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1.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明:随衬底温度的升高,材料 中的氢含量总的趋势下降;傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加(在1019cm-3量级);与高衬底温度相 比,低衬底温度制备的材料易于后氧化,这说明低温制备材料的稳定性不好. 关键词: 甚高频等离子体增强化学气相沉积 微晶硅薄膜 傅里叶变换红外吸收  相似文献   

2.
对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅(μc_Si∶H)薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明:μc_Si∶H薄膜中,氧以Si—O,O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示:沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响;而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅(a_Si:H)薄膜. 关键词: 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染  相似文献   

3.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池.电池的J-V测试结果表明:在实验的硅烷浓度和功率范围内,随硅烷浓度的降低和功率的加大,对应电池的开路电压逐渐变小;硅烷浓度的不同对电池的短路电流密 度有很大的影响,但功率的影响在实验研究的范围内不是很显著.对于微晶硅电池,N层最好 是非晶硅,这是因为一方面可以降低对电流的横向收集效应,另一方面也降低了电池的漏电概率,提高了电池的填充因子. 关键词: 微晶硅太阳电池 甚高频等离子体增强化学气相沉积  相似文献   

4.
硼对沉积本征微晶硅薄膜特性的影响   总被引:1,自引:0,他引:1       下载免费PDF全文
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同腔室环境下的微晶硅薄膜.对单室沉积掺杂层p材料后遗留在腔室中的硼对本征微晶i材料电学特性和结构特性的影响进行了详细研究.测试结果表明:单室沉积p层后的硼降低了微晶i层材料的暗电导,增加了材料的光敏性;由于硼对i层污染程度的不同,使得材料的激活能发生了变化;腔室中残余的硼也导致微晶硅薄膜的结晶状况恶化,同时弱化了材料的(220)择优取向.而在较高功率和较强氢稀释下制备的晶化率较高,(220)晶向明显择优的材料受硼污染影响相对减小. 关键词: 单室 甚高频等离子体增强化学气相沉积 微晶硅 硼  相似文献   

5.
甚高频高速沉积微晶硅薄膜的研究   总被引:2,自引:0,他引:2       下载免费PDF全文
采用甚高频化学气相沉积(VHF-PECVD)技术制备了系列微晶硅(μc-Si:H)薄膜样品,重点研究了硅烷浓度、功率密度、沉积气压和气体总流量对薄膜沉积速率和结晶状态的影响,绘制了沉积气压和功率密度双因素相图. 以0.75nm/s的高速沉积了器件质量级的微晶硅薄膜,并以该沉积速率制备出了效率为5.5%的单结微晶硅薄膜电池. 关键词: 微晶硅薄膜 高速沉积 甚高频化学气相沉积  相似文献   

6.
高海波  李瑞  卢景霄  王果  李新利  焦岳超 《物理学报》2012,61(1):18101-018101
为提高微晶硅薄膜的纵向结晶性能, 在甚高频等离子体增强化学气相沉积技术的基础上, 采用过渡参数缓变和两步法相结合的方法在普通玻璃衬底上高速沉积薄膜. 当功率密度为2.1 W/cm2, 硅烷浓度在6%和9.6%之间变化时, 从薄膜方向和玻璃方向测算的Raman晶化率的差异维持在2%以内. 硅烷浓度为9.6%时, 薄膜沉积速率可达3.43 nm/s, 从薄膜方向和玻璃方向测算的Raman晶化率分别为50%和48%, 差异的相对值仅为4.0%. 合理控制过渡阶段的参数变化, 可使两个方向的Raman晶化率差值下降到一个百分点. 表明采用新方法制备薄膜, 不仅可以抑制非晶孵化层的形成, 改善微晶硅薄膜的纵向结构, 还为制备优质薄膜提供了较宽的参数变化空间. 关键词: 微晶硅薄膜 非晶孵化层 高速沉积 甚高频等离子体增强化学气相沉积  相似文献   

7.
申陈海  卢景霄  陈永生 《物理学报》2009,58(10):7288-7293
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术在高功率密度和高压强条件下,通过改变硅烷浓度和气体总流量对薄膜沉积参数进行了两因素优化,最终在硅烷浓度为45%,气体总流量为100 sccm条件下,获得沉积速率142 nm/s,电导激活能047 eV的优质硅薄膜;同时,通过单因素优化制备出沉积速率为21 nm/s的微晶硅薄膜.利用晶粒间界势垒模型和费米能级统计偏移模型对薄膜的电学特性和传导行为分别进行了研究分析,同时初步分析了“后氧化”对薄膜电学性能的影响. 关键词: μc-Si:H 甚高频等离子体增强化学气相沉积 高速沉积 电学特性  相似文献   

8.
采用拉曼散射光谱和PR650光谱光度计对VHF-PECVD制备的微晶硅薄膜进行了结构表征和在线监测研究.结果表明:功率对材料的晶化率(χc)有一定的调节作用,硅烷浓度大,微调作用更明显;SiH*的强度只能在一定的范围内表征材料的沉积速率,功率大相应的速率反而下降;I[Hα*]/I[SiH*]强度比值反映了材料晶化程度,此结果和拉曼散射光谱测试结果显示出一致性;I[Hβ*]/I[Hα*]的强度比表明氢等离子体中的电子温度随功率的增大而逐渐降低. 关键词: 甚高频等离子体增强化学气相沉积 微晶硅 拉曼散射谱 光发射谱  相似文献   

9.
高压PECVD技术沉积硅基薄膜过程中硅烷状态的研究   总被引:4,自引:0,他引:4       下载免费PDF全文
采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法在不同功率下制备了一系列硅薄膜材料,研究了材料晶化率和生长速度随功率变化的规律, 进而研究PECVD方法沉积硅薄膜过程中的硅烷反应状态,并提出可以根据硅烷耗尽程度的不同将硅烷反应状态分为未耗尽、耗尽和过耗尽三种.然后,对不同硅烷反应状态下的材料结构、光电性能以及相应的电池进行了研究,并指出适合于太阳电池本征层的高质量微晶硅材料应该沉积在硅烷耗尽状态. 关键词: 耗尽状态 微晶硅 光发射谱  相似文献   

10.
采用甚高频等离子体增强化学气相沉积技术,在前期单室沉积的微晶硅薄膜太阳电池和非晶硅/微晶硅叠层太阳电池研究的基础上,通过对微晶硅底电池本征层硅烷浓度的优化,获得了初始效率达到11.02%(电池面积1.0 cm2)的非晶硅/微晶硅叠层太阳电池.同时,100 cm2的非晶硅/微晶硅叠层太阳电池的组件效率也达到了9.04%. 关键词: 非晶硅/微晶硅叠层电池 单室 甚高频  相似文献   

11.
磁控溅射制备氧化硅薄膜生长速率   总被引:1,自引:0,他引:1       下载免费PDF全文
氧化硅薄膜是半导体工业中常见的薄膜材料,通常采用化学气相沉积方法制备。但是这种制备方法存在缺欠。采用磁控溅射的方法首先在石英衬底上制备了氧化硅薄膜。研究了射频功率、氧气含量和溅射压强对氧化硅薄膜沉积速率的影响。发现沉积速率随着射频功率的增加而增加;随着氧气含量的增加,先减小后增大;当溅射压强在0.4~0.8 Pa之间变化时,沉积速率变化很小,当溅射压强超过0.8 Pa时沉积速率迅速下降。讨论了不同生长条件下造成氧化硅薄膜生长速率变化的原因。  相似文献   

12.
不同生长条件下ZnO薄膜电学性质的研究   总被引:1,自引:1,他引:0       下载免费PDF全文
ZnO薄膜中的高的背景电子浓度能够对p型掺杂形成补偿,从而对p型掺杂造成障碍,了解高背景电子浓度的来源有助于对p型掺杂的研究。本文采用分子束外延技术在不同真空度下在a面蓝宝石衬底上生长了一系列氧化锌薄膜,发现在低真空度下生长的样品的载流子浓度较高,为1019 cm-3量级;而高真空度下生长的样品,其载流子浓度比低真空生长的样品显著降低,降低了3个数量级。在相同条件下生长的样品,通过不同的后处理手段进行处理后,其电子浓度未发生明显变化,说明氧空位等本征缺陷不是ZnO薄膜中电子的主要来源,高背景电子浓度应该与生长过程中非故意引入的杂质相关。通过低温光致发光表征,发现低真空度下生长的样品在低温下3.366 eV处有强的施主束缚激子发光峰,而高真空度下生长的样品的此发光峰显著变弱。由此,高电子浓度被归结为与生长过程中非故意引入的氢杂质相关。  相似文献   

13.
杨杭生  聂安民  邱发敏 《中国物理 B》2010,19(1):17202-017202
Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O 2 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B 2 H 6 concentration of 2.5% during film deposition, the critical O 2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230-1280 cm-1 , frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.  相似文献   

14.
The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well as for the hydrogenated microcrystalline silicon carbon alloy films prepared by PECVD from silane methane gas mixture highly diluted in hydrogen, for comparison. The study demonstrates clearly that the increase in the carbon content prevents the crystallization process in the hydrogen diluted samples while the crystallization process is enhanced in the laser annealing of amorphous samples because of the increase in the absorbed laser energy density that occurs for the amorphous films with the higher carbon content. This, in turn, facilitates the crystallization for the laser annealed samples with higher carbon content, resulting in the formation of SiC crystallites along with Si crystallites.  相似文献   

15.
Ultra-thin gadolinium films with thicknesses between 8 and 101 Å were deposited on AT-cut crystalline quartz substrates under ultra high vacuum conditions, and subsequently subjected to composition and morphologic characterization through X-ray photo-spectroscopy analysis and atomic force microscopy. Oxygen contamination is found on the samples, and its amount is estimated in terms of the thickness of an oxygen layer over the gadolinium films after subtracting the contribution to the XPS spectra of the underlying background. Atomic force microscope pictures provide evidence of having metal island films, with two growing regimes: the Volmer-Weber mode for the thinner films considered and the Stranski-Krastanov growing mode for the thicker ones. From evaluation of the sticking coefficient, the shape of the islands is approximated in terms of oblate spheroid caps and variation of the contact angle with film mass thickness is reported.  相似文献   

16.
The angle resolved X-ray photoelectron spectroscopy measurements were used to monitor a level of contamination of the InP:S (1 0 0) substrates during the cleaning processes with deionized water and isopropanol. Some contaminations with carbon and oxygen were found for a broken under ultrahigh vacuum InP:S substrate, indicating the contamination of the crystal during the growth process. The substrates after cleaning with deionized water and isopropanol were contaminated with carbon, oxygen, nitrogen and silicon. Concentration of carbon decreases inwards the substrates while concentration of oxygen is enhanced even in the deeper layers for both processes. The nitrogen concentration is higher for the samples rinsed with water. Roughness of the surfaces is higher for the samples rinsed with water what indicated the AFM measurements.  相似文献   

17.
This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.  相似文献   

18.
雷青松  吴志猛  耿新华  赵颖  奚建平 《中国物理》2005,14(11):2342-2347
Hydrogenated microcrystalline and amorphous silicon thin films were prepared by very high frequency plasmaenhanced chemical vapour deposition (VHF PECVD) by using a mixture of silane and hydrogen as source gas. The influence of deposition parameters on the transition region of hydrogenated silicon films growth was investigated by varying the silane concentration (SC), plasma power (Pw), working pressure (P), and substrate temperature (Ts). Results suggest that SC and Ts are the most critical factors that affect the film structure transition from microcrystalline to amorphous phase. A narrow region in the range of SC and Ts, in which the rapid phase transition takes place, was identified. It was found that at lower P or higher Pw, the transition region is shifted to larger SC. In addition, the dark conductivity and photoconductivity decrease with SC and show sharp changes in the transition region. It proposed that the transition process and the transition region are determined by the competition between the etching effect of atomic hydrogen and the growth of amorphous phase.  相似文献   

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