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1.
Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE). From the results of Rutherford backscattering (RBS)/channeling and high resolution x-ray diffraction (HRXRD), we obtain the lattice constant (a and c) of two GaN epilayers (aA = 0.3190 nm, cA = 0.5184 nm and aB = 0.3192 nm, CB = 0.5179 nm), the crystal quality of two GaN epilayers ( ХminA=4.87%, ХminB =7.35% along 〈1-↑213〉 axis) and the tetragonal distortion eT of the two samples along depth (sample A is nearly fully relaxed, sample B is not relaxed enough). Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si (111) substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.  相似文献   

2.
A quaternary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with a thick (〉 1μm) GaN intermediate layer. The compositions of In and A1 are determined by Rutherford backscattering (RBS). The low ratio between the channelling yield and random yield according to the spectra of RBS/C (χmin = 1.44%) means that the crystal quality of the AllnGaN film is perfect. The perpendicular and the parallel elastic strain of the AIlnGaN layer, e^⊥=-0.15% and e^//= 0.16%, respectively, are derived using a combination of XRD and RBS/channelling.  相似文献   

3.
Lu2.1Bi0.9Fe5O12 (LuBiIG) garnet films are prepared by liquid phase epitaxy (LPE) method on gadolinium gallium garnet (GGG) substrates from lead-free flux. Three-inch single crystal garnet films with (444) orientation and good surface are successfully fabricated. The lattice mismatch to the GGG(111) substrate is as small as 0.08%. The ferromagnetic resonance (FMR) linewidth of the film is 2AH = 2.8-5.10e, the Faraday rotation is 1.64 deg/μm at 633nm at room temperature and the optical absorption coefficient of the film is 600cm-1 in visible range and about 100-170 cm-1 when the wavelength is larger than 800 nm. The epitaxy film possesses dominating in-plane magnetization with a saturation magnetization of about 1562G. These superior optical, magnetic-optical (MO) and microwave properties of our garnet films have potential applications in both MO and microwave devices.  相似文献   

4.
A sequential decay model is used to study isoscaling, i.e. the factorization of the isotope ratios from sources of different isospins and sizes over a broad range of excitation energies, into fugacity terms of proton and neutron number, R21(N, Z) = Y2( N, Z)/Y1( N, Z) = Cexp(αN -βZ). It is found that the isoscaling parameters α and β have a strong dependence on the isospin difference of equilibrated source and excitation energy, no significant influence of the source size on α andβ has been observed. It is found that α and β decrease with the excitation energy and are linear functions of 1/T and △(Z/A)2 or△(N/A)2 of the sources. Symmetry energy coefticient Gsym is constrained from the relationship of a and source △(Z/A)2, /3 and source △(N/A)2.  相似文献   

5.
An Ni-AI-Co system embedded-atom-method potential is constructed for the γ(Ni)/γ'(Ni3A1) superalloy based on experiments and first-principles calculations. The stacking fault energies (SFEs) of the Ni(Co, A1) random solid solutions are calculated as a function of the concentrations of Co and A1. The calculated SFEs decrease with increasing concentrations of Co and A1, which is consistent with the experimental results. The embedding energy term in the present potential has an important influence on the SFEs of the random solid solutions. The cross-slip processes of a screw dislocation in homogenous Ni(Co) solid solutions are simulated using the present potential and the nudged elastic band method. The cross-slip activation energies increase with increasing Co concentration, which implies that the creep resistance of γ(Ni) may be improved by the addition of Co.  相似文献   

6.
With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880μm^2) is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm (about 977mW) is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.  相似文献   

7.
HL-2A tokamak, the first tokamak with divertor in China, has been constructed and put into operation in 2002. The main parameters are R=1.65 m, a=0.4 m, BT=2.8 T, Ip = 0. 48 MA. The divertor of HL-2A is unique, because it is characterized with a large closed divertor chamber. The device has double divertor chamber, but now it is operating with lower single null configuration to study the physics of divertor for the next step design of a divertor. Supersonic molecular beam injection (SMBI) system with LN2 cooling trap was first installed and demonstrated on the HL-2A tokamak in 2004. The first results of SMBI into HL-2A plasma are to demonstrate the function of the HL-2A divertor and to observe the cold pulse propagation during multi-pulse SMBI on HL-2A Tokamak.  相似文献   

8.
黄伟其  刘世荣 《中国物理》2006,15(2):389-393
The investigation on the oxidation behaviour of Si1-xGex alloys (x=0.05, 0.15, and 0.25) is carried out. It is found for the first time that on the oxide film a germanium nano-cap with a thickness of 1.8-2.8nm and a few Ge nanoparticles with diameters ranging from 5.5 nm to 10 nm are formed by the low-temperatu.re laser-assisted dry oxidation of Si1-xGex substrate. A new scanning method on the decline cross-section of the multiple-layer sample is adopted to measure the layer thickness and the composition. Some new peaks in photoluminescence (PL) spectra are discovered, which could be related to the nano-cap and the nano-particles of germanium. A suitable model and several new calculating formulae with the unrestricted Hartree-Fock-Roothaan (UHFR) method and quantum confinement analysis are proposed to interpret the PL spectra and the nano-structure mechanism in the oxide.  相似文献   

9.
A theoretical investigation on the differential cross section (DCS) from low-energy electron scattering of high-lying vibrational excited H2 molecules is reported. The body-frame vibrational close-coupling (BFVCC) approach is used to solve the scattering equations. Quantum scattering potentials include static, exchange, and polarization contributions based on ab initio calculations. By including the contributions of 9 partial waves (Nt = 9), 18 Morse vibrational states (Nv = 18), and 16 molecular symmetries (A = 0, 1,..., 7), the calculated DCSs have good agreement with available experimental measurements and theoretical studies, and show that high angular momenta and good vibrational wavefunctions are necessary to better describe the scattering physics of electronmolecule vibrational excitation collisions.  相似文献   

10.
The free surface and unrotational-symmetric surface optical elements have been applied more and more widely along with the development of optical design technology, although they are still difficult for manufacturing. In this letter, a SiC unrotational-symmetric aspheric surface whose surface equation is z =- 3λ(x^a + y^3) (λ= 0.6328μm) has been introduced. The tilt abstraction is adopted to minimize the material removal. The surface figures are peak-to-valley (PV) value of 0.327A and root-mean-square (RMS) value of 0.023A. A non-null testing method based on digital mask is proposed to test this surface. The accuracy of the method is testified by the experiment of standard sphere testing.  相似文献   

11.
The decay constants for D and Ds mesons, denoted fD and fDS respectively, are equal in the SU(3)V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)V violating contribution to (FDS/FD) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.  相似文献   

12.
Most studies on Co-doped TiO2 system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO2/Co/TiO2/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO2 on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.  相似文献   

13.
The effects of HfOxNy on the electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10−8 A/cm2 at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfOxNy film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfOxNy or HfO2 structure.  相似文献   

14.
Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.  相似文献   

15.
Vibrational and rotational analyses of the near-infrared bands of S2 lying in the region 7440–8085 Å are reported. They form a new band system involving a 3Πgi-3Σu+ transition and arise from the same initial 3Πgi state of the 3Πgi-3Δui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules 32S34S and 34S2 are also reported.  相似文献   

16.
宋杰  许福军  黄呈橙  林芳  王新强  杨志坚  沈波 《中国物理 B》2011,20(5):57305-057305
The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.  相似文献   

17.
The magnetic and electrical properties of the Al-doped polycrystalline spinels ZnxCryAlzSe4 (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature TN≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θCW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than TN suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature Tf=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.  相似文献   

18.
The branching ratio is calculated for Λ8Li decay to the (2+) 8Be1 states near 17 MeV, using intermediate coupling wave functions for Λ8Li and for the relevant 8Be1 states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the Λ8Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent 8Be1 (? 17 MeV → 24He decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to 8Be1 (16.6 MeV), as is observed to be the case, rather than to 8Be1 (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.  相似文献   

19.
At helium temperatures two sharp lines at 9350 and 9510 cm?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the 5T2g5Eg transition in Fe2+ at the octahedral site in MgO. The lower energy line has a half width of 4 cm?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (5T2g)T2g ground state to the 5Eg excited state. The second line, with a halfwidth of ~ 35 cm?1, a vibrational sideband.  相似文献   

20.
We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for ppV + 0, 1 or 2 jets, where V = W± or Z0. The form of the results lends itself to immediate numerical evaluation.  相似文献   

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