structures with similar dot and well dimensions were grown and devices were fabricated from each wafer. Of the three devices studied, the first served as the control, the second was grown with an additional 400 Å AlGaAs blocking layer, and the third was grown on a GaAs n+ substrate with the intention of testing a single pass geometry. Spectral measurements on all three devices show one main peak in the long-wave IR (≈8 μm). The absorption was attributed to the bound-to-bound transition between the ground state of the InAs quantum dot and the ground state of the In_0.15Ga_0.85As well. Calibrated peak responsivity and peak detectivity measurements were performed on each device at 40, 60, and 80 K. For the same temperatures, frequency response measurements from 20 Hz to 4 kHz at a bias of V_b=−1 V were also performed. The addition of the blocking layer was shown to slightly enhance responsivity, which peaked at 2.4 A/W at 77 K, V_b=−1 V and responsivity was observed to be significantly reduced in the single pass (n+ substrate) sample. The rolloff of the frequency response was observed to be heavily dependent on temperature, bias, and irradiance. The results from the characterization of each sample are reported and discussed.     

三元混晶四层系统的表面和界面声子极化激元

运用改进的无规元素等位移模型和玻恩-黄近似,结合电磁场的麦克斯韦方程和边界条件,研究了真空/极性二元晶体薄膜/极性三元混晶薄膜/极性二元晶体衬底四层系统的表面和界面声子极化激元.以AlxGa1-xAs/GaAs和ZnxCd1-xSe/ZnSe为例,获得了表面和界面声子极化激元模的色散关系以及表面模和界面模的频率随混晶组分和薄膜厚度的变化关系.结果表明,三元混晶四层异质结系统中存在七支表面和界面声子极化激元模,且这七支表面模和界面模的频率随混晶组分和薄膜厚度呈非线性变化,三元混晶的"单模"和"双模"性也在色散曲线中得到了很好的体现.