硫酸锂钾的室温相和低温相的锂离子位置

核磁共振实验表明,LiKSO₄在T_c=195K发生结构相变。本文报道了温度低于T_c时,Li位电场梯度张量的温度依赖关系。结合理想离子晶体模型,讨论了该晶体的结构,指出室温相Li的位置并不像Bradley所推测的,在(2/3,1/3,0.849)的位置,而应在(2/3,1/3,0.706)的位置;195K的相变是由于Li离子的位移造成;低温相的空间群可能为R3。 关键词：     

超巨磁电阻材料Pr2/3Sr1/3MnO3薄膜输运性质的研究

对1/f噪声缺口的超巨磁电阻Pr_2/3Sr_1/3MnO₃薄膜样品从10K到室温的热电势值进行了测量，热电势为负值，低温下随温度线性变化，表现为金属扩散热电势，在150K开始急剧减小，过渡到与温度T成反比的变化关系，与小极化子模型相符.结合在电阻极大温度附近对电阻和1/f噪声行为的讨论，对于发生在电阻极大温度附近的相变过程，结果支持源于相分离的渝渗模型. 关键词： 稀土锰氧化物 热电势 渝渗模型     

哈斯勒合金Ni50Mn35In15的马氏体相变及其磁热效应

利用电弧炉熔炼了Ni₅₀Mn₃₅In₁₅多晶样品,根据磁性测量对其马氏体相变和磁热效应进行了系统研究.结果表明,随着温度的降低,样品在室温附近先后发生了二级磁相变与一级结构相变特征的马氏体相变,导致它的磁化强度产生突变. 同时通过低温下的磁滞回线的测量发现样品存在交换偏置行为,表明低温下马氏体相中铁磁和反铁磁共存. 此外,根据Maxwell方程,计算了样品在马氏体相变温度附近的磁熵变,当温度为309K,磁场改变5 T时,样品的磁熵变可达22.3J/kgK. 关键词： 哈斯勒合金 50Mn₃₅In₁₅')" href="#">Ni₅₀Mn₃₅In₁₅ 马氏体相变 磁热效应     

钨青铜型结构铁电体的低温扩散相转变

对六种钨青铜结构的铌酸盐铁电晶体进行了从15K到室温范围的介电特性及热电特性的研究。分析其介电特性和热电特性与极化电场的关系,用X射线粉末衍射进行佐证。证实在50—70K的范围内,SBN,PBN,KNSBN三类铁电钨青铜型铌酸盐晶体均存在着一个新的相变。相变是由点群4mm铁电相到点群mm²铁电相的转变。铁电自发极化方向由四方晶胞的e轴方向转变到正交晶胞的b轴方向。介电特性的高频及低频测量表明该相变具有扩散(或称瀰散)型特征。比热的实验结果证明相变是属于高于一阶相变的高阶相变。对相变前 关键词：     

K3C60在200K附近的取向相变机理

研究了K₃C₆₀单晶薄膜在200K附近的导带结构.样品温度为190K时,同步辐射角分辨光电子谱能够观察到[111]方向有规律的能带色散.而在220K附近色散不存在.这一实验结果与K₃C₆₀在200K存在取向相变相符合.用反铁磁Ising模型对实验结果进行了分析.结果表明,K₃C₆₀在200K的相变是由低温下的一维无序取向结构转变为200K以上的双取向结构畴与无序分子(约占40 关键词： 3C₆₀')" href="#">K₃C₆₀ 取向相变机理     

高压下LiKSO4介电和弹性特性的反常及p—T相图

本文通过对不同温度T(150—350K)和压力p(0—10kbar)范围内LiKSO₄晶体介电和弹性性质的研究,发现在室温8.2kbar(对应于升压过程),和4kbar(对应于降压过程)附近介电和弹性系数有突变。我们把它归结为压力诱导的LiKSO₄相转变。这个相变过程伴随着很大的压力滞后现象。本文还给出了LiKSO₄在上述温度和压力范围内的p-T相图。并发现在3.8kbar和281K处存在一个三相点。 关键词：     

VO2金属-绝缘体相变机理的研究进展

VO₂是一种热致相变金属氧化物. 在341 K附近, VO₂发生由低温绝缘体相到高温金属相的可逆转变, 同时伴随着光学、电学和磁学等性质的可逆突变, 这种独特的性质使得VO₂在光电开关材料、智能玻璃、存储介质材料等领域有着广阔的应用前景. 因此, VO₂金属-绝缘体可逆相变一直是人们的研究热点, 但其相变机理至今未有定论. 首先, 简要概述了VO₂相变时晶体结构和能带结构的变化情况: 从晶体结构来讲, 相变前后VO₂从低温时的单斜相VO₂(M)转变为高温稳定的金红石相VO₂(R), 在一定条件下此过程也可能伴随着亚稳态单斜相VO₂(B)与四方相VO₂(A)的产生; 从能带结构来看, VO₂处于低温单斜相时, 其d_//能带和π^*能带之间存在一个禁带, 带宽约为0.7 eV, 费米能级恰好落在禁带之间, 表现出绝缘性, 而在高温金红石相时, 其费米能级落在π^*能带与d_//能带之间的重叠部分, 因此表现出金属导电性. 其次, 着重总结了VO₂相变物理机理的研究现状. 主要包括: 电子关联驱动相变、结构驱动相变以及电子关联和结构共同驱动相变的3种理论体系以及支撑这些理论体系的实验结果. 文献报道争论的焦点在于, VO₂是否是Mott绝缘体以及结构相变与MIT相变是否精确同时发生. 最后, 展望了VO₂材料研究的发展方向.     

112型铁基化合物EuFeAs2的单晶生长与表征

铁基超导体中含有一类特殊的112型结构化合物,其层状结构中含有一层锯齿形的As链构型.本文报道了用CsCl助熔剂法生长新型铁基112型EuFeAs₂母体单晶的具体方法,以及对该单晶的结构和物性的详细表征.通过能量色散X射线能谱扫描对单晶样品进行的化学成分分析,以及单晶X射线衍射的结构解析,确定该单晶样品属于EuFeAs₂相,结构精修得到EuFeAs₂具有空间群为Imm2（No.44）的正交晶体结构,晶格常数分别是a=21.285（9）Å,b=3.9082（10）Å,c=3.9752（9）Å.通过低温电阻测量,发现在110 K附近和46 K附近存在两个异常电阻跳变.进一步分析表明,110 K附近存在两个邻近的相变,这两个相变与铁基母体材料中常见的结构相变和Fe²⁺的反铁磁相变相符合.结合磁化率测量分析,可知46 K附近的相变属于Eu²⁺的反铁磁相变.     

超巨磁电阻材料Pr2/3Sr1/3MnO3薄膜输运性质的研究

对1/f噪声缺口的超巨磁电阻Pr2/3Sr1/3MnO3薄膜样品从10K到室温的热电势值进行了测量,热电势为负值,低温下随温度线性变化,表现为金属扩散热电势,在150K开始急剧减小,过渡到与温度T成反比的变化关系,与小极化子模型相符.结合在电阻极大温度附近对电阻和1/f噪声行为的讨论,对于发生在电阻极大温度附近的相变过程,结果支持源于相分离的渝渗模型.     

电子型超导体Sm1.85Ce0.15CuO4单晶的赝能隙行为研究

测量了在O2中退火不同时间的Sm1.85Ce0.15CuO4单晶样品的热电势S与电阻率ρ的温度依赖关系.所有的样品电阻率高温下呈现线性温度依赖行为.未退火的样品在148K发生超导转变,而退火后的样品在低温下发生金属半导体相变,其超导电性消失,表明退火引起了载流子浓度下降,体系进入欠掺杂态.随着温度降低,所有的样品ST和ρT曲线在200K附近(T)都发生斜率的改变,可以用赝能隙现象解释.热电势S在低温下出现一个正的曳引峰,意味着载流子符号发生改变,由电子型转变为空穴型 关键词： 电子型超导体 热电势 赝能隙     

Chromium-and manganese-doped TlInS<Subscript>2</Subscript>—A new relaxor ferroelectric

The dielectric, pyroelectric, and polarization properties of TlInS₂ crystals doped with 0.1 mol % Cr and Mn are investigated. It is shown that TlInS₂ compounds doped with chromium and manganese can be assigned to the class of relaxor ferroelectric materials. The temperature range of existence of the stable relaxor (nanodomain) state and the temperature of the phase transition from this state to the ferroelectric (macrodomain) state are determined. The temperature dependence of the pyroelectric current is characterized by an anomaly in the range of the phase transition.     

钨青铜型结构铁电体的低温扩散相转变

对六种钨青铜结构的铌酸盐铁电晶体进行了从15 K 到室温范围的介电特性及热电特性的研究. 分析其介电特性和热电特性与极化电场的关系, 用x 射线粉末衍射进行佐证. 证实在50 一70 K 的范围内, SBN , PBN , KNSBN 三类铁电钨青铜铌酸盐晶体均存在着一个新的相变. 相变是由点群4mm铁电相到点群mm2 铁电相的转变. 铁电自发极化方向由四方晶胞的c轴方向转变到正交晶胞的b 轴方向.介电特性的高频及低频测量表明该相变具有扩散(或称弥散)型特征. 比热的实验结果证明相变是属于高于一阶相变的高阶相变. 对相变前后的晶胞结构提出了一个模型解释. 关键词：     

Magnetic-field-induced phase transition in Tb0.95Bi0.05MnO3+δ multiferroic

The effect of a magnetic field on the dielectric properties of Tb_0.95Bi_0.05MnO_3+δ single crystals has been analyzed. It has been shown that the state of the crystal for temperatures of 5–440 K is inhomogeneous and restricted domains of polar and spin correlations are exhibited in it. A phase transition in which the inhomogeneous state of the crystal changes substantially has been observed at a temperature of T ? 180 and 225 K (in the absence and presence of a magnetic field, respectively). The high-temperature phase contains large dielectric domains with a high dielectric constant (ε ～ 10⁵) and thin conducting layers at the boundaries of these domains. The magnetic field significantly affects the state of both low-and high-temperature phases of the crystal, shifting the temperature of the phase transition between them, and induces an additional phase transition at T ? 441 K.     

Cs3BiCl6 : Un compose ferroelastique presentant une polarisation remanente a temperature ambiante

X-ray diffraction, calorimetric, dielectric and thermocurrent measurements have been carried out on Cs₃BiCl₆ ceramic samples. Three phase transitions have been detected at T₁ = 395 K, T₂ = 684 K and T₃ = 727 K. The T₃ transition is of ferroelastic-paraelastic type. The low temperature phase is characterized by remanent polarization. The depolarization current results probably from charge traps in potential minima which disappear at rising temperature.     

Dielectric properties of deuterated ammonium Rochelle salt

The dielectric constant of deuterated ammonium Rochelle salt along the three crystallographic axes as well as the pyroelectric charge density developed on the crystal surface perpendicularly to the b-axis have been measured with a high temperature resolution. The para- to ferroelectric transition at T_c = ?159°C shows a thermal hysteresis of ΔT = 0.15°C. This and the discontinuities in the dielectric constant along all three axes show that the phase transition is of the first-order. No phase intermediate between the para- and the ferroelectric phases could be detected.     

Structural and dielectric properties of Pb5(Ge,Si)O11

The ferroelectric lead germanate (Pb₅Ge₃O₁₁) and its isomorphous compounds are important because of their uses as pyroelectric and electro-optic devices. Comparison of inter-planar d-spacings of Pb₅Ge_3−x Si _x O₁₁ (x=0, 0.3, 0.7 and 1.00) suggests that there is no change in basic structure of Pb₅Ge_3−x Si _x O₁₁ when Si is substituted for Ge in small quantity (x<1). The dielectric properties of the Si-substituted compounds have been studied as a function of temperature (30 to 200°C). The ferroelectric-paraelectric phase transition has been observed at 185°C. The Si doping causes (a) Curie point to shift towards low temperature, (b) peak value of the dielectric constant to decrease and (c) phase transition diffuse. The fast increase in dielectric constant of pure Pb₅Ge₃O₁₁ with temperature (beyond transition temperature) may be attributed to the development of space charge polarization in the system.     

Lead-free ferroelectric thin films obtained by pulsed laser deposition

Na_0.5Bi_0.5TiO₃-BaTiO₃ (NBT-BT) thin films grown by pulsed laser deposition have been investigated by X-ray diffraction, scanning electron microscopy, and dielectric spectroscopy in order to clarify the role of substrate temperature on crystalline structure, grain morphology, and dielectric properties. We have shown that the structural and dielectric properties of NBT-BT thin films with composition at morphotropic phase boundary (6% BT) critically depend on the substrate temperature: small variations of this parameter induce structural changes, shifting the morphotropic phase boundary toward tetragonal or rhombohedral side. Higher deposition temperature (1000 K) favor the formation of rhombohedral phase, films deposited at 923 K and 973 K have tetragonal symmetry at room temperature. Grains morphology depends also on the deposition temperature. Atomic force micrographs show grains with square or rectangular shape in a compact structure for films grown at lower temperatures, while grains with triangular shape in a porous structure are observed for films grown at 1000 K. Dielectric spectroscopy measurements evidenced the phase transition between ferroelectric and antiferroelectric phase at 370 K. Films grown at 1000 K shown low electrical resistivity due to their porous structure. High dielectric constant values (about 800 at room temperature and 2700 at 570 K) have been obtained for films grown at temperatures up to 973 K.     

Large pyroelectric response in (Pb0.87La0.02Ba0.1)(Zr0.7Sn0.3−x Ti x )O3 antiferroelectric ceramics under DC bias field

(Pb_0.87La_0.02Ba_0.1)(Zr_0.7Sn_0.3−x Ti _x )O₃ (PLBZST, 0.06≤x≤0.09) antiferroelectric ceramics were fabricated by conventional solid state reaction process, and their ferroelectric, dielectric, and pyroelectric properties were systemically investigated. PLBZST with different Ti content were all confirmed to be in an antiferroelectric phase at T=50°C, which is close to the lowest phase transition temperature. Compared with conventional FE ceramics, PLBZST antiferroelectric ceramics exhibited higher electric field induced pyroelectric coefficient (p). As the content of Ti increased from 0.06 to 0.09, the pyroelectric coefficient increased from 1000 to 6500 μC/m²K under a 500 V/mm DC bias field. The maximum pyroelectric coefficient of 8400 μC/m²K was obtained at x=0.09 when an 850 V/mm DC bias field was applied, which is far larger than that of conventional phase transition pyroelectric materials. Large pyroelectric response is beneficial for the development of infrared detectors and thermal imaging sensors.     

Pb(Zr,Sn,Ti)O3反铁电陶瓷的低温相变扩散与极化弛豫

用弱场介电温谱、热释电流谱、强场电滞回线和变温X射线衍射谱研究了微量La掺杂Pb(Zr,Sn,Ti)O₃(PZST)反铁电(AFEt)陶瓷在-100—180℃温区内的结构与电学特性.弱场介电温谱显示,AFEt陶瓷在低温段(-100—50℃)呈现介电频率弥散(0.1—100kHz)和扩散型相变的特征,而变温X射线衍射谱却表明材料在这一温区内保持四方相结构;低温下经强场作用后,AFEt被诱导为亚稳三方铁电态,介电频率弥散消失.基于多元复杂化合物的组分起伏理论,讨论了PZST AFEt陶瓷 关键词： Pb(Zr Sn 3反铁电陶瓷')" href="#">Ti)O₃反铁电陶瓷 反铁电弛豫 相变 变温X射线衍射