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1.
Structural behaviour of cyclo-octane under high pressure is studied by using a synchrotron x-ray source in a diamond anvil cell (DAC) up to 40.2 GPa at room temperature. The cyclo-octane firstly solidifies to the triclinic phase at 0.87 GPa. With the increasing pressure, the phase of cyclo-octane changes to the tetragonal phase at about 6.0 GPa and then transforms to amorphous phase above 18.2 GPa, which is kept till to 40.2 GPa. All the phase transitions of cyclo-octane are irreversible.  相似文献   

2.
 利用在金刚石压砧上集成的微电路,原位测量了CdSe多晶粉末在温度为300~450 K、压力达到23 GPa时电阻率随温度和压力的变化关系。实验结果表明:在加压过程中,电阻率在2.6 GPa压力时出现的异常改变,对应着CdSe从纤锌矿向岩盐矿结构的转变,而在6.0、9.8、17.0 GPa等压力处出现的电阻率异常,则是由CdSe中的电子结构的变化所引起的;在卸压过程中,只在约14.0和3.0 GPa压力下观察到了两个电阻率异常点。通过对电阻率随压力变化曲线的模拟,得出了CdSe高压相的带隙随压力的变化关系,据此预测CdSe金属化的压力应在70~100 GPa之间。变温实验结果表明,在实验的温度和压力范围内,CdSe的电阻率均随温度的增加而升高。  相似文献   

3.
Benzoic acid (C6H5COOH, BA) has been studied by high pressure Raman and fluorescence spectroscopy up to about 13.40 GPa using a diamond anvil cell at room temperature. The changes of lattice modes are interpreted as the crystal structure transformation. Three possible phase transitions, with the pressure increasing up to about 0.55, 3.67 and 11.10 GPa, are, respectively, elucidated as crystalline-to-crystalline, crystalline-to-amorphous transitions. A new material formed when the pressure is up to above 11.10 GPa remains stable after the pressure is released.  相似文献   

4.
 用金刚石压砧高压X光衍射技术研究了Ⅱ-Ⅵ族化合物CdTe的室温状态方程和室温高压相变。实验的最高压力达39.2 GPa。实验中发现CdTe从(3.3±0.1)GPa开始从闪锌矿结构相相NaCl结构相转变,相变时体积收缩15.8%;从(10.3±0.2)GPa开始从NaCl相向β-Sn结构相转变,相变时无体积突变;在(12.2±0.2)GPa由β-Sn相向正交结构相转变,相变时也无体积突变。CdTe的压缩数据用最小二乘法以Bridgman状态方程和Murnaghan状态方程拟合,得到其零压时合相变压力时各个相的体弹模量及体弹模量的压力微商,并与其它的实验合理论结果进行比较。  相似文献   

5.
王月  张凤霞  王春杰  高春晓 《物理学报》2014,63(21):216401-216401
采用高压原位测量技术在0–35 GPa压力范围内对ZnSe直流和交流电学性质进行了研究. 通过分析直流电学测量结果可知,在实验压力区间内ZnSe经历了由纤锌矿转变为朱砂相再转变为岩盐相的两次相结构转变. 分析温度与材料电阻率的变化关系表明ZnSe在高压下的相变为金属化相变,并通过交流阻抗谱的测量实验证实了这个结论. 进一步比较低压条件下晶粒和晶界电阻的变化,表明朱砂相结构的ZnSe更接近各向同性材料. 关键词: 高压 ZnSe 电学  相似文献   

6.
 使用Bundy和Dunn发展起来的带有烧结金刚石砧的Drickamer型高压装置,用固定点测压法标定实验压力,在室温及0~43 GPa的压力范围内测量了稀土金属中Pr、Nd、Sm、Gd、Tb、Dy、Ho、Tm、Lu和Yb的电阻随压力的变化。在各稀土元素的电阻随压力变化的曲线上,观测到了若干“凸起”和斜率突变点,根据Jayaraman提出的三价稀土在压力作用下的相变顺序,得到了这些突(凸)变点分别对应着hcp→Sm-type→dhcp→fcc相变顺序中的某一类型的相变压力。此外还观测到了Pr、Gd、Tb的fcc相随着压力再增高而发生的相变,根据已报导的关于Pr的工作,推测Gd和Tb的这一相变应为fcc→dfcc相变,它们分别发生在22.0和24.5 GPa。在本工作所得结果基础上对Johansson的三价稀土总相图进行了修正。  相似文献   

7.
High-pressure effects on the superconducting transitions of beta-pyrochlore oxide superconductors AOs(2)O(6) (A = Cs,Rb,K) are studied by measuring resistivity under high pressures up to 10 GPa. The superconducting transition temperature T(c) first increases with increasing pressure in every compound and then exhibits a broad maximum at 7.6 K (6 GPa), 8.2 K (2 GPa), and 10 K (0.6 GPa) for A = Cs, Rb, and K, respectively. Finally, the superconductivity is suppressed completely at a critical pressure near 7 GPa and 6 GPa for A = Rb and K and probably above 10 GPa for A = Cs. Characteristic changes in the coefficient A of the T(2) term in resistivity and residual resistivity are observed, both of which are synchronized with the corresponding change in T(c).  相似文献   

8.

Recently, it has been shown that CdTe has two sucessive phase transitions over a narrow pressure range at ?3.5 GPa. In this work, the pressure cycle method using a Paris-Edinburgh cell up to 6 GPa has been applied to CdTe samples in order to obtain recovered CdTe nanocrystals which were characterized by high resolution transmission electron microscopy (HRTEM), electron diffraction and Raman scattering. Such retrieved nanocrystals are nearly spherical, with diameters ranging from 10 to 30 nm, and their structure is zinc-blende (ZB). Their Raman spectra is consistent with the CdTe phonon dispersion curves but reveal a phonon confinement effect.  相似文献   

9.
In situ electrical resistivity measurement of CdSe was performed under high pressure and moderate temperature using a diamond anvil cell equipped with a microcircuit. With the pressure increasing, a sharp drop in resistivity of over two orders of magnitude was observed at about 2.6 GPa, it was caused by the transition to the rock-salt CdSe. After that, the resistivity decreased linearly with pressure. However, in different pressure range, the decreasing degree was obviously different. This attributed to the different electron structures. By fitting to the curve of pressure dependence of resistivity in different pressure range, the relationship of the band gap to pressure was given and the metallization pressure was speculated to be in the range of 70-100 GPa. The temperature dependence of resistivity showed that in the experimental temperature and pressure range the resistivity had a positive temperature coefficient.  相似文献   

10.
利用金刚石对顶砧测量了恶二唑衍生物微晶, 1,4-bis[(4-methyloxyphenyl)-1,3,4-oxadiazolyl]- 2,5-bisheptyloxyphenylene (OXD-2), 电阻随压力和温度的变化关系,并利用有限元分析方法计算了样品的电阻率。实验中,测量压力和温度达到了16 GPa和150℃。样品的电阻率随着温度的升高而降低,说明样品表现出半导体传导特性。在90-100 ℃之间,样品的电阻率有一明显的下降,说明这时发生了温度诱导的相变。随着压力的增加,样品的电阻率在6GPa左右达到最大值,此后随着压力的增加而下降。结合原位x光数据,在6GPa左右的电阻突变应该是由于样品在压力的诱导下发生了无序化的相变。  相似文献   

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