Effects of Single Vacancy on Electronic and Optical Properties for γ-Si3N4

基于密度泛函理论的广义梯度近似方法研究了中性单点缺陷γ-Si₃N₄的能量、电子结构和光学性质. N缺陷的结合能和形成能比Si(8)和Si(4)位的都低,显示γ-Si₃N₄中N缺陷更易形成. 分析了各种缺陷情况下相应的态密度. Si缺陷能形成p型半导体,N缺陷使材料形成间接带隙的n型半导体. Si缺陷情况下,物质有相对大的静态介电常数,在可见光区和红外区,吸收和反射得到显著改善,但是N缺陷却没什么影响.     

掺稀土元素(Y，La)的γ-Si3N4的电子结构和光学性质

采用基于密度泛函的平面赝势方法(PWP)和广义梯度近似(GGA)，计算了未掺杂和掺杂稀土(Y，La)的γ-Si₃N₄中N-Y(La)键的布居值和它们的键长、掺杂后能带结构和态密度.发现掺杂后的带隙要减小，并且可能形成新的半导体，这将为找到新的半导体提供一个方向.还进一步研究了掺杂稀土(Y，La)后的光学性质，掺杂后有更高的静态介电常数，可以作为新的介电材料和好的折射材料，这对于一定的光学元件有潜在的应用前景.     

三明治结构Tan(B3N3H6)n+1 团簇的磁性和量子输运性质

利用密度泛函理论和非平衡格林函数方法, 本文对小尺寸团簇Ta_n(B₃N₃H₆)_n+1 (n ≤ 4)的磁性和量子输运性质进行了系统的研究. 计算结果表明, 此类体系采用三明治结构作为其基态并且具有较高的稳定性. 体系的磁矩随团簇尺寸的增大而线性增大. 当把Ta_n(B₃N₃H₆)_n+1团簇耦合到Au电极上时, 形成的Au-Ta_n(B₃N₃H₆)_n+1-Au体系在有限偏压下展示出了较强的自旋过滤能力, 因而可以被看做是一类新型的低维自旋过滤器.     

β-Si3N4电子结构和红外和拉曼频率的第一性原理研究

分别用PW91，B3LYP两种密度泛函方法和全电子高斯基组对β-Si₃N₄的几何结构进行全优化(包括晶格参数和原子坐标)，结果和实验值符合良好. 同时计算了能带结构和态密度.在此基础上分别用上述两种方法计算了Γ点拉曼振动频率，并按对称性进行分类，将得到的11种拉曼活性模式的频率值与实验值以及其他文献值进行了比较，进一步确定了A_g模式为中等频率，值约459cm^-1. 计算结果表明     

C3N4的高温高压同步辐射研究

利用激光加热金刚石对顶砧技术在高温高压条件下合成了纯beta相和立方相C₃N₄beta相C₃N₄所属对称群为P63/M (176).对石墨相与beta相C₃N₄的X射线衍射结果进行了精确分析, 得到优化晶胞参数.原位高压同步辐射X射线衍射分析表明, 在6GPa时由beta相到立方相C₃N₄的相转变已经发生, 之后两相共存直到19GPa时相变结束得到纯立方相C₃N₄.     

基于非金属掺杂g-C3N4的均匀B-C-N三相单层

基于第一性原理方法计算,通过在g-C₃N₄中掺杂C、B和N原子, 预测了四种元素均匀分布的B-C-N三元单层材料． 除了B₄-C₃N₄单层材料是一个具有1.18 eV带隙的半导体, 其余三种C-B-N三元单层材料都是金属材料．其中,B₃C-C₃N₄是铁磁金属,其净磁矩为0.57 μB/原胞,可用于构建自旋电子器件材料．计算的形成能显     

ECR-PECVD制备Si3N4薄膜的光学特性研究

本文研究了ECR-PECVD制备的Si₃N₄薄膜的光学特性.得到的Si₃N₄薄膜具有光致发光效应,在280℃沉积制备的Si₃N₄薄膜的光致发光波长为400nm,具有较好的单色性.测试分析了Si₃N₄薄膜对可见光、红外光具有较高的透射性能,Si₃N₄薄膜可作为红外光的增速减反射膜.     

Si3N4的晶体化和ZrN/Si3N4纳米多层膜的超硬效应

研究了Si₃N₄层在ZrN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响. 一系列不同Si₃N₄层厚度的ZrN/Si₃N₄纳米多层膜通过反应磁控溅射法制备. 利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明，由于受到ZrN调制层晶体结构的模板作用，溅射条件下以非晶态存在的Si₃N₄层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体，ZrN/Si₃N₄纳米多层膜形成共格外延生长的柱状晶，并相应地产生硬度升高的超硬效应. Si₃N₄随层厚的进一步增加又转变为非晶态，多层膜的共格生长结构因而受到破坏，其硬度也随之降低.     

高比表面积TiO2与g-C3N4复合材料的光催化性能及机理研究

本文通过简单的溶剂热法制备了g-C₃N₄与高比表面积的TiO₂复合材料,该方法操作简单且能耗低. 甲基橙降解实验结果表明,高比表面积的TiO₂有效提高了光催化活性. 光电化学测试结果表明,与g-C₃N₄复合后,TiO₂的电荷载流子迁移速率得到明显改善. g-C₃N₄/高比表面积-TiO₂的光催化活性很强,在100分钟内,6%-g-C₃N₄/高比表面积-TiO₂对甲基橙的降解程度可达92.44%. 6%-g-C₃N₄/高比表面积-TiO₂不仅具有良好的光催化降解性能,还具有较高的稳定性. 本文对6%-g-C₃N₄/高比表面积-TiO₂的光催化机理也进行了系统的研究.     

光腔衰荡光谱法测量大气中的NO3和N2O5

本文应用基于二极管激光器的双路光腔衰荡光谱技术，分别对大气中NO₃和N₂O₅浓度进行监测. 通过使用实验室标准样校正有效吸收腔长比R_L和系统的总损耗系数?，并获得了NO₃有效吸收截面. 该装置在时间分辨率为1 s时，对NO₃的测量灵敏度达到1.1 pptv，N₂O₅被在线转换成NO₃，从而被另一路光腔衰荡光谱装置探测. 利用该装置，对合肥市区冬季夜间大气中的NO₃，N₂O₅浓度进行了实时监测. 通过对比一次大气快速清洁过程中氮氧化物、臭氧、PM_2.5等组分的浓度变化，讨论了大气环境下可能影响NO₃及N₂O₅浓度的因素.     

β-Si3N4电子结构和光学性质的第一性原理研究

采用基于密度泛函的平面波赝势方法(PWP)和广义梯度近似(GGA)，计算了β相氮化硅(β-Si₃N₄)的电子结构和光学性质，得到的晶格常数、能带结构等均与实验结果较好符合.进一步还研究了β-Si₃N₄的光吸收系数以及禁带宽度随外压力的变化规律，为β-Si₃N₄材料在高压条件下的应用提供了理论参考. 关键词： β相氮化硅 电子结构 能带结构 光学性质     

Preparation, characterization and luminescence properties of porous Si3N4 ceramics with Eu2O3 as sintering additive

Porous Si₃N₄ ceramics with photoluminescence properties were prepared by pressureless sintering using α-Si₃N₄ powder as raw material and Eu₂O₃ as sintering additive. Chemical composition, phase formation, microstructure and photoluminescence properties of porous Si₃N₄ ceramics were studied by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence measurements (PL/PLE). The results show that single Eu₂O₃ additive promotes α→β transformation but not significant densification. A broad band emission center at 570 nm assigned to Eu²⁺ is observed, Eu³⁺ in Eu₂O₃ is (partially) converted to Eu²⁺ by reaction with Si₃N₄, which results in a lower β aspect ratio and β-content compared to the other Ln (Ln=lanthanide) oxide additives.     

Theoretical investigation on the electronic structure, elastic properties, and intrinsic hardness of Si2N2O

According to the density functional theory we systematically study the electronic structure, the mechanical prop- erties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli (bulk modulus, Young’s mod- ulus, and shear modulus) are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of β-Si3N4 and γ-Si3N4.     

Structural, electronic and thermodynamic properties of cubic Zn3N2 under high pressure from first-principles calculations

The structural, electronic and thermodynamic properties of cubic Zn₃N₂ under hydrostatic pressure up to 80 GPa are investigated using the local density approximation method with pseudopotentials of the ab initio norm-conserving full separable Troullier-Martin scheme in the frame of density functional theory. The structural parameters obtained at ambient pressure are in agreement with experimental data and other theoretical results. The change of bond lengths of two different types of Zn-N bond with pressure suggests that the tetrahedral Zn-N bond is slightly less compressible than the octahedral bond. By fitting the calculated band gap, the first and second order pressure coefficients for the direct band gap ofthe Zn₃N₂ were determined to be 1.18×10⁻² eV/GPa and −2.4×10⁻⁴ eV/(GPa)², respectively. Based on the Mulliken population analysis, Zn₃N₂ was found to have a higher covalent character with increasing pressure. As temperature increases, heat capacity, enthalpy, product of temperature and entropy increase, whereas the Debye temperature and free energy decrease. The present study leads to a better understanding of how Zn₃N₂ materials respond to compression.     

Predictions of pressure-induced structural transition, mechanical and thermodynamic properties of α-and β-Si3N4 ceramics: ab initio and quasi-harmonic Debye modeling

The plane-wave pseudo-potential method within the framework of ab initio technique is used to investigate the structural and elastic properties of α-and β-Si3N4.The ground-state parameters accord quite well with the experimental data.Our calculation reveals that α-Si3N4 can retain its stability to at least 40 GPa when compressed at 300 K.The α→β phase transformation would not occur in a pressure range of 0-40 GPa and a temperature range of 0-300 K.Actually,the α→β transition occurs at 1600 K and 7.98 GPa.For α-and β-Si3N4,the c axes are slightly more incompressible than the a axes.We conclude that β-Si3N4 is a hard material and ductile in nature.On the other hand,β-Si3N4 is also found to be an ionic material and can retain its mechanical stability in a pressure range of 0-10 GPa.Besides,the thermodynamic properties such as entropy,heat capacity,and Debye temperature of α-and β-Si3N4 are determined at various temperatures and pressures.Significant features in these properties are observed at high temperature.The calculated results are in good agreement with available experimental data and previous theoretical values.Many fundamental solid-state properties are reported at high pressure and high temperature.Therefore,our results may provide useful information for theoretical and experimental investigations of the Si3N4 polymorphs.     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明，在六方纤锌矿结构的晶体AlN调制层的模板作用下，通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体，AlN/Si₃N₄纳米多层膜形成共格外延生长的结构，相应地，多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态，多层膜的共格生长结构因而受到破坏，其硬度也随之降低.分析认为，AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

Crystallization of amorphous Si3N4 and superhardness effect in HfC/Si3N4 nanomultilayers

HfC/Si₃N₄ nanomultilayers with various thicknesses of Si₃N₄ layer have been prepared by reactive magnetron sputtering. Microstructure and mechanical properties of the multilayers have been investigated. The results show that amorphous Si₃N₄ is forced to crystallize and grow coherently with HfC when the Si₃N₄ layer thickness is less than 0.95 nm, correspondingly the multilayers exhibit strong columnar structure and achieve a significantly enhanced hardness with the maximum of 38.2 GPa. Further increasing Si₃N₄ layer thickness leads to the formation of amorphous Si₃N₄, which blocks the coherent growth of multilayer, and thus the hardness of multilayer decreases quickly.     

Influence of hydrothermally modified γ-Al2O3 on the properties of NiMo/γ-Al2O3 catalyst

The influence of hydrothermal modification of γ-Al₂O₃ on the properties of NiMo/γ-Al₂O₃ catalyst was investigated in this paper. The experimental results showed that the use of the modified γ-Al₂O₃ in the preparation of the NiMo/γ-Al₂O₃ catalyst led to the increase of the dispersion of the surface Mo and Ni oxides, favored the formation of the poly-molybdates and promoted the reduction of the active Mo oxides owing to the increase of the surface acidity of the modified γ-Al₂O₃. Therefore, the NiMo/γ-Al₂O₃ catalyst supported on the modified γ-Al₂O₃ exhibited a higher hydrodenitrogenation (HDN) activity than that supported on the untreated γ-Al₂O₃ in the temperature range of 300-340 °C.