Electronic and conformational properties of 2,3-benzodiazepine derivatives

Summary The molecular geometries and electronic structures of 2,3-benzodiazepine derivatives have been studied by means of the MNDO-PM3 method. A number of electronic properties have been computed and examined in order to find indication of the role of the electronic characteristics of the different molecules and their pharmacological properties. Theoretical data indicate that both electronic and structural properties appear responsible for the varying degree of anticonvulsant activity exhibited by compounds 1–4.     

Structural and electronic properties of Bin (n = 2-14) clusters from density-functional calculations

The structural and electronic properties of Bi_n (n = 2-14) clusters have been systematically studied using gradient-corrected density-functional theory. For each cluster size, a number of structural isomers were constructed and optimized to search for the lowest-energy structure. The competition of several structural patterns such as cages, superclusters, and layered structures leads to the alternating appearance of these configurations as global minima. Although the tendency of Bi to form puckered-layer structures is already well-known, the electronic states of Bi_n clusters are still far from that of the bulk. As well, a remarkable even-odd atom number oscillation is observed in the structural and electronic properties of the clusters, implying that the stability of Bi_n clusters is mainly dominated by the electron shell effect rather than by geometrical packing. The theoretically calculated values for electron affinities agree well with available experimental data.     

Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate

The electronic and the structural properties of n-GaAs layers grown on rough surface of silicon substrate by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL), time resolved photoluminescence (TRPL) and high resolution X-ray diffraction (HRXRD). The relationship between electronic and structural properties of the n-GaAs layer was checked, showing that the defect density is a strong cause for trapping the minority carriers. The impact of introducing intermediate rough silicon layer between silicon substrate and n-GaAs layer on the electronic properties was observed, showing that the structure grown on rough Si involves higher lifetime than those developed on flat silicon substrate. Such structure could be used for economic solar cells fabrication.     

Structural,elastic, electronic,optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr,Ba)

First-principles calculations were performed to investigate the structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae₃AlAs₃ (Ae = Sr, Ba) using two complementary approaches based on density functional theory. The pseudopotential plane-wave method was used to explore the structural and elastic properties whereas the full-potential linearised augmented plane wave approach was used to study the structural, electronic, optical and thermoelectric properties. The calculated structural parameters are in good consistency with the corresponding measured ones. The single-crystal and polycrystalline elastic constants and related properties were examined in details. The electronic properties, including energy band dispersions, density of states and charge-carrier effective masses, were computed using Tran-Blaha modified Becke-Johnson functional for the exchange-correlation potential. It is found that both studied compounds are direct band gap semiconductors. Frequency-dependence of the linear optical functions were predicted for a wide photon energy range up to 15 eV. Charge carrier concentration and temperature dependences of the basic parameters of the thermoelectric properties were explored using the semi-classical Boltzmann transport model. Our calculations unveil that the studied compounds are characterised by a high thermopower for both carriers, especially the p-type conduction is more favourable.     

Structural stability, phase transformations and band-tuning of actinide and rare earth based intermetallics under high pressure: a perspective

When a solid is subjected to external pressure, it can undergo either structural transformation or remain stable in its parent structure. The sequence of structural transformations, when mapped for similar materials, viz., isostructural, isoelectronic and so on, can be used to create a map showing the evolution of structures under pressure for such materials. Such maps are useful in predicting high pressure phases. The structural transitions and the stability of materials as a function of pressure are intricately connected to their electronic structure. Many a times it is advantageous to know the stability of the material under pressure just by calculating its electronic structure. This can be accomplished only if several homologues materials are studied and the stability criteria arrived at by correlating their electronic structure with their structural stability under pressure. Further, as a function of pressure, the electronic structure changes can lead to enhancement in certain desired electronic, physical or mechanical properties. Several examples are known, wherein, pressure tuning of the band structure leads to improved properties. In this paper, we have discussed the above mentioned areas and presented a perspective of the above using the results of our own studies on f-electron based intermetallics (f-IMCs).     

Adhesion of niobium films to differently oriented α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> surfaces

The atomic and electronic structures of the Nb/α-Al₂O₃ interface are studied by the electron density functional method. The structural and electronic properties of three corundum surfaces, as well as chemical bonds produced by metallic niobium films at variously oriented interfaces, are discussed. Relations between the electronic structure, geometry, and mechanical properties of the interfaces are analyzed. It is shown that the adhesion of niobium films to a great extent depends on the type of oxide surface.     

Effect of Zn doping on electronic structure and optical properties zincblende GaN(A DFT+U insight)

The development of new materials,having exceptional properties in comparison to existing materials is highly required for bringing advancement in electronic and optoelectronic technologies.Keeping this fact,we investigated structural,electronic,and optical properties of zincblende GaN doped with selected Zn concentrations(6.25%,12.50%,and 18.70%),using the first-principle calculations based on density functional theory with GGA+U.We conducted the entire study using the WIEN2K code.In this study,we calculated various significant parametric quantities such as cohesive energies,formation energies,bulk moduli,and lattice constants along with the study of optical and electronic properties by substituting Ga atoms with Zn atoms in 1×2×2 supercell.The structural stability is confirmed by studying the phonon dispersion curves which suggest that Zn:GaN material is stable against the 6.25%and 18.70%Zn concentrations while for 12.50%,it shows instability.The Hubbard values U=0,2,4,6 eV were added to GGA and the electronic properties were improved with the U=6 eV.Optical absorption was blue shifted while the refractive index and dielectric constant were increased with increasing the Zn concentrations.Electronic properties are enhanced due to the prime contribution of cations(Zn)3ri states.The optical and electronic properties are further discussed in detail in the entire study.     

Theoretical investigation on first-principles electronic and thermal properties of some CdRE intermetallics

Ab initio calculation on B2-cadmium rare earth (RE), CdRE (RE=La, Ce and Pr) intermetallics has been performed at T=0 K with respect to their structural, electronic and thermal properties. The structural and electronic properties are derived using self-consistent tight binding linear muffin tin orbital method at ambient and at high pressure. Other properties like lattice parameter, bulk modulus, density of states, electronic specific heat coefficient, cohesive energy, heat of formation, Debye temperature and Grüneisen constant for CdRE are also estimated. The RE-f effect can be seen in CdPr in terms of variation in the density of states and opens a possibility of structural instability. A pressure induced variation of Debye temperature is also presented for three cadmium rare earth intermetallics.     

Elucidating DFT study on structural,electronic, thermal and elastic properties of SrTcO3 by using GGA and mBJ approach

Generalized gradient approximation and Modified Becke and Johnson (mBJ) potential scheme, within density functional theory, has been implemented to evaluate the structural, electronic and thermo-elastic attributes of SrTcO₃. The structural stability of the very compound has been probed from tolerance factor, elastic stability criterion and ground state optimizations. In the study of electronic properties, formation of band-gap has been resolved by using density of states and from electron spin density contour plots. It is for the first time that mechanical and thermo-dynamical properties have been studied in terms of elastic constants, melting temperature, enthalpy of formation and Debye temperature. Our results have shown that SrTcO₃ exhibit a stable ductile nature that makes it a convincing candidate for high temperature electronic applications.     

First principles study of structural,magnetic and electronic properties of CrAs

Abstract

We report ab initio density functional calculations of the structural and magnetic properties, and the electronic structure of CrAs. To simulate the observed pressure-driven experimental results, we perform our analysis for different volumes of the unit cell, showing that the structural, magnetic and electronic properties strongly depend on the size of the cell. We find that the calculated quantities are in good agreement with the experimental data, and we review our results in terms of the observed superconductivity.     

First-principle study of the structural,electronic, and thermodynamic properties of cuprous oxide under pressure

Cuprous oxide is selected as a promising material for photovoltaic applications. Density functional theory is used to study the structural, electronic, and thermodynamic properties of cuprous oxide by using the local density approximation and generalized-gradient approximation. The effect of pressure on the structural and electronic properties of Cu₂O is investigated. This study confirms and characterizes the existence of new phases. Hexagonal and tetragonal phases are not completely indentified. We focus on the phase transition of the cuprous oxide under hydrostatic pressure to tetragonal and hexagonal (CdI₂) structures. Variation of enthalpy with pressure is used to calculate the pressure of the phase transition.     

Structural and electronic properties of the Ti/W(1 1 1) adsorption system

We present theoretical and experimental study of the structural and electronic properties of the Ti/W(1 1 1) adsorption system. Atomic arrangements of the considered surfaces and their electronic structures have been obtained from first-principles pseudopotential calculations based on the density functional theory in a plane-wave-basis implementation. The corresponding experimental data have been provided by photofield emission spectroscopy. Investigations of the clean and Ti-covered W(1 1 1) surfaces indicate substantial structural relaxations deep into the substrate, and a noticeable modification of the surface electronic properties of the system induced already by a thin film of titanium. Configuration with adatoms positioned in substrate-lattice-continuation (i.e., deep-hollow) sites is found to be energetically most favorable. A good agreement between the measured photofield emission spectra and the computed local-density-of-states distributions confirms our theoretical predictions for a clean W(1 1 1) substrate as well as Ti coverages of 0.25 and 1 ML.     

Electronic and structural properties of black phosphorene doped with Si,B and N

The electronic and structural properties of substitutional and doped phosphorene with B, N and Si were studied using first principles calculations based on density functional theory. Moreover, electronic and structural properties of functionalized phosphorene slowly increasing the concentration of doping was investigated. Phosphorene strongly binds with doped functionalization; B doped phosphorene is the most stable configuration studied. Si doped phosphorene maintains the semiconductor characteristic. B and N doped phosphorene present n-type and p-type semiconductors, respectively. Doped phosphorene with odd number of Si is a semiconductor material, doped phosphorene with an odd number of B has n-type semiconductor characteristic, and doped phosphorene with odd number of N atoms has a p-type semiconductor behaviour. Doped phosphorene with even number of Si has a metallic characteristic, while B and N doped phosphorene with even number present a semiconductor behaviour. This work reveals that phosphorene electronic properties could be changed by introducing the dopants on the system, and the properties are affected by the increasing number of dopants on phosphorene sheet.     

Ab initio investigation of the structural and unusual electronic properties of α-CuSe （klockmannite）

In this article, a computational analysis has been performed on the structural properties and predominantly on the electronic properties of the α-CuSe （klockmannite） using density functional theory. The studies in this work show that the best structural results, in comparison to the experimental values, belong to the PBEsol-GGA and WC-GGA functionals. However, the best results for the bulk modulus and density of states （DOSs） are related to the local density approximation （LDA） functional. Through utilized approaches, the LDA is chosen to investigate the electronic structure. The results of the electronic properties and geometric optimization of α-CuSe respectively show that this compound is conductive and non-magnetic. The curvatures of the energy bands crossing the Fermi level explicitly reveal that major charge carriers in CuSe are holes, whose density is estimated to be 0.86×1022 hole/cm3. In particular, the Fermi surfaces in the first Brillouin zone demonstrate interplane conductivity between （001） planes. Moreover, the charge carriers among them are electrons and holes simultaneously. The conductivity in CuSe is mainly due to the hybridization between the d orbitals of Cu atoms and the p orbitals of Se atoms. The former orbitals have the dual nature of localization and itinerancy.     

Novel two-dimensional PdSe phase: A puckered material with excellent electronic and optical properties

By combining structural search and first-principles calculations, we predict a new stable two-dimensional PdSe monolayer, and systematically investigate its structural, electronic and optical properties. The calculated formation enthalpy, phonon spectra and molecular dynamic simulations confirm that PdSe monolayer possesses excellent thermodynamic and dynamic stability. PdSe monolayer is a semiconductor with an indirect band gap of ∼ 1.10 eV. The carrier transport of PdSe monolayer is dominated by hole and exhibits remarkable anisotropy due to the intrinsic structure anisotropy. The optical properties also show obvious anisotropic characteristic with considerable absorption coefficient and broad absorption from the visible to ultraviolet regions. Benefiting from these excellent physical properties, PdSe monolayer is expected to be a promising candidate as electronic and optoelectronic devices.     

Near-surface structural study of transition metal oxides to understand their electronic properties

The atomic arrangement in a solid contains a great amount of information, and observation of its structure is essential for understanding the electronic and magnetic properties of transition metal oxides at a microscopic level. Increasing interest in the surfaces and interfaces of oxide systems, which is partly driven by the anticipation of device applications, enhances the importance of structural studies of the near-surface region. We review various types of structural studies with x-ray scattering on the near-surface region of metal oxides-from thick films to surfaces-in order to clarify the structural effects on their electronic properties.     

Electronic and optical properties of Si and Ge nanocrystals: An ab initio study

First-principles calculations within density functional theory and many-body perturbation theory have been carried out in order to investigate the structural, electronic and optical properties of undoped and doped silicon nanostructures. We consider Si nanoclusters co-doped with B and P. We find that the electronic band gap is reduced with respect to that of the undoped crystals, suggesting the possibility of impurity based engineering of electronic and optical properties of Si nanocrystals. Finally, motivated by recent suggestions concerning the chance of exploiting Ge dots for photovoltaic nanodevices, we present calculations of the electronic and optical properties of a Ge₃₅H₃₆ nanocrystal, and compare the results with those for the corresponding Si₃₅H₃₆ nanocrystals and the co-doped Si₃₃BPH₃₆.     

Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure

We present an sp ³ tight-binding model for the calculation of the electronic and optical properties of wurtzite semiconductor quantum dots (QDs). The tight-binding model takes into account strain, piezoelectricity, spin-orbit coupling and crystal-field splitting. Excitonic absorption spectra are calculated using the configuration interaction scheme. We study the electronic and optical properties of InN/GaN QDs and their dependence on structural properties, crystal-field splitting, and spin-orbit coupling.     

高压下RhB的相变、弹性性质、电子结构及硬度的第一性原理计算

采用密度泛函理论中的赝势平面波方法系统地研究了高压下RhB的结构相变、弹性性质、电子结构和硬度.分析表明,RhB在25.3 GPa时从anti-NiAs结构相变到FeB结构,这两种结构的弹性常数、体弹模量、剪切模量、杨氏模量和弹性各向异性因子的外压力效应明显.电子态密度的计算结果显示,这两种结构是金属性的,且费米能级附近的峰随着压强的增大向两侧移动,赝能隙变宽,轨道杂化增强,共价性增强,非局域化更加明显.此外,硬度计算结果显示,anti-NiAs-RhB的金属性比较弱,有着较高的硬度,属于硬质材料.     

Structural,elastic, electronic,andoptical properties of layered TiNX (X = F,Cl, Br,I) compounds: a density functional theory study

ABSTRACT

Titanium nitride halides, TiNX (X = F, Cl, Br, I) in the α-phase (orthorhombic) are exciting quasi two-dimensional (2D) electronic systems exhibiting a fascinating series of electronic ground states. Pristine TiNX are semiconductors with varying energy gaps and possess attractive properties for potential applications in optoelectronics, photovoltaics, and thermoelectrics. Alkali metal intercalated TiNCl becomes superconducting at reasonably high temperature. We have revisited the electronic band structure of TiNX using density functional theory (DFT) based calculations. The atomic orbital resolved partial electronic energy densities of states are calculated together with the total density of states (TDOS). The structural and elastic properties have been investigated in details for the first time. The elastic anisotropy has been explored. The optical properties of TiNX are studied for the first time. The Debye temperatures have been calculated and the related thermal and phonon parameters are discussed. The calculated physical parameters are compared with existing theoretical and experimental results and showed fair agreement. TiNX are found to reflect electromagnetic radiation strongly in the mid ultraviolet region. The elastic properties show high degree of anisotropy. The effect of halogen atoms on various structural, elastic, electronic, and thermal properties in TiNX are also discussed in detail.