ZnO纳米棒的制备及紫外探测性能

通过水热法在ITO衬底上成功合成了ZnO纳米棒,并以ITO为电极制备了ZnO纳米棒紫外探测器件。在室温下测试了所制备器件对紫外光的响应性能。测试结果表明,ZnO纳米棒对紫外光有很好的光响应,在0V附近,ZnO纳米棒紫外探测器的灵敏度能达到1500。此外,通过循环测试可以观测到ZnO纳米棒紫外探测器具有良好的重复性和稳定性。     

金纳米颗粒等离激元对不同形貌氧化锌薄膜发光性能的调控

采用化学气相沉积法制备了纳米棒状的氧化锌纳米结构薄膜和没有纳米棒的氧化锌薄膜,通过直流溅射在所制备的有纳米棒和没有纳米棒的氧化锌薄膜上淀积约3 nm厚的金纳米颗粒薄膜,研究了金纳米颗粒对不同表面形貌氧化锌薄膜的发光特性的影响。实验发现金纳米颗粒的存在使具有纳米棒的氧化锌薄膜的紫外发射增强,但使来自缺陷的可见光发射受到很大的抑制。通过比较有纳米棒和没有纳米棒的氧化锌薄膜在镀金纳米颗粒前后的发光特性,发现金表面等离激元对氧化锌发光的调控取决于氧化锌的表面形貌,纳米棒的存在更有利于金纳米颗粒等离激元调控氧化锌的发光特性。     

ZnO纳米棒/CdS量子点的制备及紫外-可见探测性能研究

本文采用水热法在ITO衬底上制备了ZnO纳米棒阵列,然后用化学水浴沉积法在纳米棒上制备CdS量子点。分别利用SEM和XRD对样品形貌和晶体结构进行表征。结果表明,球状的CdS量子点均匀地包覆在ZnO纳米棒表面,且结晶质量较好。基于ZnO纳米棒和ZnO纳米棒/CdS量子点制备的探测器对紫外光都具有很好的响应,然而与ZnO纳米棒探测器相比,ZnO纳米棒/CdS量子点探测器在相同条件下的光电流提高了7倍,为0. 52 mA。此外,ZnO纳米棒/CdS量子点探测器对绿光和蓝光也表现出了很好的响应。     

自供能TiO2纳米管紫外探测器的制备与性能研究

采用液相沉积法在ITO衬底上以ZnO纳米棒阵列为模板合成了TiO₂纳米管阵列，并采用SEM、XRD对样品的形貌、结构等进行表征。在此基础上，以空白ITO导电玻璃为对电极制备了光电化学型紫外探测器，并对其光响应特性进行测试。实验结果表明，制得的TiO₂纳米管轻微弯曲，由单一稳定的锐钛矿相组成。制得的自供能TiO₂纳米管紫外探测器对300~400 nm紫外波段非常敏感而对可见光区无响应。在无外加偏压的条件下，TiO₂纳米管紫外探测器能够对紫外光实现探测，表现出自供能特性并且具有较高的光敏性。循环测试结果表明，制得的自供能TiO₂纳米管紫外探测器能够循环工作且性能稳定，上升时间和下降时间分别为0.33 s和0.38 s。     

Ag修饰TiO2纳米管紫外探测器的构筑及性能研究

以液相沉积法在FTO衬底上制备了TiO_2纳米管阵列,在室温下利用光沉积法在TiO_2纳米管表面修饰金属纳米Ag颗粒,并采用SEM、EDS、XRD对样品的形貌、成分、结构等进行表征.实验结果表明,制备的TiO_2纳米管分布均匀,由锐钛矿相组成,并在管壁有明显的纳米Ag颗粒附着.以Pt为对电极制备了Ag/TiO_2纳米管紫外探测器,光响应测试结果表明,Ag/TiO_2纳米管紫外探测器具有可见光盲特性,可以实现对紫外光的探测.与TiO_2纳米管紫外探测器相比,Ag修饰TiO_2纳米管紫外探测器光电流密度提高至91μA/cm2,开关比可达2 251,紫外探测性能显著提高.     

ZnO纳米墙的电化学沉积法制备及紫外探测性能分析

以硝酸锌水溶液作为电沉积液,采用电化学沉积法制备了氧化锌(ZnO)纳米墙,研究了沉积电压对其表面形貌、晶体结构、拉曼光谱、光致发光谱、透过率以及紫外探测性能的影响。实验结果表明,该方法制备的ZnO纳米墙的均匀性较好,具有纤锌矿结构,沿(002)晶面择优生长,有较明显的E_2(high)模峰,在394 nm处有较强烈的紫外激发峰。紫外探测实验表明:在紫外光照射下,ZnO纳米墙的光电流迅速达到饱和,当沉积电压为1.6 V时,ZnO纳米墙的光电流值最大,对应的响应时间和恢复时间分别为1.36 s和2.23 s;当测试偏压为5 V时,光暗电流比为38.96,光电响应度为0.611 A/W。     

Cu2O-ZnO异质结太阳能电池的制备及光电性能研究（英文）

电化学沉积是一种绿色高效的材料制备方法。本实验使用电化学沉积法分别制备了单晶的氧化锌(ZnO)纳米棒阵列和p型的氧化亚铜(Cu2O)薄膜,并对样品进行了扫描电镜、X光衍射、外量子效率和光电性能测试等一系列的表征和测试。试验结果表明,通过改变反应溶液中的ZnCl2浓度可以来调控ZnO纳米棒的直径。光电性能测量显示在Cu2O/ZnO间形成了p-n异质结。量子效率的测试证明该异质结可有效地促进载流子的分离和传送,从而提高太阳能电池的转化效率。     

不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升

在r面蓝宝石衬底上，采用金属有机化学气相沉积（MOCVD）法高温生长了未掺杂非极性AlGaN半导体薄膜，在此基础上制备了金属-半导体-金属（MSM）结构的紫外探测器。系统研究了在AlGaN半导体薄膜表面分别磁控溅射SiO₂纳米颗粒与SiO₂钝化层两种钝化手段对非极性AlGaN-MSM结构的紫外探测器性能的影响。实验结果表明：磁控溅射SiO₂纳米颗粒钝化或SiO₂钝化层两种手段都能提升AlGaN-MSM结构紫外探测器性能。暗电流测试表明，SiO₂纳米颗粒和SiO₂钝化层可使器件暗电流下降1~2个数量级，达到nA量级。光谱响应测试发现，在5 V偏压下，探测器在300 nm处具有陡峭的截止边，这表明其具有很好的深紫外特性，光谱响应提高了10³倍，紫外可见抑制比高达10⁵。     

SiO2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响

采用对a-AlGaN表面沉积SiO₂纳米颗粒制备工艺得到了金属-半导体-金属(MSM)结构的a-AlGaN紫外探测器。与没有沉积SiO₂纳米颗粒的探测器件相比,沉积SiO₂纳米颗粒使器件的暗电流下降了一个数量级,峰值光谱响应度提高了近3个数量级,紫外/可见抑制比大于10³。     

聚乙烯亚胺对氧化锌纳米阵列形貌的影响

采用化学沉淀法,以硝酸锌和六次亚甲基四胺的水溶液为生长溶液,在涂覆氧化锌晶种层的玻璃衬底上制备了定向生长的氧化锌纳米棒阵列,并研究了添加剂聚乙烯亚胺的浓度对氧化锌纳米棒形貌和结构的影响.X射线衍射和场发射扫描电镜的结果表明,合成的氧化锌纳米棒阵列较为均匀致密,具有六方纤锌矿结构,且有沿(002)晶面择优生长的特性;随着聚乙烯亚胺浓度的增加,氧化锌纳米棒的直径减小,直径分布趋于均匀,且氧化锌纳米棒的形貌也从锥状转变为柱状结构;另外,聚乙烯亚胺的加入对氧化锌的生长速度具有抑制作用,当聚乙烯亚胺的浓度增加至0.012 mol·L-1时,无氧化锌阵列生长.对氧化锌纳米棒阵列进行了拉曼光谱表征,结果表明,随着溶液中聚乙烯亚胺浓度的增加,氧化锌纳米棒的氧空位缺陷减少.最后,对聚乙烯亚胺浓度对氧化锌纳米阵列影响的机理进行了探讨.     

Growth of ZnO nanorods by aqueous solution method with electrodeposited ZnO seed layers

ZnO nanorod arrays on ZnO-coated seed layers were fabricated by aqueous solution method using zinc nitrate and hexamethylenetetramine at low temperature. The seed layers were coated on ITO substrates by electrochemical deposition technique, and their textures were dominated by controlling the deposition parameters, such as deposition potential and electrolyte concentration. The effects of the electrodeposited seed layers and the growing parameters on the structures and properties of ZnO nanorod arrays were primarily discussed. The orientation and morphology of both the seed layer and successive nanorods were analyzed by using X-ray diffraction (XRD), SEM and TEM. The results show that the seed layer deposited at −700 mV has evenly distributed crystallites and (0 0 2) preferred orientation; the density of resultant nanorods is high and ZnO nanorods stand completely perpendicular onto substrates. Meanwhile, the size of nanorods quite also depends on the growth solution, and the higher concentration of growth solution primary leads to a large diameter of the ZnO nanorods.     

Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods

Three-dimensional （3D） nanostructures in thin film solar cells have attracted significant attention due to their appli- cations in enhancing light trapping. Enhanced light trapping can result in more effective absorption in solar cells, thus leading to higher short-circuit current density and conversion efficiency. We develop randomly distributed and modified ZnO nanorods, which are designed and fabricated by the following processes： the deposition of a ZnO seed layer on sub- strate with sputtering, the wet chemical etching of the seed layer to form isolated islands for nanorod growth, the chemical bath deposition of the ZnO nanorods, and the sputtering deposition of a thin Al-doped ZnO （ZnO：Al） layer to improve the ZnO/Si interface. Solar cells employing the modified ZnO nanorod substrate show a considerable increase in solar energy conversion efficiency.     

CdS quantum dot-sensitized ZnO nanorod-based photoelectrochemical solar cells

ZnO nanorods have been grown using ZnO seed layer onto ITO-coated glass substrates. CdS quantum dots have been deposited onto ZnO nanorods using simple precursors by chemical method and the assembly of CdS quantum dots with ZnO nanorod has been used as photo-electrode in quantum dot-sensitized solar cells. X-ray diffraction results show that ZnO seed layer, ZnO nanorods, and CdS quantum dot-sensitized ZnO nanorods exhibit hexagonal structure. The particle size of CdS nanoparticle is 5 nm. The surface morphology studied using scanning electron microscope shows that the top surface of the vertically aligned ZnO nanorods is fully covered by CdS quantum dots. The ZnO nanorods have diameter ranging from 100 to 200 nm. The absorption spectra reveal that the absorption edge of CdS quantum dot-sensitized ZnO nanorods shift toward longer wavelength side when compared to the absorption edge of ZnO. The efficiency of the fabricated CdS quantum dot-sensitized ZnO nanorod-based solar cell is 0.69% and is the best efficiency reported so far for this type of solar cells.     

Characterisation of ZnO nanorod arrays grown by a low temperature hydrothermal method

In this paper, growth steps of well defined ZnO nanorod arrays deposited on seeded substrates were investigated. To obtain ZnO seed layer on glass substrates, a successive ionic layer adsorption and reaction (SILAR) method was used and then ZnO nanorods were grown on seed layer using a chemical bath deposition (CBD) method. The effects of seed layer and deposition time on morphology, crystallographic structure (e.g. grain size, microstrain and dislocation density) and electrical characteristics of ZnO nanorods were studied. From the SEM micrographs, it could be seen that the ZnO nanorods densely covered the substrate and were nearly perpendicular to the substrate surface. The XRD patterns showed that the ZnO nanorod arrays had a hexagonal wurtzite structure with a preferred orientation along the (002) plane. An increase in deposition time resulted in an increase in the intensity of the preferred orientation and grain size, but a decrease in microstrain and dislocation density. Electrical activation energies of the structures were calculated as 0.15–0.85?eV from current–temperature characteristics. It was concluded that the morphologies of the structures obtained in this study via a simple and fast solution method can provide high surface areas which are important in area-dependent applications, such as solar cells, hydrogen conversion devices, sensors, etc.     

Solution-based growth of ZnO nanorods for light-emitting devices: hydrothermal vs. electrodeposition

ZnO nanorods have been grown by two inexpensive, solution-based, low-temperature methods: hydrothermal growth and electrodeposition. Heterojunction n-ZnO nanorods/p-GaN light-emitting diodes have been studied for different nanorod growth methods and different preparation of the seed layer. We demonstrate that both the nanorod properties and the device performance are strongly dependent on the growth method and seed layer. All the devices exhibit light emission under both forward and reverse bias, and the emission spectra can be tuned by ZnO nanorod deposition conditions. Electrodeposition of rods or a seed layer results in yellow emission, while conventional hydrothermal growth results in violet emission.     

Boundary layer-assisted chemical bath deposition of well-aligned ZnO rods on Si by a one-step method

ZnO seed layers and well-aligned ZnO single-crystalline micro/nanorods were synthesized on bare Si in one step without the assistance of catalysts by chemical bath deposition. Scanning electron microscopy (SEM) images and X-ray diffraction patterns show that the alignment of ZnO rods on Si(100) could be adjusted by varying the substrates’ angles of incline, the reaction temperature, and the precursor concentration. Transmission electron microscopy cross-sectional images demonstrate that a polycrystalline seed layer with (0002) preferred orientation was formed between the well-aligned rods and Si substrate placed vertically while a randomly oriented layer was formed between the randomly aligned rods and Si substrate placed horizontally. The formation of seed layers and alignment of as-synthesized ZnO rods were attributed to the assistance of boundary layers in a chemical bath deposition system.     

Synthesis and properties of boron doped ZnO nanorods on silicon substrate by low-temperature hydrothermal reaction

Boron doped ZnO nanorods were fabricated by hydrothermal technique on silicon substrate covered with a ZnO seed layer. It is found that the concentration of boric acid in the reaction solution plays a key role in varying the morphology and properties of the products. The growth rate along the [0 0 0 1] orientation (average size in diameter) of the doped ZnO nanorods decreased (increased) with the increase of boric acid concentration. Based on the results of XRD, EDX and XPS, it is demonstrated that the boron dopants tend to occupy the octahedral interstice sites. The photoluminescence of the ZnO nanorods related to boron doping are investigated.     

Alignment-controlled hydrothermal growth of well-aligned ZnO nanorod arrays

ZnO nanorod arrays (ZNAs) were prepared via a two-step seeding and solution hydrothermal growth process. Effects of preparing parameters such as seed layer, colloid concentration, substrate and precursor concentration, on the alignment control of ZNAs were systematically investigated. The deviation angle of ZnO nanorods was measured to evaluate the alignment of arrays. Results show that seed layer not only controls the vertical orientation of ZNAs, but also the compactness of ZNAs. Altering colloid concentration and substrate can influence the microstructure of ZnO seed layer and affect the ordered alignment of ZNAs. The precursor concentration has an insignificant effect on the alignment of ZNAs but has great impact on the morphology of ZNAs. Alignment-controlled and well-aligned ZnO nanorods with different diameter and aspect ratio can be obtained by properly controlling the preparing parameters. A growth mechanism was proposed for the growth of ZnO nanorods.     

Effect of KOH molarity and annealing temperature on ZnO nanostructure properties

In this work, ZnO nanorods (NRs) were fabricated using a low cost chemical bath deposition (CBD) method. The effect of the potassium hydroxide concentration on the fabricated ZnO nanostructures was studied in depth. The optical, structure, and surface morphology properties of the fabricated ZnO nanostructures were investigated using Uv-vis spectroscopy, XRD, and SEM. The results indicate that the formation of hexagonally structured ZnO nanorods with different lengths and diameters was dependent on the KOH concentration. The sample prepared with 2 M of KOH was the best one for optoelectronic applications, since it has the smallest diameters. This sample was annealed at different temperatures (473 K–1073 K). Positron Annihilation Lifetime Spectroscopy was used to determine the defects in the ZnO nanorods. The results show that the positron mean lifetime (τ_m) decreased as the annealing temperature increased, which means that the overall defects in the ZnO nanorods decreased with increasing temperature. Consequently, higher performance semiconductor devices based on ZnO nanorods could be fabricated after high annealing of the ZnO nanorods.     

Ag-doped ZnO nanorods synthesized by two-step method

A two-step method is adopted to synthesize Ag-doped ZnO nanorods.A ZnO seed layer is first prepared on a glass substrate by thermal decomposition of zinc acetate.Ag-doped ZnO nanorods are then assembled on the ZnO seed layer using the hydrothermal method.The influences of the molar percentage of Ag ions to Zn ions(RAg/Zn) on the structural and optical properties of the ZnO nanorods obtained are carefully studied using X-ray diffractometry,scanning electron microscopy and spectrophotometry.Results indicate that Ag ions enter into the crystal lattice through the substitution of Zn ions.The<002>c-axis-preferred orientation of the ZnO nanorods decreases as RAg/Zn increases.At RAg/Zn >1.0%,ZnO nanorods lose their c-axis-preferred orientation and generate Ag precipitates from the ZnO crystal lattice.The average transmissivity in the visible region first increases and then decreases as R Ag/Zn increases.The absorption edge is first blue shifted and then red shifted.The influence of Ag doping on the average head face,and axial dimensions of the ZnO nanorods may be optimized to improve the average transmissivity at RAg/Zn <1.0%.