二维平板光子晶体直波导的制备和光传输特性的测量

利用聚焦离子束刻蚀的方法在SOI(silicon on insulator)基片上制备了W3型二维光子晶体直波导.观察并测量了近红外激光通过光子晶体波导的散射图形和透过谱.实验结果说明，激光在有引入引出脊形波导的光子晶体直波导中具有很好的传输特性. 关键词： 光子晶体波导 光子带隙 脊型波导     

聚焦离子束研制半导体材料光子晶体

介绍了利用聚焦离子束设备在多种半导体材料上成功研制的近红外波段二维光子晶体，给出了相关微加工结果，发现微加工的尺寸和理论设计尺寸相吻合；测试了所加工的无源光子晶体光子带隙和有源光子晶体的发光谱. 实验证明聚焦离子束可以研制二维光子晶体及相关光子晶体器件. 关键词： 聚焦离子束 半导体材料 光子晶体     

部分空气桥式硅膜二维光子晶体

描述在Si基底上制备带隙在近红外波段部分空气桥式二维光子晶体（PC）.选用HF酸溶液作为腐蚀液，利用聚焦离子束刻蚀技术直接刻蚀出具有三角形空气洞结构的二维PC，并测出了二维PC完整的第一带隙透过谱的带隙范围为123—155μm.实验测得的透过谱与理论计算的空气桥式二维PC的计算结果一致.类TM0模的存在减小了带隙的宽度.由于部分SiO2支撑桥式平板，二维PC易于按所需尺寸进行制备.同时，通过改变平板下的支撑材料，可以制出有源的PC，利用这种机理可以把光从支撑材料中引出. 关键词： 二维光子晶体 带隙 平板波导     

基于缺陷光子晶体结构的GaN基发光二极管光提取效率的有关研究

现有的研究表明,利用光子晶体可以有效提高发光二极管的光提取效率.由于在制造时光子晶体中可能会存在缺陷和错位,本文基于时域有限差分法对光子晶体中的缺陷和错位对发光二极管发光效率的影响进行了研究.数值仿真结果表明,光子晶体中少量缺陷或者微小错位并不会降低发光二极管的光提取效率,其中某些缺陷反而能增强光子晶体发光二极管的光提取效率.本文对其物理机理给出了详细的理论分析,并设计了一种具有缺陷的光于晶体,在未刻蚀到有源层(离有源层20 nm)的情况下,其光提取效率达到了完美光子晶体的1.6倍.通过对这种缺陷光子晶体的空间频谱分析可知,可以通过设计具有特殊空间频谱分布的光子晶体来提高发光二极管的发光效率,这对设计高光提取效率的光子晶体结构和制造高效率的发光二极管有指导意义.     

二维光子晶体提高C波段LED出光效率的研究

片上集成光源是未来光电子系统中光源发展的主要趋势,LED光源作为片上集成光源的主要缺点是其出光效率低,二维光子晶体是提高LED出光效率的有效手段.本工作设计了C波段LED的基本结构及参数,并采用时域有限差分法计算了不同阵列不同占空比的二维光子晶体能带结构,利用禁带理论选取提高C波段LED出光效率的最优二维光子晶体结构参数,结果表明三角排列空气孔二维光子晶体晶格常数a=500 nm且占空比Rp=0.44的光子晶体结构最优.     

二维GaAs 基光子晶体微腔的制作与光谱特性分析

研究了以InAs量子点为有源区的二维GaAs基光子晶体微腔的设计与制作,测试并分析了室温下微腔的光谱特性.观察到了波长约为1137 nm,谱线半高宽度约为1 nm的尖锐低阶谐振模式发光峰.我们比较了不同刻蚀条件下光子晶体微腔的发光谱线,结果表明空气孔洞截面的垂直度是影响光子晶体微腔发光特性的重要因素之一.通过调节干法刻蚀工艺,改变空气孔半径与晶格常数的比率,可以在较大范围内调节谐振模式发光峰位置,达到谐振模式与量子点发光峰调谐的目的.     

利用二维光子晶体提高波的耦合效率

通过多重散射方法数值模拟研究和实验测量表明利用二维光子晶体可以提高波的耦合效率.研究发现,高的波耦合效率通常发生在光子禁带的边沿和其它非禁带区的某些频率处.当光子晶体的晶格常数接近于所传输的波的波长时,会出现很高耦合效率的共振耦合现象.利用二维光子晶体的情况下的波耦合效率最高可以达到不利用二维光子晶体时的1.89倍.这种现象在光集成器件中尤其有用.     

光子晶体发光二极管

利用光子晶体的光子禁带和光栅衍射效应可以提高LED的出光效率,扩大LED的应用范围。总结了光子晶体发光二极管的原理和典型器件。通过比较表明,与光子禁带效应相比,利用光栅衍射效应提高LED出光效率的方法更适用于电注入发光。因此可望用更廉价的方法在LED表面制造光子晶体,可通过光栅衍射效应来有效地提高其出光效率。     

纳米压印技术制备表面光子晶体LED的研究

利用表面光子晶体能大幅提高发光二极管(LED)的外量子效率, 但如何制备大面积的纳米光子晶体是该研究方向的主要难点之一. 本文基于纳米压印技术在氮化镓基发光二极管(GaN-LED)表面制作孔状二维光子晶体. 通过以金属和聚合物双层掩膜干法刻蚀法, 得到了很好的光子晶体图形转移效果. 最终在LED的p-GaN层表面获得了大面积光子晶体, 周期为450 nm, 纳米孔直径为240 nm. 器件测试结果显示, 有表面光子晶体的LED比没有光子晶体的LED, 光致发光强度峰值提高到了7.2倍.     

2.5D空间光滤波器设计与制备

纯相位迭代全息图可以用来设计空间光滤波器.由于介质与空气存在折射率差,空间光在经过全息干板时,会产生相位变化.文章以每个像素光刻胶的高度调制相位,设计出了 2.5D灰度全息空间光滤波器.文章还利用电子束光刻机进行灰度曝光,制备不同高度的光刻胶,通过干法刻蚀将图案刻蚀到硅片上.对电子束曝光工艺、显影参数、刻蚀工艺等进行了...     

FIB快速加工纳米孔点阵的新方法

纳米尺度的点阵在纳米器件和基础科学研究方面都具有非常重要的应用.目前普遍采用的聚焦离子束和电子束曝光技术可以很方便的在衬底上加工纳米量级的微细结构，但大面积的图形加工过程需要花费太多的机时.介绍一种利用设计图形BMP文件的像素点阵和实际加工区域之间的匹配关系，通过聚焦离子束加工获得所需要的纳米孔点阵的新方法.采用这种方法可以在短时间内获得大面积的纳米点阵结构. 关键词： 聚焦离子束 电子束曝光 纳米孔点阵     

Si-based two-dimensional photonic crystals coupled to one-dimensional Bragg mirrors

Planar two-dimensional photonic crystals can be combined with a one-dimensional Bragg mirror to control the quality factor and out-of-plane coupling of optical Bloch modes. We have investigated the optical properties of such structures fabricated on silicon. The photonic crystals are fabricated in the upper Si layer deposited on top of quarter-wave thick SiO₂-polycrystalline Si layers. The optical properties are probed by the room-temperature photoluminescence of Ge/Si self-assembled islands as an internal source. We show that an enhancement of the quality factor can be obtained by controlling the thickness of the silicon upper layer in which the two-dimensional photonic crystal is etched and by controlling the air filling factor of the photonic crystal. Quality factors of 2200 around 1100 nm are obtained by this method for defect-free photonic crystals with a square lattice pattern. The experimental results are supported by three-dimensional finite-difference time-domain (FDTD) calculations of the radiated modes for the investigated structures.     

A new fabrication technique for photonic crystals: Nanolithography combined with alternating-layer deposition

We propose two photonic crystal structures that can be created by combining nanolithography with alternating-layer deposition. Photonic band calculations suggest that a drilled alternating-layer photonic crystal combining two-dimensional (2D) alternating multilayers and an array of vertically drilled holes may achieve a full photonic bandgap. In addition, a 3D/2D/3D cross-dimensional photonic crystal, which sandwiches a 2D photonic crystal slab between three-dimensional (3D) alternating-layer photonic crystals, should provide better vertical confinement of light than a conventional index guiding slab. Fabrication techniques based on existing technologies (electron beam lithography, bias sputtering, and low-pressure ECR etching) require very few process steps. Our preliminary fabrication suggests that, by refining these technologies, we will be able to realize photonic crystals.     

Four-port coupled channel-guide device based on 2D photonic crystal structure

We have fabricated and measured a four-port coupled channel-waveguide device using W1 channel waveguides oriented along ΓK directions in a two-dimensional (2D) hole-based planar photonic crystal (PhC) based on silicon-on-insulator (SOI) waveguide material, at operation wavelengths around 1550 nm. 2D FDTD simulations and experimental results are shown and compared. The structure has been designed using a mode conversion approach, combined with coupled-mode concepts. The overall length of the photonic crystal structure is typically about 39 μm and the structure has been fabricated using a combination of direct-write electron-beam lithography (EBL) and dry-etch processing. Devices were measured using a tunable laser with end-fire coupling into the planar structure.     

Fabrication and measurement of optical characterization of one dimensional photonic crystal with defect

Numerical calculations based on the transfer matrix method are carried out, and the results of band gap with resonance peaks are obtained. The electron beam lithography technology （EBL） and induction coupling plasma （ICP） etching are used to make the photonic crystal （PC） structures, and from several scanning electron microscope images, the PC structures are observed with features closing to the design. In order to create the tiny PC structures in the right places of the waveguide by the EBL technology at different time, some alignment markers are deposited on the chip, which are made of gold that deposited on titanium for its good adhesion to the underlying Si. An optical testing bed is designed for measurement of the optical characterization of PC structures. Through the analysis of the measured data, a △λ value of 0.8 nm is obtained and for the centre frequency of 1547 nm, a very high quality factor value of 1933 can be obtained. The 3-rim difference represents only a 0.2% error from the theoretical centre.     

Optical characteristics of one-dimensional photonic crystals composed of high-aspect-ratio Si walls fabricated on V-grooved wafer

We demonstrate optical properties of one-dimensional photonic crystals (PC), which are fabricated using high-aspect-ratio etching on a V-grooved silicon wafer. The measured transmission spectrum has an obvious band gap; the suppression is over 30 dB. The quite small insertion loss of 1.9 dB is achieved by induced coupled plasma (ICP) cryogenic etching and direct coupling to the optical fiber aligned in the V-groove. We also successfully observed peaks originating from a localized cavity mode. Such a microcavity enables control of the light, which qualifies photonic crystal as a fundamental structure of optical functional devices. These results lead to achievement of integrated Si-based photonic circuits.     

用时域有限差分法研究二维光子晶体传输特性

将时域有限差分方法用于光子晶体传输特性理论研究，分别计算了二维方型光子晶体TM模和TE模的透射率频率分布；根据光子晶体的标度不变性特征，在微波频段制作了光子晶体，并设计了实验装置；实验结果与计算结果一致表明：对于一定的入射方向，某些频率的光不能在光子晶体中传播。     

液晶调制的光子晶体可控偏光片和光开关

与介质柱型光子晶体相比，空气孔光子晶体更易于制作和集成而更有应用价值.采用平面波展开法证实了填充液晶的二维三角形分布的空气孔光子晶体方向能隙的可调节性.数值模拟结果表明：1)通过外界电场控制空气孔中所填充的相列液晶的方向可以对光子晶体的方向能隙进行调节，这种可调节性可用于制作场敏偏光片.这与Liu等人研究介质柱型光子晶体的结论相类似；2)用phenylacetylene型液晶替代5CB液晶作为填充物质所得到的空气孔光子晶体偏光片可使用的频率范围显著增大.在此基础上，还研究了填充液晶的光子晶体波导传输谱线的可调节性对特定波长的光切断和开通控制的原理，实现了与以往光开关原理不同的光子晶体光开关. 关键词： 光子晶体 液晶 可调节性 平面波展开法 场敏偏光片     

Large-area metallic photonic crystal fabrication with interference lithography and dry etching

Large-area one-dimensional periodic metallic structures were fabricated on a waveguide layer with interference lithography and dry etching. As narrow as 115-nm gold nanowires were obtained with a period of 395 nm, covering a homogeneous area as large as 5 × 5 mm². Extinction measurements demonstrate the strong coupling between waveguide mode and gold-particle plasmon resonance. We demonstrate good agreement with a scattering-matrix theory. The dispersion of the metallic photonic crystals was obtained by angle-resolved measurements. This method represents a simple and low-cost way to fabricate large-area metallic photonic crystals.