光学工艺 微细加工技术与设备

TN305．7 2005064472 超厚SU-8负胶高深宽比结构及工艺研究=Process study of high-aspect-ratio ultrathick SU-8 microstrUCt ure[刊, 中]/张金娅(上海交通大学微纳米科学技术研究院,薄膜 与微细技术教育部重点实验室．上海(200030)),陈迪…∥ 功能材料与器件学报．-2005,11(2)．-251-254 采用新型SU-8光刻胶在UV-LIGA技术基础上制备 了各种高深宽比MEMS微结构,研究了热处理和曝光两 个重要因素对高深宽比微结构的影响,解决了微结构的开 裂和倒塌等问题,优化了SU-8胶工艺,获得了最大深宽比 为27:1的微结构。图6表1参7(于晓光)     

SU-8去胶工艺对电铸Ni材料力学性能的影响（英文）北大核心CSCD

SU-8负胶具有优异的力学性能、抗化学腐蚀性、热稳定性和生物兼容性,在MEMS工艺和器件中得到广泛应用。镍金属具有良好的力学性能和抗腐蚀性,因此常用来制作MEMS器件。在MEMS执行器中,弹性元件常采用电铸镍制作。SU-8经过经曝光显影后形成致密的交联网络结构是一种高分子聚合物,这种聚合物非常稳定,不溶于强酸强碱及常见的有机溶剂,尤其是在电铸金属结构后的SU-8胶的去除更为困难。目前的SU-8去胶技术,按去胶原理可分:机械物理去胶技术和氧化去胶技术。氧化去胶技术可以有效去除SU-8胶,但氧化去胶方法不同程度地损坏电铸金属,使其力学性能与去胶前相比发生显著的变化。因此需要研究去胶对Ni金属弹性模量的影响,从而为执行机构设计提供准确的基本数据。针对目前运用比较普遍的两种去除SU-8胶方式:微波等离子下游化学刻蚀和强碱熔盐浴,分别进行了去胶实验,对去胶前后的电铸Ni金属进行了弹性模量和硬度测试。实验结果表明,电铸镍的杨氏模量在经过微波等离子下游化学刻蚀后下降18%,而经过强碱熔盐浴后下降36%,但硬度下降不明显。     

SU-8去胶工艺对电铸Ni材料力学性能的影响（英文）

SU-8负胶具有优异的力学性能、抗化学腐蚀性、热稳定性和生物兼容性,在MEMS工艺和器件中得到广泛应用。镍金属具有良好的力学性能和抗腐蚀性,因此常用来制作MEMS器件。在MEMS执行器中,弹性元件常采用电铸镍制作。SU-8经过经曝光显影后形成致密的交联网络结构是一种高分子聚合物,这种聚合物非常稳定,不溶于强酸强碱及常见的有机溶剂,尤其是在电铸金属结构后的SU-8胶的去除更为困难。目前的SU-8去胶技术,按去胶原理可分:机械物理去胶技术和氧化去胶技术。氧化去胶技术可以有效去除SU-8胶,但氧化去胶方法不同程度地损坏电铸金属,使其力学性能与去胶前相比发生显著的变化。因此需要研究去胶对Ni金属弹性模量的影响,从而为执行机构设计提供准确的基本数据。针对目前运用比较普遍的两种去除SU-8胶方式:微波等离子下游化学刻蚀和强碱熔盐浴,分别进行了去胶实验,对去胶前后的电铸Ni金属进行了弹性模量和硬度测试。实验结果表明,电铸镍的杨氏模量在经过微波等离子下游化学刻蚀后下降18%,而经过强碱熔盐浴后下降36%,但硬度下降不明显。     

聚合物自写入光波导的时域有限差分模拟

利用时域有限差分方法,对非线性光学聚合物SU-8环氧树脂在激光作用下,其折射率会升高的过程进行了数值模拟与分析,得到SU-8薄膜与激光作用一定时间之后,其内部折射率的分布。分别对表面是平面及表面带有微透镜的SU-8薄膜进行了模拟。结果表明,利用折射率升高引起的自聚焦效应,可以在SU-8薄膜内自写入波导;写入的波导以自聚焦焦点为分界点,分为锥形波导和柱形波导。写入的波导长度随着与激光作用时间的增加而增长;在与激光相同的作用时间里,表面带有微透镜的SU-8薄膜,与表面是平面的SU-8薄膜相比,锥形波导的旁瓣更收敛,写入的波导长度更长;在微透镜底面半径保持不变以及曝光时间一定时,微透镜冠高与底面半径比例为0.08时比比例为0.24时写入的波导长度要长12.2%,其中锥形波导部分要长19.2%。     

SU-8光栅结构中的液晶激光特性

设计制作了SU-8光栅结构的染料掺杂手性向列相液晶激光器件,在器件正面和侧面均实现了随机激光辐射。将激光染料PM597、手性剂S-811、向列性液晶TEB30A按一定比例均匀混合,注入反平行摩擦处理的液晶盒中,器件的下基板通过光掩模法刻蚀出周期为15μm的光栅。利用532 nm的Nd∶YAG固体脉冲激光器作为泵浦源,器件的侧面既在580~590 nm范围内出现了多个离散分立的随机激光辐射峰,FWHM约0.19 nm,又在579~585 nm范围内出现独立的两个激光辐射峰,FWHM约0.19 nm;在器件正面获得了584~590 nm范围的随机激光辐射谱,FWHM约0.17 nm。加热器件至61℃,液晶相变为各向同性态,器件侧面仍出现了波长约590.60 nm、FWHM约0.24 nm的激光辐射峰。分析得出,液晶盒中引入SU-8光栅结构后,光子同时在液晶分子间多重散射和SU-8光栅中布拉格反射获得反馈放大,两种机制相辅相成。器件侧面出现的独立激光辐射峰主要由SU-8光栅布拉格反射提供反馈放大形成,而器件侧面和正面的随机激光辐射峰主要由液晶分子间多重散射提供反馈放大形成。     

激光光刻中的超分辨现象研究

激光光刻是加工微光学及二元光学掩模的主要手段。光刻的最细线宽对所加工的二元微器件性能起决定作用。本文导出了会聚的高斯光束用于激光光刻时在光刻胶内的光场近似上此可判断出能光刻线条的分辨力。若入射高斯光束受到振中相位调制时,胶层内的光强分布将发生变化,从而影响曝光线条的线宽和质量。计算看出：当入射光中心环受到遮拦时,可以得到超光刻物镜极限分辨的线条宽度（０．６μｍ）,但此时对曝光能量控制要求很高。在激     

严格电磁场波导方法的三维厚胶光刻工艺仿真（英文）北大核心CSCD

无论是在微机电系统(MEMS)还是集成电路(IC)领域,SU-8厚胶光刻已经成为制造高深宽比结构的主流工艺。为了取代昂贵而耗时的光刻实验,一套能够良好预测显影形貌,从而为优化光刻制造提供有效帮助的光刻仿真软件就成为必要而有价值的工具。基于严格电磁场波导法的理论,给出一种针对SU-8光刻胶在紫外光下的三维光刻仿真模型。利用该模型,能很好地预测显影后的光刻胶内光强分布和立体形貌。并完成了一系列仿真和实验结果来验证模型的有效性。仿真结果给出横截面光强分布图和显影立体形貌模拟图形,并与相应的实验结果进行对照。结果验证了本文提出的仿真模型的正确性,并且表明三维混合模型在保证精确性的前提下,较之其他仿真算法运算速度更快。     

严格电磁场波导方法的三维厚胶光刻工艺仿真（英文）

无论是在微机电系统(MEMS)还是集成电路(IC)领域,SU-8厚胶光刻已经成为制造高深宽比结构的主流工艺。为了取代昂贵而耗时的光刻实验,一套能够良好预测显影形貌,从而为优化光刻制造提供有效帮助的光刻仿真软件就成为必要而有价值的工具。基于严格电磁场波导法的理论,给出一种针对SU-8光刻胶在紫外光下的三维光刻仿真模型。利用该模型,能很好地预测显影后的光刻胶内光强分布和立体形貌。并完成了一系列仿真和实验结果来验证模型的有效性。仿真结果给出横截面光强分布图和显影立体形貌模拟图形,并与相应的实验结果进行对照。结果验证了本文提出的仿真模型的正确性,并且表明三维混合模型在保证精确性的前提下,较之其他仿真算法运算速度更快。     

太赫兹全金属光栅工艺中光刻胶内应力

建立了光刻工艺中内应力的三维有限元分析模型,采用热-结构耦合分析,研究了胶膜厚度、后烘温度以及降温速率对SU-8胶层中的内应力产生的影响。综合以上因素发现,较胶膜厚度和后烘温度,降温速率对胶膜应力影响最大,降温速率越小,胶膜内应力越小,当降温速率小于6℃/h时,进一步降低降温速率对内应力影响不大。根据上述仿真结果进行了全金属光栅的工艺实验,发现与内应力相关的问题得到了有效解决。     

四激光束干涉光刻制造纳米级孔阵的理论分析

为提供一个在大范围内曝光出深亚微米甚至纳米级周期性密集图形的廉价的方法,研究了四激光束干涉光刻的原理,分析了干涉曝光的结果,并进行了计算机模拟.用现有的光源,如442 nm、365 nm、248 nm、193 nm激光,曝光得到的图形的临界尺寸容易做到180～70 nm.具有实际上无限制的焦深和容易实现的大视场.适合硅基CCDs、平场显示器的场发射电极阵列等光电子器件中大范围内超亚微米级的周期性孔阵或点阵结构图形的制作.     

Research on the optical field distribution and micro-fabrication model in convex-surface laser lithography

A system of convex-surface laser lithography with diode laser is established in this paper. Based on this system, a mathematical model of optical field distribution and lithography on the photoresist layer of convex-surface substrate with diode laser is presented. According to the lithography system and model, some numerical simulations are carried out. The simulation result shows that lithographic lines on convex-surface lithography are not symmetric about the optical axis of incident laser beam. Axis of lines at different vector radius on convex-surface substrate will offset from the wavefront normal of incident laser beam. The offset distance depends on the slopes of different equivalent slants. The simulative results of lithographic model agree well with the lithographic experimental data.     

The three-dimensional photonic crystals coated by gold nanoparticles

We report on the fabrication of metallodielectric photonic crystals by means of interference lithography and subsequent coating by gold nanoparticles. The grating is realized in a SU-8 photoresist using a He-Cd laser of wavelength 442 nm. The use of the wavelength found within the photoresist low absorption band enables fabricating structures that are uniform in depth. Parameters of the photoresist exposure and development for obtaining a porous structure corresponding to an orthorhombic lattice are determined. Coating of photonic crystals by gold nanoparticles is realized by reduction of chloroauric acid by a number of reductants in a water solution. This research shows that the combination of interference lithography and chemical coating by metal is attractive for the fabrication of metallodielectric three-dimensionally periodic microstructures.     

激光光刻中焦深概念的新探讨

焦深大小将直接影响激光光刻加工的最细线宽和线条的边缘倾角从而影响被加工器件性能.传统的几何光学焦深概念对有光刻胶存在时的激光光刻已不适用.本文导出了会聚的高斯光束用于激光光刻时在光刻胶内的光场近似分布形式,由此可判断出光刻胶对光刻线条的分辨率和焦深的影响,从而提出激光光刻时焦深的新概念和估算.     

Photothermally enabled lithography for refractive-index modulation in SU-8 photoresist

We present a new lithographic technique based on a hybrid photothermal process to modulate the refractive index in commercial SU-8 photoresist. Owing to a difference in cross-linking, the refractive index of unexposed SU-8 cross-linked by thermally induced polymerization is 0.0072 higher than that of SU-8 cross-linked by UV exposure and postbaking. Making use of this property, we fabricated two thick, flat-topped index-modulated diffractive optical elements (DOEs) that contain different phase distributions and measured their wavefront reconstruction. The good experimental reconstructions of the index DOEs demonstrate the potential to extend the refractive-index modulation technique for the fabrication of three-dimensional optical elements without needing a development step.     

非晶硅薄膜太阳能电池的紫外激光刻蚀工艺

为提高电池的光电转换效率,通过改善激光刻蚀工艺,采用355 nm紫外纳秒激光分别进行了ZnO:Al薄膜（AZO）刻蚀（P1）、非晶硅薄膜（-Si）刻蚀（P2）和背电极刻蚀（P3）研究。采用万用表测量P1隔离电阻,采用电子扫描显微镜（SEM）和三维激光扫描仪测量刻槽的微结构和三维成像,激光拉曼散射光谱检测非晶硅薄膜刻蚀边缘的晶化。实验结果表明,当刻蚀速度600 mm/s,重复频率40 kHz,功率1.74 W的紫外激光刻蚀ZnO:Al薄膜时,刻槽的隔离效果最佳,达20 M; 紫外激光刻蚀能够有效地减小激光热效应引起的热影响和刻槽边缘的晶化范围,提高非晶硅薄膜电池的性能。     

La2CaB10O19晶体高效紫外激光输出研究

La2CaB10O19(LCB)为可通过Nd∶YAG激光三倍频产生355 nm紫外激光的非线性光学晶体,其光学性能可与商用化的LiB 3O 5(LBO)晶体媲美,但抗潮解特性优势明显。本文对用LCB晶体实现355 nm紫外激光输出的三倍频产生过程进行了优化设计,利用走离补偿方法来提高激光输出转换效率。通过在光路中加入沿θ=45°方向切割、厚度为1.2 mm的方解石晶体走离补偿片,在脉冲宽度为60 ns、重复频率10 kHz的激光参数下实现355 nm输出功率由12 W提升至20 W;在脉冲宽度为25 ps、重复频率为10 Hz的激光参数下355 nm转换效率由28.3%提升至35.2%。     

Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45 nm node

Immersion lithography has been considered as the mainstream technology to extend the feasibility of optical lithography to further technology nodes. Using proper polarized illumination in an immersion lithographic tool is a powerful means to enhance the image quality and process capability for high numerical aperture (NA) imaging. In this paper, the impact of polarized illumination on high NA imaging in ArF immersion lithography for 45 nm dense lines and semi-dense lines is studied by PROLITH simulation. The normalized image log slope (NILS) and exposure defocus (ED) window are simulated under various polarized illumination modes, and the impact of polarized illumination on image quality and process latitude is analyzed.     

Direct removal of SU-8 using focused laser writing

SU-8 photoresist is an important material used in the development of micro-devices [1]. Cross-linked SU-8 structures have been known for their thermal stability and their strong resistance to standard solvent, acid and base. Due to the inert properties of this polymer, it is difficult to further modify or remove SU-8 once it is completely cured. We report an effective process to pattern cured SU-8 photoresist on glass using focused laser beam. Laser fabrication has been an important tool in various fields of research [2]. We made use of this laser cutting method to create interesting and useful two-dimensional SU-8 structures. The shapes and sizes of the structures created can be controlled by varying the power of the laser, angle of incident of the focused laser beam, the relative speed with which the laser beam traverse through the SU-8 film and the magnification of objective lens used. Besides two-dimensional structures, we can also create three-dimensional structures. In this case, we made use of a combination of controlled depth cutting and undercutting where focused laser beam is transmitted through the transparent substrate. Some possible applications of the laser patterned SU-8 film are also demonstrated in this work. PACS 42.62-b; 42.82.Cr; 79.60.Fr; 79.20.Ds; 78.66.-w